Abstract:
This course will describe the utilization of lithographic materials for semiconductor patterning applications based on EUV, optical and ebeam radiation sources. Photoresist platforms including chemically amplified, chain scission, molecular and inorganic materials will be discussed in relation to their chemistry, design, processing and performance. Similarly, ancillary materials such as topcoats, anti-reflective coatings, surface primers and developer rinses will be addressed in relation to their ability to help maintain image integrity control. Included in the discussion will be the material selection for positive tone vs. negative tone imaging for wafer and mask writing, and the use of alternative patterning technologies such as multiple patterning, DSA and nanoimprint.
Bio:
Dario Goldfarb is a Research Staff Member at the IBM T.J. Watson Research Center located in Yorktown Heights, NY. He received his doctorate degree in the field of Physical Chemistry from the University of Buenos Aires, Argentina in 1999 and held visiting scholar and post-doctoral positions at Oxford University and University of Wisconsin-Madison, WI. He joined IBM in 2000 and is focused on the understanding of the fundamental properties, limits and applicability of lithographic materials and processes for the patterning of future semiconductor technology nodes. He has authored and co-authored over 80 technical publications and holds over 70 patents.