Conference

Gijsbert Rispens

Senior System Engineer, ASML NV, Netherlands

Imaging in the Era of High NA EUV Lithography

With the shipment of the EXE:5200B system in 2025, ASML took the next step into the era of High NA EUV lithography. The increase in NA from 0.33 to 055 brings a step in resolution and pattern fidelity to enable further shrink of single expose patterning. In this talk I will introduce the EXE lithography system and roadmap. There will be special attention to the imaging improvements and challenges. I will show how ASML, in collaboration with the lithography ecosystem, works to optimize the imaging performance and takes the next steps into the era of High NA.

Gijsbert Rispens
Steven Randolph

Steven Randolph

Group Leader for the Nanofabrication Research Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
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Mooseok Jang

Mooseok Jang

Department of Bio and Brain Engineering, Korea Advanced Institute of Science and Technology (KAIST), South Korea
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Uros Jagodic

Uroš Jagodič

Research Scientist, Jožef Stefan Institute, Slovenia
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Marta Fernandez-Regulez

Marta Fernandez-Regulez

Researcher in NanoNEMS Group, IMB-CNM-CSIC
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