Anuja De Silva
Lam Research
Dry Resist Patterning Progress and Readiness Towards High NA EUV Lithography
We aim to demonstrate the progress of dry resist development to address specific challenges of high NA EUV lithography. As features scales, resist thickness and interface between resist and underlayer play a crucial role. The co-optimization of underlayers with dry technology enables tuning of the patterning stack for optimal performance.
About Anuja De Silva
Anuja De Silva is a technical director within dry resist group at Lam Research. Her expertise is in development of new materials and processes for advanced patterning. She is a co-author of ~50 publications and ~75 patents. She is a senior member of SPIE and a member of the IRDS patterning roadmap committee. She is a keen advocate of technical leadership among women in Semiconductor research and a mentor within SPIE’s Women in Optics and Semi org. Previous to joining Lam, Anuja was part of the advanced patterning group at IBM research. She obtained her PhD in Chemistry from Cornell University and BA in Chemistry from Mount Holyoke College.
