Patrick Naulleau
EUV Tech Inc.
At-wavelength Metrology and Characterization Enabling EUVS Scaling
The advancement of extreme ultraviolet (EUV) lithography relies on at-wavelength metrology to understand and control materials for mask and patterning, essential for reducing feature sizes. The presentation will address how phase characteristics in EUV are sensitive to material variations and thin-film interference, complicating the patterning process. Additionally, it explores the significant role of stochastic effects arising during mask manufacturing, which impact the wafer level, emphasizing the need for precise characterization to improve lithographic accuracy.
About Patrick Naulleau
Patrick Naulleau received his B.S. and M.S. degrees in electrical engineering from the Rochester Institute of Technology, Rochester, NY, in 1991 and 1993, respectively. He received his Ph.D. in electrical engineering from the University of Michigan, Ann Arbor in 1997 specializing in optical signal processing and coherence theory. In 1997 Dr. Naulleau joined Berkeley Lab on the EUV LLC program building the world’s first EUV scanner. From June 2005 through March 2008, Dr. Naulleau additionally joined the faculty at the University at Albany, SUNY as Associate Professor, also concentrating in the area of EUV lithography. In April 2010 Dr. Naulleau took the position of Director of the Center for X-ray Optic at Lawrence Berkeley National Laboratory. In August 2022, Dr. Naulleau became CEO of EUV Tech Inc., a leading supplier of EUV metrology equipment. Dr. Naulleau has over 400 publications as well as 20 Patents and is a Fellow of SPIE and Optica.
