Michael Titze
Ion Beam Laboratory, Sandia National Laboratories
Probing Radiation Effects in Gate-All-Around MOSFETs using Focused Particle Beams
The Gate-All-Around (GAA) transistor architecture fundamentally changes the gate and isolation dielectric structures, with unknown impact on radiation performance. Additionally, GAA isolates the active device region from underlying silicon in a way that makes these transistors behave like silicon-on-insulator technology. In this work, we study GAA in surrogate radiation environments.
About Michael Titze
Michael Titze is a Senior Member of the Technical Staff at Ion Beam Laboratory at Sandia National Laboratories. Prior to being a staff member, he held a postdoctoral position in the same department. Before joining Sandia National Laboratories he received a PhD in Physics from Florida International University where he worked on ultrafast optical spectroscopy. He did his undergraduate studies at the Heinrich-Heine Universität Düsseldorf. His current research interests span a wide range of topics from color centers for quantum information science to radiation effects in semiconductors.
