Dimitris Kazazis
Laboratory for X-ray Nanoscience and Technologies at Paul Scherrer Institute, Switzerland
Extreme Ultraviolet Interference Lithography Towards High- and Hyper-NA Lithography
Yasin Ekinci, Iacopo Mochi, Dimitrios Kazazis (PSI)
We discuss the progress in EUV lithography and discuss the challenges towards 6 nm half-pitch. We demonstrate using EUV interference lithography that this is feasible and show novel approaches to overcome the limitations of the photoresists.
About Dimitris Kazazis
Dimitris Kazazis received his PhD in 2009 from Brown University working on germanium on insulator classical and tunneling field effect transistors. Subsequently he joined the CNRS Laboratory for Photonics and Nanostructures (LPN) near Paris, France (now part of the Center for Nanoscience and Nanotechnology Paris-Saclay), to work on suspended two-dimensional electron gases in III-V materials and on the quantum Hall effect in graphene for applications in metrology. At the same time, he was a part-time lecturer at Paris 7 University, teaching undergraduate physics. In 2015, he joined the Paris Observatory developing THz detectors for space applications. In 2016, he joined the Paul Scherrer Institute (PSI) in Switzerland, where he is currently a scientist in the Laboratory for X-ray Nanoscience and Technologies (LXN) working on advanced lithography and nanofabrication techniques. He is the author or co-author of more than 45 journal publications.
