Invited Speaker

Leonidas Ocola

IBM T. J. Watson Research Center

Trilayer Process for T-gate and Gamma-gate Lithography Using Ternary Developer and Proximity Effect Correction Superposition

Authors: Leonidas E. Ocola, James Bucchignano, Simon Dawes

This paper discusses an alternate resist stack, a ternary developer, and a different approach to proximity effect correction to mutlilayer resist exposures by using image superposition for the fabrication of T-gates and Gamma-gates.

Trilayer Process for T-gate and Gamma-gate Lithography Using Ternary Developer and Proximity Effect Correction Superposition

Session 7C-1: Electron and Ion Beam Lithography
Date: Friday, June 3
Time: 8:00 am
Location: Napoleon A

Invited Speakers

Lars Thorben Neustock

Lars Thorben Neustock Stanford University Shape Optimization of Electrostatic Ion Beam Systems with a 3D Adjoint Boundary Element Method Authors: Lars Thorben Neustock and Lambertus ...

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Chang-Hwan Choi

Nanofabrication via Laser Interference Lithography

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Samuel M. Stavis

Boring Beads or Surprising Standards? A Lateral Nanoflow Assay Reveals Flummoxing Fluorescence

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