Gijsbert Rispens
Senior System Engineer, ASML NV, Netherlands
Imaging in the Era of High NA EUV Lithography
With the shipment of the EXE:5200B system in 2025, ASML took the next step into the era of High NA EUV lithography. The increase in NA from 0.33 to 055 brings a step in resolution and pattern fidelity to enable further shrink of single expose patterning. In this talk I will introduce the EXE lithography system and roadmap. There will be special attention to the imaging improvements and challenges. I will show how ASML, in collaboration with the lithography ecosystem, works to optimize the imaging performance and takes the next steps into the era of High NA.
Sourabh K. Saha
Assistant Professor and Woodruff Faculty Fellow, George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology
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Steven Randolph
Group Leader for the Nanofabrication Research Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
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George Barbastathis
Ralph E. and Eloise F. Cross Professor in Manufacturing, Professor of Mechanical Engineering, Area Head for Micro and Nanoengineering, MIT
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Julia W.P. Hsu
Texas Instruments Distinguished Chair in Nanoelectronics, Department of Materials Science and Engineering, University of Texas at Dallas
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