Invited Speaker
Leonidas Ocola
IBM T. J. Watson Research Centerย
Trilayer Process for T-gate and Gamma-gate Lithography Using Ternary Developer and Proximity Effect Correction Superposition
Authors: Leonidas E. Ocola, James Bucchignano, Simon Dawes
This paper discusses an alternate resist stack, a ternary developer, and a different approach to proximity effect correction to mutlilayer resist exposures by using image superposition for the fabrication of T-gates and Gamma-gates.ย
Invited Speakers
Nikolai N. Klimov
Real-time Fast Reconfigurable Grating for Neutron and X-ray Interferometry
View Abstract
Christopher Ober
Evolving Approaches to EUV Photoresists: Polyacetals and Polypeptoids Offer New Options
View Abstract