Conference

In order to meet the demands of next generation lithography for LER and pitch resist designs must continue to innovate. In order to develop new resists there is a need to characterize the chemical changes that occur in resists during EUV exposure and subsequent processing steps. X-ray metrology can offer unique insights into the chemical changes that occur in EUV resists, but can also go further in some cases and provide spatial resolution about where the changes are occurring. In this presentation we will discuss how novel X-ray scattering methods can contribute to resist characterization. This will include low dose x-ray spectroscopy to examine changes in chemistry, resonant soft X-ray reflectivity to depth profile resist/underlayer interactions and high energy X-ray methods to examine local atomic distributions and coordination states in metal oxide resists.