Christopher M. Smyth
Sandia National Laboratories
Quasiparticle Band Gap Renormalization in Semiconducting Single-Layer WS2 Induced by Dielectric Screening
We elucidate the impact of varying the external and internal dielectric screening strength on the electronic structure of single-layer WS2. Through sample design and ion beam irradiation, we systematically vary the dielectric screening environment. Increasing screening strength induces significant electronic band gap reduction and enhanced non-radiative recombination.
About Christopher M. Smyth
Christopher M. Smyth is a senior member of technical staff in the Radiation-Solid Interactions group at Sandia National Laboratories. He leverages cross-disciplinary collaborations across academia and industry to study the impact of atomic-scale defects on materials functionality primarily with applications in advanced electronics and nuclear materials. To reveal fundamental structure-property connections of defects, he combines ion beam irradiation with electron microscopy and photoelectron spectroscopy to characterize materials response in-situ in custom TEM, SEM, and XPS beamline end stations. He is currently the PI on projects investigating radiation response in two-dimensional (2D) semiconductors and devices as well as the development of low energy ion beam processes for alloying in 2D materials. Dr. Smyth obtained his PhD in materials science and engineering from the University of Texas at Dallas in 2018. After his PhD, he worked for NASA as a Materials and Processes Engineer developing products for manned spaceflight until 2021, when he joined Sandia as a postdoctoral researcher. He is a member of the Materials Research Society (MRS), American Vacuum Society (AVS), and The Minerals, Metals, and Materials Society (TMS).
