Section | Abstract and Authors |
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Plenary 1 |
4D Electron Microscopy: History, Developments and Applications, Ahmed Zewail is the Linus Pauling Chair professor of chemistry and professor of physics at the California Institute of Technology (Caltech). For ten years, he served as the Director of the National Science Foundation’s Laboratory for Molecular Sciences (LMS), and is currently the Director of the Moore Foundation’s Center for Physical Biology at Caltech. Professor Zewail was awarded the 1999 Nobel Prize in Chemistry for his work using ultrafast optics, showing that it is possible with rapid laser technique to see how atoms in a molecule move during a chemical reaction. More recently, he and his group have developed the field of 4D electron microscopy for the direct visualization of matter’s behavior, from atoms to biological cells, in the four dimensions of space and time. A significant effort is also devoted to giving public lectures on science and on the promotion of education and partnership for world peace, and he continues to serve on national and international boards for academic, cultural, and world affairs. On April 27, 2009, President Barack Obama appointed him to the President’s Council of Advisors on Science and Technology, and in November of the same year, he was named the First United States Science Envoy to the Middle East. |
Plenary 2 |
History and Development of the Helium Ion Microscope, Dr. Economou is president of PointSpectrum, a developer and manufacturer of advanced optical devices for the solar energy, lighting and display industries. He is the former president of Carl Zeiss SMT, Inc., the North American operation of Carl Zeiss SMT AG. He was co-founder of the venture capital funded start-up ALIS Corporation, which developed the helium ion microscope and was acquired by Zeiss in July 2006. Dr. Economou began his professional career as a researcher at Bell Laboratories and MIT Lincoln Laboratory. In 1984, he became involved in his first start-up company, Micrion Corporation, which was the first to develop commercial systems utilizing gallium focused ion beam technology. Over the last 25 years, he has served as a senior executive with several successful technology ventures in the semiconductor and telecommunications industries. He also serves as a director on the boards of a number of private and public technology companies. Dr. Economou received his B.A. in physics from Dartmouth College and his M.A. and Ph.D. in physics from Harvard University. He is a Fellow of the IEEE. |
Plenary 3 |
Moore for Less: Lithography for the 15nm Node and Beyond, Sam Sivakumar is an Intel Fellow and Director of Lithography in Intel’s Portland Technology Development Group in Oregon. He is responsible for the definition and development of Intel’s next generation lithography processes, resolution enhancement techniques and OPC. Sivakumar joined Intel in 1990 after graduating from the University of Illinois at Urbana-Champaign. Throughout his career with the company, he has worked in the lithography area on photoresists, patterning equipment and process development. He has contributed to lithography development, characterization and transfer to high-volume manufacturing of every submicron process technology generation at Intel since 1990. He co-invented industry-leading interconnect patterning techniques for aluminum metallization on the 180 nanometer process, dual-damascene copper metallization on the 130 nanometer and newer processes and various double patterning techniques for advanced technologies. Sivakumar has published 18 papers on semiconductor processing. He holds 30 patents with several more pending. He was born in 1966 in Madras, India. |
1A-1 Directed Self Assembly 1 |
Multi-Layer Block Copolymer Self-Assembled Structures Using Tilted Pillar Templates, We used an array of 35 – 105 nm spaced and 60 deg. tilted pillars, prepared by electron-beam lithography of HSQ. Experiments show that the pillars can control orientation and alignment of a self-assembled cylindrical morphology of PS-b-PDMS with 35 nm of the natural length in a multi-layer. |
1A-2 Directed Self Assembly 1 |
Towards an All-Track Process for DSA,
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1A-3 Directed Self Assembly 1 |
We characterized the pattern transfer properties of polystyrene-block-poly(methyl methacrylate), PS-b-PMMA, after density multiplication on a chemical pattern. Every other PMMA domains required more etching time to be fully removed. This gives insight into the boundary condition optimization for block copolymer directed assembly to improve the pattern transfer properties. |
1A-4 Directed Self Assembly 1 |
Spatial-Frequency Doubling Below the Block Copolymer Period by Templated Self-Assembly, In this study, we demonstrated a high-resolution method for doubling the spatial frequency of lines and dots of structures defined by electron-beam-lithography, as well as a method for achieving a rectangular lattice in the case of dots by using an array of structures defined by EBL to template block copolymers. |
1B-1 Nanoimprint 1 |
The combination of nanoimprint lithography (NIL) for pre-patterning of nanoreliefs on top of a resist, grayscale electron beam lithography (EBL) to generate stepped 3-D structures, and thermal reflow for exclusively transforming these stepped structures into continuous slopes enables mixed micro and nanostructures with sloped and vertical sidewalls in single resists. |
1B-2 Nanoimprint 1 |
We investigate roll diameter amplification method using direct transfer of patterned small mold to large diameter roll mold. The small roll mold was fabricated electron beam lithography. Then large roll mold was lapped with UV-curable film and transferred patterns were used for roll to roll UV nanoimprint lithography. |
1B-3 Nanoimprint 1 |
Digital Planar Holograms Fabricated by Step and Repeat UV Nanoimprint Lithography, We report for the first time the fabrication of digital planar hologram by a novel nanoimprint process. Spectrometer chip have been fabricated and their experimental characterization are in agreement with the theory. |
1B-4 Nanoimprint 1 |
Mapping Resist Flow into Nanoscale Channels During Nanoimprint Lithography, Here we present a complementary technique to address the flow field of a multi-component resist system during NIL process using x-ray and neutron reflectivities for bilayer and homogenous mixture systems. The results provide the flow field during NIL with respect to the viscoelasticity of the resist system. |
1C-1 Emerging Technologies 1 |
Fabrication of Nanopores Using a Helium Ion Microscope, Nanopore fabrication has become an area of intense research due to the many potential applications of nanopores such as DNA sequencing, molecular detection, optical enhancement, etc. In this paper we present a new nanopore fabrication method using a Helium Ion Microscope that eliminates complexities of existing methods, and also present initial functional characterization data. |
1C-2 Emerging Technologies 1 |
3D Fabrication by Stacking Pre-patterned, Rigidly-held Membranes, We describe initial research on a new approach to fabricating 3-D nanostructures based on the aligned stacking of pre-patterned membranes. The approach promises higher yield and greater flexibility than a layer-by-layer application of planar fabrication. |
1C-3 Emerging Technologies 1 |
Fabrication of Nanoparticles Deposited Photonic Crystals, Super lattice Bragg media of both negative and positive refraction index can confine light in collimation or resonance in the near infrared (NIR) spectral region. We present the use of upconversion nanoparticles (NaYF4:Yb3+, Er3+), to enable the visualization of NIR light propagation in PC waveguide with conventional optical microscopy. |
1C-4 Emerging Technologies 1 |
A Novel Low Energy Electron Imaging Technique for DNA Sequencing and Surface Analysis, This paper describes the concept of a novel electron microscope technique capable of imaging a DNA base sequence of unlimited length at low cost with the high accuracy needed for full-scale sequencing, without labeling and radiation damage. |
2A-1 Electron/Ion Lithography 1 |
Cryogenic electron beam-induced-deposition was used to develop 3D structures with incorporated air gaps. Multiple layers of exposed Tungsten and Platinum precursor were investigated by TEM analysis to examine possible layer intermixing. Control of intermixing is critical for future applications, such as in-situ device fabrication. |
2A-2 Electron/Ion Lithography 1 |
Developer-Free Direct Patterning on PMMA by Low Voltage Electron Beam Lithography, We present an emerging method of avoiding liquid development of e-beam patterned PMMA resist. AFM studies of low-keV exposures show that resist height is considerably reduced. The effects of various experimental conditions (voltage, dose, film thickness) and techniques (sample heating, reactive gas flow) are explored. |
2A-3 Electron/Ion Lithography 1 |
We fabricated a 20 nm wide C-shaped nanoaperture for use as a sub-20 nm photoelectron source, using focused helium ion beam milling in a 40 nm evaporated aluminum film. The milled C-aperture has crisp square corners with < 5 nm radii of curvature. |
2A-4 Electron/Ion Lithography 1 |
Electron-Beam Induced Deposition of Transition Metals from Bulk Liquids: Ag, Cr, and Ni, Metallic nanostructures can be deposited using focused electron-beam induced deposition from bulk liquids. Here we report the first deposition of Ag, Cr, and Ni from aqueous solutions containing metal salt precursors. We present the pattern resolution and the elemental compositions for each material. |
2B-1 Nanoimprint 2 |
Mechanical Characteristics Of Nanostructures Fabricated By Nanoimprint, In order to design the devices using imprinted structure, the mechanical data were required. However, it is difficult to measure Young’s modulus of nanostructures by the conventional macroscale method such as a nanoindenter. In this work, we directly evaluated the Young’s modulus of imprinted nanopillars. |
2B-2 Nanoimprint 2 |
Several cycles have been completed in SEMATECH’s nanoimprint lithography defect assessment exercise. Defect types will be explained, and requirements for low defect nanoimprint will be discussed. Plans for continued cycles on features sized down to 22nm, and an assessment of Jet and Flash Imprint Lithography defectivity will be shared. |
2B-3 Nanoimprint 2 |
Experimental Analysis For Process Control In Hybrid Lithography (T-NIL + UV-L), Hybrid lithography combining T-Nil with conventional photolithography requires characterisation of the resits applied far beyond lithjography. Stress measurements were used for glass temperature identification. Imprint with flat stamps was used to characterize the degardation of optical response (exposure + development) by laser interferometry. |
2B-4 Nanoimprint 2 |
Arrays of 25 ×25 nm2 Cross-Point Resistive Switching Devices Fabricated with Nanoimprint Lithography, We present TiO2-based cross point resistive switching devices with junction area of 25 × 25 nm2. The device arrays were fabricated using NIL, and the mold feature size was shrunk using diluted HF. |
2C-1 Nanophotonics 1 |
Fabrication of Multilayer 3D Micron-Scale Metamaterials, We report our recent progress in expanding membrane projection lithography to create optically thick micron-scale 3D metamterials in a layer-by-layer fashion. The individual unit cells contain resonators arranged along each of the coordinate axes. Detailed fabrication steps and optical characterization will be presented. |
2C-2 Nanophotonics 1 |
Plasmonic Light Trapping in Nanostructural Metal Surfaces, In this work, we demonstrate a practical realization of a new method recently proposed theoretically where light is converted into plasmons, which are trapped in nano-grooves on the metal surface. This effect results in tunable complete absorption from UV to the IR and extreme field enhancement at the surface. |
2C-3 Nanophotonics 1 |
Fabrication of Sub-10-Nm-Gapped Gold Structures For Plasmonic Applications, We used a hydrogen silsesquioxane-based lift-off process to fabricate gold structures with sub-10-nm gaps. These fabricated structures were used for surface enhanced Raman scattering. |
2C-4 Nanophotonics 1 |
High Efficiency Plasmonic Color Filters Fabricated Using Imprint Lithography, Thin-film alternatives to color filtering dyes are being investigated. Certain applications require simultaneous polarization of the outgoing light or sharper spectral widths. We propose a robust hybrid plasmonic waveguide structure that can be tailored to meet these desired functions and fabricated over large areas using imprint lithography. |
3A-1 DSA 2 |
In this talk we will provide an overview of block copolymer DSA, describe examples of how it may be incorporated in device fabrication, summarize recent progress in its practical implementation, and describe examples of future opportunities for its use. |
3A-2 DSA 2 |
High Throughput Sub-10-nm Fabrication Based on Templated Self-Assembly of Block Copolymer, We achieved high throughput sub-10-nm fabrication using templated self-assembly of block copolymer. With topographical templates and 16kg/mol PS-PDMS, long-range ordered 9-nm half-pitch lines were fabricated and their orientation angles were controlled by lattice parameters of templates. In this approach, the throughput was increased by 70-fold compared with electron beam lithography. |
3A-3 DSA 2 |
DNA Assembly on Patterned Surfaces, We explore various techniques which combine nanolithographic patterning with DNA-based assembly in an effort toward controlling the placement and integration of functional nanostructures. |
3A-4 DSA 2 |
We report directed self-assembly with density multiplication of strongly segregating polyhedral oligomeric silsesquioxan containing diblock copolymer employing controlled solvent annealing. Hexagonally closed packed pattern with >3Tdot/inch2 was demonstrated with improved fidelity by applying a solvent neutral to both of the blocks, and optimizing degree of swelling in solvent annealing process. |
3A-5 DSA 2 |
Process Simulation of Block Copolymer Nanofabrication, Block copolymer lithography (BCL) has been recently attracting considerable attention as a potential candidate for sub-20 or 10-nm lithography. Understanding of the mechanism of BCL and the modeling of BCL in mesoscale and molecular scale are useful for the predicting of self-assembled structures. The simulation results in the self-assembly of block copolymer will be presented in the conference. |
3B-1 Electron and Ion Sources and Systems 1 |
We have developed new reliable and durable new cold cathodes based on rare-earth monosulfides with turn out to have an effective work function as low as 1 eV. The physical reasons for these highly desirable properties are explained using a patchwork field emission model of the emitting surface. |
3B-2 Electron and Ion Sources and Systems 1 |
Electron Beams with Helical Wavefronts and Quantized Angular Momentum, We generated free electron vortex beams using nanofabricated diffraction holograms in a TEM. The beams are composed of free electrons with helical wavefunctions that carry quantized orbital angular momentum. We demonstrated beams with free electron orbital states with up to 100 quanta of angular momentum about the beam axis. |
3B-3 Electron and Ion Sources and Systems 1 |
The Influence of Gun Design on Coulomb-Interactions in a Field Emission Gun, We have shown that gun design should be taken into consideration for achieving the highest possible brightness electron sources. |
3B-4 Electron and Ion Sources and Systems 1 |
Individual Beam Control for MEMS Multi Electron Beam Systems, We will present a prototype multi electron beam quadruple deflector system. Our fabrication process is bipolar compatible allowing local electronics to be incorporated, for example sample and hold functionality. We will present the fabrication process, fabrication results and electron optical deflection measurements thatare ongoing. |
3B-5 Electron and Ion Sources and Systems 1 |
We demonstrate thermionic electron emission from a forest of vertically aligned carbon nanotubes, induced by heating the nanotubes using low-power, hand-held, battery-operated lasers with wavelengths in a broad visible/infra-red range. This nanotube forest cathode could have numerous applications ranging from vacuum electronics to solar energy conversion. |
3C-1 Nanostructures/Devices 1 |
(Invited) Large-Area Negative Index Metamaterials and Plasmonic Devices by Printing and Molding,
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3C-2 Nanostructures/Devices 1 |
High Growth Efficiencies in Helium Ion Beam Induced Deposition at Short Beam Dwell Times, PtC nanopillars were grown with helium ion beam induced deposition at various beam currents, beam dwell times, and gas refreshment times. The deposition efficiency at short dwell times and sufficiently long refreshment times can be as high as 0.3 nm3 per ion. Simulations aid the interpretation of the experimental data. |
3C-3 Nanostructures/Devices 1 |
A New High-Aspect-Ratio Diamond Dry-Etch Process for Hard X-Ray FEL Radiation Zone Plates, We report on a new tungsten-hardmask-based diamond dry-etch process suited for making very high-aspect-ratio diamond nanostructures. The process is developed for making diamond zone plates that can be used with the new and upcoming x-ray free electron laser sources. |
3C-4 Nanostructures/Devices 1 |
A process for the removal of FIB-inflicted Gallium contamination and amorphized material is presented. This process leverages focused electron beam induced etching. New insights into the physics of FIB-damage progress on a silicon substrate with time is shown. |
3C-5 Nanostructures/Devices 1 |
Improving PMMA Etch Resistance using Sequential Infiltration Synthesis, We improve the etch resistance of patterned poly(methyl methacrylate) (PMMA) by reacting it directly with precursors for atomic layer deposition. The resulting material shows substantial etch resistance to HBr plasma etching, having an etch rate one-tenth of single-crystal silicon, with no change in line edge roughness or pattern dimensions. |
4A-1 DSA 3 / Advanced Lithography |
(Invited) Computational Lithography: Exhausting Optical System Limits Through Intensive Optimization, Computational Lithography is enabling the extension of optical lithography. The status of computational lithography will be reviewed, and the motivation for using intensive optimization techniques in optical lithography will be explained. The intensive optimization technique called Source-Mask-Optimization will be discussed and the benefits and challenges demonstrated. |
4A-2 DSA 3 / Advanced Lithography |
Graphoepitaxy of Block Copolymers Using 193nm Lithography: A Process and Defectivity Study, In this paper the work is focused on the direct assembly flow of PS-PMMA block copolymer in association with conventional 193nm lithography. More precisely, in order to follow process robustness, a new methodology to qualify and quantify defects has been elaborated. |
4A-3 DSA 3 / Advanced Lithography |
Direct Top-Down Ordering of Diblock Copolymers Through Nanoimprint Lithography, Thermal nanoimprint lithography is used to imprint a PS-b-PMMA copolymer layer. It is shown that the copolymer can self-organize during the imprinting step and that this organization is guided by the mold's features. Similar results are also obtained after a short imprinting step followed by thermal annealing. |
4A-4 DSA 3 / Advanced Lithography |
Nanoimprint Induced Block Copolymer Self-Assembly, We performed directed self-assembly of block copolymers (BCP) via nanoimprint technique. Eventually we succeed to transfer sub-10 nm BCP patterns onto the underlying substrates using plasma etch. |
4A-5 DSA 3 / Advanced Lithography |
Evolution of Critical Dimension and Line Edge Roughness During Block-Copolymer Nano-Patterning, We discuss a lithographic approach that couples ArF immersion lithography, directed block-copolymer assembly, and nano-imprint lithographic techniques. To determine the basic feasibility of this approach for IC mass production, we characterize the evolution of critical dimension, line edge roughness, and defect density between processing steps. |
4B-1 Extreme UV Lithography |
(Invited) Challenges and Progress in Extreme Ultraviolet Mask Development,
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4B-2 Extreme UV Lithography |
Impact of EUV Lithography Line Edge Roughness on 16 nm Memory Generation, LER is the main effects of process uncertainties in EUV-lithography. In this paper, the impact of smoothing processes is reported: line profiles were injected in an electrical simulator: low-frequency roughness highly impacts memory performance. Combining resist roughness and electrical assessment, we so quantify the contribution of smoothing processes on electrical performance. |
4B-3 Extreme UV Lithography |
EUV Mask Repair Using a Combination of Focused-Electron-Beam-Induced Processing and Vacuum AFM, The current technology for mask repair involves gas-assisted processing with focused electron beams. Extending this technology from 193 nm lithography to EUV masks requires being able to locate and visualize 3D defects invisible in the SEM. Therefore, a AFM system was successfully integrated into the vacuum chamber next to the electron column. |
4B-4 Extreme UV Lithography |
Actinic Characterization of EUV Bump-Type Phase Defects, Aerial image measurements from programmed, bump-type phase defects, using the SEMATECH Berkeley Actinic Inspection Tool (AIT). Measurements were performed through-focus. Defects were observable down to 1.0-nm height, and 43-nm FWHM, where they begin to disappear into the multilayer phase roughness. We compare measurements with simulations made using top surface sizes. |
4B-5 Extreme UV Lithography |
Table Top Nanopatterning by De-Magnified Talbot Effect, We describe the extension of the coherent imaging by Talbot effect as an alternative to nanofabrication of periodic arrays of a unit cell containing arbitrary design. Illuminating the periodic transmission mask with a convergent coherent extreme ultraviolet (EUV) beam, we demonstrated the possibility to print de-magnified replicas of the mask. |
4C-1 MEMS / NEMS |
(Invited) ElectroMechanical Resonators based on Nanotube and Graphene, Carbon nanotubes and graphene offer unique scientific and technological opportunities as nanoelectromechanical systems (NEMS). In this talk, I will review some of our group's recent results on nanotube and graphene NEMSs, including the control of the mechanical oscillation using individual electrons tunneling onto and out of the nanotube. |
4C-2 MEMS / NEMS |
Fabricating Arrays of Graphene Mechanical Resonators with High, Size-Dependent Quality Factors, Graphene’s strength, stiffness, and density make it an ideal material for nanoelectromechanical systems, but graphene resonators have been challenging to fabricate and have exhibited poor quality factor. We overcome both of these obstacles using CVD-grown graphene to produce large arrays of graphene resonators with high quality factor. |
4C-3 MEMS / NEMS |
Tuning Graphene Nanomechanical Resonators, We demonstrate 500% tunability in frequency and 20X increase in quality factor for graphene-based nanomechanical resonators, achieved through chemical modification of the graphene film, that can be used as a general approach for preparing high-strength, ultra-thin films with tunable mechanical properties for NEMS applications. |
4C-4 MEMS / NEMS |
Micromachined Video Rate AFM Silicon Cantilever, The slowing factor of AFM imaging is the scan speed – whereby the time for one image can rise up to few minutes. We developed micromachining process by decreasing the physical dimensions down to nanometer scale - the cantilevers weight reaches attogramm with resonance frequency ranging from 20- up to 150 MHz. |
4C-5 MEMS / NEMS |
Carbon Nanomechanical Resonator Fabrication from PMMA by FIB/EB Dual-Beam Lithography, The 3-D nanostructure fabrication by FIB/EB dual-beam lithography and ion-beam modification technique was researched to achieve the arbitrary carbon nanoresonator. As a result, carbon resonator made from PMMA had useful vibration characteristics as the nanomechanical structure. Carbon nanoresonator fabrication from PMMA and their mechanical characteristics will be reported in detail. |
5A-1 Electron/Ion Lithography 2 |
(Invited) Sub-10-nm Beam-Based Lithography and Applications, Presentation of latest results regarding beam-based lithography of sub-10-nm structures across energy scales and charged-particle species. Discussion of methods of exposure, development, and metrology at this length scale. Finally, presentation applications of lithography at this length scale to guiding self assembly and device fabrication. |
5A-2 Electron/Ion Lithography 2 |
Direct-Write Lithography of Sub-10nm Features on Metallorganic Resists Using a Helium Ion Microscope, We evaluate two metallorganic resists to directly pattern metal nanostructures using the Helium Ion Microscope. The small probe size of the helium ion beam enables fabrication of high aspect ratio structures with sub-10nm features. Reduction methods to enhance metal content and characterization of patterned features using Rutherford backscattered spectroscopy is in progress. |
5A-3 Electron/Ion Lithography 2 |
We present a novel mask- and resitstless two step process to locally generate pure iron nanostructures on different oxide substrates. First, the surface is locally activated by a focused electron beam. Second the activated structures are exposed to Fe(CO)5, which decomposes and autocatalytically grows to pure Fe deposits. |
5A-4 Electron/Ion Lithography 2 |
Resolution Limits of 200 keV Electron-Beam Lithography Using Aberration-Corrected STEM, We studied the resolution limits of electron-beam lithography by suppressing the spot size and electron scattering. For this, we used an aberration-corrected scanning transmission electron microscope to exposure 20-nm-thick hydrogen silsesquioxane at 200 keV. Preliminary results show feature size down to 3 nm and a relatively concentrated point-spread function. |
5A-5 Electron/Ion Lithography 2 |
Using Electron-Beam-Induced Deposition we deposited and imaged 3.5 nm half-pitch dense patterns on bulk Si in an SEM. This required synchronization of the writing sequence with the 50Hz line frequency, as well as a careful choice of the dwell time per pixel, number of passes, and waiting time between passes. |
5B-1 Nanoimprint 3 |
I introduce our recent results on release property of fluorinated silica surfaces for UV-curable resins evaluated by fluorescence microscopy and mechanical measurement. |
5B-2 Nanoimprint 3 |
A Molecule Trapping and SERS Sensing Device by 3-D Nanoimprint, We demonstrated a molecule trapping and sensing device based on the nano-pillar array. The pillar tips were closed under the capillary force to trap molecules in the gaps between tips, where have the best enhancement factor. |
5B-3 Nanoimprint 3 |
We demonstrate a new nanopatterning technique by adopting UV-curable liquid resist materials to the Dynamic NanoInscribing (DNI) process where liquid resist lines are smoothly delineated and promptly UV-cured as the grating mold moves over, enabling continuous formation of high aspect-ratio nanogratings free from elastic recovery that inevitably happens in solids. |
5B-4 Nanoimprint 3 |
The Effects of Thin Films and Confinement on Thermal Nanoimprint Lithography Patterning, We provide evidence for an enhanced resistance to polymer flow during the nanoimprint lithography patterning of thin polymer films. When the thickness of the initial resist film decreases, one must increase the imprint temperature to achieve mold fill. We relate this directly to reduced molecular mobility with inelastic neutron scattering. |
5B-5 Nanoimprint 3 |
Liquid Transfer Imprint Lithography: A New Route to Residual Layer Thickness Control, Control of the residual layer thickness is of utmost importance for nanoimprint technology. We will present a technology on non flat substrates which separates parameters that have been regarded as conflicting up to now. Both complete and defect free stamp filling as well as minimum layer thickness can be achieved. |
5C-1 Nanophotonics 2 |
Nanofabrication technologies enable the patterning of materials on the scale of the wavelength of light, opening up new vistas in the photonic designer’s toolkit. We will present our recent research on the design of photonic materials for thin-film photovoltaics and reconfigurable photonic integrated circuits. |
5C-2 Nanophotonics 2 |
We present a new SERS architecture, consisting a 3D cavity nanoantenna array coupled with dense plasmonic nanodots through nano-gaps, that has achieved high area-average SERS enhancements over 1.7x109 and a good uniformity (deviation < 22.4%) over an entire 4” wafer. The architecture and fabrication method can be extended to other plasmonic systems. |
5C-3 Nanophotonics 2 |
Direct Patterning of Sub-10 nm Optical Apertures with a Helium Ion Microscope, We employ a Helium Ion Microscope to demonstrate direct patterning of sub-10nm features (free of implanted metal impurities) through optically thick metallic films. Our demonstration explores fractal apertures, which feature higher order structures requiring critical dimensions of ~10 nm and structures with dimensions appropriate for ultraviolet resonance. Limitations will be discussed. |
5C-4 Nanophotonics 2 |
Our work present a novel and effective method of patterning subwavelength patterns on LED sapphire substrates, and demonstrated that the nanostructures can not only significantly enhance the light extraction than the flat or micron-sized patterns, but also can improve the GaN crystal quality grown. |
5C-5 Nanophotonics 2 |
We show the imaging and analysis of plasmon modes on various gold nanostructure configurations. The nanostructures were fabricated using electron beam lithography on a TEM membrane combined with electron-beam sculpting. Plasmon resonances and images were obtained using electron energy-loss spectroscopy (EELS) in a TEM setup. |
6A-1 DSA 4 / Patterned Media |
Extensive Tunability of Self-Assembled Block Copolymer Patterns for Nanolithography, One of the major technical challenges for block copolymer self-assembly is limited tunability in pattern geometry and dimension. We suggest methods for extending the degree of tunability by choosing highly incompatible polymer blocks and utilizing solvent vapor treatment techniques. We also introduce a new templating technique based on metal films deposited on block copolymer films. |
6A-2 DSA 4 / Patterned Media |
Directly–assembly via nanolithography and pulsed laser heating was used to assemble nanoparticle chains with precise size and spacing. Specifically, liquid–phase, pulsed laser induced dewetting (PLiD) was used to convert metallic thin film strips into nanoparticle chains exhibiting an unnaturally low deviation in particle size and spacing. |
6A-3 DSA 4 / Patterned Media |
Fabrication and Recording Performance of Bit Patterned Media, Bit Patterned Media with integrated data and servo patterns are fabricated by e-beam lithography and etching at bit densities of 500 Gb/in2 to 950 Gb/in2. The patterns enable recording performance to be evaluated using conventional read/write heads. At 720 Gb/in2, on track error rates of ~ 5X10-3 are shown. |
6A-4 DSA 4 / Patterned Media |
We demonstrate thermally-assisted magnetic recording on bit patterned magnetic multilayer media at 1.5 Terabits per square inch. After e-beam exposing the HSQ resist, a combination of reactive ion etching and ion milling was used to transfer the patterns into the media. |
6A-5 DSA 4 / Patterned Media |
Nanoimprint lithography is proved as a high-throughput and low-cost method to create high-quality prepatterns for directed self-assembly of addressable 1-D or 2-D PS-b-PDMS nanoarrays over large area. Pattern transfer from PS-b-PDMS nanotemplates with a pattern density of 1.3 teradot/in2 was successfully demonstrated, into various functional materials, like carbon, silicon, quartz, and magnetic materials. |
6B-1 Novel Optical Lithography< |
Breaking the Diffraction Barrier in Nanopatterning with Optical Saturable Transformations, Here we demonstrate a far-field nanopatterning technique that uses photochemical transitions to break the diffraction barrier using only low light intensities, opening the door to massive parallelization. We call this method Patterning via Optical Saturable Transformations (POST). |
6B-2 Novel Optical Lithography< |
Subwavelength Optical Lithography of Complex Nanopatterns by Diffraction, By carefully controlling the separation between the mask and wafer, we were able to utilize the high orders of light diffraction patterns, to create both 2D and 3D nanostructures of deep sub-wavelength dimensions on the wafer. We further show that this technique may be used to map the intensity of light. |
6B-3 Novel Optical Lithography< |
Near-Field 3D Lithography Using Self-Assembled Nanospheres, We propose a maskless near-field phase lithography process. Instead of using a physical mask, colloidal lenses are assembled directly on the substrate to provide the phase modulation required to generate the near-field intensity distribution. The proposed method uses a simple 2D self-assembled geometry to pattern more complex 3D structures. |
6B-4 Novel Optical Lithography< |
Demonstration of Full 4-inch Patterning with Displacement Talbot Lithography, A growing number of photonic applications require patterning of large areas with periodic structures. Displacement Talbot Lithography (DTL) will be introduced as a new method for meeting these needs. DTL is based on the Talbot effect but free of its depth of field limitation. Here we demonstrate the successful patterning of 4" wafers in a single exposure step with DTL. |
6B-5 Novel Optical Lithography< |
A Comparative Study on Absorbance-Modulated Interference Lithography, Absorbance-modulated interference lithography (AMIL) is an optical patterning technique where photochromic molecules are placed between the optics and photoresist. These molecules can be made transparent or opaque by illuminating with wavelengths lambda1 or lambda2, respectively. In this paper we compare four basic forms of AMIL utilizing numerical and experimental results. |
6C-1 Emerging Technologies 2 |
Sub-millisecond Post-Exposure and Hard Bake of Chemically Amplified Photoresists, We use a scanned CW laser source to shift the time/temperature regime of the PEB process from tens of seconds at 90-130C (hot-plate PEB) to sub-millisecond times at temperatures of 250-450C to reduce LWR by ~20%. Kinetic rates for resist deprotection and acid diffusion are investigated to understand this behavior. |
6C-2 Emerging Technologies 2 |
3D Nanostructures by Stacking Pre-Patterned, Fluid-Supported Single-Crystal Si Membranes, We describe initial research on a new approach to fabricating 3D nanostructures based on the aligned stacking of pre-patterned membranes. The approach promises higher yield and greater flexibility than a layer-by-layer application of planar fabrication. |
6C-3 Emerging Technologies 2 |
Templated Photo-Ablation of Graphene, Free-standing graphene is patterned using photo-induced bond breaking in open regions of a template absorber. |
6C-4 Emerging Technologies 2 |
Multiscale Hydrogen Depassivation Lithography Using a Scanning Tunneling Microscope, Working on hydrogen passivated silicon, we create lithographic patterns using an STM tip for localized electro-stimulated desorption of hydrogen. By combining high yield/large spot sizes with lower yield/extremely small spot sizes, we fabricate quarter square micron structures with two nanometer line edge roughness in just a few minutes. |
6C-5 Emerging Technologies 2 |
Thermo-Mechanical Probe Lithography at 500 kHz Pixel Rate, In thermo-mechanical scanning probe lithography the resist is removed locally and directly without further development steps. We report the acceleration of our probe-based lithography process to 500 kHz pixel rate. Imaging can be done in-situ at similar rates, hence we demonstrate a lithographic process with an unprecedented turnaround time of the order of minutes. |
7A-1 Resists/Process Modeling |
(Invited) Challenges for Patterning Process Simulation Models Applied to Large Scale, A review of the progress and remaining challenges for the development of fast and accurate models for patterning processes used in semiconductor manufacturing. |
7A-2 Resists/Process Modeling |
Hydrogen Silsequioxane ( HSQ) is finding increasing use as a negative tone electron beam sensitive resist capable of defining sub 10 nm features. In this paper we use an accurate linewidth inspection technique to compare the results from a range of high resolution HSQ processing methods reported in the literature. |
7A-3 Resists/Process Modeling |
Improved Time Dependent Performance of HSQ Resist Using a Spin on Top Coat, It is known that the time delay between spinning and e-beam exposure has an effect on the sensitivity and contrast of HSQ. We report a significantly improved time dependent performance of HSQ by using a water-soluble, spin on top coat developed by Showa Denko. |
7A-4 Resists/Process Modeling |
Correlated Surface Roughening During Photoresist Development, Dynamical scaling concepts are applied to simulation of open-frame photoresist dissolution. Correlations in the underlying noise only partially influence final surface height correlations, depending on the mean development rate and the steepness of the development rate gradient at the final resist edge. |
7A-5 Resists/Process Modeling |
A new electron beam resist called SML2000 has been investigated at 100KeV. The nanostructures produced had a trench line width and height was >30 and 2131nm resulting with an aspect ratio of ~75:1. This is significant, as this result cannot be achieved with any other industry standard electron beam resists. |
7B-1 Biomedical Diagnostics |
A discussion of several approaches to medical diagnostics, each enabled by micro- or nano-fabrication. |
7B-2 Biomedical Diagnostics |
Nanofluidic Single DNA Sorter and Analyzer Fabricated by Nanoimprint and Wafer Bonding, We present a method to fabricate perfectly sealed nanofluidic device for DNA sorting and analysis using air cushion based nanoimprint lithography and a room-temperature wafer bonding based on sodium silicate, and the results of successful DNA flow in a single 55 nm wide nano-fluidic channel. |
7B-3 Biomedical Diagnostics |
DNA Concentrating by Electro-Kinetic Forces in Nano-bridge FET Array for DNA Hybridization Detection, Electrical biosensors are a class of biosensors that show promise for disease discovery due to real time, low cost, ease of miniaturization and label-free operation. We have introduced Nano-bridge biosensor as an improved structure with leads to higher Signal to Noise Ratio that has significant improvement in signal to noise ratio, active exposed surface, and lower target bio-species detection. |
7B-4 Biomedical Diagnostics |
DNA Arrays with Site-Specific Labels, We explore ways of binding functional nano-objects to specific sequences on double stranded DNA via three techniques: Strand invasion by PNA (peptide nucleic acid) strand invasion or LNA (locked nucleic acid)and nick translation. |
7B-5 Biomedical Diagnostics |
The Mechanism of Nano-Sculpturing by Focused Electron Beam for DNA Translocation Control, The fabrication of sub-10 nm solid state nanopore by a focused e-beam in a TEM now becomes a common practice. However, it is still not yet clear how the membrane structure is perforated by the focused e-beam. The mechanism is well predicted by the scattering between electron and atom. |
7C-1 Nanostructures/Devices 2 |
(Invited) Self Perfection of Nanostructures – A New Frontier in Nanofabrication, We have developed a nanostructure self perfection technology, “self-perfection by liquefaction” (SPEL), which transitly melts nanostructures while applying certain boundary conditions to reshape them. Results will be presented for both soft and hard materials showing how SPEL can be effective at reducing imperfections and/or changing feature sizes/shapes in contollable ways. |
7C-2 Nanostructures/Devices 2 |
Drawing with Nanostencils on Flexible Substrates, Nanostencils are used in dynamic mode to pattern on top of flexible substrates. As the stencil is moving during the material evaporation, the obtained structures are the convolution between the stencil trajectory and the apertures’ geometry. Variable-thickness and arbitrary shapes are obtained at 100 mm wafer scale. |
7C-3 Nanostructures/Devices 2 |
Structural Influence of 3D Pyrolyzed Carbon Electrodes on Electrochemical Behavior, We report our recent progress in fabrication of interferometric lithography defined 3D porous carbon electrodes for fuel cell and battery applications. The 3D porous carbon electrodes are comparable to standard glassy carbon electrodes, but demonstrate several behaviors which are unique to their sub-micron 3D nature, offering potential application benefits. |
7C-4 Nanostructures/Devices 2 |
Study of Spin-coated Resist Coverage on Nanoscale Topography Using Spectroscopic Ellipsometry, We have applied spectroscopic ellipsometry to the characterization of spin-coated resist on high-density line-and-space patterns used in discreet track recording. From the measured spectra, critical coverage information can be extracted using rigorous coupled wave analysis. |
7C-5 Nanostructures/Devices 2 |
A New Process for Electron Beam Induced Deposition of Cobalt with Excellent Properties, A new catalytically enhanced EBID process was discovered for Co deposition from Co2(CO)8 by using a carbon seed layer. Between 55°C and 70°C of the substrate temperature growth of the patterned Co structures on C seed is enhanced (~10-2 μm3/nC yield), while the purity is close to 100 at%. |
8A-1 Electron/Ion Lithography 3 |
(Invited) Electromagnetic Radiation Pressure on Left- and Right-handed Dissipative Media, We investigate the radiation pressure exerted by plane waves on flat slabs of dissipative left-handed or right-handed metamaterials. A fully-absorbing left-handed metamaterial can experience a pull when illuminated at normal incidence. Radiation-induced pull is further confirmed by observation of levitation of free-standing slabs of the metamaterial. |
8A-2 Electron/Ion Lithography 3 |
In this contribution we present the use of grayscale electron-beam lithography combined with a molecular weight selective thermal reflow for the generation of novel 3-D resist profiles, with smooth slopes as well as stepped resist contours on the same substrate and in very close vicinity to each other. |
8A-3 Electron/Ion Lithography 3 |
Nanostructure density multiplication in PMMA is reported using 1keV EBL exposure and cold development. The density multiplication is achieved by PMMA performing as a positive and negative tone resist in a single EBL process step. Strong potential of pattern quality and size control, and in-silico process design is demonstrated. |
8A-4 Electron/Ion Lithography 3 |
We measured directly the surface potential of an insulator film on a conductive substrate by Kelvin-probe-force microscopy, which was irradiated by EB in a specimen chamber of an ordinary scanning electron microscope, and analyzed by numerical calculations, incorporating a Monte Carlo simulation of electron trajectories and electron beam induced conduction. |
8A-5 Electron/Ion Lithography 3 |
3D Nanostructuring of Hydrogen Silsesquioxane Resist by 100 keV Electron Beam Lithography, We investigate the 3D nanostructring of hydrogen silsesquioxane (HSQ) resist by two-step 100 keV electron beam lithography. Two consecutive exposures were used to fabricate two-level high aspect ratio structures with lateral dimensions below 50 nm in resist thicknesses of 700—900 nm. |
8B-1 Nanobiology/Microfluidics |
(Invited) Optical Sensors for Spatially-Resolved Measurement of Oxygen in Microfluidic Devices, Lab-on-a-chip (LOC) devices provide excellent oxygen control. To facilitate the measurement of oxygen in LOCs we have developed a process for the integration of polymer-encapsulated optical oxygen sensors. In this paper we introduce the fabrication process, discuss patterning result and demonstrate the use of these sensors for spatially-resolved oxygen measurement. |
8B-2 Nanobiology/Microfluidics |
Simultaneous Positioning and Orienting of a Single Nano-object Using Flow Control, We describe a newly-developed technique for simultaneously controlling both the position and orientation of a single nano-object in a fluid by creating and precisely manipulating the flow around the object. |
8B-3 Nanobiology/Microfluidics |
Micro and Nano Pillar Assay for T cell Activation, Mechanical interaction of cells and their immediate environment is one of the basic cellular signaling pathways. Physical forces exerted on a cell are translated into biochemical signals to influence cell behavior. We demonstrate a well plate with submicron pillars to assay effects of pillar geometry on T cell activation. |
8B-4 Nanobiology/Microfluidics |
A New Approach for Measuring Protrusive Forces in Cells, We describe a device for measuring cellular protrusive forces. The elastomeric device combines a large area pad for stimulating cell spreading with micron-scale pillars extending beyond the device surface. Measurement of the pillar deflection by a spreading cell yields quantitative information regarding the cellular protrusive force. |
8B-5 Nanobiology/Microfluidics |
Cell Electroporation – A Diffusion Process or a Drive-In Process?, We employ an optical tweezer to facilitate the control of cell position at micro/nano-channels instead of using a pressure difference and apply the electric field across the cell for localized drug/gene delivery. We focus on the mechanism of electroporation of cells at nature state in devices with different scales. |
8C-1 Nanoelectronics 1 |
(Invited) Spin-based Quantum Information Processing in Silicon, We review electron spin qubits in silicon based on both dopant atoms and gate-defined quantum dots. Single-shot readout of an electron spin in Si was demonstrated with readout fidelity > 90% and spin lifetime T1 ~ 6 s. Valley splitting and spin filling in Si MOS quantum dots is also discussed. |
8C-2 Nanoelectronics 1 |
Time-Lapse Imaging of Thermally-Driven Signal Propagation in Nanomagnetic Logic, We directly imaged the thermal random walk dynamics of a digital signal in nanomagnetic logic using a novel time-lapse imaging technique. Nanoscale magnetic contrast imaging was obtained by x-ray photoelectron emission microscopy (X-PEEM). |
8C-3 Nanoelectronics 1 |
Vertical Transistors with High Alignment Tolerance, We present a vertical transistor architecture that has both high alignment tolerance as well as submicron channel lengths and is further compatible with flexible supports. This condition is accomplished by constructing vertical devices that are conformally coated and combined with a beam (line-of-sight) deposition process such as sputtering or evaporation. |
8C-4 Nanoelectronics 1 |
Local, Direct-Write, Damage-Free Thinning of Germanium Nanowires, A process for locally thinning germanium nanowires is presented. The presented process enables a highly-controllable, damage-free diret-wrtie technique to reduce the diameter of the Ge-NW to almost any desired size. |
8C-5 Nanoelectronics 1 |
Nanofabrication Down to 10 nm on a Plastic Substrate, In this work, we have shown the feasibility of nanofabrication down to 10 nm using e-beam lithography. High throughput nanoimprint with high resolution (20-50 nm) will also be demonstrated on plastic substrates. This paves the way for fundamental studies and large-scale manufacturing of nanoelectronics with advanced performance on plastic subst. rates. |
9A-1 Electron and Ion Sources and Systems 2 |
(Invited) MOTIS: Focused Ion Beams from Laser-Cooled Atoms, We present Li+ and Cr+ focused ion beam systems based on the magneto-optical trap ion source (MOTIS). Ions created by photoionization of laser cooled neutral atoms are coupled into a conventional focused ion beam column. High resolution images at low beam energy will be presented. |
9A-2 Electron and Ion Sources and Systems 2 |
5kV Multi Electron Beam Lithography MAPPER Tool: From 32nm to 22nm Resolution Capability, A 300mm pre-alpha platform (110 beams, 5keV) from MAPPER lithography was installed into LETI mid 2009. This study will present a review of the tool status including 32nm capability. A study of the exposure parameters’ impact has been carried out to optimize the lithography performance. 27nm structures have been fabricated. |
9A-3 Electron and Ion Sources and Systems 2 |
Carbon Nanotube Field Emission Electron Gun Microassembly for Maskless Lithography, We report the development of a carbon nanotube field emission electron gun microassembly and its integration into a micro-column array for maskless e-beam lithography. A new nanotube cathode design produces less field screening and lower operating voltages, which is critical for alleviating high fields and for device miniaturization. |
9A-4 Electron and Ion Sources and Systems 2 |
Towards a 100 wph e-Beam Direct Write Cluster, In the past years MAPPER has been developing its maskless lithography system. This has resulted in two prototypes. In parallel developments have been ongoing on the main subsystems of the machine: Electron optics, data path and wafer stage. In this presentation we will present development highlights of these three subsystems. |
9A-5 Electron and Ion Sources and Systems 2 |
Scanning-Neon-Ion-Beam Lithography, A helium-ion microscope modified for operation with neon gas may enable a lithography process with higher resolution than any scanning-particle system to date. We exposed test structures in hydrogen silsesquioxane resist on bulk silicon, measuring both the critical dose-to-print and the lithographic point-spread function. |
9B-1 Photonic Imaging/Systems |
(Invited) Coherent Diffraction Imaging, In this talk, I will present the principle of coherent diffraction imaging and illustrate its broad application in materials/nano-science and biology. |
9B-2 Photonic Imaging/Systems |
E-Beam Writing Strategies for Low-loss Optical Waveguides, E-beam lithography parameters such as writing grid, and write strategies including over-writing and field shift writing are evaluated for improvement of low-loss waveguides, showing significant improvement in transmission loss. With automated testing, data from thousands of waveguides shows effects with high statistical confidence. |
9B-3 Photonic Imaging/Systems |
In this work, we use the recently-demonstrated non-perturbative all-optical probing technique of two-photon photoluminescence-based photon localization microscopy as well as electromagnetic simulations to reveal how small structural variations often significantly impact plasmonic properties, particularly for devices with ~ zeptoliter mode volumes. |
9B-4 Photonic Imaging/Systems |
Design and Fabrication of Broadband Diffractive Optics, In this presentation, we will describe the design, fabrication and characterization of multi-level diffractive optics that is optimized to operate efficiently over a broad spectrum. |
9B-5 Photonic Imaging/Systems |
We present a new approach for patterning large-area periodic bar-shaped nanoimprint molds with high aspect-ratio (length/width as large as 7), and demonstrate a nanoimprint-based simple method for fabricating a new plasmonic nanoantenna array of high-absorbance for IR detection (~55% at 3.8 μm). |
9C-1 Nanoelectronics 2 |
(Invited) Micro-Magnet Techniques for Implementing Spin Qbits with Quantum Dots, Electron spin qubits have been demonstrated using various techniques with quantum dots (QDs), and it is now getting crucial to prepare multiple spin qubits as the next step. We have recently proposed and demonstrated a micro-magnet technique for making spin qubits and qubit gates, which may meet the requisite for the qubit multiplication. |
9C-2 Nanoelectronics 2 |
Atomic Layer Deposition Encapsulation of Carbon Nanotubes with Al2O3, The need to protect CNTs for further processing has been reported, but a study of the quality of protection has not been undertaken. To that end, we have explored Atomic Layer Deposition (ALD) as a method to encapsulate CNTs in order to protect them from future processing steps. |
9C-3 Nanoelectronics 2 |
Metal-Insulator-Metal (MIM) tunneling diodes have potential application as rectifying, mixing, and harmonic generating devices operating at infrared frequencies. Our research focuses on the rectifying performance of MIM diodes for infrared energy harvesting application.Here, we describe how improved the rectifying performance at zero-bias by using a geometric field enhancement (GFE) technique and boiling water oxidation. |
9C-4 Nanoelectronics 2 |
Stacked nanowire MOSFET devices with gate-all-around (GAA) or independent double gates (ΦFET) are well known for being potential solution for sub-32nm nodes. Our purpose is now to increase their current density per layout surface by stacking the highest number of nanowires. In this work, we present the fabrication of a 13 silicon stacked nanowire architecture for GAA transistors |
9C-5 Nanoelectronics 2 |
Top-Down Approaches for the Fabrication of Titanium Nanostructures, This paper presents two approaches for the fabrication of top-down titanium nanostructures. The advantages and limitations of each process will be discussed, and the results will be compared with titanium structures obtained with a PMMA two layer lift-off process. |
10A-1 Imaging and Metrology |
(Invited) Creative Metrology Development for EUVL: Flare and Out-of-Band Qualification, Extreme Ultraviolet Lithography imposes not only tighter requirements for CD metrology, but also the need for creative metrology approaches to quantify and monitor EUV-specific parameters. In this paper, we will discuss our approaches to the estimate of two key EUV imaging parameters: flare and out-of-band radiation. |
10A-2 Imaging and Metrology |
Optimizing the Performance of Keyhole Diffraction Microscopy, This paper reports our latest progress on optimizing the performance of keyhole diffraction microscopy for integrated circuit inspection. The theoretical limitations (reconstruction algorithms, illumination patterns, samples’ geometry/periodicity, etc.) were studied. The improvement on resolution/detectability were demonstrated by scaled optical experiments, one soft x-ray experiment and one hard x-ray experiment. |
10A-3 Imaging and Metrology |
Measurement of Acid Induced Blur in Polymer Films by Single-Molecule Fluorescence Microscopy, In this work, single molecule fluorescence spectroscopy will be used to provide information on the acid and latent images in a PMMA polymer film containing photoacid generator following exposure and without any subsequent development. This information will be used to determine the associated blur from exposure and post-exposure bake. |
10A-4 Imaging and Metrology |
A novel approach for correcting topography artifacts in SIMS 3D reconstructions is currently under investigation. A scanning probe microscopy (SPM) head is being integrated into the analysis chamber of the NanoSIMS50 at the CRP-GL. Topographical information from SPM measurements taken during SIMS analysis will be used to correct artifacts. |
10A-5 Imaging and Metrology |
Fabrication of Nickel Diffractive Phase Elements for X-Ray Microscopy at 8 keV Photon Energy, We present the fabrication of a Ni phase shifting zone plate for hard X-rays (8 keV) with 100 nm resolution and 3 microns thickness of absorbing structure. The methodology we developed uses plasma etching for pattern transfer in a hard template and electroplating for the growing of final metallic nano-structures |
10B-1 Single-Molecule Detection |
(Invited) Dynamic Single Particle Probes of Temperature and Viscosity in Aqueous Media,
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10B-2 Single-Molecule Detection |
Fabrication of Sub-20nm Nanochannels Integrated with Bowtie Nanoantenna, We present a parallel aproach for the nanofabrication a fluidic system (based on nanoimprint lithography), of micro/nanochannels (12 nm lateral size), connected by tapered inlets, integrated with bowtie nanoantenna. The devices will be used for DNA single molecule detection. |
10B-3 Single-Molecule Detection |
Selective Biomolecular Nanoarrays for Parallel Single-Molecule Investigations, We have developed a strategy to control the immobilization of biomolecules at surfaces in arrayed nanodomains, allowing for the simultaneous monitoring of specific protein/DNA binding events in parallel and at the single molecule level. |
10B-4 Single-Molecule Detection |
Nanomenhirs for Surface-based Biosensing of Lipid Structures, A new surface-based nanoplasmonic biosensor dubbed nanomenhirs has been fabricated, which can be used for the study of large transmembrane proteins located within living cell membranes. The nanomenhirs were embedded within silicon nitride; having been fabricated via patterning with a random assembly of particles and etched using reactive ion etching. |
10B-5 Single-Molecule Detection |
We present a new method of patterning Au nano-dots in selected regions of fluidic channels and self-aligned to the channels, based on multiple resist layer etching and nanoimprint lithography. This method can be directly used for fast and real-time biochemical sensing, and extended to high-throughput fabrication of other 2D arbitrary nano-patterns. |
10C-1 Nanostructures/Devices 3 |
(Invited) CMOS Density Scaling in Non-Planar Multi-Gate Silicon on Insulator Devices, In this talk, we will discuss the challenges of fabricating non-planar multi-gate devices from Si on insulator substrates. We will present experimental results from advanced prototypes of these devices fabricated at densities and dimensions relevant to 14 and 10 nm node technology. |
10C-2 Nanostructures/Devices 3 |
Focused Ion Beam Induced Synthesis of Free-Standing Graphite Nanosheets, In recent years, carbon nanostructures have attracted great attention as building blocks in nanotechnology. Highly ordered pyrolitic graphite was irradiated with FIB at various angles of ion beam incidence, fluences and substrate temperatures. At 600°C we achieved FIB induced synthesis of free-standing graphite nanosheets showing strong photoluminescence at telecommunication wavelength. |
10C-3 Nanostructures/Devices 3 |
A novel approach is introduced for direct-write deposition of high-quality Pt and Pd nanostructures. The combinatorial EBID-ALD approach combines the patterning capability of EBID with the high material quality and thickness control of ALD. In addition to the results for Pt, recent results for Pd EBID-ALD will be presented. |
10C-4 Nanostructures/Devices 3 |
Gas Sensors Based on Vertically Aligned Nanowire Arrays, We present a new nanosphere-based fabrication method for creating large arrays of vertical SiNWs with a periodically perforated top electrode layer. This process is ideal for gas sensing devices but can easily be extended to a wide array of future applications. |
10C-5 Nanostructures/Devices 3 |
Recently self-reciprocating characteristic of carbon nanotube film (CNF)-based cantilever has been observed upon exposure to the light and thermal radiation, which offers a unique way to harvest both light and thermal energy. This paper reports the successful fabrication of CNF-PZT microcantilevers by combining CNF-transfer and microlithography for the first time |
Invited Posters | |
Poster 1-1 (Invited) |
Fabrication of Plasmonic Nanostructures by Etch Mask Transfer, A process for the fabrication of plasmonic nanostructures is presented based on thin film metallization, local creation of etch masks, and argon ion milling. Metallic nanocones, rings, cups, corrals, and triangles are demonstrated. Single cones are integrated for near field microscopy, while arrays of nanostructures are employed for Raman spectroscopy. |
Poster 1-2 (Invited) |
This work presents the fabrication and characterization of an electro-osmotic (eo) pump with a low actuation voltage integrated into a polymeric microfluidic chip. We used electrolessly deposited Ag/AgCl electrodes, which were structured using stop-valves. The experimentally determined pump rate was 0.12 nl / s / V |
Poster 1-3 (Invited) |
Ionic Liquid Ion Sources as a Unique and Versatile Option in Focused Ion Beam Applications, Ionic Liquid Ion Sources (ILIS) are ion sources based on room-temperature molten salts, which could be used in Focused Ion Beam (FIB) applications. The profile distribution of the ILIS beam is measured; a magnetic filter is proposed to separate the different ion species extracted in order to characterize their energy profiles. |
Poster 1-4 (Invited) |
Extreme Brightness: Reaching the Ultimate Limits of the Electron Beam, We report recent results from field emission studies of diamond field emitters and carbon nanotubes. The emission is found to be dominated by resonant tunneling through adsorbed molecules. For these emitters, resonant tunneling can be exploited to produce beams of unprecedented brightness, perhaps up to the quantum degenerate limit. |
P1-1 Directed Assembly Poster |
Towards Reliable Fabrications of Qdot-Nanopatterns on DNA Origami, We monitored binding of streptavidin-coated Qdots to biotinylated DNA origami to determine the several factors governing the speed and the yield of Qdot binding to DNA origami. In addition, we determined forward and backward reaction rate coefficients through analysis of time course data. |
P1-2 Directed Assembly Poster |
Direct Carbon Deposition by EBID at Low Substrate Temperatures, Conventional EBID processes can not be used at low temperature, due to the sticking coefficient of the precursor which approaches unity. In this paper carbon deposition EBID is reported using alkanes as precursor and a substrate temperature between -50 and -150 C. A process at -150 C now is possible. |
P1-3 Directed Assembly Poster |
Patterned Atomic Layer Epitaxy of Si / Si(001):H, We present results from Patterned Atomic Layer Epitaxy experiments of Si using H-terminated Si patterned by STM lithography, and disilane. We discuss the effect of substrate temperature and disilane flux on the average island size, and characterise the types of defect found in the first ML of growth. |
P1-4 Directed Assembly Poster |
Transmission small angle X-ray scattering was used to characterize the cross section of diblock copolymer line gratings assembled on chemically templated substrates with a pitch less than 50 nm. The cross section and the interface roughness value obtained from X-ray data will be discussed and compared with computer simulation results. |
P1-5 Directed Assembly Poster |
Functionalization of Focused Electron Beam Induced Deposits by Directed Self-Assembly, Our new approach combines cutting-edge lithography with molecular self-assembly. SiO2 patterns are written in a single step with focused electron beam induced deposition. Currently, 80 nm patterns can be readily functionalized with fluorescent molecules. Results of our efforts to increase the resolution to 20 nm and beyond are presented. |
P1-6 Directed Assembly Poster |
Block Copolymers for High-Resolution Nanopatterning, We present an approach for increasing structural densities in block copolymer self assembly. |
P1-7 Directed Assembly Poster |
Wafer Scale Integration Of Oriented Carbon Nanotubes Interconnects, It is mandatory to develop adapted integration protocols for large scale integration of carbon nanotubes to use them as next generation materials in microelectronics devices. We present dielectrophoretic manipulations of CNTs that produce oriented CNT patterns at the wafer scale. |
P1-8 Directed Assembly Poster |
Localized Thermal Modification of Surfaces via Electron Bombardment from an STM Tip, In this work we demonstrate that short duration (≈ 1μs) pulses have sufficient energy to modify the surface. |
P1-9 Directed Assembly Poster |
Diblock Copolymer Ordering by NanoImprint Lithography, In this paper we propose a new nanoscale patterning technique for large surfaces based on BCP ordering and NanoImprint Lithography. In our approach molecular ordering is provided by imprinted BCP formulations and self-assembly while long-scale organisation is driven by topography induced with NIL mold. |
P1-10 Directed Assembly Poster |
Block copolymer (BC) lithography is used to fabricate silicon nanoobjects using three processes. Selective reactive ion etching process to fabricate nanopores, e-beam evaporation of Si or SiO to get silicon nanopilars and ULE implantation of Si+ and thermal annealing to locally precipitate Si Nanocrystals. TOF-SIMS, AFM, Photoluminescence and EF-TEM is used as characterization methods. |
P1-11 Directed Assembly Poster |
Template-Assisted Growth of ZnO Nanorod Arrays, We present the solution-based growth of ZnO nanowire arrays from a nanoparticle seed layer patterned by nanoimprint lithography. |
P1-12 Directed Assembly Poster |
A Parametric Study of Electrophoretic Deposition of Single Wall Nanotubes In Nanoscale Windows, We varied critical parameters influential to electrophoretic deposition of single wall carbon nanotubes (metallic and semiconducting) in nanoscale windows (isolated and dense patterns). Control of the number of nanotubes and their distribution is discussed along with their implications for wafer scale processing and commercialization of novel vertical nanotube devices. |
P2-1 Electron or Ion Beam Lithography Poster |
Patterning of Graphene on SiC using a He ion Nanobeam, To evaluate the utility of using a helium ion nanobeam the pattern graphene we have measured the sheet resistance of graphene on silicon carbide as a function of ion dose. A dose above 1xE17/cm2 is needed to significantly increase the sheet resistance. |
P2-2 Electron or Ion Beam Lithography Poster |
Study of Optical Transmittance Through Tack-Typed and Goblet-Typed Dielectric Pillar Arrays, We report a study of optical transmittance on tack-typed and goblet-typed dielectric pillar arrays. |
P2-3 Electron or Ion Beam Lithography Poster |
Real-time Dose Control for Electron-Beam Lithography, Dose variation limits the critical dimension control, line-edge roughness and throughput of EBL. Here we describe the first steps toward providing real-time feedback control of dose for each exposed pixel based on a signal from the sample to be patterned, rather than from the source or another point in the column. |
P2-4 Electron or Ion Beam Lithography Poster |
3D Nano Patterning using Local Ga Implantation and Subsequent RIE Etch, We employ the local implantation of Ga into Si and subsequent reactive ion etching as a 3D patterning technique. The technique promises to provide higher resolutions for 3D patterns than EBL due to the absence of the proximity effect while still being significantly faster than other 3D nano patterning methods such as FIB milling or FIB gas assisted etching. |
P2-5 Electron or Ion Beam Lithography Poster |
Negative-tone E-beam Resist Patterning for more than 1 Tbit/in2 Bit-patterned Media NIL Mold, Three kinds negative-tone EB resist (Nega-A, Nega-B and Nega-C) patterning performances with 100kV xy-stage EB writer (Jeol/JBX-9300FS) for process development and with rotary stage EB writer (Pioneer/EBR-402) for BPM pattern formation will be discussed. 25nm pitch pillar array were resolved. |
P2-6 Electron or Ion Beam Lithography Poster |
Improving the Zero Bias Performance of MIM Tunneling Diodes by Introducing Traps in the Barrier, In our work, we claim that the lower bias tunneling efficiency of MIM tunnel junctions can be improved by introducing traps in the tunnel barrier. We achieve this by oxidizing the first electrode in ZnCl saturated boiling water. Performance improvement is tested by comparing the zero bias resistance. |
P2-7 Electron or Ion Beam Lithography Poster |
Surface Electron Emission Lithography with Electron Source of High Emission Efficiency, We have developed Surface Electron emission Lithography (SEL) to improve the throughput of electron beam lithography. In this study, SEL that is 1:1 electron projection lithography using a planar type silicon nanowire array ballistic electron emitter (PBE) with high emission efficiency is demonstrated. |
P2-8 Electron or Ion Beam Lithography Poster |
In order to better characterize the development of HSQ, we used a quartz crystal microbalance to study its rate of dissolution. We used this technique to determine the development rate in salty developer solution (0 – 20% NaCl in 1% NaOH) and using electrochemical techniques (0 – 2.5 V in 1% NaOH). |
P2-9 Electron or Ion Beam Lithography Poster |
Single Crystal Silicon Nanowires used as Cantilever for Femtonewton Detection, A critical limitation of nanoelectromechanical systems (NEMS) is the lack of a high-sensitivity position detection mechanism. We introduce a noninterferometric optical approach to determine the position of nanowires with high sensitivity and bandwidth. |
P2-10 Electron or Ion Beam Lithography Poster |
We report a detailed comparative analysis of performance of PMMA950k and ZEP520 EBL resists for fabrication of dense nanoscale grating structures, by varying the grating pitch, voltage, dose, and development temperature. We also report a 3D simulation of exposures in PMMA and ZEP explaining the observed difference in sensitivities. |
P2-11 Electron or Ion Beam Lithography Poster |
Among the developments to be performed to secure the take off of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. This paper will identify the key challenges and provide a status of the development work already done in our group. |
P2-12 Electron or Ion Beam Lithography Poster |
In electrostatic electron optics charging of surfaces of insulators separating the electrodes can cause undesired beam fluctuation. Here we describe changes in resistivity of ALD films utilized to mitigate the charges under different operating conditions. It was found that carbon contamination due to poor vacuum conditions can greatly affect the film resisitivity. |
P2-13 Electron or Ion Beam Lithography Poster |
Addressing the Fabrication of Titanium Oxide Nanostructures by Electron Beam Induced Deposition, Titanium tetraisopropoxide (TTIP) was investigated as a precursor for Electron Beam Induced Deposition (EBID) in ultrahigh vacuum (UHV). Herein, we report on the fabrication of localized, pure titanium oxide nanocrstals by post-treatment of the initial deposits. Furthermore, we considerably expanded the EBID technique to the fabrication of layered nanostructures by the consecutive use of two precursor gases, TTIP and iron pentacarbonyl. |
P2-14 Electron or Ion Beam Lithography Poster |
Selective Area ALD Deposition with Nanolithography using SAM as a Resist, We explored the limitation of scaling down of selective ALD with EBL patterning on OTS monolayer. These findings highlight the significance of functional group of SAMs to those scattered electrons with high accelerated energy. Therefore, we designed a new approach to pattern SAMs using low energy electrons for nano-scale lithography applications. |
P2-15 Electron or Ion Beam Lithography Poster |
A method of stitching errors compensation was applied for fabrication of photonic waveguides with e-beam lithography. Optical losses were measured for waveguides with various intentional stitching errors. A significant improvement of waveguides after the errors compensation is shown. |
P2-16 Electron or Ion Beam Lithography Poster |
Surface-Relief Polarization Gratings for Visible Light, Polarization gratings are space-variant subwavelength structured photonic devices that modulate the state of polarization. Using electron beam lithography and reactive ion etching, we have fabricated such devices in the form of dielectric and metallic surface-relief profiles for operation in the visible wavelength region. |
P2-17 Electron or Ion Beam Lithography Poster |
To apply spatial-phase-locked electron-beam lithography at 1 to 5 keV, we measured the secondary-electron yield and contrast of a variety of self-assembled monolayers on aluminum and titanium. |
P2-18 Electron or Ion Beam Lithography Poster |
Fixed Beam Moving Stage electron beam lithography on the Raith e_LiNE system is used to fabricate waveguide coupling device structures, where the relative positions and dimensions of the structures must be reliably controlled. The system’s metrology toolset is used to perform dimensional characterization on the resulting structures. |
P2-19 Electron or Ion Beam Lithography Poster |
Three-Dimensional Proximity Effect Correction for Large-Scale Uniform Patterns, A new method which takes a systematic approach to 3-D PEC in avoiding the feature-by-feature correction without sacrificing the quality of correction result is proposed for large-scale uniform patterns. The method consisting of three steps attempts to achieve the target 3-D resist profile of feature with vertical sidewall throughout a large pattern. |
P2-20 Electron or Ion Beam Lithography Poster |
Development of Metal Etch Mask by Single Layer Lift-Off for Silicon Nitride Photonic Crystals, We present a method for fabrication of photonic crystals in SiN using chrome mask formed by metal liftoff with negative ebeam resist. We demonstrate the ability to fabricate feature sizes as small as 50nm onto 200nm thick SiN membrane with straight sidewalls, excellent etch uniformity, and very high aspect ratios. |
P2-21 Electron or Ion Beam Lithography Poster |
A novel method for enhancing the spatial resolution of PSF without increasing the size of memory has been developed, based on the mathematical formulation. The key idea is to reduce the dimensionality in the representation of the simulation space, exploiting the fact that the PSF is radially symmetric, and increase the spatial resolution in the remaining dimension(s) |
P2-22 Electron or Ion Beam Lithography Poster |
We show how to combine dose modulation schemes and shape adjustment schemes into hybrid correction schemes for e-beam lithography. We test the correction quality of such hybrid schemes for some patterns in the presence of process variations and also compare to the corresponding results for dose only correction. |
P2-23 Electron or Ion Beam Lithography Poster |
High Resolution Electron Beam Lithography Using Polystyrene Negative Resist, The ultimate resolution of polystyrene as a negative electron beam resist was studied. Under optimum condition, we were able to achieve the patterning of 20 nm period lines and 15 nm period 2D dot array, which is believed to be the highest pattern density ever obtained using organic EBL resists. |
P2-24 Electron or Ion Beam Lithography Poster |
E-beam Energy Dissipation in Complex Solid Targets, E-beam exposure resolution depends on the electron energy loss distribution in the resist. We have modeled electron scattering in the mask with MONSEL software and developed an algorithm for extracting the energy loss distribution. Results obtained are in agreement with known resist exposure data. |
P2-25 Electron or Ion Beam Lithography Poster |
Comparison of PSF for non CAR and CAR Resists in E-Beam Lithography, Multiple electron beam lithography could be in the future a serious candidate to address 15 nm nodes as throughput key point might be overcome. However achieving such high resolution means extreme proximity effect correction. Accurate experimental determination of PSF is needed. This paper contributes to this goal. |
P2-26 Electron or Ion Beam Lithography Poster |
High Current Pulse Generation for Thermal Surface Modification Using Standard STM, We measured tunneling current as high as 20 micro ampere caused by short pulses on standard scanning tunneling microscope. By thermal simulation we demonstrated that the pulse duration can be significantly longer than the thermal time constant of many conductive substrates, suggesting that surface heating can be accomplished with these short pulses. |
P2-27 Electron or Ion Beam Lithography Poster |
Experimental Evaluation Method of Point Spread Functions in EBL Used for Proximity Effect Correction, Experimental evaluation of monte-carlo generated point-spread functions used in EBL proximity correction, by visual inspection of the partially developed resist. A uniform interference color represents a uniform remaining thickness and exposure energy distribution, and the uniformity relates to how well the used point-spread function corresponds with the physical reality. |
P2-28 Electron or Ion Beam Lithography Poster |
We compare the performance of four different anti-charging schemes for nanopatterning of PMMA on an insulating substrate using EBL. Coatings of PMMA with Al and a conducting polymer, and Cr and Al films deposited between the PMMA and the substrate are explored, and the sensitivities and process robustnesses are reported. |
P2-29 Electron or Ion Beam Lithography Poster |
Electron Beam Lithography Tools for Low Cost Inspection of Extreme Ultraviolet Lithography Masks, The current state of the art for defect inspection of EUVL masks relies on expensive inspection tools. The authors present a method to perform EUVL mask defect detection using a Vistec Lithography VB300 EBL tool. This can lower the cost and time to manufacture EUVL masks significantly. |
P2-30 Electron or Ion Beam Lithography Poster |
Novel Nanopatterning Strategies for Focused Ion Beam Lithography of Nanophotonic Structures, A Raith nanolithography system fitted to a FIB-SEM instrument was used for the ion beam lithography nanofabrication of a photonic array of elliptical structures. A multipass, spiral-outward patterning strategy for each ellipse, combined with beam position drift correction, mitigated redeposition effects and produced smooth edges in the ellipses. |
P2-31 Electron or Ion Beam Lithography Poster |
Direct Hard Mask Patterning by Focused Ion Beam (FIB), In this paper we propose the direct patterning of inorganic hard mask materials by FIB and subsequent pattern transfer by reactive ion etching (RIE) as an alternative to FIB direct milling. |
P2-32 Electron or Ion Beam Lithography Poster |
The New Method of Electron-Beam Lithography on HSQ at Overlay Writing, We found the method to enhance and to maintain HSQ sensitivity during an E-Beam pattern writing. Adding to the sensitivity enhancement effect, this method can be applied at HSQ pattern exposure to act as the alignment mark fabrication for overlay writing. |
P2-33 Electron or Ion Beam Lithography Poster |
Lithography-Patterning-Fidelity-Aware Electron-Optical System Design Optimization, The electron-optical system (EOS) performance indices related to focusing properties have no direct relationship to lithography patterning fidelity which is judged by the quality of developed resist patterns. A new EOS design methodology which directly incorporates lithography patterning fidelity metrics into the optimization flow is proposed and demonstrated. |
P2-34 Electron or Ion Beam Lithography Poster |
Liftoff Lithography of Chrome for Extreme Ultraviolet Lithography Mask Absorber Layer Patterning, The authors demonstrate sub-50nm lift-off lithography of chrome absorber layers on EUVL masks and characterize both the quality of the resulting lithography, and the defects introduced by the process. |
P2-35 Electron or Ion Beam Lithography Poster |
Commissioning of the 20-bit Vistec EBPG5000plus at the Melbourne Centre for Nanofabrication, Summary of the installation results for the 20bit, 50 MHz Vistec EBPG5000plus at the Melbourne Centre for Nanofabrication. Highlight is sub-10 nm resolution on 1 mm field size. |
P2-36 Electron or Ion Beam Lithography Poster |
Fabrication of Sub-15nm Nanostructures via Metal Lift-Off or Silicon Etching, We report on fabrication of sub-15 nm feature sizes via 30keV electron beam lithography. With an emphasis on successful pattern transfer via metal lift-off or etching, we compare three commonly used resists: positive resists PMMA and ZEP520 and negative resist NEB-22. |
P2-37 Electron or Ion Beam Lithography Poster |
High Sensitivity Electron Beam Lithography Using ZEP Resist and MEK:MIBK Developer, We show that the sensitivity for ZEP-520A resist can be substantially increased by using MEK:MIBK=40:60 developer. When exposed at 5 keV, we achieved a sensitivity of only 2.6 µC/cm^2, though at a cost of reduced contrast of 1.8. The process was able to define 60 nm half pitch grating patterns. |
P2-38 Electron or Ion Beam Lithography Poster |
Focused ion Beam Milling Directed by BASIC-Like Code, Focused ion beam (FIB) is an ideal instrument for milling micron- and submicron-size structures on a wide range of substrates. We have developed a simple and versatile approach for milling structures in FIB systems interfaced to the commercially available Nanometer Pattern Generation System (NPGS). |
P3-1 Electron or Ion Sources and Systems Poster |
We are currently developing a high brightness, low energy spread electron impact gas ionization source. The source is intended for use in high resolution FIB applications. As a proof-of-concept experiment, we have tested our prototype gas chamber devices inside a SEM. We have successfully acquired ion beam patterns and measured ion beam currents using helium, argon, xenon, and air. |
P3-2 Electron or Ion Sources and Systems Poster |
Parallel Electron-Beam-Induced Deposition using a Multi- Beam Scanning Electron Microscope, We present the first results of parallel electron-beam-induced deposition in a multi-electron beam scanning electron microscope. Arrays of dots are deposited from a Pt-precursor with 196 electron beams simultanously. |
P3-3 Electron or Ion Sources and Systems Poster |
Single Walled Nanotube (SWNT) Fiber Field Emission Cathodes, The field emission properties of fiber cathodes that consist only of highly aligned single-walled carbon nanotubes will be presented. The fibers are 100 microns in diameter and 70-80% dense. They operated stably to within 0.6% with a 5mm gap at 7keV and 2.4mA current for hundreds of hours. |
P3-4 Electron or Ion Sources and Systems Poster |
A Comparison of Xe+ Plasma FIB Technology with Conventional Gallium LMIS FIB, A comparison of conventional gallium Liquid Metal Ion Source (LMIS) and Xe plasma source Focused Ion Beam (FIB) systems is presented. Imaging resolution and milling acuity are examined in both the high-current and low-current regimes. Gas-assisted etching and deposition are also examined. |
P3-5 Electron or Ion Sources and Systems Poster |
We investigate the effect of the polarization of light in laser-induced thermionic emission from carbon nanotube forests. We observe that when the electric field of the laser is polarized parallel to the nanotubes, the emission current is approximately two orders of magnitude higher than in the case of perpendicular polarization. |
P3-6 Electron or Ion Sources and Systems Poster |
Statistical Coulomb Forces in Photo-Field Emitters for Ultrafast Microscopy, Ultra fast electron microscopes often use one electron per pulse to avoid Coulomb forces, but have many electrons, at the source and later aperture. However electron-electron interactions can reduce brightness before the aperture. We show a detailed study of Coulomb forces in pulsed photofield emitters using analytical and Monte-Carlo methods. |
P3-7 Electron or Ion Sources and Systems Poster |
In this paper, we will discuss major considerations in charged particle beam development for circuit edit, TEM, and FA nanomachining applications. We will provide a quantitative comparison between the latest experimental results and the theoretical expectations. |
P3-8 Electron or Ion Sources and Systems Poster |
Characterization of a Saddle-Field Ion Source for Proximity Lithography, A cold-cathode saddle-field ion source was constructed and characterized for proximity lithography. The source operates at low pressures by trapping electrons in a long-oscillating path and generates a broad beam of energetic helium ions. We characterize the source by measuring its virtual source size, current uniformity, and through resist exposures. |
P3-9 Electron or Ion Sources and Systems Poster |
Ionic Liquid Ion Sources (ILIS) are ion sources based on room-temperature molten salts, which could be used in Focused Ion Beam applications. The ILIS beam contains several ion species, which are separated in order to characterize their energy profile; the probe size of the filtered beam is also investigated. |
P3-10 Electron or Ion Sources and Systems Poster |
Fine-Focused Beams of Highly Charged Ions, In this contribution we introduce a FIB solution featuring an Electron Beam Ion Source for sub-micrometer beams of noble gas ions and various species of ions of different elements ranging from high to low charge states. Hence different ion ranges, implantation depths as well as sputter yields can be realized. |
P3-11 Electron or Ion Sources and Systems Poster |
Defined Emission Area and Custom Thermal Electron Sources, We report new work from single-crystal boride and carbide thermionic and field emitters. We describe thermionic sources having unique properties including defined emission area, increased stability, and with source diameters from 50 μm to 2 mm. For extreme operating conditions we embedded HfC(310) cathodes which can be circular or shaped. |
P3-12 Electron or Ion Sources and Systems Poster |
MOTIS-Based Focused Ion Beams in Two Flavors, In this poster we will describe the new MOT-based ion beam source. We will detail the aperatus and show images collected with the system. The poster is designed to suppliment the invited talk of Jabez McClelland |
P3-13 Electron or Ion Sources and Systems Poster |
New Applications of XeF2 Chemistry with Focused Ion Beam, This paper will present applications examples of XeF2-assisted milling of three categories of materials: hard ceramics, metals, and Ga-sensitive compound semiconductors. |
P3-14 Electron or Ion Sources and Systems Poster |
Investigation of Deposition Profile For Metal Structure Using Focused Ion Beam, In this paper, we established deposition conditions of metal structure using focused-ion-beam (FIB) system. The parameters such as beam current, deposition time and designed circle diameter are adjusted, and established conditions are used for FIB tip fabrication. |
P3-15 Electron or Ion Sources and Systems Poster |
Pitfalls in the Measurement of FIB Beam Size, FIB resolution is difficult to measure. Instead of resolution beam size is often chosen as a system metric. To compare instruments there needs to be a standard way of doing the measurement. We have found some pitfalls in the procedure that need to be taken into account to avoid errors. |
P3-16 Electron or Ion Sources and Systems Poster |
Advanced Microcolumn with a Quadrupole Electrostatic Lens, A new design of a microcolumn is proposed in order to achieve a low-aberration and low-distortion electron beam while maintaining the wide deflection field. |
P3-17 Electron or Ion Sources and Systems Poster |
Emission Imaging of a LaB6 Emitter, In LaB6 cathodes, the (100) plane is used as the emissive surface. It may have microscopic defects. We have obtained LaB6 cathode emission images, showing features unavailable to optical and electron microscopy. This technique can be used for LaB6 quality evaluation during standard cathode test runs. |
P4-1 Emerging Technologies Poster |
In situ Optical Imaging and Laser Processing in the SEM/FIB: A True EIPBN System, This submission highlights a combined scanning electron microscope and focused ion beam system with the capability of laser induced processing. |
P4-2 Emerging Technologies Poster |
This paper reports the fabrication of nanocomposite-beam (NanoBeam) based microresonators by combining microlithography and layer-by-layer nanoassembly (LbL). Using this combined approach, both the composition and the thickness of the NanoBeam can be readily tuned at nanoscale resolution for optimum performance, which is impossible or very difficult using other fabrication techniques. |
P4-3 Emerging Technologies Poster |
Fabrication of Nanoscale Structures on Micro Patterned Silicon (100) Surfaces, The fabrication of novel silicon-based quantum devices or atomically-precise calibration structures requires atomic control of the silicon substrate. A proceduce is developed to create fiducial marks that can be observed with external metrology tools, which also enables fabrication of large atomically ordered terraces. |
P4-4 Emerging Technologies Poster |
Growth of SiOx Nano-Pillars Using Electron Beam Induced Deposition in an Environmental SEM, SiOx nanopillars have been grown as a function of silicon substrate temperature using tetraethyl orthosilicate (TEOS) precursor gas in an environmental SEM. The results indicate that additional temperature dependent growth mechanisms are possible, which are attributed to electron beam assisted thermal dissociation of TEOS and thermally enhanced precursor surface diffusion. |
P4-5 Emerging Technologies Poster |
Patterned Graphene Oxide Films by a Simple Method, We report a simple process to rapidly fabricate patterned G-O films on dielectric substrates without the need for dry etching and/or additional layer transfer. The patterned film can be reduced by chemical or possibly thermal treatments, for further studies. |
P4-6 Emerging Technologies Poster |
Microstructural Investigations Using Correlative Microscopy in Materials Analysis, Austempered Ductile Iron (ADI) is used in combustion engines and gear box components.For the micro and nanoscopic analysis of the structure and precipitations, scientists typically use both light and electron microscopes. We show results using a new interface for correlative microscopy in materials analysis which offers an easy-to-use solution, allowing seamless integration of these two complementary technologies for the first time. |
P5-1 Extreme UV Lithography Poster |
On-Machine Wavefront Evaluation of the Full-Field Extreme Ultra-Violet Lithography Exposure System, We have been evaluated an accuracy of aberration monitor for the full-field EUVL projection optics. By comparing the measured and predicted wavefront, 0.05 nmrs of an accuracy have been obtained. |
P5-2 Extreme UV Lithography Poster |
EUV-Mask Pattern Imaging by the Coherent Scatterometry Microscope, For mask inspection and metrology, we have developed the coherent EUV scatterometry microscope. This microscope is simple lens-less system that has no objective. The pattern image is reconstructed with the iterative calculation. In this paper, we demonstrate the observation result of the various images on the EUV mask. |
P5-3 Extreme UV Lithography Poster |
We have reported various fabrication methods for synthesizing and direct patterning of hydrogels using optical, hard X-ray , and e-beam lithography. We have sought to develop new techniques to produced hydrogel nanostructures with high throughput by using soft x-ray and extreme ultra violate (EUV) interference lithography. |
P5-4 Extreme UV Lithography Poster |
Image-Based EUVL Aberration Metrology,
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P5-5 Extreme UV Lithography Poster |
Highly spatial coherent, bright 13 nm light has been generated by phase-matched high-order harmonics with a commercial, Table-top, sub-TW laser system. Measured beam divergence of the 13.5 nm HHs were 0.21 and 0.17 mrad at optimized gas density for He and Ne, respectively. |
P5-6 Extreme UV Lithography Poster |
Extreme Ultraviolet Interference Lithography toward 1X nm Nodes, Exposure tool of EUV interference lithography (EUV-IL) has been developing. The fabrication of the transmission grating is a key technology in EUV-IL. Transmission grating patterns for 1X nodes were fabricated. And 17.5 nm L/S resist pattern was replicated. The EUV-IL has a capability to replicate 1X nm for the resist evaluation. |
P5-7 Extreme UV Lithography Poster |
We will present unified instrumental approach to investigate the pH response of photoresists and other polyelectrolytes and demonstrate its utility by quantifying the behavior of a series of nanoparticle based developer solutions. These solutions potentially offer a new opportunity to control the swelling and rate of the development process. |
P5-8 Extreme UV Lithography Poster |
Native Blank Defect Analysis for the Study of Printability, This study focuses on changes in the multilayer structure due to the presence of defects. Defect images in the AIT at different focal depths will be correlated to TEM cross sections of the multilayer and AFM dimensions of the defects on top of the multilayer. |
P5-9 Extreme UV Lithography Poster |
Advanced Metrology For Extreme Ultraviolet (EUV) Mask Blank Defect Reduction, A top challenge for the commercialization of extreme ultraviolet (EUV) lithography is the production of defect-free mask blanks. This paper outlines the rising issues with metrology of increasingly small mask blank defects. Further, SEMATECH’s approach and existing capabilities, including a state-of-the-art metrology toolset to analyze these defects will be illustrated. |
P6-1 Imaging and Metrology Poster |
Self-Actuated Piezoresistive 512-Cantilever Arrays for Large-Area Imaging and Manipulation, Parallel operation of large Scanning Proximity Probes arrays makes possible high rate imaging/measurement. Here, the fabrication and application of arrays of up to 512 independently addressed, thermally driven, piezoresistive sensing cantilevers with vertical interconnections is reported. Results of parallel imaging with overlapping of the single scanned fields are demonstrated. |
P6-2 Imaging and Metrology Poster |
Optical diffraction metrology has been used to characterise the dimensions of shallow silsesquioxane structures, fabricated by a double nanoimprinting process, for use as templates in the self-assembly of block co-polymers. Measured diffraction intensities agree well with optical simulations and AFM measurements. |
P6-3 Imaging and Metrology Poster |
Focused Ion Beam Enabled Characterization of Nanostructured Polymeric Materials, We report the use of focused ion beam (FIB) techniques to characterize both block copolymer samples as well as 3D structured polymeric structures produced by multi-beam interference lithography. Ion beam induced amorphization, sample damage and local heating effects are characterized and FIB prepared samples are compared to cryo-microtomed samples. |
P6-4 Imaging and Metrology Poster |
In-situ TEM annealing experiments of the gallium ion beam deposited platinum films on the silicon substrate was performed. We observed the vigorous Pt-Si combination in contrast to Pt-C separation. Throughout we could anneal our previously suggested scenario on the film formation along with the assumptions which it bases on. |
P6-5 Imaging and Metrology Poster |
From simulations of the energy and direction of backscattered electrons collected in a scanning electron microscope, we should be able to improve images of structures such as copper interconnects buried in SiO2. The depth and thickness information of the buried structure can be retrieved by exploring patterns in electron loss spectroscopy of the angle-filtered electron population. |
P6-6 Imaging and Metrology Poster |
FIB Cross-Sections for Morphological Analysis of Ni-P Hard-Mask Transformation During Plasma Etching, FIB morphological analysis of fluorocarbon (FC) films grown during ICP-DRIE Si etching over electroless Ni-P hard-mask employed in MEMS fabrication. The formation of FC-hillocks on the Ni-P surface is probably due to increased mobility and charging of a FC layer under energetic CxFy+ ion bombardment. |
P6-7 Imaging and Metrology Poster |
The performance of the helium ion microscope, when used in transmission mode, was studied. Computer simulations of ion transmission were mined for performance characteristics - such as beam-spread, transmission ratio and angular dispersion - as a function of beam energy, sample thickness and sample material. Experimental images were also obtained. |
P6-8 Imaging and Metrology Poster |
Iterative Phase Recovery Using Wavelet Domain Constraints, Phase recovery in x-ray diffraction microscopy is investigated here using wavelet-based constrained low-resolution a priori information such as large-area SEM scans. |
P7-1 |
Scanning Proximal Probe Lithography (SPPL) with Sub-10nm Resolution on Calix[4]resorcinarene, In this study, we have demonstrated a maskless nanoscale lithography method based on patterning of 10 to 50nm thick spin-coated molecular resist material, especially calix[4]resorcinarene, by extreme spatial confined electric-field-induced interactions. |
P7-2 |
We will report that the CD-control for multi column system is possible by a simple dosage modulation technique like a method for single-column tools, which was evaluated in the MCC-Proof of Concept (POC) tool consisted of 4-Column Cell (CC). |
P7-3 |
Solid-Immersion Interference Lithography Using a Lloyd’s Mirror, We describe a cost-effective technique to perform ultra high-NA interference lithography based on the Lloyd’s mirror that requires only the use of a high index prism, index matching liquid and a coherent laser source. The method eliminates the need for beam splitters, beam blocks and some steering optics. |
P7-4 |
Focused Beam Induced Etching - Making the Right Choice Between Ions and Electrons, Gas assisted etching with a focused particle beam is popular as maskless direct-write lithography. An overview of etching with ion beams and electron beams is given. Advantages and limitations with regard to crystallinity, roughness and etch rate is addressed. A highly-controllable process to etch Si and Ge will be described. |
P8-1 Micro- and Nano-photonics, Plasmonics Poster |
Invisibility at Visible Frequency Using Carbon Nanotube Carpet, We show a perfect absorption ground plane cloak that works at visible frequency. Such homogeneous perfect absorption carpet is made of low density carbon nanotube "forest", and invisibility has been observed by naked eyes for unpolarized light at entire visible frequency with cloaking area 100 times larger than a wavelength. |
P8-2 Micro- and Nano-photonics, Plasmonics Poster |
Equivalent Chirped Bragg Gratings on SOI Using Optical Lithography, Using the proposed Sampled-Bragg-Grating (SBG) technique, a chirped Bragg grating with apodization is modeled, fabricated, and characterized. The SBG technique greatly relaxes the pattern-placement accuracy required in making chirped grating. |
P8-3 Micro- and Nano-photonics, Plasmonics Poster |
In this study, we prepare a metallic corrugated structure for application as ultrasensitive refractive index sensor. Relying on nanoimprint lithography, the fabrication of metallic corrugated structure was achieved.The plasmonic characteristics of these metallic corrugated structures were fully discussed.This plasmonic sensor has the potential on chemical and biological sensors. |
P8-4 Micro- and Nano-photonics, Plasmonics Poster |
In our recent studies we have found that the most influential factor in the matching of the experimental and simulated responses of metallic nanostructures is the use of correct refractive index. Therefore almost perfect matching of experimental and simulated results have been acchieved. |
P8-5 Micro- and Nano-photonics, Plasmonics Poster |
Large Area 3D Helical Photonic Crystals, A novel IL technique utilizing six separate two-beam exposures for fabricating 3D helical photonic crystals is presented. Both mathematical models and experimentally realized 3D helical photonic crystals are presented. Optical FTIR measurements with the transmission and reflection curves for various polarizations of incident light will be presented. |
P8-6 Micro- and Nano-photonics, Plasmonics Poster |
Flexible PDMS Support Layers for the Evanescent Characterization of Near-Field Lithography Systems, Silver-based 'superlenses' are predicted to offer greatly improved resolution, but are difficult to implement due to the requirement of intimate contact between mask, lens and resist. We present a technique to improve contact without jeopardizing components and explain how the resulting experimental data can be compared to analytical models. |
P8-7 Micro- and Nano-photonics, Plasmonics Poster |
Micro-Fabrication of Terahertz Metamaterial Absorbers, We present a polarisation insensitive resonant metamaterial absorber in the THz region. An experimental absorption of 77% and 65% at 2.12 THz (in the operating frequency range of THz QCLs) is observed for a spacer of polyimide or silicon dioxide respectively. |
P8-8 Micro- and Nano-photonics, Plasmonics Poster |
Fabrication of Digital Planar Holograms for Brighter Power Laser Diodes, We demonstrate for the first time the enhancement of the brightness and power of commercial laser diodes by combination with digital planar holograms. It opens a new route for high power laser diodes. |
P8-9 Micro- and Nano-photonics, Plasmonics Poster |
We detail the concept and process flow for fabricating vertical nanopillar solar cells with the core-shell and/or axial shallow p-n junctions formed using spin-on-dopant (SOD) solutions. Two commonly used doping mechanisms, contact and proximity doping, were done in a thermal furnace. Our process could easily be a high throughput process. |
P8-10 Micro- and Nano-photonics, Plasmonics Poster |
Metallic Color Filtering Arrays Manufactured by Nanoimprint Lithography, In this work sub wavelength arrays of sub wavelength cross were etched in an aluminium membrane to manufacture metallic color filters. Design, manufacturing processes as well as morphological and optical characterizations will be presented |
P8-11 Micro- and Nano-photonics, Plasmonics Poster |
In this letter, we demonstrate the waveguide-plasmon coupling in the silicon-nitride photonic crystal slab with double-coated 20 nm silver films and show a controllable coupling by modulating the lattice constant of the perforated hole-array. |
P8-12 Micro- and Nano-photonics, Plasmonics Poster |
We propose to fabricate a new type of a surface plasmon resonance (SPR) device. For realizing such devices, we controlled a diameter of a nano-hole structure by self-assembly technique using mixed block copolymers. And SPR wavelength shift can be controlled by the nano-hole structure with the controlled diameter. |
P8-13 Micro- and Nano-photonics, Plasmonics Poster |
In this study, the (EOT) phenomena through this metal/dielectric/metal PCS structure were observed in the optical transmission spectra. In addition, an evidence of the surface plasmons coupling via the guided mode resonance at this metal/dielectric/metal PCS is resolved. |
P8-14 Micro- and Nano-photonics, Plasmonics Poster |
Coupling of Surface Plasmons in Au Nanorings with Subwavelength Holes Array, Two characteristic dips were found in which one is from guided mode resonance and the other one is due to the localized surface plasmon resonance. It show that the the coupling resonances can be tuned by means of the geometries of the Au nanorings and the holes array. |
P8-15 Micro- and Nano-photonics, Plasmonics Poster |
Nanofabrication of Photonic Crystal-Based Devices Using Electron Beam Spot Lithography Technique, Photonic crystal-based devices are fabricated via the Spot Lithography technique using electron beam lithography and reactive ion etching. This technique produces uniform, submicron and nanometre scale periodic holes over large areas in the millimetre range and the write time is a factor of 200 less than the conventional technique. |
P8-16 Micro- and Nano-photonics, Plasmonics Poster |
This report investigates the coupling of surface plasmon resonances (SPRs) and localized surface plasmon resonances (LSPRs), which is predicted to exhibit enhanced spectral features. Au nanoparticles were fabricated via three methods, and an Al grating was fabricated via nanoimprint lithography to create the coupled SPR and LSPR device. |
P8-17 Micro- and Nano-photonics, Plasmonics Poster |
Plasmonic Nanopillar Arrays for Enhanced Biosensing, Spectroscopy and Optical Trapping, We propose surface plasmon polariton driven plasmonic gold nanopillar-array system for biosensing, nanospectroscopy and optical trapping. The structure exhibits high refractive index sensitivities, nearfield resolution and optical gradient force. |
P8-18 Micro- and Nano-photonics, Plasmonics Poster |
Fabrication of Plasmonic Nano-Pore Array for Nanobio Sensor, The plasmonic nanosize aperture array has drawn huge interests for biomolecule sensor. In order to obtain the aperture diameter of ~10 nm, 20 keV energy electron beam is exposed. The fabricated plasmonic nanosize aperture array can be utilized as nano-bio sensor |
P9-1 Micro- and Nano-mechanics Poster |
Tantalum Electro-Mechanical Systems For Low Frequency Sensing In Biomimetical Applications, A model for the human cochlea based on the sensing of acoustic pressure with resonant gate transistors is presented. The design, fabrication and characterization of suspended tantalum MEMS gates with lengths in the range 500 μm – 1.6 mm and operating in a frequency range 20 Hz – 20 kHz is reported. |
P9-2 Micro- and Nano-mechanics Poster |
Design of Micro-scale Transmission Light Valve Arrays, A two-dimensional array of micro-scale light valves is described in which light is modulated at each pixel. The light is transmitted through the array. This function is important for certain instruments, such as the near infrared spectrometer to be carried on the James Webb Space Telescope. |
P9-3 Micro- and Nano-mechanics Poster |
Quality Factor Enhancement on Nano Mechanical Resonators Utilizing Stiction Phenomena, A stress-applied nano mechanical resonator was fabricated utilizing stiction phenomena in a wet etching process. The fabrication was carried out using focused-ion-beam chemical vapor deposition (FIB-CVD) and tetramethyl-ammonium hydroxide (TMAH) wet etching. Vibration characteristics of the stiction resonators were evaluated and quality factor enhancement on the resonators was observed. |
P9-4 Micro- and Nano-mechanics Poster |
Uncooled infrared imaging with MEMS microbolometers focal plane arrays is critical for military and civilian night vision applications. This paper summarizes of the critical process-structure-property relationship for vanadium oxide thin films deposited by reactive magnetron sputter deposition including resistivity, temperature coefficient of resistance and inherent 1/f noise properties. |
P9-5 Micro- and Nano-mechanics Poster |
We formed Fe-Ga contained DLC film by FIB-CVD with the ferrocene (C10H10Fe) as a source gas and evaluated the annealing effect. As the result, the Fe removed from the Fe-Ga contained DLC by annealing treatment. |
P9-6 Micro- and Nano-mechanics Poster |
The vibration characteristics-tunable resonator made of diamond-like carbon was fabricated by focused-ion-beam chemical vapor deposition and wet-etching process. As a result, DLC resonator had the extremely large tuning ratio of approximately 690 %. Functional dynamic characteristics of the electrically-tunable DLC resonator will be reported in detail. |
P9-7 Micro- and Nano-mechanics Poster |
Ultrafast Cantilever for High Speed Scanning Force Microscopy, Here we will briefly present the design and fabrication of a high resonance frequency cantilever with out- of- plane tip. The cantilever contains both an integrated piezoresistive silicon sensor and an integrated bimorph actuator. |
P9-8 Micro- and Nano-mechanics Poster |
MEMS Process Compatibility of Multiwall Carbon Nanotubes, Compatibility of carbon nanotubes with a suite of common MEMS processes is determined by comparing SEM and high-resolution TEM imagery of a specific individual nanotube before and after processing. SEM and TEM provide assessments of massive material removal, and more subtle atomic-scale damage, respectively. |
P10-1 Microfuidics, Nanobiology and Cell Guidance Poster |
EWOD-Based Droplet Actuation by Active-Matrix Electrode Array, We will present the design, the fabrication and the initial testing of a prototype 2D active-matrix electrode array for EWOD-based droplet actuation. The simple implementation and the diverse capability of the 2D active-matrix electrode array allow the droplet-based microfluidics to be used in various bioengineering and biomedical engineering applications. |
P10-2 Microfuidics, Nanobiology and Cell Guidance Poster |
Development of On-Chip Micro Vacuum System with Gas-Liquid Phase Transition, We propose miniaturized vacuum system which utilized gas-liquid phase transition in the fabricated quartz glass chip with on-chip pressure measurement. Performance of the micro phase transition pump was showed that maximum evacuation was 0.50atm with about 50℃ temperature difference by using the optical pressure measurement. |
P10-3 Microfuidics, Nanobiology and Cell Guidance Poster |
Optimized Multiplexed Cell Capture Using Parallel Bioactivated Microfluidic Channels, We have developed a microfluidic platform capable of label free capture and detection of pathogenic bacteria. Here we demonstrate an approach which gives the advantages of microfluidics, while allowing for handling of milliliter sized samples. |
P10-4 Microfuidics, Nanobiology and Cell Guidance Poster |
The Influence of Surface Patterning on Bacterial Growth Behavior, We use lithographic processes to fabricate templates for the replication of poly(dimethyl)siloxane substrates with well-defined surface patterns. The influence of these surfaces on microbial growth behavior is then investigated by observing the resulting growth patterns of bacterial colonies by fluorescence microscopy and scanning electron microscopy. |
P10-5 Microfuidics, Nanobiology and Cell Guidance Poster |
Photo Nanoimprint Lithography of Biological Samples Defined by Microfabricated PDMS Stencils, Bioimprint permanently replicates cell features into a methacrylate copolymer which can subsequently be used as a cell culture substrate. The proposed work aims to analyze cell adhesion and proliferation rates on Bioimprinted substrates by confining regions of cell growth via micropatterned PDMS stencils. |
P10-6 Microfuidics, Nanobiology and Cell Guidance Poster |
Suspended, Micron-scale Corner Cube Retroreflectors as Ultra-bright Optical Labels, We are developing suspended micro-retroreflectors as ultra-bright labels for use in diagnostics. The five micron, transparent cubes are fabricated on planar substrates, coated with metal on three sides, and suspended into solution, where they appear bright and are easy to detect using low-cost optics. |
P10-7 Microfuidics, Nanobiology and Cell Guidance Poster |
Fabrication and Characterization of Metal Electrode Embedded Nanopore Device, A metal embedded nanopore device was succesfully fabricated with e-beam lithography, reactive ion etching and atomic layer deposition which provided us high throughput and desired dimension on various metal. The relationship between the ionic conductance and the diameter was differenet in microsize and nanosize by Debye screening effect. |
P10-8 Microfuidics, Nanobiology and Cell Guidance Poster |
We present our work using FEBIP processes to etch nanopores within a silicon nitride membrane. We utilize an electron beam rastered in concentric rings rather than a position fixed beam to reduce charging of the membrane and the effects of gas depletion in the etched region. |
P10-9 Microfuidics, Nanobiology and Cell Guidance Poster |
Tip Based Lithography for Biocompatible Materials, Tip based lithography is a powerful platform capable of creating high-quality patterns of biocompatible materials at tens of nanometers to several microns. The advantages of this novel technique include working at ambient conditions on laboratory benches under biological friendly conditions. |
P11-1 Nanoelectronics Poster |
We propose and demonstrate a novel method for fabricating metal-based single-electron transistors (SETs) that combines a nanoscale island produced by electron beam induced deposition (EBID) of metal with a tunnel barrier dielectric produced by atomic layer deposition (ALD). |
P11-2 Nanoelectronics Poster |
Resistive Switching Characteristics of Hafnium Oxide Nano-Films on Flexible Plastic Substrates, Flexible resistive random-access memories (ReRAM) have come to the forefront as emerging devices suitable for wearable devices. In this study, we fabricate ReRAM devices based on hafnium oxide (HfOx) nano-films sputtered on flexible plastic substrates and investigate the flexible memory characteristics. |
P11-3 Nanoelectronics Poster |
Fabrication of Hybrid Silicon/Metal Island Single Electron Transistors, We report the results of a new process variation from [1]: replacing the silicon island with aluminum, to reduce or even eliminate the doping effects in Si-SETs |
P11-4 Nanoelectronics Poster |
Dehydration Assisted Nanoimprint Of PEDOT:PSS Nanogratings To Improve Organic Photovoltaics, PEDOT:PSS nanogratings are fabricated by a dehydration assisted nanoimprint technique, resuling in high quality nanogratings of 60 nm in height, 70 nm in width, and 70 nm in spacing. PEDOT:PSS nanogratings are used as hole transport layer in blended P3HT:PCBM organic photovoltaic devices, showing improved efficiency compared to non-patterned devices. |
P11-5 Nanoelectronics Poster |
Memory Characteristics of MOS Capacitors With Pt-Nanoparticles-Embedded Gate Layers, room-temperature processable fabrication for nonvolatile memory devices has attracted considerable attention since plastic based devices considered as one of promising next-generation devices are vulnerable to heat. Therefore, in this study, we propose new room-temperature processable fabrication for NFGM by utilizing Pt nanoparticles sputtered in system with a cooling unit. |
P11-6 Nanoelectronics Poster |
Nanofabrication of High Aspect Ratio Nanoscale TSVs, Nanoscale TSVs can potentially enable the emerging high bandwidth and high performance systems as well as the low capacitance interconnects needed for nanophotonic integration. An attempt to fabricate these TSVs is shown in this work. By performing electrical and reliability measurements, the fabricated TSVs can provide valuable data to validate the scalable models. |
P11-7 Nanoelectronics Poster |
Double-Surrounding-Gate MOSFET: Enabling Robust Process Control at Deep Nanoscale, Manufacturing issues of multiple-gate MOSFETs are discussed and a double-surrounding-gate(DSG) MOSFET is proposed to solve these fabrication challenges. A DSG MOSFET allows higher transistor density, improved immunity to CD variation, thin and uniform body patterning with the spacer technology, and excellent gate control. The analytic solution to nonlinear Poisson’s equation is obtained and applied to analyze the DSG device performance. |
P12-1 Nanoimprint Lithography Poster |
Metal-Assisted Chemical Etching of Si for Fabrication of Nanoimprint Stamps, We demonstrate new method of fabrication of nanoimprint stamps using newly developed metal-assisted chemical etching (MaCE) technique of Si. The stamps are made by MaCE using Hf:H2O2:H2O (4:1:40) with Au as catalyst. High aspect ratio NIL stamps with nano-features are demonstrated. |
P12-2 Nanoimprint Lithography Poster |
The resist filling process in nanoimprint lithography for multi-layered resist is studied with a molecular dynamics simulation. The required press force to fill the mold cavity and the filling ratio of the resist in the cavity are evaluated with the simulation. |
P12-3 Nanoimprint Lithography Poster |
Mass Fabrication of Resistive Random Access Crossbar Array by UV-NIL, UV-NIL is used to fabricate high-density random access crossbar arrays based on a NiO resistive switching system. The high off/on resistance ratio (>104) and reproducible resistance switching characteristics for each active cell were found in different fields and for different wafers. |
P12-4 Nanoimprint Lithography Poster |
Inspection method of deterioration of release coated mold surface has been developed by macro optical inspection method. Macro inspection method reveals that thin release layer behavior during UV-NIL process and deterioration of release layer and release layer undulation. |
P12-5 Nanoimprint Lithography Poster |
Solar Energy Harvesting Photonic Color Filters, We develop energy-generating photonic color filters, which are capable of filtering white light into individual colors, and simultaneously harvest the absorbed light to generate electrical power. Our dual-function devices are based on photonic nanostructures with metallic nanogratings, fabricated by nanoimprint lithography-based processes, and organic photovoltaic cell structure for power generation. |
P12-6 Nanoimprint Lithography Poster |
Low Temperature Thermal Imprint via Frequency Assistance, Frequency assisted imprint is performed by applying a dynamic, sinusoidal force of 1 kN superimposed to a static force of 4 kN by means of piezo translators. At temperatures around the glass transition of the imprinted polymer (PS) the frequency assisted imprint is able to provide an appropriate imprint depth. |
P12-7 Nanoimprint Lithography Poster |
Hybrid Tri-Layer Stamps for Step and Repeat Imprint Lithography, Hybrid, tri-layer stamps for step-and repeat imprint lithography as proposed in this work address major limitations like maximum die area, uniformity on non CMOS grade substrates using hard quartz templates and still maintain advantages of step and repeat technology in resolution and overlay alignment accuracy. |
P12-8 Nanoimprint Lithography Poster |
Anisotropic Filling Phenomenon of Trenches in UV Nanoimprint, The filling process directly affects the pattern transfer fidelity and the process throughput in nanoimprint. It is well reported the resist isotropically flows into the cavities of a mold from all directions under the imprint pressure. In this paper, we report an anisotropic filling phenomenon of trenches in UV nanoimprint. |
P12-9 Nanoimprint Lithography Poster |
Room-Temperature Nanoimprint Using Spin-Coated HSQ with High Boiling -Point Solvent, The HSQ film with uniform thickness is achieved by spin-coating. However, it is required a high imprinting pressure compared to casting method. To achieve low imprinting pressure in spin-coating method, in this study, we propose a new RT-NIL with low pressure using spin-coated HSQ with high boiling-point solvent. |
P12-10 Nanoimprint Lithography Poster |
Evaluation of Effect of Fluorine Additive Agent for Cationic UV-Nanoimprint Resin, UV nanoimprint resin with release properties is required to mass-produce the nanostructure devices by UV nanoimprinting. In this study, we evaluated the effect of the fluorine additive agent for cationic-UV nanoimprint resin by X-ray photoelectron spectroscopy (XPS), contact angle measurement, and scanning probe microscopy (SPM). |
P12-11 Nanoimprint Lithography Poster |
Fabrication of the Seamless Roll Mold Using Inorganic Electron Beam Resist with Post Exposure Bake, In this study, we examined a fabrication method of seamless roll mold using inorganic electron beam resist and post exposure bake (PEB). Using the obtained roll mold, as a result, a nano-scale L&S pattern was obtained over 10 cm seamlessly with roll to roll nanoimprint. |
P12-12 Nanoimprint Lithography Poster |
Replication Of Undercut Trenches for Water Based Lift-Off Process by Residue-Free UV-NIL, Herein we report on a time and cost saving uv nanoimprint process using elastomeric stamp to replicate undercut trenches residual free for a water based lift-off process in a single layer resist. This opens up new exciting possibilities for mass production in polymer electronics. Potentials and limits will be discussed. |
P12-13 Nanoimprint Lithography Poster |
Impact of Hydrofluoroether on Contact Force of Thermal Nanoimprint, We propose a technique to minimize unfilling areas using hydrofluoroether with low boiling point to achieve thermal nanoimprint at a low contact force. This technique enabled the transfer of 100 nm wide line/space patterns on the surface of engineering plastic sheets at, or below, the conventional contact force of 1/3. |
P12-14 Nanoimprint Lithography Poster |
Fabrication of Complex Nanostructures of P(VDF-TrFE) by Dual Step Hot-embossing, In this work, a complex 3D nanostructure is successfully fabricated in the P(VDF-TrFE) ferroelectric thin film by dual step hot-embossing with excellent ferroelectric and piezoelectric properties. |
P12-15 Nanoimprint Lithography Poster |
Soft Patterning on Cylindrical Surface of Plastic Optical Fiber by Sliding Roller-Imprinting, We developed a sliding roller-imprint method to fabricate microstructures on the surface of plastic optical fiber (POF) without damaging it. To demonstrate this technology, we transferred diffraction grating structures with their linewidths of 1 or 2 um from plane electroformed-Ni molds to the cylindrical surface of a 250-um-diameter POF CK-10. |
P12-16 Nanoimprint Lithography Poster |
Viscoelastic Properties Measurements of Thin Polymer Films from Reflow of Nanoimprinted Patterns, We describe in this paper a fast and cost-effective method to measure the viscoelastic properties of a thin polymer film from the reflow of nanoimprinted patterns. |
P12-17 Nanoimprint Lithography Poster |
Fabrication of Nanostructures on Double-Curved PMMA Surfaces by Thermal Imprint with PDMS Stamp, We present a method for imprinting nanostructures in double-curved PMMA surfaces, using an elastic PDMS stamp and a hydrostatic press. Features of sizes down to 420 nm are imprinted on substrates with 1 mm radius of curvature. Results show a strain of 20% in the stamp during imprint. |
P12-18 Nanoimprint Lithography Poster |
Shrinkage Pattern Correction (SPC) in Nanoimprint Lithography, Resist shrinkage must course in nanoimprint lithography (NIL) and they will induce critical dimension errors. To eliminate the critical dimension errors, we estimate the critical dimension errors based on simulation study and proposes correction functions for the mold pattern width in NIL. |
P12-19 Nanoimprint Lithography Poster |
This paper shows a new method to induce uniform pressure over the imprinting field with low pressure. The system uses flexible polycarbonate film which will be inflated by air cylindrically, and we attatch a PDMS replica on it. This paper shows the imprinted PUA pattern. |
P12-20 Nanoimprint Lithography Poster |
High Aspect Ratio Fine Pattern Transfer Using Novel Mold by Nanoimprint Lithography, In this report Si mold with very fine trench pattern is fabricated by use of new edge lithography process. And its pattern is transferred to PMMA film on Si wafer by thermal NIL. |
P12-21 Nanoimprint Lithography Poster |
Novel Nanoimprint Lithography Using Dispersed Molecular Weights, We newly propose dispersed molecular weights resist system, which consists of mixture of multiple molecular weight polymers to realize low pressured imprinting process for high aspect ratio patterns. Smaller Mw polymer is expected to work as a filling component and larger Mw polymer as a base component to keep mechanical strength. |
P12-22 Nanoimprint Lithography Poster |
Evaluation of PDMS Thin Layer as Antisticking Layer for UV Nanoimprinting, In this study, we evaluated the characteristics of the PDMS thin layer as the antisticking layer and examined the durability of this layer by step and repeat (S&R) UV nanoimprinting. |
P12-23 Nanoimprint Lithography Poster |
Evaluation of SiOx Containing UV Nanoimprint Resin, we synthesized SiOx containing UV curable resin by adding SiOx component to organic UV curable resin in order to improve the dry etching durability. In this study, we examined the comparison of characteristics between organic UV curable resin and SiOx containing UV curable resin. |
P12-24 Nanoimprint Lithography Poster |
Effect Evaluation of Pentafluoropropane Gas for UV Nanoimprint Resin By Using Contact Angle Meter, We evaluated the effect of PFP gas for UV-nanoimprint resin by sliding angle measurement. The sliding speed under PFP gas ambient was faster than that under air. This result indicates that the dynamic wettability of the UV-nanoimprint resin for the antisticking layer was improved by using PFP gas. |
P12-25 Nanoimprint Lithography Poster |
In this study, we revealed relationships of the surface coverage of tridecafluoro-1,1,2,2-tetrahydrooctyltrimethoxysilane (FAS13) on a silica surface with adhesive forces on repeated resin detachment. The low surface coverage caused increasing adhesive forces and enlarged the standard deviation owing to an increased of resin adsorption to fluorinated silica surfaces. |
P12-26 Nanoimprint Lithography Poster |
Fabrication of Silicon Template With Smooth Tapered Side Wall for Nanoimprint Lithography, We developed an RIE etching process to fabricate silicon template with smooth tapered side wall for Nanoimprint lithography. |
P12-27 Nanoimprint Lithography Poster |
In NIL, the antisticking layer on molds is indispensable, because molds are in direct contact with replication materials. In this study, we compared the surface condition of anti-sticking layers on silicon substrate formed by CVD method and dip-coat methods. |
P12-28 Nanoimprint Lithography Poster |
Selective Photochemical Reduction of Silver on Nanoembossed Ferroelectric Nanowires, In this work, Pb(Zr3,Ti7)O3 nanostructures are patterned by nanoembossing. The induced rearrangements of domain distributions in the embossed films are monitored by Piezoresponse Force Microscopy; selectively photochemical reduction of Ag particles on the embossed PZT nanowires has been successfully demonstrated. |
P12-29 Nanoimprint Lithography Poster |
UV-nanoimprinting in 1,1,1,3,3-pentafluoropropane (PFP) gas ambient is proposed to eliminate the bubble defects. In this study, we evaluated the curing processes of synthesized radical- and cationic-UV-curable resins that the monomers were disclosed in PFP gas ambient by photo-differential scanning calorimetry (photo-DSC). |
P12-30 Nanoimprint Lithography Poster |
We measured the adhesion and frictional forces by scanning probe microscopy (SPM) under pentafluoropropane (PFP) gas atmosphere. As the results, the adhesion and frictional forces measured under PFP gas atmosphere were lower than these under air. |
P12-31 Nanoimprint Lithography Poster |
Atomic Step Pattering in Nanoimprint Lithography : Molecular Dynamics Study, Resolution limit of Nanoimprint lithography (NIL) is one of the most impressive interests in both scientific and industrial points of views. In this study, atomic scale resolution with nanoimprint atomic stepped mold is investigated through a MD simulation for inorganic SiO2 glass material. |
P12-32 Nanoimprint Lithography Poster |
Hard Stamp Processes for the EVG 620 Full Field Nanoimprint System, Hard stamps have been demonstrated on the EVG 620 instrument at SNF with resolution down to 20 nm. A process for creation of daughter templates from silicon master e-beam exposures has been demonstrated on the EVG 620. Minimal loss of resolution has been demonstrated with this process. |
P12-33 Nanoimprint Lithography Poster |
Tailored Synthesized Silsesquioxane Based Resists For UV-Assisted Nanoimprint Lithography, In this paper, we present results on the development of low-viscosity hybrid organic / inorganic UV-NIL resists based on polyhedral silsesquioxane (SSQ) functionalized with photo-polymerizable aliphatic epoxy groups. |
P13-1 Nanostructures and Pattern Transfer Poster |
Etching of Germanium by Chlorine Gas using a Focused Electron Beam, For the first time, a well-controllable, direct-write, resistless and non-destructive etching process for germanium using a focused electron beam with nanometer resolution could be developed. A comprehensive, systematic study of the etching efficiency on several beam parameters is presented, as well as a comparison between amorphous and crystalline germanium. |
P13-2 Nanostructures and Pattern Transfer Poster |
Di-block Copolymer Directed Anodization of Hexagonally Ordered Nanoporous Aluminum Oxide, We demonstrate successful fabrications of ordered and vertically aligned anodic aluminum oxide (AAO) nanopore patterns directed by hexagonally patterned polystyrene-b-poly(4-vinylpyridine) di-block copolymer layer placed on the roughness-controlled Al film surface. Pore size and interpore distance of AAO formed are ~17nm and 45nm, respectively corresponding to those of di-block copolymer. |
P13-3 Nanostructures and Pattern Transfer Poster |
Selective Graphene Growth from DLC Thin Film Patterned by Focused-ion-beam Chemical Vapor Deposition, We report patterned graphene growth from diamond-like carbon using focused-ion-beam chemical vapor deposition and gallium catalyst. We succeeded in graphitization of diamond-like carbon with vapor-deposited gallium by annealing at 900-1100 degrees Celsius under vacuum. Moreover, we found that thicker diamond-like carbon film tended to become graphene with better crystal quality. |
P13-4 Nanostructures and Pattern Transfer Poster |
We introduce a novel method to fabricate high aspect ratio subwavelength fused silica nanostructures that are over 99% transparent with no scattering for broadband wavelength and wide angle. We will present the detailed fabrication process, theoretical modeling using rigorous coupled wave analysis, and experimental testing of broadband, large incident-angle reflection and transmission. |
P13-5 Nanostructures and Pattern Transfer Poster |
Comparative Study of Nano-Pillar Growth by Helium Ion and Gallium Ion Focused Beams, We report on a comparison between the dynamics of pillar deposition of platinum-containing structures in gallium FIB and HIM. Pillars are grown both in isolation and in dense patterns, under variation of deposition parameters. The set of data then allows analysis of the growth dynamics. |
P13-6 Nanostructures and Pattern Transfer Poster |
Long Range Magnetic Ordering in Nanofabricated Artificial Spin-Ice Arrays, Long-range magnetic order was observed in artificial spin-ice magnetic arrays fabricated by electron beam lithography and physical vapor deposition of permalloy. For the first time, we have observed and measured the thermal ground state of this frustrated magnetic system. |
P13-7 Nanostructures and Pattern Transfer Poster |
We present a process for the fabrication of high-resolution soft x-ray tungsten zone plates. Salty development of HSQ was applied and pattern transfer to tungsten was achieved by cryogenic reactive ion etching via a chromium hardmask. We demonstrate 90-nm thick tungsten gratings with half-pitches down to 12 nm. |
P13-8 Nanostructures and Pattern Transfer Poster |
Cryogenic Silicon Process for Etching 15 nm Trenches and Beyond, We investigate a cryogenic SF6/O2 silicon etching process and show how process parameters and etching mask determine nanoscale profile fidelity. Features down to 10 nm were etched (30 nm pitch). Ultimate scalability using oxide masks will be discussed. |
P13-9 Nanostructures and Pattern Transfer Poster |
X-ray nano-probe microscope based on multilayer-Laue-lenses is expected to focus hard x-ray beam to sub-10-nm size. Small beam size and low fluorescence yield requests high-aspect-ratio metal resolution test pattern with clean background. A method combining nano-pattern transfer technique and atomic layer deposition technique is developed to deliver this challenging nano-structure. |
P13-10 Nanostructures and Pattern Transfer Poster |
Investigation of Graphene Piezoresistor for Use as Strain Gauge Sensors, We have confirmed the large gauge factor of mechanically exfoliated graphene piezoresistors which are fabricated with normal lithography process. The experimental results include electrical resistance of the multi-layer graphene, the relationship between the gauge factor and layer-number of the graphene sheet, and the electrical resistance versus strain under different temperature. |
P13-11 Nanostructures and Pattern Transfer Poster |
Large-Area Pattern Transfer of Metal Nanostructures via Interference Lithography, This paper reports a simple nanofabrication technique which can transfer metallic nanostructures deposited on photoresist (PR) pre-patterns to a transparent glass substrate. By using the PR template patterned by interference lithography, it is demonstrated that periodic metallic nanostructures can be efficiently transferred to uniformly cover a large surface area up to several inch2 with very few cracks. |
P13-12 Nanostructures and Pattern Transfer Poster |
In this research, we report structural and optical properties of n-GaN patterned vertical LEDs fabricated using a nanosphere lithography (NSL) technique.It was found that the optical power of the vertical LEDs with hole patterned n-GaN layers was enhanced by 4.1~4.9 times, as compared to that of the conventional Vertical LEDs. |
P13-13 Nanostructures and Pattern Transfer Poster |
Characterization of Beam-Induced Chemical Structures in the Helium Ion Microscope, We report on the use of a Design of Experiments approach to characterize the deposition of conducting and insulating structures by applying beam induced chemistry in the helium ion microscope. |
P13-14 Nanostructures and Pattern Transfer Poster |
Ion beam lithography of metal inserts is an excellent technology of producing high resolution patterns with very low edge roughness. We created test patterns with feature size below 50 nm in a metal stamp, which was employed as a insert to investigate the replication limit of injection molding. |
P13-15 Nanostructures and Pattern Transfer Poster |
Fluctuations in Lamellar Diblock Copolymer Resists, I derive an analytic expression for the composition fluctuation spectrum of a lamellar diblock copolymer melt. The expression fits test simulations exactly with zero fitting parameters. This framework affords researchers an analytic expression for the line edge roughness spectrum of a diblock copolymer resist. |
P13-16 Nanostructures and Pattern Transfer Poster |
We employed the intruded Au nanocluster (INC) technique to prepare highly uniform, “atomic-scale” (ca. 3 nm) Au nanoclusters as highly active catalysts within Si wafers.Employing the Au nanoclusters as highly active catalysts allowed us to readily and rapidly prepare, at room temperature, unique Si nano-stalactite (SNS) structures of ultrahigh density and very narrow diameter (ca. 10 nm). |
P13-17 Nanostructures and Pattern Transfer Poster |
Nanofabrication of Silicon Carbon Nitride Cantilevers – Comparison of PMMA and HSQ Based Processes, We compare two different fabrication processes for sub-10 nm width SiCN doubly-clamped cantilevers using HSQ and PMMA resists. Emphasis is laid on co-optimizing electron beam lithography (EBL) exposure and development strategies. A novel multi-step HSQ development scheme is also presented. |
P13-18 Nanostructures and Pattern Transfer Poster |
We present results on various post processing techniques to create cooncentric nanostructures. The starting point for all architectures is a self aligned nanopillar with surrounding circular rim in PMMA. This particular shape is obtained by the energy density distribution of incident and backscattered electrons of e-beam exposure and reflects the dual behavior of PMMA as positive and negative resist. |
P13-19 Nanostructures and Pattern Transfer Poster |
Copper Oxide Nanowire Arrays Synthesized from Sputtered Cu Thin Film, Copper oxide nanowires are directly synthesized from Cu thin film without catalysts. Because copper oxide nanowires grow perpendicularly to the substrate and have a low work function, they are practical to field-emission devices. |
P13-20 Nanostructures and Pattern Transfer Poster |
Gratings with pitches down to 7 nm have been consistently achieved on PMMA on diamond substrate. To the best of our knowledge, the 7-nm-pitch gratings reported here are the smallest fabricated by direct e-beam writing to date. Detailed results on the repeatability of the fabrication of the ultra-dense lines and pattern transfer will be reported. |
P13-21 Nanostructures and Pattern Transfer Poster |
Fabrication of an Optical Magnetic Mirror by E-Beam Writing, Optical magnetic mirrors were successfully fabricated using high resolution e-beam lithography to write dense metal nano patterns on dieclectric substrates. Results will be presented on prototype devices patterned on different substrates. |
P13-22 Nanostructures and Pattern Transfer Poster |
Double Patterning Technology: Process Simulation and Fabrication of Optical Elements, In the simulation of double patterning technology, the resist trim, metal deposition and etch were varied in TRAVIT software to optimize the dimensions and the vertical profile of the metal pattern. Optical polarizers for deep UV and optical ranges were fabricated by double patterning using Ir and Al layers. |
P13-23 Nanostructures and Pattern Transfer Poster |
Geometry Controlled Periodic Si Nanopillar Arrays by Dry Oxidation and Wet Etching, Patterned circular holes with diameters and spacing in the regime of ~100 nm to 1 µm, with either square or hexagonal arrangement on Si wafers were made by deep ultraviolet lithography. These samples were oxidized at 1000oC for various durations, and then subjected to controlled chemical wet-etching for removal of produced silicon oxide layer to create protruding nanofeatures. |
P13-24 Nanostructures and Pattern Transfer Poster |
High Aspect Ratio Zone Plate Fabrication Using a Bilayer Mold, Hard x-ray zone plates need high aspect ratio nanostructures for ideal focusing efficiency. Presented is the use of a bilayer mold structure, in which both layers have been used individually for zone plate fabrication. This allows the fabrication of a structure with an effective sum of the two aspect ratios. |
P13-25 Nanostructures and Pattern Transfer Poster |
Few-layer graphene (FLG) have attracted recently major attention of the research community, with many potential applications in microelectronics. In particular, metal-graphene contacts play a critical role in graphene-based electronics and systematic study of characteristics of FLG are require to fabrication devices. |
P13-26 Nanostructures and Pattern Transfer Poster |
Computational Study of Electron-Irradiation Effects in Carbon Nanomaterials on Substrates, The structural changes in electron-irradiated carbon nanomaterials on the substrates are studied with a molecular dynamics simulation. The electron-irradiation effect is modeled based on the binary collision theory. The collision of the backscattered electron from the substrate is introduced using a Monte Carlo simulation of electron scattering. |
P13-27 Nanostructures and Pattern Transfer Poster |
Injection Compression Molding of High-Aspect-Ratio Nanostructures, We replicated high-aspect-ratio nanostructures using injection compression molding which is generally used to reproduction of optical disks. Subwavelength structures are successfully replicated in whole area of the disk with 120 mm diameter and 0.6 mm thickness. |
P13-28 Nanostructures and Pattern Transfer Poster |
High-throughput Fabrication of Engineered Plasmonic Nanoantenna Arrays with Nanostencil Lithography, In this talk, we demonstrate a novel fabrication approach for high-throughput fabrication of engineered plasmonic nanorod antenna arrays with nanostencil lithography (NSL). NSL technique, relying on deposition of materials through a shadow mask, offers the flexibility and the resolution to radiatively engineer nanoantenna arrays for excitation of collective plasmonic resonances. |
P13-29 Nanostructures and Pattern Transfer Poster |
Multi-Tip AFM Lithography System for High Throughput Nano-patterning, We have created multiple and parallel AFM lithography probes with essentially identical heights on the same cantilever, aiming for a large area, rapid fabrication of both nano-island arrays and nano-line arrays. |
P13-30 Nanostructures and Pattern Transfer Poster |
High Precision FIB Fabrication of Customizable AFM Probes, Customizable and exchangeable AFM tips (“Nanobits”) were made of silicon membrane using FIB. High accuracy is trying to be achieved by using special patterning strategies. This eliminates the influence of pattern drift and other distortions. Different methods for improvement of tolerance are considered. |
P13-31 Nanostructures and Pattern Transfer Poster |
In this work, we assess the performance of an acrylate-based EUV resist with a polymer-bound photo acid generator (PAG) at 10 nm node dimensions, targeting a minimum feature pitch of 40 nm. Exposures were performed using electron beam lithography. Pattern transfer performance was evaluated by measuring the evolution of CD, LER and LWR throughout the pattern transfer process. |
P14-1 Optical Lithography Poster |
High-Contrast Images Obtained with Displacement Talbot Lithography, In Displacement Talbot Lithography a mask carrying a periodic structure is illuminated with collimated light. During the exposure the wafer is moved by one Talbot period towards the mask to record an integral image. The new technique enables uniform nano-patterning of large areas in a non-contact setup. |
P14-2 Optical Lithography Poster |
Single-Step Interferometric Patterning of High-Aspect-Ratio Three-Dimensional Nanostructures, Using the standing wave phenomena commonly regarded as a deterrent in lithography, complex, three-dimensional, nanostructures are manufactured in a single step using an interference lithography system. Porous as well as pillar structures with aspect ratios as high as 1:8 were readily produced using this methodology. |
P14-3 Optical Lithography Poster |
We discuss our development of an immersion interference lithography exposure tool, based on a unique new long-coherence-length 197 nm solid state laser system, that enables high-contrast interference pattern exposures over a full die field at commercially viable powers. We discuss our metrology approach to ensure pattern straightness and alignment. |
P14-4 Optical Lithography Poster |
Fast Aerial Image Simulations Using One Basis Mask for Optical Proximity Correction, This paper proposes a lithographical simulation algorithm for OPC using only one basis mask to generate the lookup table. By exploiting the space-shift invariant property of 2D convolution, the preimage of any mask can be obtained by shifting the preimage of the basis mask. Hence the storage requirement of the lookup table can be greatly reduced. |
P14-5 Optical Lithography Poster |
Image Invariant and Information Content Comparisons across Sub-32nm Technologies, It is challenging to establish comparative image content metrics for use across lithography system architectures, such the options under consideration for 32nm device generations and beyond. This paper presents an approach to compare image capacity and content for lithography alternatives as well as the complexity of additional steps involved. |
P14-6 Optical Lithography Poster |
Fabrication of High-Aspect-Ratio Nanopores by Interference Lithography, We present our results on fabrication by optical interference lithography (IL) nanofilters with high-aspect-ratio pores in approximately 10-micron-thick SU-8 resist thus providing structural strength without the need of a subframe. The high porosity and uniform pore size produced by IL will enable a new line of nanofilters. |
P14-7 Optical Lithography Poster |
We propose a hybrid lithography, by combing both near field lithography with reversal imprint technique for high resolution patterning with a good opportunity of wafer scale manufacture, named as combined near field lithography with reversal imprint (CNR). Preliminary results show that 400nm line width dense pattern has been successfully achieved. |
P14-8 Optical Lithography Poster |
Kernel Based Parametric Analytical Model of Source Intensity Distributions in Lithographic Tools, A parametric analytical model is proposed for overall representation of the physical distribution property of partially coherent illumination sources in lithographic tools. A set of kernels are adopted to construct the analytical model for the multiple mainstream illumination sources. Corrected parametric terms are subsequently presented for characterization of different physical distortions and deviations of source intensity distributions. |
P15-1 Patterned Media, Data Storage Poster |
Studies in Synthetic Antiferromagnetically Coupled Ring Array Magnets via Hysteresis Loops, |
P15-2 Patterned Media, Data Storage Poster |
Master Pattern Formation of Bit-Patterned Media by E-Beam Direct Drawing, We developed new rotary stage e-beam tool for bit-patterned media (BPM) fabrication. As experimental results, pattern formation of 500 Gbpsi BPM with servo pattern was demonstrated using a positive-tone resist ZEP-520A. Furthermore, formation of a dot array pattern with an areal density of 1 Tbpsi was achieved using a high-resolution negative-tone resist. |
P15-3 Patterned Media, Data Storage Poster |
A surface reconstruction technique was applied with polystyrene-b-poly(ethylene oxide) (PS-b-PEO) and polystyrene-b-polyvinylpyridine (PS-b-PVP) to fabricate silicon nanodots with an areal density beyond 1 Teradots/inch2. |
P15-4 Patterned Media, Data Storage Poster |
Graded Bit Patterned Media via Helium Ion Irradiation, Graded bit patterned media is fabricated and measured using polar MOKE. SRIM simulations were performed to design the experiment. Results are compared to irradiated BPM. |
P16-1 Simulation and Modeling Poster |
A new plasma processing simulation software was developed and implemented at Ilmenau University of Technology. This program was used for the simulation of the cryogenic plasma etching of nanostructures in silicon, done at LBNL |
P16-2 Simulation and Modeling Poster |
We modeled secondary electron emission from SiO2, where the charging during tens-of-keV He/Ga ion irradiation is included. This paper presents charging effects on scanning ion microscope images of the basic structures of IC device, i.e., an insulator/metal bilayer and insulating step/trench on a Si substrate at 10–100 nm scale. |
P16-3 Simulation and Modeling Poster |
Dwell Time Adjustment for Focused Ion Beam Machining, Micro/nano fabrication of hard brittle material is carried out by FIB machining with dwell time adjustment. This is convolution model derived from Preston’s hypothesis. More specifically, the target removal shape is convolution of unit removal shape. In conclusion, method A-B (FFT and subsequently constraint problem calculation) is the most effective. |
P16-4 Simulation and Modeling Poster |
Surface Deformation Of Ga+ Ion Collision Process via Molecular Dynamics Simulation, Our previous paper revealed that the hillock height of Si surface caused by ion collision and MD simulated height have been coincided. In this paper, transient process of hillock formation to sputtering removal phenomenon can be observed via MD simulation. |
P16-5 Simulation and Modeling Poster |
High Accuracy Charged Beam Modeling in MICHELLE–eBEAM, We report on the latest development in the SAIC/NRL MICHELLE–eBEAM modeling framework designed for high accuracy simulations of electron and ion beams with stochastic space charge effects. |
P16-6 Simulation and Modeling Poster |
Computationally fast method for simulation of the post-exposure bake reaction-diffusion processes is compared with rigorous lithography simulator by looking into the model accuracy, the prediction power and the computational runtime. The simplified reaction-diffusion PEB model reduces the computational cost while keeping the accuracy of the model and providing good calibration. |
P16-7 Simulation and Modeling Poster |
Process Window Modeling Using Focus Balancing Technique, In this work we present a process window OPC modeling using only nominal process condition empirical data. In order to guarantee modeling success, a focus balancing technique is used during model calibration, which significantly reduces the total model calibration runtime. |
P16-8 Simulation and Modeling Poster |
Beam-Based Measurements in Electron Microscopy, Twiss (or Courant-Snyder) parameters are widely used for particle accelerators and beamlines. We will apply the Twiss formalism to electron microscopy and will present simple relations that result. We will show how this can be a useful, practical technique for system design and system tuning. |