☰ EIPBN

EIPBN 2011 Table of Contents


Section Abstract and Authors
Plenary 1

New Era of Electron Beam Lithography, Burn Lin, TSMC

We will show the requirement in using MEB DW for semiconductor high volume manufacturing, such as resolution, overlay accuracy, processing window, throughput, cost, and timing as well as possibilities to meet the requirements. It is feasible that MEB DW can reach 100-200 wph with a silicon area exposure cost lower than scanner counterparts of corresponding lithography requirement. MEB DW can also reduce lithography cost in transition of wafer size from 300 to 450 mm. If MEB DW can be successfully developed in time, the era of e-beam lithography for wafers will finally come.

Plenary 2

High Density 3D Through Silicon Stacking (TSS) – Game Changing Technology?, Matt Nowak, Qualcomm

The semiconductor industry has continued to advance due to lithography driven dimensional scaling.  Materials and device structure innovations have also been necessary to overcome the “red brickwall” roadblocks for continued CMOS scaling. However, the cost savings from continued scaling is diminishing with each new technology node as the industry adopts these complex lithography, materials, and device innovations. 3DIC technology offers a potential solution for continued performance scaling.  This talk reviews the status of high density 3D TSS and its potential for realizing its promise as a game changing technology.

Plenary 3

Silicon Photovoltaics: Accelerating To Grid Parity, Mark Pinto, Applied Materials

The promise of solar power as a renewable energy resource has a long history dating back to the discovery of the photovoltaic (PV) effect in 1839, the first silicon solar cell in 1954 and the first oil price spikes in the 1970s. More recently the concerns about climate change together with $100+/bbl oil have encouraged renewed investments in a variety of solar technologies. However lost in headlines about resulting company failures and popped stock valuations is the fact that PV installations have been growing at an extremely healthy rate (~3X in 2010-2011 to > 70GWp cum installed worldwide) owing primarily to cost reductions afforded by manufacturing and technology improvements to the original crystalline silicon (cSi) PV cell. In fact in the past 2 years, cSi module cost learning curves have accelerated over their historical norms as a function of both volume and time, and as a result cSi PV has reached parity with conventional forms of electricity in an increasing number of places in the world. In this talk likely cSi PV technology paths and market implications will be reviewed, leading to a prediction that unsubsidized, cost-effective PV electricity will be delivered to > 95% of the world’s population by 2020.

1A-1
3DIC (Special Session)

Monolithic 3D Integration (Invited), Zhiping Zhang, Chien-Yu Chen, Filip Crnogorac, Peter Griffin, Fabian Pease, James Plummer and Simon Wong, Stanford University

1A-2
3DIC (Special Session)

Overcoming 3DIC Technology Hurdles (Invited), Vyshnavi Suntharalingam, Chenson K. Chen, Chang-Lee Chen, Jeffrey M. Knecht, Donna R. W. Yost, Keith Warner and Craig L. Keast, MIT Lincoln Laboratory

In this invited talk we present an overview of Lincoln Laboratory's SOI-based, wafer-scale 3D-integration technology. We include several application examples of image sensors and other densely integrated circuits.

 

1A-3
3DIC (Special Session)

Heterogeneous 3D Integration (Invited), Robert Patti, Tezzaron Semiconductor

In this paper 3D integration and its dependence on TSV size will be discussed. Actual operating devices and the tradeoffs made are reviewed. The impact of TSVs from 30um to 0.4um diameter are covered. This was an invited paper.

1B-1
EUV 1

EUV lithography in pre-production mode (Invited), eric hendrickx, jan hermans, gian lorusso, philippe foubert, ivan pollentier, rik jonckheere, mieke goethals, geert vandenberghe and kurt ronse, imec

In the first half of 2011, the ASML NXE:3100 pre-production tool was installed in the imec 300mm cleanroom. Because of the higher power, wafer batches can be exposed and the NXE:3100 is a true pre-production tool. We review the progress made on the tool after one year of NXE:3100 operation.

1B-2
EUV 1

Fundamental Study of EUV Resist Line Edge Roughness: Characterization, Experiment and Modeling, Ramakrishnan Ayothi, Lovejeet Singh, Yoshi Hishiro, Jed Pitera*, Linda Sundberg*, Martha Sanchez*, Kumar Virwani*, Karen Petrillo**, Luisa Bozano*, Gregory Wallraff* and Yueming Hua***, JSR Micro Inc, *IBM Research Almaden, **IBM Systems and Technology, ***Park Systems Inc

The origin and consequences of the roughness of developed resist features (line edge roughness or LER) has been the subject of many studies over the past several years. In this report we describe studies on the origins of LER in model EUV resists.

1B-3
EUV 1

High-resolution patterning with EUV interference lithography, Yasin Ekinci, Andreas Langner, Birgit Paivanranta, Bernd Terhalle, Mohamad Hojeij, Li Wang, Michaela Vockenhuber and Eugenie Kirk, Paul Scherrer Institute

We show the high-resolution patterning capability of EUV-IL with  sub-10 nm resolution. We show that various types of complex patterns can be generated by EUV-IL using  advanced holographic methods. We were able to fabricate complex periodic nanostructures such as honeycomb and kagome patterns as well as 2D quasi-periodic (Penrose) nanostructures.

1B-4
EUV 1

Defect Tolerant Extreme Ultraviolet Lithography, Lukasz Urbanski, Jorge Rocca, Carmen Menoni, Mario Marconi, Artak Isoyan* and Aaron Stein**, Colorado State University, *Synopsys, Inc., **Brookhaven National Laboratory

A defect-tolerant lithography method using the Talbot effect in combination with a coherent table top EUV laser is presented. Defect-free prints were obtained from periodic masks with intentionally fabricated defects. The influence of the defect size is analyzed.

1C-1
Metrology & Imaging

Optimization of the Gun, Lenses, and Detectors for High-Vacuum SEM Studies of Non-Conductive Specimens, Roger Alvis, Brandon Van Leer, David Wall, Daniel Phifer, Laurent Roussel, Ingo Gestmann and Ozan Urgula, FEI Company

Advanced gun, lens and detector instrumentation enable high-vacuum SEM to reveal ultra-high resolution topography from non-conductive specimen over a continuous wide-range of operational parameters, extending beyond conventional low-energies (<5kV) well into the ultra-low energy regime of a few 10s of volts.

1C-2
Metrology & Imaging

Towards Secondary Ion Mass Spectrometry on the Helium Ion Microscope, Tom Wirtz, Lex Pillatsch, Nico Vanhove, David Dowsett, Sybren Sijbrandij* and John Notte*, Centre de Recherche Public - Gabriel Lippmann, *Carl Zeiss NTS LLC

Adding Secondary Ion Mass Spectrometry (SIMS) capabilities on the ORION Helium Ion Microscope allows high-resolution microscopy and high-sensitivity chemical mapping on a single instrument, reaching a new level of correlative microscopy. Our experimental results show in particular that detection limits down to the ppb level are possible.

1C-3
Metrology & Imaging

Design and fabrication of micro optical system for multi-optical probe confocal microscopy for large areal measurement, Jiseok Lim, Seoyeong Hwang*, Myungki Jung* and Shinill Kang*, Max Plank Institute of Biophysical Chemistry, *School of Mechanical Engineering, Yonsei Univ

In this research, to investigate a feasibility of confocal microscopy for large areal inspection, a multi-optical probe confocal microscopy which has 1mm x 1mm inspection area using 100µm treble length nano-stage was designed and constructed. 

1C-4
Metrology & Imaging

The contrast mechanisms of LL-BSE electrons from Hybridization & Band Gaps, Heiner Jaksch, Carl Zeiss

LL-BSE electrons are not known so far in FE-SEM. They show very non-linear and non monotonic contrast from plasmons, hybridization and band gaps. This contrast mechanism is new and is able to characterize all kinds of oxidization state of elements since the described mechanisms are generated from the valence electrons.

1C-5
Metrology & Imaging

SEM dimensional metrology on sub-15 nm bit-patterned media using model-based analysis, Sergey Babin, Justin Hwu* and Peter Yushmanov, aBeam Technologies, Inc., *Seagate

Automatic physics-based analysis of SEM images is presented. Dot arrays with 27 nm pitch was the measurement target. Significant improvement was demonstrated when using model-based metrology; the uncertainty of measurements was improved by a factor of five compared to regular analysis methods.

2A-1
Optical Litho

Deep-subwavelength patterning with photoswitchable molecules, Precious Cantu, Nicole Brimhall, Trisha Andrews*, Rossella Castagna**, Chiara Bertarelli** and Rajesh Menon, University of Utah, *Massachusetts Institute of Technology, **Politecnico de Milano and PoliMi

Here we discuss a far-field nanopatterning technique that uses photochemical transitions to break the diffraction barrier using only low light intensities, opening the door to massive parallelization. We call this method Patterning via Optical Saturable Transformations (POST).

2A-2
Optical Litho

Large area optical lithography using cylindrical masks, Boris Kobrin, Alfred Renaldo, Mukti Aryal and Ian McMackin, Rolith, Inc.

We report on the progress of “Rolling Mask” optical lithography, which has capability to surpass other methods in throughput, cost and quality. Width of cylindrical mask can be scaled up without compromising process uniformity. Pattern quality and mask lifetime are better in the absence of the typical feature filling and demolding problems of nanoimprint lithography (NIL).

2A-3
Optical Litho

Phase shifting mask for high-throughput high-contrast patterning with Displacement Talbot Lithography (DTL), Christian Dais, Francis Clube, Harun Solak, Kimio Itoh*, Yukio Taniguchi* and Morihisa Hoga*, Eulitha AG, *Dai Nippon Printing Co., Ltd.

It is shown that clear phase shifting masks can be used not only to multiply the throughput of a Displacement Talbot Lithography system but also to increase the contrast of the DTL image. 350nm period hole array pattern is produced over 4” wafers in full-field demonstration exposures

2A-4
Optical Litho

Photodeactivatable photoresists for visbile-light nanolithography?, Michael Stocker, Zulya Tomova and John Fourkas, University of Maryland

Two-color exposure/deactivation schemes are being developed that make possible the use of visible light for achieving lithographic resolution on the order of tens of nanometers.  Recent advances in this technology will be discussed.

2B-1
EUV 2: Masks

EUV Mask Challenges, Status & Closing The Remaining Technology Gaps (Invited), Frank Goodwin, Vibhu Jindal, Patrick Kearney, Ranganath Teki, Jenah Harris-Jones, Andy Ma, Arun John Kadaksham and Stefan Wurm, SEMATECH

Although similar in form to the substrates used in optical lithography, the tolerances on figure, surface finish, and defects are significantly more stringent for EUV substrates.  This paper discusses the ability of EUV masks and mask blanks to meet achieve meet HVM specifications.

2B-2
EUV 2: Masks

Lithographic Performance of EUV Mask using Coherent Scattering Microscopy, Jonggul Doh, Sangsul Lee, Jae Uk Lee, Seongchul Hong, Inhwan Lee, Jinho Ahn, Dong Gun Lee* and Seong-Sue Kim*, Hanyang University, *Samsung Electronics

We report the application of the coherent scattering microscopy (CSM) equipped with femto second laser-based EUV source to analyze aerial images for the EUVL mask.CSM provide and expect the useful information for the issues in high-NA EUV imaging.

2B-3
EUV 2: Masks

Development of Standalone Coherent EUV Scatterometry Microscope for EUV Mask Observation, Tetsuo Harada, Masato Nakasuji, Takeo Watanabe, Hiroo Kinoshita and Yutaka Nagata*, Univ. of Hyogo, CREST-JST, *RIKEN, CREST-JST

We have developed the standalone coherent EUV scatterometry microscope, which evaluate EUV masks. This system is simple lensless type, and equipped coherent EUV source of high-harmonic generation, which is generated by non-linear wavelength conversion from near-infrared pumping laser. We succeed to inspect defects on the EUV mask.

2B-4
EUV 2: Masks

At-Wavelength EUV Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors, Mitsunori Toyoda, Kenjiro Yamasoe, Tadashi Hatano, Mihiro Yanagihara, Akifumi Tokimasa*, Tetsuo Harada*, Takeo Watanabe* and Hiroo Kinoshita*, IMRAM, Tohoku Univ., *Univ. of Hyogo

Motivated by the need for at-wavelength observation of EUV lithography masks, we are developing a full-field microscope based on an innovative objective enhancing a magnification over 1000. The novel multilayer-mirror microscope also has a large field of view in a few hundred micron scale with a diffraction-limited resolution, which allows us a rapid whole mask inspection.

2C-1
TIP-Based Nanofabrication

Probe nanopatterning: Towards a smarter lithography technology (Invited), Michel Despont, Philip Paul, Felix Holzner, James Hedrick, Armin Knoll and Urs Duerig, IBM Research

A probe-lithography method based on the local removal of organic resist materials allowing arbitrary 2D- and 3D-shaped patterns is presented. The combination of fast ‘direct development’ patterning of resist and the in-situ metrology capability of AFM allows the typical turnaround time for nano-lithography to be reduced to only minutes.

2C-2
TIP-Based Nanofabrication

Tip-Based Nanofabrication and Nanometrology of Functional Nanodevices using Heated Cantilever Arrays (Invited) ,  W.P. King, UIUC

 

2C-3
TIP-Based Nanofabrication

Determining Tip Position Tolerances for Atomically Precise STM lithography of Si(001):H, Justin Alexander, Joshua Ballard, Ehud Fuchs, James Owen, John Randall and Jim Von Her, Zyvex Labs

Our objective is to create atomically precise structures on H-terminated Si(001), using STM-stimulated depassivation of H. The position of the tip on the dimer row is crucial to enable pattern drawing with zero line edge roughness, thus we are quantifying the tolerances for the writing process.

2C-4
TIP-Based Nanofabrication

Improved single ion implantation with scanning probe alignment, Michael Ilg, Christoph Weis, Ivo Rangelow* and Thomas Schenkel, Lawrence Berkeley National Laboratory, *Technical University Ilmenau

Single dopant atoms can affect transport in scaled transistors and encoding of quantum information in spins of single dopant atoms or color centers enables exploration of quantum computer architectures.  Single ion implantation with scanning probe alignment is a technique for placement of single dopant atoms with high spatial resolution.

3A-1
Graphene (Special Session)

Graphene Nanoelectronics (Invited), CY Sung, IBM, Watson

 

3A-2
Graphene (Special Session)

Graphene for RF Applications: Opportunities & Challenges (Invited), J. S. Moon, M. Antcliffe, H.C. Seo, S.C. Lin, A. Schmitz, I. Milosavljevic, K. McCalla, D.K. Gaskill*, P.M. Campbell*, K.-M. Lee** and P. Asbeck**, HRL, *NRL, **UCSD

Graphene offers new opportunities for development of high frequency transistors, NEMS/Sensors/flexibile electronics on large-scale.  In this talk, we will present recent progress in epitaxial graphene RF transistors, suspended membranes,graphene-on-flex, and in circuit concept demonstrations toward mm-wave radiometers and imaging.

3A-3
Graphene (Special Session)

Graphene-based & Graphene-derived Materials (Invited), Rod Ruoff, UTAustin

 

3A-4
Graphene (Special Session)

Scalable Graphene Field Effect Transistors with Boron Nitride Dielectrics (Invited), Nick Petrone, Inanc Meric, Cory Dean, Arend van der Zande, Lei Wang, James Hone and Ken Shepard, Columbia University

This paper describes on-going work toward the development of scalable graphene field-effect transistors for RF applications based on boron nitride gate dielectrics.

3B-1
Nanoimprint 1

Nanoscale Manufacturing Using Jet and Flash Imprint Lithography (Invited), SV Sreenivasan

 

3B-2
Nanoimprint 1

High aspect ratio lift-off process and silver optimization for negative index materials in the visible, Iris Bergmair and Andreas Rank, Functionlal Surfaces and Nanostructures, PROFACTOR GmbH

We demonstrate for the first time the fabrication of large area negative index materials with resonance frequencies in the visible regime by Nanoimprint Lithography – a method suitable for mass production. We show a two layer lift-off process enabling high aspect ratio metallic structures and a silver annealing and passivation procedure.

3B-3
Nanoimprint 1

Demonstration of sub-4 nm nanoimprint lithography using a template fabricated by helium ion beam lithography, Wen-Di Li, Wei Wu and R. Stanley Williams, Hewlett-Packard Labs

We demonstrated sub-4 nm patterning resolution by combining helium ion beam lithography and nanoimprint. We also explored using direct milling to make NIL templates for possible approaches of further increasing the HIBL/NIL patterning resolution. Our work combining HIBL with NIL paves a promising and viable path towards device fabrication and physics study at single-digit nanometer level.

3B-4
Nanoimprint 1

High-Resolution Non-Destructive Patterning of Isolated Organic Semiconductors, Yi-Chen Lo, Zhenzhong Sun*, Shoieb Shaik*, Dawen Li* and Xing Cheng, Texas A&M University, *University of Alabama

A nondestructive patterning method for organic semiconductors by nanoimprint is investigated in this work. Sacrificial TEFLON AF template is patterned by nanoimprint and then used for depositing polymer semiconductor from solution. Sub-micron polymer semiconductor patterns are achieved for high-performance organic electronic and optoelectronic applications. 

3B-5
Nanoimprint 1

Sidewall-angle dependent pre-filling of three-dimensional microcavities in thermal nanoimprint, Mirco Altana, Arne Schleunitz and Helmut Schift, Paul Scherrer Institute (PSI)

Sidewall inclinations of nanoimprint stamps have a large influence of how filling in thermal nanoimprint lithography is starting. Stable pre-filling states with constant contact angles were found for vertical and inclined sidewalls. They show that filling is dependent on surface energies of polymers and stamps, but also cavity geometry. 

3C-1
Resists

Low Diffusion EUV Resists using Bound PAG Technology (Invited), James Thackeray, James Cameron, Michael Wagner, Owendi Ongayi, Vipul Jain, Paul LaBeaume and Suzanne Coley, Dow Electronic Materials

The development of low diffusion chemically amplified resists has enabled the resolution of 17nm hp features at doses less than 15mj using EUV technology.  Linewidth roughness  and pattern collapse remain difficult challenges for EUV resists.  WE describe the evolution of polymer-bound PAG technology as applied to high resolution applications.

3C-2
Resists

Effect of molecular weight distribution on e-beam resist polystyrene, Ripon Kumar Dey, Raafat Mansour and Bo Cui, University of Waterloo

Polystyrene is a negative tone cross-linking electron beam resist. We here show that its sensitivity and resolution are not adversely affected by a broad distribution of molecular weight. It is thus unnecessary to choose the costly polystyrene with narrow polydispersity for electron beam lithography.

3C-3
Resists

Measurements of the Latent Image in Chemically-Amplified Resists, Ginusha Perera, Yogendra Pandey, Manolis Doxastakis and Gila Stein, University of Houston

CA resists are based on a polymer resin blended with a photo-acid generator. Image resolution is controlled by slow diffusion of the ionic catalyst.  We demonstrate that transmission X-ray diffraction can measure spatial extent-of-reaction in ultra-thin  films of a model CA resist. The latent image structure is calculated from diffraction data through an inverse solution method.

3C-4
Resists

High Resolution Negative Tone Resists via Controlled Polymerization, Richard Lawson, Laren Tolbert and Clifford Henderson, Georgia Tech

This paper reviews our development of materials and approaches for highly spatially controlled polymerization in negative tone resists to enable the formulation of high speed negative resists capable of sub-20nm resolution. Several different approaches will be discussed in the context of both fundamental studies and extensive lithographic testing.

3C-5
Resists

Study of Line-Edge Roughness in ZEP Resist Nanopatterns from Electron Beam Lithography by Numerical Modeling, Kirill Koshelev, Steve Dew and Maria Stepanova, University of Alberta

Optimization of line-edge roughness (LER) and line-width roughness (LWR) is critical for fabrication of structures at the nanometer scale. We propose a novel approach to estimate LER and LWR in a positive-tone electron beam lithography resist numerically. We explore the impact of the non-uniformity of local exposure on the LER.

4A-1
Graphene 2

Graphene transistors with record mobilities on polyimide for high-performance flexible nanoelectronics, Jongho Lee, Li Tao and Deji Akinwande, University of Texas at Austin

We report high-speed embedded-gate graphene FET on smooth polyimide films. The achieved mobility is comparable with the highest mobilities from chemical vapor deposited graphene realized on conventional substrates, indicating that the high-speed attributes of graphene can be accessed for flexible electronics and enable high-frequency GHz flexible systems. 

4A-2
Graphene 2

1 nm Thick Chemically Functionalized Carbon Nanomembranes (CNMs): Two-dimensional Materials for Nanoengineering, Andrey Turchanin, André Beyer, Xianhui Zhang, Polina Angelova and Armin Gölzhäuser, University of Bielefeld

We report on the fabrication, characterization and application of 1 nm thin, chemically functionalized, free-standing carbon nanomembranes (CNMs). These two-dimensional nanostructures are made by combining molecular self-assembly, e-beam exposure and chemical surface functionalization. Examples for their incorporation into hybrid materials and MEMS devices are given.

4A-3
Graphene 2

Nanofabrication of Graphene on SiC by Multi-Ion Beam Lithography and Low-Temperature Processing, Bill R. Appleton, Sefaattin Tongay, Maxime Lemaitre, Arthur F. Hebard, Brent Gila, Joel Fridmann*, Fan Ren, Xiaotie Wang, Dinesh K. Venkatachalam** and Robert G. Elliman**, University of Florida, *Raith USA Inc., **Austrailian National University

Multi-ion beam lithography (MIBL), ion implantation, and thermal or pulsed laser annealing (PLA) are combined to pattern and synthesize graphene nanostructures on SiC crystals at low temperatures. Implantation and vacuum annealing forms graphene nanostructures below the graphitization temperature of SiC , and PLA in air forms graphene near room temperature.

4A-4
Graphene 2

Fabricating Graphene-Silicon Nitride Heterostructures for High-Q Tunable Nanomechanical Resonators, Sunwoo Lee, Robert Barton*, Arend van der Zande, Gwan-Hyoung Lee, Alexander Gondarenko, Jeevak Parpia*, Harold Craighead* and James Hone, Columbia University, *Cornell University

We use a large-scale method to fabricate graphene and silicon nitride heterostructures, and optically drive and detect mechanical resonance for devices. The room temperature quality factors of the heterostructures were ~2000-8000, compared with quality factors of ~20000-30000 for bare silicon nitride devices, and ~ 50-1000 for single layer graphene membranes.

4A-5
Graphene 2

Superconductivity of tungsten-containing carbon nanowires fabricated by focused-ion-beam chemical vapor deposition, Jun Dai, Reo Kometani, Shin'ichi Warisawa, Sunao Ishihara, Koji Onomitsu*, Yoshiharu Krockenberger* and Hiroshi Yamaguchi*, University of Tokyo, *NTT Basic Research Laboratories

We have demonstrated the superconductivity of tungsten-containing carbon nanowires deposited by FIB-CVD using the precursor of phenanthrene mixing tungsten hexacarbonyl. This technique facilitates the direct fabrication for the three-dimensional superconducting nanostructures, expanding the applications to high performance superconducting device like superconducting quantum interference device (SQUID) sensors.

4B-1
NanoImprint 2

Study of defect mechanisms in partly filled stamp cavities for thermal nano imprint control, Andre Mayer, Jyunji Sakamoto*, Saskia Möllenbeck, Khalid Dhima, Si Wang, Hella-Christin Scheer and Yoshihiko Hirai*, University of Wuppertal, *Osaka Prefecture University

The prevention of self-assembly defects, within partly filled stamp cavities in thermal nanoimprint, implies the understanding of internal and external forces within the stamp cavities. Therefore we conduct self-assembly experiments which allow us to differentiate between the different interactions present and to correlate them with processing conditions.

4B-2
NanoImprint 2

Cleaning Induced Imprint Template Erosion, Zhaoning Yu, Nobuo Kurataka, Hieu Tran, Gene Gauzner, Hongying Wang, Henry Yang, Yautzong Hsu, Kim Lee and David Kuo, Seagate Technology

We measured the extremely slow erosion of silica by applying spectroscopic ellipsometry on a subwavelength surface relief grating. Based on our findings, we conclude that silica dissolution is an important factor to be considered in applications such as template cleaning.

4B-3
NanoImprint 2

3-D microfabrication based on a glass transition temperature selective thermal reflow - towards optical applications, Arne Schleunitz, Vitaliy Guzenko, Christian Spreu, Helmut Schift, Martin Messerschmidt*, Hakan Atasoy* and Marko Vogler*, Paul Scherrer Institut (PSI), *Micro Resist Technology GmbH

The reduction in molecular weight in grayscale electron-beam lithography leads to a local variation of the glass transition temperature in the exposed areas. Vertical, stepped and inclined contours in the same resist were fabricated by selective annealing. Master stamps were fabricated for a backlighting device.

4B-4
NanoImprint 2

Single digit nanoimprint lithography achieved by template modification with atomic layer deposition, Scott Dhuey, Christophe Peroz*, Deirdre Olynick, Marko Vogler**, Marion Cornet and Stephano Cabrini, Lawrence Berkeley National Lab, *aBeam Technologies, **micro resist technology

In this work I describe two strategies for fabricating single digit nanostructures on nanoimprint templates by modification with atomic layer deposition.  The first uses ALD to reduce trench width to 7nm, the second is a spacer double patterning process that can create pitches less than 20nm.

4B-5
NanoImprint 2

Sub-20 nm Metal Gratings by Nanoimprint Lithography, Leo Varghese, Li Fan, Yi Xuan and Minghao Qi, Purdue University

Using nanoimprint lithography, we demonstrated metal gratings with ultra high resolution. Grooves of 15 nm width are achieved on silver films with silicon molds that can be reused. This process allows the realization of photonic devices such as metal-insulator-metal structures.

4C-1
Emerging Technologies

Patterning of Sub-10 nm Optical Apertures on Single Crystal Metallic Films with the Helium Ion Microscope (Invited), Daniel Pickard, Vignesh Viswanathan, Michel Bosman*, Jens Dorfmüller**, Harald Giessen**, Zhongkai Ai, Hanfang Hao, Masoud Mahmoudi, Yue Wang and Chao Fang, National Univ of Singapore, *Institute of Materials Research, **Univ of Stuttgart

We employ the Helium Ion Microscope to demonstrate direct patterning of sub-10nm features (free of implanted metal impurities) through optically thick single crystal metallic films. Our demonstration explores fractal apertures and complex multi-modal structures requiring critical dimensions of ~10 nm. The plasmon resonances in these structures are characterized using EELS.

4C-2
Emerging Technologies

The Membrane-Alignment Stage in Fabricating 3-Dimensional Nanostructures, Shabnam Ghadarghadr, Corey Fucetola, Lin Lee Cheong, Euclid Moon and Henry I. Smith, MIT

In this work we describe fabrication of 3D photonic crystals using aligned-stacking of pre-patterned Si membranes. The membranes are released in water and then captured on a frame where they can be aligned and stacked. Preliminary alignment results have been shown.

4C-3
Emerging Technologies

Diamond nitrogen-vacancy centers created by scanning focused helium ion beam and annealing, Zhihong Huang, Wen-Di Li*, Charles Santori, Victor M. Acosta, Andrei Faraon, Wei Wu*, Toyofumi Ishikawa**, R. Stanley Williams* and Raymond. G. Beausoleil, Intelligent Infrastructure Lab, Hewlett-Packard Labs, *Nanoelectronics Research Group, Hewlett-Packard Labs, **Graduate School of Fundamental Science and Technology, Keio University

We investigate a technique for formation of Diamond nitrogen-vacancy (NV) centers near a surface using a scanning helium focused ion beam. Successful NV creation was demonstrated. This result demonstrates a new method to create NVs in diamond and a new application for helium ion beam microscopy.

4C-4
Emerging Technologies

First lithography results obtained with the 2nd generation MeV proton beam writing facility, Jeroen Anton van Kan, Yong Yao, Pattabiraman Santhana Raman and Benjamin Teo*, CIBA, Physics, NUS, *Engineering, NUS

A second generation proton beam writing line has recently been installed at CIBA. This new system has shown superior focusing capabilities for MeV protons down to 13x30 nm^2. In this paper the first lithography results using the new PBW facility will be presented.

5A-1
Maskless Lithography

REBL: A Lithography Solution for High Volume Manufacturing at 16 nm  (Invited), Paul Petric, Chris Bevis, Upendra Ummethala, Mark McCord, Allen Carroll, Jeff Sun, Francoise Kidwingira, Anthony Cheung, Joshua Clyne and Thomas Gubiotti, KLA-Tencor

5A-2
Maskless Lithography

Sub-22nm High Throughput Maskless Nanolithography Using Quasi-3D Plasmonic Lens, liang pan, Yi Xiong, Yongshik Park, Yuan Wang, Ziliang Ye, Xiaobo Yin, Erick Ulin-Avila, Shaomin Xiong, Junsuk Rho, Cheng Sun, David Bogy and Xiang Zhang, Department of Mechanical Engineering, University of California, Berkeley

A maskless high-throughput nanolithography scheme is proposed for lithography, imaging, sensing and data storage, which uses a novel plasmonic lens to obtain feature reaching 10 nm and below, and a flying head to achieve high scanning speeds. This low-cost scheme provides orders of magnitude higher throughput than other maskless techniques.

5A-3
Maskless Lithography

Ultra-high-Numerical Aperture Interference Lithography at High Aspect Ratios using Surface States on Effective Gain Media, Prateek Mehrotra, Chris Mack* and Richard Blaikie, The MacDiarmid Institute for Advanced Materials and Nanotechnology, *Dept. of Chemical Engineering, University ofTexas at Austin

Exponential decay of evanescent images at ultra-high numerical apertures (NAs) makes pattern transfer extremely difficult. We provide feasible methods using reflection resonances from effective gain medium surface states to redistribute evanescent fields & energy in the photoresist cavity to pattern ultra-high-NA structures with high aspect ratios.

5A-4
Maskless Lithography

An FPGA-based Pattern Generator for Massive Parallel High-Speed Nanolithography System, Erick Ulin-Avila, Liang Pan, Shaomin Xiong, Yongshik Park, Yi Xiong, Yuan Wang, Chen Sun, David Bogy and Xiang Zhang, Department of Mechanical Engineering, University of California, Berkeley

An FPGA-based pattern generator capable of achieving high overlay accuracy of subsequent layers for massive, parallel, high speed nanolithography systems. The system compensates for induced time-delays using clock domain control techniques and reduces the uncertainty in angular location by one order of magnitude after implemented in our plasmonic nanolithography System.

5A-5
Maskless Lithography

Multi-axis and Multi-beam technology for high throughput maskless E-beam lithography, Hiroshi Yasuda, Takeshi Haraguchi, Hidebumi Yabara, Kouji Takahata, Hidekazu Murata*, Eiji Rokuta* and Hiroshi Shimoyama*, PARAM Corporation, *Meijo University

We have devised a new maskless E-beam lithography method which can achieve the throughput of 10WPH. The method is called ‘Multi-Axis Programmable Shaped Beam’. It is one of massive parallel EB lithography. From 217,500 to 870,000 beams write a wafer and total beam current reaches dozens of microampere.

5B-1
Ebeam 1

High Resolution Patterning on Non-Planar Substrates with Large Height Variation Using Electron-Beam Lithography, Vishva Ray, Yukinori Aida*, Ryo Funakoshi** and Stella Pang, Lurie Nanofabrication Facility, University of Michigan, Ann Arbor, * JEOL Ltd., **JEOL USA, Inc.

A new method for patterning on non-planar substrates with a large height variation using electron-beam lithography is presented. The surface of the substrate to be patterned is pre-mapped using a laser microscope and the information is used to pattern on the substrate using an electron-beam lithography system.

5B-2
Ebeam 1

Measurement of fogging electron current in scanning electron microscope, Yasuhiro Ohara, Akira Osada, Masaru Otani and Masatoshi Kotera, Osaka Institute of Technology

In the present study, we measured the distribution in a specimen chamber of an ordinary scanning electron microscope.        Electron trajectory simulation in and out the specimen surface considering the existence of the POL is performed. The simulation result agrees well with the experimental results.

5B-3
Ebeam 1

Measurement of Surface Potential Distribution at an Insulating Film Produced by Fogging Electrons in a Scanning Electron Microscope, Masaru Otani, Akira Osada, Yasuhiro Ohara and Masatoshi Kotera, Osaka Institute of Technology

In the present study we measured the potential distribution at an insulating film on a conductive substrate, produced by pure fogging electrons in an SEM specimen chamber, by using our recently developed electrostatic force microscope.

5B-4
Ebeam 1

Arbitrarily Shaped High-Coherence Electron and Ion Bunches from Laser-Cooled Atoms, Robert Scholten, Andrew McCulloch, Daniel Thompson, Dene Murphy, Sebastian Saliba, Keith Nugent, Corey Putkunz and David Sheludko, University of Melbourne

Cold electron and ion bunches are generated by laser excitation and photoionization of laser cooled atoms.        Shaping the beam profiles allows arbitrary and real-time control of the bunch shapes, which are retained in propagation due to the very low electron temperature (10K) and associated high transverse coherence of the source.

5B-5
Ebeam 1

High Aspect Ratio SML Resist Patterning using 30 keV Electron Beam Lithography, Mohammad Ali Mohammad, Steven K. Dew and Maria Stepanova*, University of Alberta, *National Institute for Nanotechnology

We present a detailed process characterization of SML electron beam resist for high aspect ratio (AR) and high sensitivity nanopatterning. Compared to PMMA, we achieve nearly 2x improved AR and contrast due to the novel molecular structure of SML resist which reduces the proximity effects and secondary electron generation.

5C-1
Bit Patterned Media & Nanostructures

Progress and Challenges in Bit Patterned Media Nanofabrication  (Invited), XiaoMin Yang, Shuaigang Xiao, Kim Lee, Gene Gauzner, Koichi Wago, Rene van de Veerdonk and David Kuo, Seagate Media Research

We will give a status update of our recent progress in 1 Terabit/in.2 BPM fabrication and discuss about several key engineering challenges.

5C-2
Bit Patterned Media & Nanostructures

Fabrication of 5 Tb/in2 Bit Patterned Media with Servo Pattern using Directed Self-Assembly, Naoko Kihara, Ryousuke Yamamoto, Norikatsu Sasao, Takuya Shimada, Akiko Yuzawa, Takeshi Okino, Yasuaki Ootera, Yoshiyuki Kamata and Akira Kikitsu, Corporate Research & Development Center, Toshiba Corporation

Fabrication process of Bit Patterned Media (BPM) by using diblock copolymer was investigated. For ordering process of the self-organized dots of small-molecular-weight PS-PDMS (Mn: 8000), solvent annealing showed advantage over the thermal annealing process. By applying solvent annealing, 11 nm lattice spacing of hexagonal pattern was obtained.

5C-3
Bit Patterned Media & Nanostructures

System to Measure the Shear Modulus of Iron at high temperature and pressure using Transverse Displacement Interferometry Fabricated by Electron Beam Lithography, Richard TIberio, Arianna Gleason and Wendy Mao, Stanford University

We designed structures to measure the shear properties of pure iron at high temperature, 5000 Kelvin, and high pressure, 250 GigaPascal, using laser-driven shock compression – an unprecedented measurement.  These conditions approximate those at the Earth’s inner core. We combine a wedged-shaped diamond target with a reflective grating. 

5C-4
Bit Patterned Media & Nanostructures

Taming Nanostructures: From Sponge to Dot Pattern on Ge Controlled by Heavy-Ion-Deposited Energy, Roman Böttger, Lothar Bischoff, Karl-Heinz Heinig and Bernd Schmidt, Helmholtz-Zentrum Dresden-Rossendorf

Regular dot patterns on Ge form under irradiation with Bi_n^+/Bi_n^++ cluster ions. Bi+/Bi++ irradiation with the same energy per atom produces spongy surfaces, dots appear only at elevated substrate temperatures. The morphology dependence on energy per atom in the thermal spike cannot be explained by models published so far.

5C-5
Bit Patterned Media & Nanostructures

Nanofabrication of high aspect ratio (~50:1) sub-10 nm silicon nanowires using plasma etch technologies, Muhammad Mirza, Haiping Zhou, Xu Li, Philippe Velha, Kevin Docherty, Antonio Samarelli, Gary Ternent and Douglas Paul, University of Glasgow

This work has developed the simultaneous etch and passivation processes at ambient temperature. The optimised etching processes have successfully achieved reproducible vertical and smooth sidewall Si nanowires with sub-10 nm resolution and high aspect ratio up to ~50:1 at 20°C using an ICP system with SF6/C4F8 plasma. Thick HSQ resist is used as the etching mask.

6A-1
Grating Based Lithography (Special Session)

Electron beam lithography-based grating customization strategies for gate level patterning in high density SRAM circuits (Invited), Michael Guillorn, Josephine Chang, Sebastian Engelmann, David Klaus, James Bucchignano, James Tornello, William Graham, Nicholas Fuller and Ernst Kratschmer, IBM TJ Watson Research Center

Double exposure, double etch (DE2) patterning deconvolves patterns into a 1D grating pattern and a 2D customization pattern. This creates the opportunity to choose a different lithography for each of the exposures.  In this work, we investigate EBL as for grating customization of gate-level patterns in high density SRAM circuits.

6A-2
Grating Based Lithography (Special Session)

Sub-20nm Hybrid Lithography enabled by Highly Regular Layout,Pitch Division, and e-Beam Exposure  (Invited), Michael Smayling and David Lam, Multibeam

A path to 7nm CMOS using hybrid patterning appears feasible, with some issues for nodes beyond 16nm. The hybrid concept combines four existing technologies:  circuits designed with highly regular layout, optical lithography for “lines” at pitches of >80nm, spacer-based pitch division, and e-beam-based lithography for “cuts” and holes. 

6A-3
Grating Based Lithography (Special Session)

An all-optical process for extending GRATE to the 11nm (20nm hp) Technology Node (Invited), Rudi Hendel, John Petersen, David Markle, Alex Raub, Robert Greenway, Periodic Structures, Inc

 

6A-4
Grating Based Lithography (Special Session)

Optical lithography method for generation of sub-35nm line/space patterns for use in complementary lithography, Harun Solak, Christian Dais and Francis Clube, Eulitha AG

A simple mask-based proximity optical lithography method is described that can print sub-35nm line/space patterns with illumination from an ArF laser at a wavelength of 193nm. Rigorous optical simulations show the attainment of high contrast images that have effectively unlimited depth of focus over a wide range of mask pattern parameters.

6A-5
Grating Based Lithography (Special Session)

Vibrational Indentation Patterning of Grating Structures with Real-time Period Tunability, Se Hyun Ahn, Jong G. Ok, Moon Kyu Kwak and L. Jay Guo, University of Michigan

We introduce a highly versatile and low-cost nanopatterning process, Dynamic Nano-Cutting (DNC), to create micro- and nano-scale gratings on various materials by high-speed vibrational indentations, which can be easily extended to continuous roll processing.

6B-1
Ebeam 2

Liquid phase electron beam induced deposition of CdS, M. Bresin, N. Reddy, V. Singh and J. T. Hastings, University of Kentucky

Liquid phase electron beam induced deposition was used to deposit the semiconductor CdS. The ability to deposit semiconductor materials with site specificity may impact a variety of nanoelectronic and nanophotonic applications, and is particularly exciting given the limited gas phase EBID processes for semiconductor deposition.

6B-2
Ebeam 2

Cold Field, Thermal-Field, and Schottky Emission from HfC(310) Sources, William Mackie, Josh Lovell and Gerald Magera, Applied Physics Technologies

We report on CFE, TFE, and SE cathodes using HfC(310) and operation at temperatures from 300 K to 2000 K.  Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB shows promise for this cathode operating in Schottky emission mode.

6B-3
Ebeam 2

Focused Electron Beam Induced Deposition as novel nanofabrication approach for magnetic nanosensors and nanomagnet logic, Marco Gavagnin, Heinz D. Wanzenboeck, Simon Waid and Emmerich Bertagnolli, Vienna University of Technology - Inst. F. Solid State Electronics

Iron containing nanostructures were obtained by Focused Electron Beam Induced Deposition (FEBID) to produce potential magnetic nanosensors. Furthermore, in this work we have shown how FEBID can be used as novel approach to synthesize nanostructures for spintronics, Hall-probes and nanomagnetic logic devices.

6B-4
Ebeam 2

Low-Energy Electron Diffraction Microscopy Based on a Single-Atom Electron Source, Ing-Shouh Hwang, Mu-Tung Chang, Wei-Tse Chang, Wei-Hao Hsu, Hong-Shi Kuo, Che-Cheng Chang and Tien T. Tsong, Institute of Physics, Academia Sinica

In this presentation, we will show our work on low-energy electron diffraction imaging using fully coherent single-atom electron sources. We will also present a new scheme of a low-energy electron diffraction microscope based on the single-atom electron gun.

6B-5
Ebeam 2

New Technique of Three-Dimensional Nanofabrication in Semiconductors by Using Electron Beam Lithography, Kenji Yamazaki and Hiroshi Yamaguchi, NTT Basic Research Labs.

The authors have devised a 3D nanofabrication technique through a combination of resist coating on vertical side faces, EB writing from multiple directions, and etching parallel to substrate surface. This technique has allowed us to perform fast 3D fabrication in Si with a high resolution and great structural flexibility.

6C-1
Nanostructures & Processing 2

Interferometrically Defined 3D Pyrolyzed-Carbon Sensors, D. Bruce Burckel, Sandia National Labs

Interferometric lithography is used to create 3D ~FCC structures in photoresist. These structures are then converted to amorphous 3D carbon and used as 1) a non-enzymatic glucose sensor, and 2) a SERS substrate with large uniform enhancement factor. Fabrication and characterization of these two sensor platforms is described.

6C-2
Nanostructures & Processing 2

Capped carbon hard mask an innovative route to nanoscale device fabrication, Sébastien Pauliac-Vaujour, Pierre Brianceau and Corinne Comboroure*, CEA, LETI, MINATEC Campus, *ST Microelectronics

Capped amorphous carbon hard mask is an efficient and low cost technique in order to carry out sub-20nm structures. By using hybrid lithography (e-beam/DUV) and carbon hard mask trimming, we have demonstrated that it was possible to perform 7nm MOS transistor gates on 8inch wafers

6C-3
Nanostructures & Processing 2

Fabrication of Nano-scale, High Throughput, High Aspect Ratio Freestanding Gratings, Alexander Bruccoleri, Pran Mukherjee, Ralf Heilmann, Jonathan Yam, Mark Schattenburg and Frank DiPiazza, MIT Space Nanotechnology Lab

This submission describes the fabrication process for ultra-high aspect ratio freestanding gratings. The pitch of the gratings is 200 nm, and the depth is 4 microns with open areas on the order of 50%, and several square centimeters in area.

6C-4
Nanostructures & Processing 2

Taming of Ga droplets on DLC layers – Size tuning and local arrangement with nm accuracy, Peter Philipp, Lothar Bischoff and Bernd Schmidt, Helmholtz-Zentrum Dresden-Rossendorf

A novel method for the fabrication of spherical gallium nanoparticles with high accuracy in diameter and lateral position is presented. The basic principle is focused ion beam implantation of gallium in a diamond-like carbon substrate and subsequent annealing. Segregation of Ga leads to nano spheres on the DLC surface.

6C-5
Nanostructures & Processing 2

The three-dimensional nanostructure fabrication from HSQ by FIB/EB dual-beam lithography, Reo Kometani, Kouhei Kuroda, Shin'ichi Warisawa and Sunao Ishihara, University of Tokyo

In this study, processing properties of dual-beam lithography using focused-ion-beam (FIB) and electron-beam (EB) were examined to achieve the precisive 3-D nanostructures. And the various 3-D nanostructure fabrications from the hydrogen silsesquioxane (HSQ) resist were demonstrated by using FIB/EB dual-beam lithography.

7A-1
NanoPhotonics 1

Plasmonics At The Single-Nanometer Scale  (Invited), Joel Yang, Huigao Duan, Karthik Kumar, Michel Bosman, Antonio Fernandez-Dominguez* and Stefan Maier*, IMRE, *Imperial College

Plasmonics allows light to be confined into sub-diffraction-limited volumes. Here we show how the plasmon resonances in two metal nanoprisms evolve as we bring them close-to and at the point of contact.

7A-2
NanoPhotonics 1

Hyperspectral NanoPhoto Luminescence Spectroscopy on InP Nanowires by Means of “Campanile” Tips, Mauro Melli, Wei Bao, Patrick Bennett*, Jeff Bokor*, D. Frank Ogletree, P. James Schuck, Stefano Cabrini, Francesca Intonti**, Francesco Riboli**, Diederik Wiersma** and Alexander Weber-Bargioni, Molecular Foundry, Lawrence Berkeley National Laboratory, *Electrical Engineering and Computer Science Department, University of California at Berkeley, **European Laboratory for Non-Linear Spectroscopy

We developed a novel geometry which are bell tower like “campanile” tips at the end of an optical fiber that works like an optical transformer. This structure allows exciting and collecting through the optical fiber with high efficiency. We demonstrated its functionality by mapping the photoluminescence of the InP nanowires.

7A-3
NanoPhotonics 1

New Nanoplasmonic Devices and Fabrication for Large Enhancement and Tunability of Second Harmonic Light Generation, Wei Ding, Liangcheng Zhou and Stephen Y. Chou, Princeton University

We demonstrate a novel nanoplasmonic device with high SHG enhancement of 76 fold , high tunability (7 % per volt), and wide tuning range (up to 280 %). Furthermore, we demonstrate that SHG tuning of our device is caused only by the change of second order susceptibility through charge injection.

7A-4
NanoPhotonics 1

Towards the holy grail of near field optics via reproducibly fabricated optical nano antennae on Scanning Probe Tips, Wei Bao, Mauro Melli, Francesca Intonti*, Francesco Riboli*, Diederik Wiersma*, Frank Ogletree, Jim Schuck, Stefano Cabrini and Alexander Weber-Bargioni, Lawrence Berkeley National Laboratory, *European Laboratory for Non-Linear Spectroscopy,

We review the latest developments of next generation Near Field Optical Probes that were developed in our group and elsewhere, which are based on optical nano antennae. These next generation tips were made possible by highly reproducible fabrication techniques and will give unprecedented insights into optical properties of matter.

7A-5
NanoPhotonics 1

30 nm nanochannels with plasmonic bowtie nanoantenna, Irene Fernandez-Cuesta, Scott Dhuey, Deirdre Olynick, Daniel Gargas, P. James Schuck and Stefano Cabrini, The Molecular Foundry, LBNL

We present the fabrication and characterization of fluidic devices with 30nm nanochannels, integrated with plasmonic bowtie-nanoantenna. Details about the wafer-scale fabrication process as well as the results from the device characterization will be shown. Two-photon photoluminescence measurements, that reveal a 9000x intensity enhancement for 35nm gap antenna, will be explained.

7B-1
NanoBiology

Arrays of Topographically and Peptide-Functionalized Hydrogels for Analysis of Biomimetic Extracellular Matrix Properties  (Invited), Michelle J. Wilson, Bernardo Yanez-Soto, Sara J. Liliensiek and Paul F. Nealey, Univ of Wisconsin

Fabrication of arrays of topographically and peptide-functionalized hydrogels allow for the systematic study of multiple instructive cues (peptides, peptide concentration, topographic dimensions)on epithelial cell behavior for the development of synthetic biomimetic extracellular matrix.

7B-2
NanoBiology

Electron-beam Patterned PEG Microgels for DNA Detection, Xiaoguang Dai, Wei Yang*, Emre Firlar, Salvatore Marras* and Matthew Libera, Stevens Institute of Technology, *Public Health Research Institute

On silicon wafer, electron beam is used to pattern biotin-PEG microgels to which molecular beacons probes are immobilized via biotin-streptavidin binding. Monte Carlo simulations show that the crosslinking density caused by e-beam is non-uniform and gradually approaches zero at the microgel-water interface, retaining the high performance of microgel-tethered molcular beacons.

7B-3
NanoBiology

Sub-micron scale gold-tipped elastomeric pillar arrays for human T cell activation and culture, Saba Ghassemi, Roddy O'Connor, Alexander Gondarenko*, Shalom Wind*, James Hone* and Michael Milone, University of Pennsylvania, *Columbia University

Gold-tipped sub-micron pillars are fabricated to determine the impact of substrate stiffness on the activation of T cells. Pillar tips are selectively functionalized with a self-assembled monolayer of thiol presenting biotin end groups. Stimulatory ligands are then immobilized on pillars through biotin-streptavidin interaction, providing an interface for T cell activation.

7B-5
NanoBiology

Vacuum-packaged Resonant Thermal Sensor for Biological Cell in liquid (MNC Paper), Naoki Inomata, Masaya Toda, Takahito Ono, Tohoku University, Japan

 

7C-1
Nanoelectronics

Strain Assisted Self Lift-Off Process for the Fabrication Ultra Low Capacitive Antenna Coupled MIM Tunnel Diodes for the Application of Infrared Detection and Energy Harvesting, Filiz Yesilkoy, Neil Goldsman, Mario Dagenais and Martin Peckerar, UMD

A new process called "strain assisted lift-off" is developed for the fabrication of Antenna Coupled Metal-Insulator-Metal Tunnel Diodes. This process decreases the junction capacitance while keeping the resistance low. Also, the tunnel barrier is engineered to provide a substantial nonlinearity in the I-V relation by implanting traps. This ultra-low capacitive, highly nonlinear and asymetric rectennas promise efficient IR detection.

7C-2
NanNanoelectronics

Combining SIMS with GPA of aberration corrected HAADF STEM images for measurement of misfit strain in epitaxial SiGe layers, John Bruley, Marinus Hopstaken and Hong He, IBM

Nanoscale mapping of strain in Si and SiGe alloys is of interest since strains less than one percent are being engineered into devices to enable the performance-scaling roadmap.  Geometric Phase Analysis of aberration corrected high-angle annular-dark field STEM images is used to measure 0.1% lattice strain at nanometer length scale.

7C-3
Nanoelectronics

Horizontal Growth of Silicon Nanowire Arrays for Large-Scale Circuit Applications, Chookiat Tansarawiput, Sung Hwan Chung, Yi Xuan, Leo T. Varghese, Lin Zhao, Xianfan Xu, Chen Yang and Minghao Qi, Purdue University

We demonstrated horizontal silicon nanowire array grown from gold catalyst dots patterned on 80nm-thick silicon sidewalls. Our nanowires simultaneously meet three requirements: horizontal growth, controlled position and orientation, and growth on an insulator which are suitable for large scale integration.

7C-4
Nanoelectronics

Magneto-optical and X-ray microscopy of nanomagnetic logic components with shape-induced biaxial anisotropy, Brian Lambson, Zheng Gu, David Carlton, Jeffrey Bokor, Scott Dhuey*, Andreas Scholl*, Andrew Doran* and Anthony Young*, University of California, Berkeley, *Lawrence Berkeley National Laboratory

A new approach to implementing nanomagnetic logic with biaxial anisotropy is conceived and demonstrated. Magneto-optical and X-ray imaging techniques verify the unique dynamic behavior of our devices, indicating improvements in speed and reliability compared to conventional approaches to nanomagnetic logic.

7C-5
Nanoelectronics

Electron Beam Lithography of Antidot Arrays for the Fabrication of Nanogenerators and Detectors in 2DEG Materials, TJ Beck, Raghu Murali, Isabelle Bisotto*, Ethirajulu Kannan* and Jean -Claude Portal*, Georgia Institute of Technology, *CNRS, Grenoble France

Nanogenerators and detectors based on the ratchet effect are fabricated in Si/SiGe heterostructures using electron beam lithography and plasma etching. These photovoltaic devices have great potential for use as microwave detectors, nanogenerators, and other wireless communication devices.

8A-1
NanoPhotonics 2

Potential modulation by plasmonic sub-micron structures for the manipulation of ultracold atomic gas clouds, Monika Fleischer, Dieter P. Kern, Christian Stehle*, Helmar Bender*, Claus Zimmermann* and Sebastian Slama*, Institute for Applied Physics, Eberhard Karls University, *Physical Institute, Eberhard Karls University

In a hybrid plasmonic – Bose-Einstein-condensate (BEC) configuration, sub-micron gold structures are combined with ultracold rubidium gas clouds. The localized near-field potentials connected with surface plasmon polaritons offer interesting possibilities for the manipulation of BECs. The lithographic fabrication is presented together with results of the interaction between BECs and plasmonic potentials.

8A-2
NanoPhotonics 2

Giant and Uniform Fluorescence Enhancement of Organic Dye by 3D Plasmonic NanoCavity Array, Weihua Zhang, Fei Ding and Stephen Y. Chou, Princeton University

We report a new plasmonic nanostructure -- the disk-coupled dots-on-pillar antenna array (D2PA) -- which exhibits an unprecedented high fluorescence enhancement of an IR dye indocyanine green (ICG):  3,000-fold enhancement for an area average with an excellent uniformity, and 4E6-fold for a single dye molecule at a "hot spot".

8A-3
NanoPhotonics 2

Fabrication of Photonic Devices on Flexible Platform, Li Fan, Leo Varghese, Yi Xuan, Ben Niu, Jian Wang and Minghao Qi, Purdue University

We demonstrated a process to fabricate silicon photonic devices directly on a plastic film which is both flexible and transparent. Waveguides, vertical grating couplers, and microring resonators are fabricated and optically characterized. This process allows the integration of complex structures on plastic films directly.

8A-4
NanoPhotonics 2

Significant Enhancement of Colloidal Quantum Dots Fluorescence by 3D Disk-dot Coupled Nanoantenna Array, Hao Chen, Weihua Zhang, Yuxuan Wang, Liangcheng Zhou and Stephen Chou, Princeton University

We demonstrated a 255-fold fluorescence enhancement from QDs using a novel plasmonic nanocavity substrate, D2PA. Such enhancement is uniform over a large sample area and over a wide QD concentration range. This study opens the door towards a wider range of applications, such as quantum information, biosensor and quantum dot laser.

8A-5
NanoPhotonics 2

Fabrication of High Resolution Digital Spectrometers-on-Chip, Christophe Peroz, Sergey Babin, Scott Dhuey*, Stefano Cabrini*, Alexander Goltsov**, Igor Ivonin**, Alexandr Koshelev** and Vladimir Yankov**, aBeam Technologies, Inc., *LBNL, **Nano-Optic Devices

Approach of digital planar holography (DPH) was used to design a new class of spectrometers-on-chips.  Fabrication and measurement results are reported here. Silicon germanium and silicon nitride waveguide cores were utilized. Spectrometers with a) ultra-high spectral resolution and b) broad wavelength range were fabricated and measured.

8B-1
Self-Assembly 1

Directed Self-Assembly for the Semiconductor Industry (Invited), H.-S. Philip Wong, Christopher Bencher*, He Yi, Xin-Yu Bao* and Li-Wen Chang**, Stanford University, *Applied Materials, Inc., **Zilinx, Inc.

Directed self-assembly (DSA) and the use of topography to direct the self-assembly (graphoepitaxy) have shown great potential in overcoming the current lithography limits. In this paper, we review recent progress in using block copolymer directed self-assembly for patterning sub-20 nm contact holes for practical circuits.

8B-2
Self-Assembly 1

Templating Three-Dimensional Self-Assembled Structures in Bilayer Block Copolymer Films, Amir Tavakkoli K. G., Kevin W. Gotrik, Adam F. Hannon, Alfredo Alexander-Katz, Caroline A. Ross and Karl K. Berggren, Massachusetts Institute of Technology

This study shows that a BCP film consisting of a bilayer of cylindrical microdomains self-assembled on a majority-block brush-coated template can form a wide range of complicated three-dimensional  structures. We show that this method can independently and simultaneously control the orientation of cylindrical microdomains in each layer.

8B-3
Self-Assembly 1

Directed Assembly of Symmetric ABA Triblock Copolymers on Chemically Nanopatterned Substrates, Shengxiang Ji, Umang Nagpal*, Guoliang Liu*, Sean Delcambre*, Marcus Müller**, Juan de Pablo* and Paul Nealey*, Changchun Institute of Applied Chemistry, *Dept. of Chemical and Biological Engineering, University of Wisconsin, **Institut für Theoretische Physik, Georg-August Universität

We report the first study on directed assembly of ABA triblock copolymers on chemical patterns. When Ls is incommensurate with Lo, the triblock copolymer domains can equilibrate with dimensions up to ~55% larger or 13% smaller compared to Lo.

8B-4
Self-Assembly 1

Complex self-assembled patterns from a square grid template with restricted geometry, Jae-Byum Chang, Hong Kyoon Choi, Adam F. Hannon, Caroline A. Ross and Karl K. Berggren, MIT

Here, we demonstrate complex pattern fabrication using a topographic template consisting of a square lattice with a restricted set of geometrical features. We used double-dot posts to control the orientation of PDMS microdomains, and developed rules for predicting a final pattern from a given template arrays.

8B-5
Self-Assembly 1

Sub-20 nm fabrication on polyimide plastics enabled by directed self-assembly, Li Tao, Hsiao-Yu Chang, Kevin Gotrik*, Jeong Gon Son*, Caroline A. Ross* and Deji Akinwande, University of Texas at Austin, *Massachusetts Institute of Technology

This submission demonstrated solvent-assisted directed self-assembly of 17 nm gratings on a plastic substrate.  Such fabrication has rarely been reported because of thermal constrains and surface roughness of plastics for conventional self-assembly. It holds great potential to enable novel nano- materials or devices for engaging directed self-assembly with plastic/flexible substrates.

8C-1
Electron or Ion Sources & Systems

X-rays and field-emission gun: an intrinsic quasi-monochromatic X-ray source  (Invited), Vu Thien Binh and Babacar Diop, Univ of Lyon 1

Quasi-monochromatic soft x-ray source is obtained by privileging electron-excited characteristic L radiations and by the use of carbon nanopearl field emission cathodes. Using Mo as counter anode, a peak centered at 2.35 keV presented a monochromaticity between 75 to 55% and a FWHM value of ~0.4 keV.

8C-2
Electron or Ion Sources & Systems

Stable Field Emission from Nanoporous Silicon Carbide Tips Patterned by a Focused Ion Beam(Invited), H.J. Lezec, R.L. Kallaher, Fred Sharifi , M.-G. Kang*, NIST, *UMD

 

8C-3
Electron or Ion Sources & Systems

Energy Spread Measurement of an Electron Impact Gas Ion Source Equipped with a Miniaturized Gas Chamber, David Jun and Pieter Kruit, Delft University of Technology

We present energy spread measurements of a new gas ion source.  The experimental results show that the energy spread can be controlled by the gas chamber bias voltage and the shape of the energy spread profile depends on the gas chamber apertures alignment, the gas pressure and the lensing effect created by the apertures.

8C-4
Electron or Ion Sources & Systems

Reproducibility of Drift Tolerant Focused Ion Beam Lithography Method, R. Møller-Nilsen, D. H. Petersen, A. Savenko and P. Bøggild, Dept. of Micro- and Nanotechnology, Technical University of Denmark

We demonstrate the application of a drift-tolerant conformal FIB prototyping strategy for the fabrication of micro four-point probes with L-shaped cantilevers. Using two standard commercial dual-beam systems the repeatability is discussed, as well as the reproducibility of feature dimensions depending on the neighbouring geometry.

8C-5
Electron or Ion Sources & Systems

Patterning nitrogen-vacancy color centers in diamond using scanning focused helium ion beam, Wen-Di Li, Zhihong Huang, Charles Santori, Wei Wu and R. Stanley Williams, Hewlett-Packard Labs

We demonstrate the application of the helium ion microscope in creating nitrogen-vacancy centers in diamond for quantum devices. Arbitrary patterns of N-V centers with high spatial resolution and accurate placement can be directly written by the focused helium ion beam. 

9A-1
Nanostructured Solar Cells (Special Session)

Nanowire device concepts for thin film photovoltaics  (Invited), silke christiansen, Max-Planck for the Science of Light

Nanowire device concepts for thin film photovoltaics  Controlled realization of silicon nanowires (SiNWs) on glass for photovoltaic applications will be reported. Modelling, numerical simulations and experimental results of optical and electrical properties and integrated solar cell performance of only 2µm long SiNWs will be shown with efficiencies >10%.

9A-2
Nanostructured Solar Cells (Special Session)

Controlling Nanostructures in Organic Photovoltaic Cells (Invited), Hui Joon Park and L. Jay Guo, Univ of Michigan

Controlling the nanoscale interface between electron donor and acceptor is critical to overcome the limitation due to the short exciton diffusion length in organic semiconductors. We present approaches for achieving ordered nanostructures by nanoimprinting conjugated polymers, and improved nano-morphology in bulk heterojunction and bilayer OPVs using a new fabrication process.

9A-3
Nanostructured Solar Cells (Special Session)

Nanoimprinted Polymer Solar Cell, Walter Hu, University of Texas at Dallas

Nanoimprint lithography (NIL) has emerged as a new approach to make nanostructured organic solar cells. NIL can simultaneously control both the heterojunction morphology and polymer chain alignment to enhance device performance. This talk will review the recent progress in this area.

9A-4
Nanostructured Solar Cells (Special Session)

Solar Electron Source and Thermionic Solar Cell, Parham Yaghoobi, Mehran Vahdani Moghaddam and Alireza Nojeh, University of British Columbia

A fundamental challenge in solar thermionic electricity generation is heating the cathode to thermionic emission temperatures. We report the first compact thermionic solar cell. The key is an unusual Heat Trap effect in carbon nanotubes, enabling efficient heating in a way that cannot be achieved in bulk conductors.

9A-5
Nanostructured Solar Cells (Special Session)

Via-Hole Fabrication for III-V Triple-Junction Solar Cells, Yuning Zhao, Patrick Fay, Andree Wibowo*, Jianhong Liu* and Chris Youtsey*, University of Notre Dame, *MicroLink Devices, Inc.

A three-step etching process for via-hole fabrication in advanced triple-junction III-V solar cells is demonstrated. The etching process includes two steps of Cl2/Ar inductively coupled plasma reactive ion etching and a selective wet etch to form vias with excellent sidewall anisotropy and etch morphology. The process enables fabrication of backside contact photovoltaic cells for improved efficiency.

9B-1
Self Assembly 2

A Molecular View of Block Copolymer Directed Assembly and its Application to Sub-Lithographic Patterning (Invited), Juan de Pablo, Univ of Wisconsin

A new molecular-level formalism is used to investigate morphology formation in block copolymers on nanopatterned substrates. The model is used to interpret experiments for a wide variety of materials and processes.

9B-2
Self Assembly 2

Directed Self-Assembly of Perpendicularly Oriented Nano-Cylinders with Liquid Crystalline Block Copolymer, Hiroshi Yoshida, Yasuhiko Tada, Kouhei Aida, Motonori Komura* and Tomokazu Iyoda*, Hitachi Research Laboratory, Hitachi Ltd., *Chemical Resources Laboratory, Tokyo Institute of Technology

Directed self-assembly with density multiplication of perpendicularly oriented cylindrical microdomain with lattice spacing of 17 nm was demonstrated applying liquid crystalline side-chain block copolymer. Perpendicular orientation was promoted by homeotropic alignment of liquid crystalline moieties, which provides robustness of DSA process and enhances its resolution for next generation nano-devices fabrication.

9B-3
Self Assembly 2

3D Capillary Force Assembly : Fabrication of a white light emitter, Julien CORDEIRO, Olivier LECARME, Guilherme OSVALDO DIAS and David PEYRADE, LTM-CNRS

This presentation will highlight the Capillary Force Assembly technology of fluorescent nanoparticles to create 3D deterministic Particles Superstructures (PS). Excited in the UV range, those PS can be considered as a "White Light" source. Performances of the light emitters will be discussed. Finally, applications in integrated optics will be proposed.

9B-4
Self Assembly 2

Templated Placement of Colloidal Quantum Dots, Vitor Manfrinato, Darcy Wanger, David Strasfeld, Francesco Marsili, Hee-Sun Han, Lihua Zhang*, Dong Su*, Jose Arrieta, Eric Stach*, Moungi Bawendi and Karl Berggren, MIT, *Brookhaven National Lab

Here we present the placement of colloidal quantum dots (QDs) through electron-beam lithography. We fabricated QD clusters with average of 3 QDs in each cluster. We performed confocal photoluminescence to demonstrate the optical quality of the placed QDs.

9B-5
Self Assembly 2

Directed assembly of one-dimensional functional nanostructures, Erika Penzo, Matteo Palma, Risheng Wang and Shalom Wind, Columbia University

We describe an approach toward the assembly of functional 1D nanostructures on patterned surfaces. 1D double-crossover DNA motifs and fixed-length carbon nanotube segments are chemically and/or biochemically bound to nanodot anchors formed by nanoimprint lithography. This approach is an important step toward the creation of complex functional nanoarchitectures.

9C-1
MEMs/NEMs

CMOS Compatible RF MEMs Technology (Invited), Stephen Luce and Anthony Stamper, IBM

 

9C-2
MEMs/NEMs

Atomic Layer Deposition Encapsulation of Carbon Nanotubes with Al2O3, Max Shulaker, J Provine, Roger Howe and Subhasish Mitra, Stanford University

The need to protect CNTs for further processing has been reported, but a study of the quality of protection has not been undertaken.  To that end, we have explored Atomic Layer Deposition (ALD) as a method to encapsulate CNTs in order to protect them from future processing steps.

9C-3
MEMs/NEMs

Piezoelectrically Transduced Silicon Carbide MEMS Double-Clamped Beam Resonators, Boris Sviličić, Enrico Mastropaolo*, Tao Chen* and Rebecca Cheung*, University of Rijeka, *University of Edinburgh

We report on the design, fabrication and testing of piezoelectrically transduced 3C-SiC double-clamped beam MEMS resonant devices. The influence of the DC bias voltage, electrode and beam dimensions on the resonant frequency, including the impact of the DC voltage on the linearity of the frequency response, is investigated.

9C-4
MEMs/NEMs

Quality factor improvement of graphene resonator by SU-8 shrinkage-induced strain, Yuta Oshidari, Taiki Hatakeyama, Reo Kometani, Shin'ichi Warisawa and Sunao Ishihara, University of Tokyo

We fabricated graphene mechanical resonators using mechanical exfoliation and focused-ion-beam (FIB) technique. Moreover, we improved the quality factor of graphene resonators by SU-8 shrinkage-induced tensile strain. In this experiment, the quality factor improved about 7 times higher for the best sample by applying tensile strain.

9C-5
MEMs/NEMs

Combined SIMS-SPM instrument for high sensitivity and high resolution elemental 3D analysis, Tom Wirtz, Yves Fleming, Urs Gysin*, Thilo Glatzel*, Ernst Meyer*, Urs Maier** and Urs Wegmann**, Centre de Recherche Public - Gabriel Lippmann, *University of Basel, **Ferrovac

We have developed for the first time an integrated SIMS-SPM instrument. This instrument involves an in-situ combination of sequential high resolution Scanning Probe Microscopy (SPM) and high sensitivity Secondary Ion Mass Spectrometry (SIMS). High-sensitivity high-resolution chemical 3D reconstructions become possible with this extremely powerful analytical tool.

10A-1
Nonconventional Electron & Ion Sources

Electron emission from carbon nanotubes, S. R. P. Silva*, Advanced Technology Institute, University of Surrey, United Kingdom

 

10A-2
Nonconventional Electron & Ion Sources

Nanoscale Photoelectron Emission Using C-shaped Nanoapertures with Cesium Bromide Photocathode, Yao-Te Cheng, Juan R. Maldonado*, Yuzuru Takashima**, Chuong Huynh***, Larry Scipioni***, Lambertus Hesselink and R. Fabian Pease, Stanford University, *SLAC National Accelerator Laboratory, **University of Arizona, ***CarlZeiss NTS, Inc.

We experimentally demonstrated photoemission of 20 nm photoelectron sources using 20 nm characteristic size C-shaped nanoapertures.  The apertures were fabricated with focused helium ion beam milling in a 90 nm aluminum film and covered with a 10 nm CsBr photocathode.  This technique can be used for multiple electron beam lithography.

10A-3
Nonconventional Electron & Ion Sources

Progress Towards a Commercial Neon Gas Field Ion Source, FHM Rahman, Sybren Sijbrandij, Louis Farkas, Randal Percival and John Notte, Carl Zeiss Microscopy

Significant efforts are underway to achieve a high brightness neon ion source suitable for nano-scale fabrication.  This paper provides an overview of the challenges and the progress already made.

10A-4
Nonconventional Electron & Ion Sources

Visualization of Ion Beams from IonicLiquid Ion Sources for Focused Ion Beam Applications, C. Perez-Martinez and P. Lozano,  MIT, Cambridge, MA

 

10B-1
Self Assembly 3

Sub-30 nm pitch circuit relevant patterning in Si, SiO2 and SiN using directed self assembly based pattern generation  (Invited), Hsin-Yu Tsai, Sebastian Engelmann, Hiroyuki Miyazoe, Michael Guillorn, Chi-Chun Liu* and Joy Cheng*, IBM T Watson Research Center, *IBM Almaden Research Center

Line-space pattern generation using directed self-assembly (DSA) of block copolymers combines lamellae forming self-assembling materials with lithographically defined template patterns to produce a grating-like pattern. We present a systematic study of the DSA pattern generation process including templating and pattern transfer for circuit relevant patterning in multiple substrate materials.

10B-2
Self Assembly 3

Directed Patterning for Electronics Using Multiple Block Copolymers Orthogonally, Wei Min Chan, Sandip Tiwari, Evan Schwartz and Christopher Ober, Cornell Univesity

We demonstrate a technique to achieve self-assembly of two different geometries on the same layer using orthogonal processing. Our method reduces the inherent trade-off between resolution and available geometries using block copolymer self-assembly. This is important since electronics requires precise patterns as well as other shapes.

10B-3
Self Assembly 3

Sub-10 nm area-selective ALD using block copolymer lithography, Deirdre Olynick, Nobuya Hiroshiba, Zuwei Liu*, Thomas Lehmann, Dominik Stenger, Scott Dhuey, Bruce Harteneck, Stefano Cabrini and Adam Schwartzberg, Lawrence Berkeley National Laboratory, *Oxford Instruments

Sub-10 nm selective ALD of hafnia has been achieved on patterned brushes.  PDMS and PS brushes were patterned using block copolymer lithography. PDMS domains were patterned at 20 nm pitch at sizes ~ 10 nm. As PDMS resists hafnia deposition, the hafnia deposited only on the areas without PDMS.

10B-4
Self Assembly 3

Electron Beam Lithography by Using Self-Assembled Block Copolymer Thin Films as Positive/Negative Tone Combined Resist, Hiroyuki Suzuki, Reo Kometani, Sunao Ishihara and Shin'ichi Warisawa, University of Tokyo

In this paper, we used polystyrene-block-poly(methyl methacrylate) thin films as resist for electron beam lithography. Polystyrene is a negative tone resist, and poly(methyl methacrylate) is a positive tone resist. Therefore, we fabricated nanoporous structures only in the exposed areas whose minimum size was about 100 nm×100 nm.

10B-5
Self Assembly 3

Design Space for One-hole Pattern using Block Copolymer Directed Self-Assembly, He Yi, Xin-Yu Bao*, Christopher Bencher*, Huixiong Dai*, Yongmei Chen* and H.-S. Philip Wong, Stanford University, *Applied Materials, Inc.

Block Copolymer Directed Self-Assembly (DSA) is a potential sublithographic patterning solution with low cost and high throughput. We demonstrate the control of DSA using small topographical templates and the design space for one-hole cylindrical pattern.It is shown that DSA pattern formation can be controlled by adjusting template size, density and the block copolymer film thickness.

10C-1
Microfluidics

Microfluidics Beyond Basic Biology- From Fertility Monitoring to Artificial Respiration (Invited), Todd Thorsen, MIT Lincoln Laboratory

The increasing complexity of laboratory biological and chemical protocols drives the need for highly integrated parallel microfluidic architectures. Addressing this need, microfluidic design elements are discussed, with a particular emphasis on scalability and automation.

10C-2
Microfluidics

Fabrication and Characterization of Field Effect Reconfigurable Nanofluidic Ionic Diodes: Building Blocks Towards Digitally-Programmed Manipulation of Biomolecules, Weihua Guan, Rong Fan* and Mark Reed**, Department of Electrical Engineering, Yale University, *Department of Biomedical Engineering, Yale University, **Department of Electrical Engineering and Applied Physics, Yale University

Nanofluidic diodes are utilized for rectification of ionic transport, but their rectifying properties cannot be altered after the devices are made. Here, a field effect reconfigurable nanofluidic diode is reported where the forward direction as well as the degree of rectification can be easily modulated by gating voltage.

10C-3
Microfluidics

Electrically Controlled Switchable Adhesion of Dual Nanometer and Micrometer Structured Surfaces, Shaun Berry, Theodore Fedynyshyn, Lalitha Parameswaran and Alberto Cabral, MIT Lincoln Laboratory

We demonstrate the ability to reversibly switch between a superhydrophobic Cassie state and a hydrophilic Wenzel state on textured surfaces containing artificially fabricated structures of micro-scale and superimposed nano-scale features. The wetting state was switched from a Cassie state to a Wenzel state by an external electrical stimulus.

10C-4
Microfluidics

High Aspect Ratio, Triangular Silicon Pillars for Bump Array Concentration of Pathogenic Bacteria, Keith Morton, Maxence Mounier, Liviu Clime, Xuyen Hoa, Christian Luebbert*, Nathalie Corneau*, Teodor Veres, Sabah Bidawid* and Jeff Farber*, National Research Council Canada, *Health Canada

Using precision deep silicon etching along with oxidation narrowing we demonstrate on-chip bump array concentration of rod-shaped pathogenic bacteria species that have increasing importance for applications in rapid diagnostics.

10C-5
Microfluidics

Fabrication of On-Chip Fluidic Ion Channels using Self-Aligned Double Layer Resist Processing Technique, Bongho Kim, Jihun Kwon, Daehong Kim, Sungwoo Chun, Hyungyu Lee, Seonjun Choi and Seung-Back Lee, Hanyang University

Here, we report on a new method to fabricate on-chip fluidic channels with electrostatically controllable nano-valves acting as Fluidics channels. We have fabricated 10 nm diameter nano-valves using a self-aligned double layer resist patterning process.

 

POSTER SESSION

10:30 am – 12:00 pm | 1:30 pm – 2:30 pm
Queens Ballroom and Kona Promenade

 

3DIC-enabled Nanofabrication

P01-01

Monolithic 3D Integration via Al-Ge Bonding of Single Crystal Islands (Invited), Filip Crnogorac, Ryan Birringer, Reinhold Dauskardt and Fabian Pease, Stanford University

Demonstration of attachment of Si(100) and Ge(100) crystal islands onto amorphous SiO2 substrate using Al-Ge eutectic (435°C) and sub-eutectic (400°C) bonding and SmartCut release.

P01-02

Transfer Processes of Silicon Nanomembranes for Three Dimensional Integration of Photonics and Electronics, J Provine, Filip Crnogorac*, David Kwong**, Ray Chen**, Fabian Pease, Stanford University, *Centrillion Biosciences, **University of Texas, Austin

We have tested various types of silicon nanomembranes to achieve low loss optical transmission. The selected starter material for silicon nanomembranes will now be used for 3D integration of lightwave circuits based on a layer transfer free of ion-cut to avoid losses that come from the roughness from ion implant.

P01-03

Fabrication of an 18-layer 3D Woodpile Photonic Crystal via Stacking of Pre-Patterned Free-Standing Membranes, Chunghun Lee, Yi Xuan, Leo Varghese, Li Fan and Minghao Qi, Purdue University

We developed new fabrication of the 18 layer silicone woodpile photonic crystals. This fabrication process is faster, simpler and more cost effective than previous 3D PhCs methods, making it ideal for the fabrication of a variety of optical, chemical, and electronic devices

 

Carbon Nanotubes & Graphene

P02-01

Bio-Fuel Cell Operational Enhancements using Nanoscale Electrodes, Alokik Kanwal, Shiunchin Wang*, Ross Cohen, Shanmugamurthy Lakshmanan, Gordon Thomas, Zafar Iqbal and Reginald Farrow, New Jersey Institute of Technology, *Carbomet LLC

Bio fuel cells have tremendous potential as an alternative energy solution, but have been plague with poor performance compared to more conventional technologies due to internal losses. Here we present the effects on a bio fuel cell performance by moving to the nanoscale, namely the reduction of internal losses.

P02-02

Diameter Dependence of the Effect of Light Polarization on Interband Transitions in Zigzag Carbon Nanotubes, Saloome Motavas, Andre Ivanov and Alireza Nojeh, University of British Columbia

It is generally understood that a carbon nanotube does not absorb light polarized perpendicular to its axis well, due to the so-called depolarization effect. However, another important effect, that of polarization on interband transitions, paints a different picture. This is the subject of this paper.

P02-03

Two-photon Photoemission from Carbon Nanotube Arrays under Low-power Ultraviolet Illumination, Mehran Vahdani Moghaddam, Parham Yaghoobi, Alireza Nojeh, University of British Columbia

Multi-photon photoemission from bulk cathodes is typically observed under the high intensities afforded by pulsed lasers. We report on one- and two-photon photoemission from a carbon nanotube array, a nanostructured photocathode, induced by a continuous-wave, ultra-violet laser beam with a power of only a few milliwatts.

P02-04

The Effect of Field Frequency and Solution Conductivity on Dielectrophoretic Deposition of Carbon Nanotubes, Ali Kashefian Naieni and Alireza Nojeh, University of British Columbia

Dielectrophoresis is an effective carbon nanotube deposition method. We show that small changes in surfactant concentration and thus the conductivity of the nanotube solution, as well as the frequency of the applied field, can drastically alter the morphology of the deposited nanotube devices.

P02-05

Di-block Copolymer Guided Patterning of Graphene, Duyoung Choi, Cihan Kuru, Chulmin Choi, Kunbae Noh*, Sungho Jin, University of California, *Cheil Industries Uiwang R&D Center

The block copolymer lithography of patterned graphene layer is a scalable approach and can enable a continuous semiconducting graphene thin film for fabrication of integrated devices to meet specific circuit requirements. We demonstrate successful fabrications of ordered nanopore patterns directed on a graphene substrate by patterned block copolymer.

P02-06

Optimization the visibility of graphene on poly-Si film by thin-film optics engineering, Tao Chen and Rebecca Cheung, School of Engineering, Institute for Micro and Nano Systems The University of Edinburgh

An optimization of the visibility of graphene on poly-si substrate is reported, by engineering the multilayer substrate.

P02-07

Strain characteristics of free-standing graphene induced by low-energy electron beam irradiation, Takuya Kadowaki, Ryuichi Ueki, Takuya Nishijima and Jun-ichi Fujita, University of Tsukuba

We observed that low-energy electron beam irradiation during the lithography process severely damages graphene, where decreases and shifts of the Raman spectrum G peak coincided with the appearance of the D peak, which was induced under an electron dosage of 2 mC cm-2 at an electron energy of 1 keV.

P02-08

Micro- and Nanostructuring of Graphene on various Substrates using UV-NIL, Iris Bergmair, Wolfgang Hackl, Andreas Rank, Michael Muehlberger, Maria Losurdo*, Maria Giangregorio*, Giovanni Bruno*, Christian Helgert**, Thomas Pertsch**, Ernst-Bernhard Kley** and Thomas Mueller***, Functional Surfaces and Nanostructures, PROFACTOR GmbH, *Institute of Inorganic Methodologies and of Plasmas-CNR, **Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, ***Institute of Photonics, Vienna University of Technology

In this work we demonstrate the micro- and nanostructuring of graphene using UV-based Nanoimprint Lithography on nickel, copper or silica substrates. Exfoliated and chemical vapor deposited graphene was used to demonstrate that our technique is suitable for large-area patterning (1 x 1 cm²) with feature sizes down to 20 nm.

P02-09

High quality factors in graphene and ultra thin Silicon nitride nanomechanical drums, vivekananda adiga, Rob Barton, Chris Wallin, Harold Craighead, Rob Ilic and Jeevak Parpia, Cornell University

We have measured high quality factors in large graphene (Q = 5000, 70um diameter) and ultra thin (15 nm) silicon nitride (Q = 4,000000, 700um diameter) nanomechanical drums. These findings pave the way for identifying optimum size of resonators for achieving low mass, high Q oscillators for optomechanical experiments.

P02-10

Molecular dynamics study on structural modifications of graphene by electron beam irradiation, Yoshiki Asayama, Yoshinori Chihara, Masaaki Yasuda, Hiroaki Kawata and Yoshihiko Hirai, Osaka Prefecture University

Molecular dynamics study on the structural modification of graphene with electron beam is performed. The electron-irradiation effect is introduced based on the binary collision theory using the elastic collision cross section. The patterning of graphene such as cutting with electron beam is demonstrated with the simulation.

 

Directed Self Assembly & Self Assembly

P03-01

Production of sub-20nm Pitch Features from Directed Self Assembly of High Chi Polymers via a Selective Block Removal Process Utilizing Atomic Layer Deposition (Invited), Nathan Jarnagin, Andrew Peters and Clifford Henderson, Georgia Tech

This paper will present and discuss a novel and general approach for achieving selective block removal in high chi block copolymers useful for sub-20nm pitch directed self assembly that is based on area selective atomic layer deposition of oxide onto the hydrophilic block of such polymers followed by plasma etching.

P03-02

Electric Field Induced Patterning in Computational Lithography, Sang-Kon Kim, Hanyang University

The electro field induced lithography, a bottom-up method, is a popular and promising implementation technology due to its capability to generate a variety of pattern structures even without a pre-patterned mask. In this paper, by using the molecular simulation and the Navier-Stokes equation, the electro-hydrodynamic instability are described in alignment of lamellar block copolymers and electro-hydrodynamic driven nanopatterning.

P03-03

Control of the PS-b-PDMS directed self-assembly by silsesquioxane-based graphoepitaxial substrate engineering, Mathieu Salaün, Marc Zelsmann, Olivier Lorret*, Bernt Diettert*, Dipu Borah**, Barbara Kosmala** and Mick Morris**, Laboratoire des Technologies de la Microélectronique, LTM, CNRS-CEA/LETI-UJF, *Functional Surfaces and Nanostructures, Profactor GmbH, **University College Cork, Chemistry Department

In this work, we present results on directed self-assembly of PS-b-PDMS performed on pre-patterned SilSesQioxane (SSQ) based substrates. Either vertical or horizontal orientations of the PDMS cylinders could be obtained in these templates by solvent annealing with a remarkable long-range order. Tuning the configuration allows to get all 3 orientations.

P03-04

Image quality and pattern transfer in block copolymer directed assembly with block-selective atomic layer deposition, Ricardo Ruiz, Lei Wan, Jeffrey Lille, Kanaiyalal C. Patel, Elizabeth Dobisz, Danvers E. Johnston* and Charles T. Black*, Hitachi Global Storage Technologies Inc., *Brookhaven National Laboratory

We apply block-selective atomic layer deposition in block copolymer films to selectively harden PMMA domains with 13 nm critical dimension in aligned, self-assembled lamellar phase PS-b-PMMA block copolymer films. We evaluate the chemically selective growth parameters that influence the pattern fidelity as well as the performance of the infiltrated material as an etch mask.

P03-05

Investigation of Templated Self-assembly of High-χ Diblock Copolymer, Samuel Nicaise, Karl Berggren, Russell Goodman*, Richard Kingsborough*, Theodore Fedynyshyn*, William Farnham**, Hoang Tran** and Michael Sheehan***, Massachusetts Institute of Technology, *MIT Lincoln Laboratory, **E.I. DuPont de Nemours and Company, ***DuPont Electronic Polymers, LP

We synthesized and tested annealing parameters of a new high-χ BCP system composed of surface-energy-dissimilar blocks. We investigated the directed self-assembly of this BCP system with different HSQ-post templates and film thicknesses. It was determined that both of the blocks are nearly equally attracted to the templating-post features.

P03-06

Block Copolymer Self-Assembly Using Sacrificial Template, Amir Tavakkoli K. G., Sam M. Nicaise, Kevin W. Gotrik, Adam F. Hannon, Caroline A. Ross and Karl K. Berggren

We solved the problem of nonuniformity in the final pattern of physical templating by using a sacrificial template. The sacrificial template was removed along with the etchable-block during the etching; so it does not form part of the final pattern and therefore differences in etch rates are not an issue.

P03-07

Molecular Transfer Printing Using Silicon Membrane for the Fabrication of Large Area Chemical Patterns on Highly Flexible Substrates, Lei Wan, Paul Nealey, Hongyi Mi and Zhengqiang Ma, University of Wisconsin

Here, we present a method that combining ultrathin silicon membrane and molecular transfer printing (MTP) to fabricate large-area chemical patterns on a flexible substrate.

P03-08

Directed Self-assembly with Density Multiplication of 6 tera-dot/in2 Pattern by POSS-Containing Block Copolymer, Yasuhiko Tada, Hiroshi Yoshida, Yoshihito Ishida*, Haruka Mikami*, Mizuki Sato*, Ricardo Ruiz**, Elizabeth Dobisz**, Teruaki Hayakawa*, Mikihito Takenaka, Hirokazu Hasegawa, Kyoto University, *Tokyo Institute of Technology, **Hitachi Global Storage Technologies

We demonstrated directed self-assembly with density multiplication of 6 tera-dot/in2 by strongly segregating POSS containing diblock copolymer (diBCP). Well-defined patterns were obtained by adjusting the diffusion and the segregation strength of the diBCP in annealing process. For ultra high density pattern, thermal annealing was more appropriate than solvent annealing.

P03-09

Spin on Glass as an Orientation Control Layer for Block Copolymer Direct Self-Assembly, Hiroko Nakamura, Satoshi Mikoshiba, Atsushi Hieno, Koji Asakawa, Toshiba Corporation

The film of SOG synthesized by a sol-gel method from methyltrimethoxysilane was confirmed to serve as an orientation control layer for BCP DSA. Low-cost guided BCP patterning can be expected because the SOG can also be used as a BARC in tri-layer resist process and a pattern transfer layer.

P03-10

Defect Evolution in Thin Films of Self-Assembling Lamella Forming Block Copolymers on a Neutral Surface, Gurdaman Khaira, Marco Bedolla, Paul Nealey, Juan de Pablo, Prabu Ravindran, Nicola Ferrier, University of Wisconsin-Madison

P03-11

Super selective silicon cryo-etching for nanoscale pattern transfer with block copolymer lithogrpahy, Zuwei Liu, Scott Dhuey, Bruce Harteneck, Stefano Cabrini, Deirdre Olynick, Xiaodan Gu*, Thomas Russell*, Lawrence Berkeley National Lab, *University of Massachusetts Amherst

Pattern transfer into silicon with cylinder shaped PS mask created by block copolymer (PS-PVP) lithography with features sizes of 20 nm, using super selective cryo-etching.

P03-12

Achieving Ordered Nanoholes and Other Non-bulk Morphologies by Directed Self-Assembly of a Block Copolymer, Amir Tavakkoli K. G., Sam M. Nicaise, Adam F. Hannon, Kevin W. Gotrik, Caroline A. Ross and Karl K. Berggren, Massachusetts Institute of Technology

In this study, we showed that by using an array of majority-block functionalized posts, we generated multiple morphologies on a single substrate instead of the cylindrical diBCP morphology expected in bulk. We used three-dimensional self-consistent field theory simulations to predict the formation of different morphologies.

P03-15

Probing Nanostructures of Aged Active Layer Materials for Organic Solar Cells, Muruganathan Ramanathan, Michael S Kilbey II, Jose Alonzo Calderon, Oak Ridge National Laboratory

In this presentation, we will show the aging effects of thermal and thermal-light cycled OPV active materials that are deposited on various substrates. A comparison of bilayer versus bulk heterojunction active layers in presence of compatibilizers will also be discussed in detail.

P03-16

Directed Self-Assembled Porous Anodic Alumina by NanoImprinting Lithography, Therese Gorisse, Ludovic Dupré, Pascal Gentile, Marc Zelsmann*, Mickael Martin*, Denis Buttard, CEA-Grenoble/INAC/SiNaPS-MINATEC, *CNRS/UJF-Grenoble1/CEA LTM

We present an innovative route including Thermal NanoImprint Lithography prior to aluminum anodization, to prepare flawless hexagonal arrays on large surfaces. In addition, original structures with generation of guided pores have been successfully developed; recent results will be presented as well as better understanding of the mechanisms.

P03-17

Metal Nanoparticle Arrays by Controlled Decomposition of Polymer Particles, Daniel Brodoceanu, Christina Huber, Anne Wonn, Philip Born, Elmar Kroner, Tobias Kraus, Cheng Fang*, Nico Voelcker*, Matthias Karg**, INM-Leibniz Institute for New Materials, *Flinders University, **University of Bayreuth

We report on efficient fabrication methods for ordered metal nanoparticles by exploiting the uniform geometry of polymer beads that we deposit as close-packed monolayers via convective assembly. In contrast to “colloidal lithography” that applies particles as masks, we use controlled etching of the particles to define metal structures.

P03-18

Placement error study of cylindrical phase self-assembly guided by graphoepitaxy, Sander Wuister, Tamara Druzhinina, Jo Finders and Eddy van der Heijden, ASML

We have studied the influence of the trench width on the lithographic performance of contact holes obtained from the use of the self-assembled block co-polymer. Control over the block copolymer pitch across the trench is obtained.

 

Electron Beams

P04-01

Thermionic Electron Gun with Small Virtual Source Size for Electron Beam Lithography Applications (Invited), Paul Tesch, Noel Smith, Noel Martin and Bud Magera*, Oregon Physics, *Applied Physics Technologies

A novel electron gun utilizing an embedded thermionic emitter has been developed that has small virtual source size and uniform angular intensity. These properties are useful for illuminating the programmable aperture arrays used in maskless electron beam lithography systems.

P04-02

Concentric Ring Metal-Dielectric Structures for Surface Electromagnetic Wave Assisted Compact Photoelectron Source (Invited), Heon Choi, Timothy Groves and Ravi Bonam, University at Albany-CNSE

A novel photoelectron source that can be integrated into a parallel array is proposed. The source is comprised of surface structures that excite surface electromagnetic waves, which localize and enhance the incident optical power, and deliver it to a photoelectron emitting material.

P04-03

Calculation of high order aberrations of practical multi-pole type electron optical aberration correctors using a differential algebraic method, Yongfeng Kang, Jingyi Zhao and Tiantong Tang, Xi'an Jiaotong University

A differential algebraic (DA) method for practical multi-pole correctors is presented; the mixed geometrical and chromatic aberrations of practical multi-pole aberration correctors up to 5th orders are calculated using the DA method and the electron optical performances of the corrector are evaluated in very high accuracy.

P04-04

Variation of Proximity Effect Correction Parameters with Density, David Czaplewski and Leonidas Ocola, Center for Nanoscale Materials, Argonne National Laboratory

we present measurements of proximity effect correction parameters for several materials and have found an inverse relationship with density that can be used to predict PEC parameters for any material with a known density such as complex oxides, II-VI or III-V materials, and multilayer heterostructures.

P04-05

Magnetic reversal of iron nanowires deposited by Focused Electron Beam Induced Deposition for nanomagnet logic application, Marco Gavagnin, Heinz D. Wanzenboeck, Simon Waid and Emmerich Bertagnolli, Vienna University of Technology - Inst. f. Solid State Electronics

In this work focused electron beam induced deposition has been used to synthesize nanowires under different scanning conditions. Their magnetic properties will be investigated and discussed focusing on the magnetic reversal behaviour that these nanosystems are showing for possible application in magnetic recording technology.

P04-06

Fabrication of high resolution computer-generated holograms using 3D electron beam lithography., Joanna Szymanska, Fay Hudson, Elfi Van Zeijl, Daniel Barry*, Masa Takatsuka*, Hiroshi Yoshikawa**, Paula Dawson*** and Andrew Dzurak, Australian National Fabrication Facility – NSW Node (ANFF-NSW), University of New South Wales, *ViSLAB, The School of IT, University of Sydney, **Nihon University, Dept Elect & Comp Sci, ***College of Fine Arts, University of New South Wales

Development of 3D electron beam lithography process using MicroChem low contrast PMMA A50 resist and Raith 150 TWO EBL system to fabricate a high resolution hologram fringe pattern.

P04-07

A Mechanism for Dendritic Nano-Pillar Growth using EBID, James Bishop, Richard Crendal, Jared Cullen, Charlene Lobo, Michael Ford, Matthew Phillips and Milos Toth, University of Technology, Sydney

A new EBID precursor decomposition pathway is identified and ascribed to thermal decomposition of Si(OC2H5)4 caused by beam heating of nanostructures. It was explored by varying the substrate temperature, beam current, and by mixing the growth precursor with an oxidising agent that alters deposit purity, thermal conductivity and growth kinetics.

P04-08

Electron Beam Etching Kinetics of Diamond and Graphite, Aiden Martin, Matthew Phillips and Milos Toth, University of Technology, Sydney

H2O-mediated electron beam induced etching (EBIE) of diamond and graphite were investigated and found to exhibit different etch rates. The results are explained by the effects of bond structure on EBIE efficiency and used to interpret results in literature on heterogeneous etching and surface roughening observed during EBIE.

P04-09

High aspect ratio (~25:1) sub-10 nm HSQ lines using electron beam lithography, Muhammad Mirza, Haiping Zhou, Kevin Docherty, Douglas Paul, Stephen Thoms and Douglas Macintyre, University of Glasgow

This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.

P04-10

High Aspect Ratio Features in PMGI using Electron Beam Lithography and Solvent Developers, Golnaz Karbasian, Alexei Orlov, Patrick Fay, Huili Xing, Debdeep Jena and Gregory Snider, Univ. of Notre Dame

We present a high contrast electron-beam lithography process using Polydimethylglutarimide (PMGI) as a resist. The key feature of this process is development by a weak solvent, Xylenes, commonly used to develop ZEP. We obtained a contrast of about 36, five times higher than the reported contrast in PMGI and PMMA.

P04-11

High-Speed Patterning of Hexagonal Dot Arrays Using Electron-Beam Lithography, Bryan Cord, Hans Romijn and Marc Wijnands

We have developed a novel method of designing and fracturing pattern files that allows hexagonal arrays of dots to be patterned very quickly via e-beam lithography. The system works with most EBL systems, and has been shown to increase throughput of dense arrays by up to two orders of magnitude.

P04-12

Long Narrow Gaps for III-V Transistors Fabricated by Electron Beam Lithography, Stephen Thoms and Douglas Macintyre, University of Glasgow

In this paper we investigate a number of techniques to fabricate long, narrow gaps of around 100 nm between 100 um square metallic pads. This structure is not easy to fabricate by conventional methods, and a number of different techniques to fabricate such structures by lift-off are investigated and compared.

P04-13

An Enhanced E-beam Pattern Writing for Nano-Optics Based on Character Projection, Ernst - Bernhard Kley, Friedrich-Schiller-University Jena

We implemented a character projection system with more than 2000 character apertures for increasing the writing speed of a Vistec SB350 OS variable shape beam e-beam writer up to a factor >1000. This benefit was been used for making elements feasible and for improving the pattern quality.

P04-14

Optimization of Spatial Dose Distribution for Vertical Sidewall of Resist Profile Minimizing Total Dose in Electron-beam Lithography, Q. Dai, S.-Y. Lee, S.-H. Lee*, B.-G. Kim*, H.-K. Cho*, Auburn University, *Samsung

In this study, an efficient dose optimization scheme which does not require a direct resist-development simulation while achieving a target 3-D resist profile with a minimal total dose has been developed.

P04-15

Computer Modeling of the Schottky Electron Source, G.A. Schwind, L.W. Swanson and S. Kellogg, FEI Company

A combination of computer modeling and experimental data was used to develop a method to predict all critial electron source parameters from a simple current-voltage data set for Schottky emitters. Method could be extende to all field emission type electron sources.

P04-16

Electron Beam Direct Write of Chalcogenide Glass Integrated Optics, Galen Hoffman, Ronald Reano, Ohio State University

Electron beam induced deformations are explored for realizing optical waveguides in GeSe chalcogenide glass thin films. The approach is an etch-less technique that potentially allows waveguides whose surface roughness is limited only by the roughness of the as-deposited film. Consequently, surface roughness scattering loss may be reduced.

P04-17

Sculpting Electron Beam Profile and Phase with Nanofabricated Diffractive Optics, Benjamin McMorran, Tyler Harvey, Jonathan Perry-Houts*, Stefano Cabrini*, Amit Agrawal**, Henri Lezec**, University of Oregon, *Berkeley National Lab, **National Institute of Standards and Technology

Nanofabricated electron diffractive optics can be used to engineer both the wavefront and intensity profile of electron beams in conventional TEMs. To illustrate this, here we demonstrate generation of Gaussian electron beams with phase vortices in a TEM.

P04-18

Periodic tilted Au structure fabrication by electron beam exposure, Jian Zhang, Babak Shokouhi, Bo Cui, University of Waterloo

In this work, tilted nano-hole array was fabricated by SEM scanning of ZEP-520A with dynamic focus to main focus across the imaging area on the tilted wafer. Then tilted nano-pillar array was created by electroplating Au into the hole array, with a uniform size across ~1 mm^2.

P04-19

Electron beam lithography using dry thermal development, Celal Con and Bo Cui, University of Waterloo

Polystyrene is a negative electron beam resist that undergoes cross-linking upon exposure to e-beam. In this study thermal development of polystyrene is realized because exposed thus cross-linked polystyrene evaporates due to thermal decomposition at a slower rate than unexposed polystyrene. Line array pattern with line-width of ~50 nm was obtained.

P04-20

Dose to clear in EBL: comparison of Monte Carlo predictions with experiment, Bengt Nilsson, Chalmers University of Technology

The point-spread function (PSF) generated by montecarlo-simulation for proximity correction can be numerically integrated, giving a number which is related to the required large area exposure dose received by the resist. If calibrated for one material, e.g Si, the dose for other materials can be predicted.

P04-21

Electron beam lithography with evaporated resist, Jian Zhang, Bo Cui, University of Waterloo

Spin-coating method in e-beam lithography can form films only on flat surfaces. Here, we introduced thermal evaporation to deposit a uniform polystyrene film on substrate for patterning. Half pitch is achieved at 30 nm. An array of letters with line-width of 28 nm was successfully patterned on an AFM tip

 

Emerging Technologies

P05-01

Electron impact gas ion source development; evaluation of different electron injection sources (Invited), Nannan Liu, Jeroen Anton van Kan, David Jun*, Cornelis W. Hagen* and Pieter Kruit*, CIBA, Physics, NUS, *Charged Particle Optics Group,

Theoretical evaluation of conventional electron emitters as injector for an electron impact gas ion source will be presented. We will compare tungsten hair-pin, LaB6 and Schottky electron sources with hydrogen gas for 10 nm to 10 μm aperture sizes and 100 nm to 1 μm ionization path length.

P05-02

Deposition and Characterization of Platinum Wires Deposited by a Neon Gas Field Ion Source, Lewis Stern, David Ferranti, Humeng Wu, John Notte, Larry Scipioni, Thompson William, Philip Rack* and Mike Phaneuf**, Carl Zeiss NTS LLC, * University of Tennesee, **Fibics Incorporated

Using a Neon source and metallic precursors we deposit 125nm nanowires with a resistivity of 900 micro-ohm-cm. We discuss methods and processes for obtaining Neon and Helium results. We discuss the challenges of determining resistivity for small structures and present characterization data showing similar behaviors for Tungsten and Platinum wires.

P05-03

Tip shaping of gas field ion sources for optimal ion beam generation, Jason Pitters, Radovan Urban* and Robert Wolkow*, NRC-NINT, *University of Alberta

Single atom tips are prepared from W(111) to be used as gas field ion sources. A procedure to evaluate and control the final atomic structure as well as the global tip shape is introduced in order to optimize the emitted helium ion beam.

P05-04

Progress Towards An Aberration-Corrected Low Energy Electron Microscope for DNA Sequencing and Surface Analysis, Marian Mankos, Alpha N’Diaye*, Andreas Schmid*, Henrik Persson**, Khashadyar Shadman and Ron Davis**, Electron Optica, *LBNL, **Stanford University,

We analyze the performance of key electron-optical components needed to establish the feasibility of monochromatic, aberration-corrected, dual-beam low energy electron microscopy, a novel technique aimed at imaging DNA sequences. We present experimental results of characterizing DNA molecules on Au substrates using a spin-polarized LEEM and AFM.

P05-05

Continuous roller photolithography and application to large area IR metamaterial fabrication, Moon Kyu Kwak, Jong G. Ok* and L. Jay Guo*, Kyungpook National University, *University of Michigan

In this research, Continuous roller photolithography was developed for continuous fabrication process. As an application, IR metamaterial in the form of metal-insulator-metal (MIM) structure was acheived.

P05-06

Stencil-nanopatterned back reflector increases efficiency of thin-film solar cells, Veronica Savu, Céline Pahud, Mona Klein*, Oscar Vazquez-Mena**, Franz-Josef Haug, Christophe Ballif, Juergen Brugger, EPFL, *IBM, **Berkeley University,

Nanopatterned back reflectors increase the efficiency of amorphous-Si solar cells. Stencil lithography, a parallel and scalable nanopatterning technique, is integrated here for the first time with solar cell fabrication. Ag nanodots deposited through stencils on flat back reflectors increase the solar cell efficiency at 670 nm up to 2.5 times.

P05-07

Stability and degradation of organic photovoltaic devices fabricated, aged, and characterized by the ISOS 3 inter-laboratory collaboration, David Tanenbaum, Martin Hermenau*, Eszter Voroshazi**, Matthew Lloyd***, Yulia Galagan^, Birger Zimmermann^^, Markus Hösel^^^, Henrik Dam*^^^, Mikkel Jørgensen^^^, Suren Gevorgyan^^^, Laurence Lutsen+, Dirk Vanderzande+, Agnès Rivaton++, Gülşah Uzunoğlu+++, Uli Würfel<, Monica Lira-Cantu<<, Roland Rösch<<<, Harald Hoppe<<<, Kion Norrman^^^ and Frederik Krebs^^^, Pomona College, USA, *IAPP, Dresden, **imec, Leuven, ***NREL, USA, ^HOLST, Eindhoven, ^^Fraunhofer ISE, Freiburg, ^^^DTU, Roskilde, +Hasselt Univ Diepenbeek, Belgium, ++LPMM, Aubière, +++TÜBİTAK, Kocaeli, <Fraunhofer ISE, Freiburg, <<CIN2, Barcelona, <<<Ilmenau University

Organic photovoltaic devices were prepared in a collaboration planned at ISOS-3. Post soaking analytical measurements enable comparison at various stages in the degradation. We present fabrication details, benefits and challenges associated with the unprecedented size of the collaboration, characterization protocols, and results on devices aged in the three illumination conditions.

P05-08

Imprint-Templated Nanocoaxial Array Architecture, Binod Rizal, Michelle Archibald, Jeffrey R. Naughton, Michael J. Burns, Stephen Shepard, Gregory McMahon, Thomas C. Chiles and Michael J. Naughton, Boston College

We have fabricated nanocoaxial and nanotriaxial arrays with wide potential utility, as molecular-scale biological and chemical sensors, high density neuroelectronic interfaces and retinal prostheses, radial junction solar cells, supercapacitors, and optical metastructures. We report on their fabrication, which starts with NIL-templated nanopillar arrays, and initial utilization in these areas.

 

Extreme UV Lithography

P06-01

Optical Performance of Binary Mask with a Tantalum Telluride Absorber Layer for Extreme Ultraviolet Lithography (Invited), Hee Young Kang, Pazhanisami Peranantham, Chang Kwon Hwangbo, Hwan-Seok Seo* and Seong-Su Kim*, Inha University, *Samsung Electronics Co., Ltd.,

In this study, we proposed TaTe2 as a new absorber material for EUVL mask. The optical constants of TaTe2 films at 13.5-nm are calculated by using XRR and RBS. We simulated and fabricated the BIMs with TaTe2 layers with various thicknesses on [Mo/Si] mirror to study their optical performance in the EUV range.

P06-02

Residual-type mask defect printability for EUV lithography, Tsuyoshi Amano, Susumu Iida, Ryoichi Hirano, Tsuneo Terasawa, Hidehiro Watanabe and Yuichi Inazuki*, EUVL Infrastructure Development Center, Inc., *Dai Nippon Printing Co., Ltd.

The programed residual-type defects were fabricated on EUV mask and their thicknesses were 2, 4, 8, 16, 33 and 66 nm. The exposure result showed that the 2 nm in height of the residual bridge defect causes more than 10 % CD error at outer focus range.

P06-03

Dependence of Image Characteristics Dependece on Incident Electron Beam Energy for EUV Mask inspection using Monte Carlo simulation, Susumu Iida, Tsuyoshi Amano, Ryoichi Hirano, Tsuneo Terasawa and Hidehiro Watanabe, EUVL Infrastructure Development Center, Inc.

Detection of bridge defect in 88-nm hp LS patterns was simulated. 3-nm-thick bridge defect was identified by using projection electron beams with landing energy of 0, 5, 250 and 1000 eV. And heights of the defects were identified by controlling the incident beam energy.

P06-04

Image Compensation of Mask Misalignment in Aerial Image Microscope System, Min-Chul Park, Young Min Jhon and Yong Tae Kim, KIST (Korea Institute of Science and Technology)

In this paper we propose a method of image compensation for mask misalignment to obtain a corrected phase difference.We developed an image processing software to compensate the differences, and they can be compensated by changing the measured phase difference until to observe the same phase difference between the light intensities.

P06-05

Modeling of defect transport in EUVL plasma chambers, Alex Likhanskii, Chuandong Zhou, Peter Stoltz, Vibhu Jindal*, Patrick Kearney*, Arun John*, Tech-X Corporation, *SEMATECH

We will present the results of detailed modeling of defect transport in EUVL plasma chambers using Tech-X's code plasma VORPAL. We will describe the physics of the defect transport from target to the mask and will discuss potential ways to reduce number of defects, hitting the mask.

P06-06

Direct nano-structuring of solid surface by extreme ultraviolet Ar8+ laser, Karel Kolacek, Jaroslav Straus, Jiri Schmidt, Olexandr Frolov, Vaclav Prukner, Radek Melich, Andrei Choukourov*, Jaroslav Sobota** and Tomas Fort**, IPP AS CR, *MFF UK, **ISI AS CR

It is described not only the interaction of extreme ultraviolet radiation of various fluences with solid surface (the desorption regime as well as the ablation one can be distinguished), but also a nano-structuring of this surface digging out by this radiation 2D diffraction pattern created in windows of covering grid.

P06-07

Understanding the sources of unwanted etch in ion beam sputter deposition production of EUV mask blanks, Patrick Kearney, Vibhu Jindal, Alin Antohe, Frank Goodwin, Al Weaver, Pat Teora, John Sporre, David Ruzic, Peter Stoltz, Alex Likhanskii and Chuandong Zhou

EUV lithography requires defect free masks. Defects in these IBSD masks are caused by beam interactions with the chamber shielding. We have investigated and optimized the ion beam using etch plates, pinhole camera imaging, and a retarding field analyzer. Simulations including charge exchange have been performed to explain the results.

 

Focused Ion Beams

P07-01

Focused Ion Beam Implantation of Li+ in WO3 Using A Magneto-Optical Trap Ion Source (Invited), Brenton Knuffman, Adam Steele, J. Brent Allen, Dmitri Ruzmentov, Alec Talin and Jabez McClelland, NIST

A magneto-optical trap ion source produces a focused ion beam of Li+ ions. The Li+ ions are implanted at 2keV in a WO3 thin film. Optical and electrical changes are observed in the implanted film. This work demonstrates a new way to pattern subwavelength optical structures and electrical devices.

P07-02

Surface-Finishing of Focused Ion Beam Milled Features by Pulsed Electron Irradiation, Nikola Vladov, James Murray, Adam Clare, Joel Segal and Svetan Ratchev, University of Nottingham

A novel finishing process is proposed for improving the surface quality of FIB machined features. Using broad-beam pulsed electron irradiation, surface roughness of FIB milled trenches in polycrystalline materials can be reduced from nearly 50um Ra value to below 30um.

P07-03

Modeling for Multi-Beam Ion Imaging and Analysis, David Joy and Ranjan Ramachandra, University of Tennessee

In scanning ion microscopy several different ions can be employed. Simulations show how at a given energy the choice of ion affects the beam range, the form of the interaction volume, the yield of secondary electrons and ions, and the sputter damage to the, so providing u samplenique experimental flexibility.

P07-04

A Mass Filtered Plasma FIB, Charles Otis, Anthony Graupera, FEI Company

We report on the characteristics of a new mass filtered RF plasma based FIB system. A compact Wien filter is used as the mass separator. The characteristics of ion beams (ion composition, energy spread, reduced brightness) that result from relevant gaseous mixtures will be presented.

P07-05

A Quantitative Probe Current Distribution Characterization Technique for Focused Ion Beam, Shida Tan, Richard Livengood, Yuval Greenzweig, Yariv Drezner, Darryl Shima, Intel Corporation

Characterizing a FIB probe current profile is complex due to the non-Gaussian current distribution common in most ion beams. A quantitative technique for measuring the current distribution profile through sub-surface TEM analysis has been developed. The principals behind this technique and modeling and empirical data will be presented.

P07-06

Fabrication of Sealed Nano-channels Based on Sacrificial Nanotemplates by Focused-ion-beam Induced Chemical Vapor Deposition, Ajuan Cui, Wuxia Li, Qiang Luo, Zhe Liu, Junjie Li, Changzhi Gu, Chinese Academy of Sciences

A technique to create sealed nanochannel networks is developed based on the phenomenal that nanowires will disappear after the deposition of tungsten by focused ion beam induced deposition with W(CO)6 as a precursor. The size of the nano-channels can by controlled precisely.

P07-07

Focused-Ion-Beam Introduced Bidirectional Bending for Complex Three-Dimensional Structures, Can Li, Zonggang Xu, Wengang Wu, Jun Xu, Peking University

We report for the first time the phenomenon that aluminum cantilever can be controlled to bend downward or upward under Ga+ focused-ion-beam (FIB) irradiation. The phenomenon is employed as an approach to assemble complex three-dimensional (3D) micro/nano-scale structures including helixes with different chiralities, clockwork springs, “tubes”, serrate structures, etc.

P07-08

A Large-Aperture Ion-Beam Lens Corrected For Both Chromatic And Spherical Aberration, Frederick Martin, Nanobeam Corporation

Measurements of lens aberrations are described. The lens used comprises an achromatic quadrupole doublet capable of focusing 5 keV gallium ions, with a 16-pole plate located between the quadrupoles. Major parasitic aberrations are nulled, resulting in simultaneous chromatic and spherical correction over an aperture of 0.25mm x 1.00 mm in a low-energy system with a working distance of 14 cm.

P07-09

Helium ion beam lithography of thick HSQ resists, Paul Alkemade, Anja van Langen-Suurling, Emile van der Drift, Emile van Veldhoven* and Diederik Maas*, Delft University of Technology, *TNO Delft

We study the resist thickness dependence of helium ion beam lithography. We found that thicker HSQ resists require higher dose. Furthermore, the width of the structures increases with depth. In case of underexposure, structures detach from the substrate, due to an insufficient density of energy deposition at larger depths.

 

Mask and Maskless Lithography

P08-01

Study of nanospheres lithography technology with super-lens for fabricating nano holes, Li shuhong, Du jinglei and Houi yidong, Sichuan University

We proposed a maskless nano lithography method based on super-lens imaging of silver slab. We have studied on the effect of several important factors. For different PS sphere, the optimal thickness of Ag film and the highest resolution are given. Nano holes with dimension of 75nm were fabricated.

P08-02

Polymeric freestanding structures by direct write laser without sacrificial layers, Víctor J. Cadarso, Karl Pfeiffer*, Ute Ostrzinski*, Jean-Baptiste Bureau, Georges-Andre Racine, Anja Voigt*, Gabi Gruetzner* and Jürgen Brugger, EPFL, *MRT

In this paper we take into advantage the sensitivity of mr-DWL_5 XP material to wavelengths over 400 nm to yield epoxy-based freestanding micro-structures without additional sacrificial layers. Two different micromechanical structures have been developed as proof of concept of the novel 3D patterning technology: double clamped beams and cantilevers.

P08-03

Thermal control extends heated stencil's life-time, Shenqi Xie, Veronica Savu and Juergen Brugger, EPFL

We present a novel stencil concept which offers an integrated solution to both remaining technical challenges: the clogging of stencil apertures and the gap between stencil and substrate. The latest approach shows how confining the deposition area on the membranes provides them with a 10 fold increase in their life-time.

P08-04

Scanning Probe Nanostructure Direct-Write: Serial and Parallel Patterning via High Field Chemistry, Stephanie Vasko, Hideki Sato, Haoyu Lai, Wenjun Jiang, Scott Dunham, Marco Rolandi, The University of Washington

The biased probe of an atomic force microscope reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures with with deterministic size, geometry, and placement control. Parallel direct-write is demonstrated for large areas of Si and Ge by substituting the AFM probe with conducting microstructured stamps.

 

Metrology and Novel Imaging

P09-01

Electron scattering simulation for subsurface metrology in scanning electron microscope, Nobuhiro Okai and Yasunari Sohda, Hitachi, Ltd.

We clarified a detailed mechanism of electron emissions from a flat sample with subsurface structure under electron beam irradiation by using an electron scattering simulator. Moreover, we found that CD bias and image contrast increases with increasing irradiation energy for tapered pattern, and show that the control of the irradiation energy is necessary for accurate CD measurement.

P09-02

On Clean Samples and High-Resolution Quantitative Charged Particle Microscopy, Andras Vladar, Kavuri Purushotham and Michael Postek, NIST

We are reporting on a new finding: hydrogen or oxygen plasma cleaning followed by several minutes of electron bombardment leads to even better, possibly ultimate sample cleanliness. This means more repeatable quantitative electron and ion microscope measurements and material deposition, higher imaging resolution than otherwise would be possible.

P09-03

Multiple phase-formation in Ni-Ge system monitored by SEM, AFM and PIXE analytical techniques, Rudzani Nemutudi, Carlos Pineda-Vargas, Daniel Chilukusha*, Craig Comrie**, Adriaan Habanyama*, iThemba LABS, *University of Zambia, **University of Cape Town

We present evidence of multiple phases in Ni-Ge system observed using Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM) and Particle Induced X-ray Emission (PIXE. Using an optical mask, we prepare lateral diffusion couples of thick germanium islands on a nickel thin film[1]. Our results show lateral diffusion of excess atoms from germanium islands to the surrounding thin film.

P09-04

Nanoscale imaging, analysis and nano-fabrication using Helium Ion Microscope, David Bell, Harvard University

We will present our results using He ion microscope to image a variety of nanomaterials. The goals of our research is understanding the underlying physics of the image formation, sample/ion interactions and image contrast interpretation. We will also present our results of nanomachining of beam sensitive materials using He ions.

P09-05

Near-Field EUV Imaging for Spatial Frequency Multiplication, Yijian Chen, Yashesh Shroff*, Peking University, *Intel Corp.

Near-field EUV imaging is possible due to its much shorter wavelength to bring Fresnel number into the near-field range. This will enable spatial frequency multiplication by an open-field exposure of an imaging material with patterned absorbers sitting on its top. We present a simulation study of such an EUV imaging technique.

 

Microfluidics

P10-01

Dry-Release Self-assembling of Microtube Arrays for Catalytic Micropump Application, Jinxing Li, Zhaoqian Liu, Gaoshan Huang, Bing-Rui Lu, Yifang Chen*, Yongfeng Mei and Ran Liu, Fudan University, *Rutherford Appleton Laboratory

Here we present a new method to make the predefined stained nanomembranes self-assembled into microtubular pump arrays by a simple thermal induced dry-release process. With a catalytic Pt layer inside, the micropumps can be activated by the catalytic decomposition of peroxide into oxygen microbubbles and water.

P10-02

Bonding of PMMA nanofluidic devices and its effect on DNA behavior in nanochannels, Jiahao Wu, Alborz Amirsadeghi, Bahador Farshchian, Franklin Uba*, Steven Soper*, Jinsoo Kim** and Sunggook Park, Mechanical Engineering Department, Louisiana State University, *Department of Biomedical Engineering, University of North Carolina, **Department of Chemical Engineering, Kyung Hee University

We show fabrication of nanofluidic devices in polymethylmethacrylate (PMMA) via two bonding methods, the effect of the bonding methods on the behavior of DNAs in the devices are also discussed in the paper.

P10-03

A superhydrophobic surface made from hydrophilic materials with micro-umbrella structures, Qian Feng Xu, Bikash Mondal, Zhantong Mao, Alan M. Lyons, George Pat Watson*, City University of New York, *Princeton University

Superhydrophobicity was achieved from a hydrophilic material by constructing an array of micro-umbrella structures on a silicon wafer using tapered polymer deposition and RIE. This structure enables a water droplet to remain in the Cassie-Baxter state throughout the evaporation process, preventing a Wenzel transition as observed on other superhydrophobic surfaces.

P10-04

Electrophoretic and electroosmotic flow through carbon nanotube membranes as chemical pumps, Ji Wu and Bruce Hinds, Univ. KY

Carbon nanotube membranes due to atomically smooth inner cores and large van der Waals distance show remarkable 10,000 fold fluid flow enhancements. This translates to ion induced electrosmotic flow that can be used for a variety of applications from bioseparations to drug delivery.

 

Modeling

P11-01

Molecular simulation of electron-irradiation damages in resist materials (Invited), Masaaki Yasuda, Kosei Araki, Hirofumi Sakai, Hiroaki Kawata and Yoshihiko Hirai, Osaka Prefecture University

Electron-irradiation damages in resist materials are studied with the molecular dynamics simulation. The electron-irradiation effect is modeled based on the binary collision theory. With the increase in the accelerating voltage, more resist atoms are driven out from the irradiated area, but the damaged region becomes smaller.

P11-02

Modeling of Counter Streaming Charged Beams in MICHELLE–eBEAM, Serguei Ovtchinnikov, Simon Cooke*, Masis Mkrtchyan, Roman Shtokhamer, John Petillo, Alexander Vlasov* and Baruch Levush*, SAIC, *NRL

The new approach implemented in MICHELLE-eBEAM is designed to take advantage of GPU hardware acceleration and novel algorithms to efficiently model counter streaming charged particle beams, such as found in high current electron beam lithography, where two beams are co-located in space while propagating in opposite directions.

P11-03

Study of the Interaction of Polymethylmethacrylate Fragments with Methyl Isobutyl Ketone, Mohammad Ali Mohammad, Kolattukudy Poulose Santo*, Steven K. Dew, Maria Stepanova*, University of Alberta, *National Institute for Nanotechnology,

We present a molecular dynamics study of the dissolution of short chain PMMA fragments in MIBK and other developer systems. Using Flory-Huggins theory of polymers, we calculate the fragment-developer interaction parameter and attempt to describe the solubility of PMMA fragments through an in-depth molecular analysis.

P11-04

Charging process simulation of a resist film on Si substrate under electron beam irradiation, Masatoshi Kotera, Akira Osada, Masaru Otani and Yasuhiro Ohara, Osaka Institute of Technology

In the present study, a simulation model is introduced to express a time-dependent charging process of electrically insulating resist on Si substrate under EB irradiation. Not only the surface potential variation with Vacc, but also the tendency of the time constant with Vacc agrees with experimental result.

P11-05

Fast Simulation of Stochastic Exposure Distribution in Electron-beam Lithography, X. Zhao, S.-Y. Lee, S.-H. Lee*, B.-G. Kim*, H.-K. Cho*, Auburn University, *Samsung

In this study, a new method to reduce the number of stochastic PSF's to be generated by several orders of magnitude without sacrificing the accuracy of estimating the exposure fluctuation in the resist has been developed.

 

Nanobiology

P12-01

Polymeric Substrates with Bioimprinted Micro- and Nanoscale Topography for Regulation of Chondrocyte Re-Differentiation, Lynn M. Murray, Volker Nock, Maan M. Alkaisi, Joanne J. M. Lee* and Tim B. F. Woodfield*, The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, *Department of Orthopedic Surgery & Musculoskeletal Medicine, University of Otago

Polymeric substrates can influence attachment, proliferation and gene expression of cells such as chondrocytes. Surface modifications which regulate re-differentiation of expanded chondrocytes are of significant clinical importance to 3D tissue engineering. We demonstrate the use of bioimprint to fabricate polymeric substrates with chondrocyte replicas at various expansion and differentiation stages.

P12-02

The Blood-Brain-Barrier Crossing in vivo using Magnetic Nanocapsules, Seong Deok Kong, Jisook Lee, Chulmin Choi, Jirapon Khamwannah, Brian Eliceiri and Sungho Jin, University of California San Diego

Blood-brain-barrier (BBB) presents a major obstacle to delivering potentially therapeutic agents. Here, fluorescently labeled, magnetic nanocapsules were synthesized and used to demonstrate crossing of BBB in the brain. These studies establish a novel strategy for controlling the pharmacodistribution in the brain through the application of an external magnetic field.

P12-03

Nanometer Size Protein Patterning using nCP for the Investigation of Protein-Protein Interactions in Live Cells, Andreas Rank, Iris Bergmair, Bernd Dittert, Michael Muehlberger, Stefan Sunzenauer* and Gerhard Schuetz**, Functional Surfaces and Nanostructures, Profactor GmbH, *Institute for Biophysics, Johannes Kepler University, **Institute of Applied Physics, Vienna University of Technology

To investigate protein-protein interactions in live cells, subtrates with protein patterns are needed. With µCP protein arrays in the µm range can be achieved. Further reduction of the patterns size would be highly interesting to specifically probe cellular subregions. We were able to create 180nm protein arrays by nanocontact printing.

P12-04

Nanoimprinted Electrodes for Highly Efficient and Stable Bio-Fuel Cells, Richard Sundberg, Dmitry Suyatin, Ivan Maximov, Lars Montelius, Dmitrii Pankratov*, Vladimir Popov* and Sergey Shleev**, Lund University, *Kurchatov NBIC Centre, **Malmö University

In the current work we demonstrate the use of nanoimprint lithography to make highly efficient, stable and flexible electrodes for bio-fuel cells (BFCs), fuel cell utilizing biocatalysts for chemical energy transformation into electrical energy via heterogeneous redox reactions.

P12-05

Screening T-Cell Activation with Nanostructured Substrates, Alexander Gondarenko, Junqiang Hu, James Hone, Erdem Tabdanov, Edward Judokusumo, Lance Kam, Anastasia Liapis and Michael Dustin

Mechanical interaction of cells with the extracellular matrix is one of the basic cellular signaling pathways. Physical forces exerted on a cell tnraslate into biochemical signals and alter cell behavior. We demonstrate a high throughput multi-well plate with micron and submicron pillars on well bottoms to screen effects of pillar geometry on T cell activation.

P12-06

Microfluidic Axon-Isolation Device fabricated by Nanoimprint lithography, Heinz D. Wanzenboeck, Andreas Amon, Johann Mika, Emmerich Bertagnollo, Vienna University of Technology

A microfluidic structure was fabricated from PDMS to investigate axon growth of neuronal networks. This axon-isolation device (AID) is fabricated from a microstructured elastomer created by Nanoimprintlithography. We report on the separate growth of axons small enough to pass these microchannels while the cell soma is excluded. The potential application of this approach for neurobiological investigations is discussed.

P12-07

Nanostructured, Active Electrostatic Trap for Confining Nanometric Objects in a Fluid: mimicking DNA-Protein interactions in a synthetic system, Ashwin Panday, Brandon D. Lucas, Long Chen, L. Jay Guo*, University of Michigan, Ann Arbor, *University of Michigan

The current study, encompasses the first steps in creating synthetic, engineered system that can mimic the biological DNA-Protein interaction using non-biological, charged, 1-d nanostructures using a tunable, spatially modulated electrostatic potential profile near a metal line charge by biasing it against a counter electrode, in an aqueous solution.

P12-08

Micro-nanofabricated platform technology for cell seeding experiments in neuro-nanobiology, Regina Luttge, University of Twente/MESA+ Institute for Nanotechnology

Pioneering neuroscience research utilizes micro-nanotechnology. The exact definition of cell seeding environments and tuning of scaffold properties for dissociated primary neurons remains a challenge. By means of a PDMS soft lithography, a micro-nanofabricated silicon template is applied to provide for a new cell culture platform technology, here introduced for experiments in neuro-nanobiology.

 

Nanoelectronics

P13-01

Experimental Investigation on the Short Channel Effect of Nano-Imprinted Organic Field Effect Transistors (Invited), Lichao Teng, Robert Kirchner, Matthias Plötner, Andreas Jahn, Alexander Türke, Jian He, Yang Ge, Falk Hagemann* and Wolf-Joachim Fischer, Technische Universität Dresden, *SAW Components GmbH

P-type P3HT organic field effect transistors (OFETs) with 500 nm channel were fabricated by UV-Nano-imprint lithography. To improve the saturation ability of short channel OFETs, many different techniques were applied experimentally. Finally, the regular ordered P3HT-molecules and a thin insulator layer inhibit the short channel effect of OFETs.

P13-02

Employing Nano Imprint to Fabricate Space-Charge-Limited Transistors (SCLTs), Lon Wang, Yang-Kai Wu, Hsiao-Wen Zan*, Hsin-Fei Meng*, Jian-Hao Huang* and Wu-Wei Tsai*, National Taiwan University, **National Chiao Tung University

In summary, the first successful use of interference lithography and nano-imprint technology to fabricate SCLT is demonstrated.

 

MEMs/NEMs, Nanomechanics & Nanometrology

P14-01

Curved cantilever design for a robust and scalable microelectromechanical switch, Daniel Grogg, Ute Drechsler, Armin Knoll, Yu Pu, Christoph Hagleitner and Michel Despont, IBM Research - Zurich

We propose a novel concept for in-plane curved cantilever switches for logic applications that is compact and robust because of good control of the actuation gap in the closed position. All gaps are defined through the thickness of the same layer. Hence, the fabrication process is simplified and allows scaling.

P14-02

Nanomechanical Tuning Forks Fabricated by Focused-ion-beam Chemical Vapor Deposition, Hiroki Ashiba, Reo Kometani, Shin'ichi Warisawa and Sunao Ishihara, The University of Tokyo

Nanomechanical tuning forks were fabricated by focused-ion-beam chemical vapor deposition. Vibration characteristics of the tuning forks were evaluated with a laser-Doppler vibration measurement system. The enhanced quality factors compared with nanomechanical cantilevers were obtained from the measurement of the tuning forks both in a vacuum and the air.

P14-03

Bimaterial electro-mechanical systems for audio frequency applications, Enrico Mastropaolo, Rhonira Latif, Thomas Koickal, Alister Hamilton, Rebecca Cheung, Michael Newton* and Leslie Smith*, University of Edinburgh, *University of Stirling

SiN/Al resonant gate pFETs are fabricated to be used in an adaptable MEMS acoustic sensor inspired by the human ear. The stress in the SiN is tuned to achieve a relatively straight profile for gates (double-clamped beams) with length up to 5800 µm and width of 10 and 20 µm.

 

Nanoimprint

P15-01

Full area real time monitoring of filling process by dark field illumination in UV nanoimprint lithography (Invited), Qing Wang, Hiroshi Hiroshima, Kenta Suzuki and Sung-Won Youn, AIST Japan

A system for real-time monitoring of a whole-field mold area using a dark field illumination was proposed to verify the integrity of resist-filling in UV nanoimprint lithography. The sysytem was successfully applied to monitor the filling process using a mold with patterns in the order of 2μm to 100μm.

P15-02

Large-Area Nanostructures by Laser-Scanning Imprinting (Invited), Toshimi Sato, Keisuke Nagato, Junho Choi, Tetsuya Hamaguchi and Masayuki Nakao, Univ. Tokyo

We propose a laser-scanning imprinting for large-area nanostructured polymers. We demonstrated imprinting on a polymer film in an area of 10×10 mm2 in about 20 s. A higher power density and a higher scanning speed lead to a shorter cycle time.

P15-03

Sub-100 nm three dimensional diffractive optical elements fabricated by UV light assisted roll-to-roll nanoimprint lithography, Nikolaos Kehagias, Achille Francone and Clivia Sotomayor Torres, Catalan Institute of Nanotechnology

We report on the fabrication of three dimensional (3D) sub-100 nm features using UV light assisted roll to roll (R2R) nanoimprint lithography. The features have been fabricated in a 500 nm thick Ormostamp material which has been coated on a flexible PET substrate.

P15-04

A Tri-layer Method to Fabricate Wafer Scale Nanoimprint Mold by Copolymer Lithography, Yixing Liang, Shoham Bhadra, Stephen Chou, Princeton University

We report a tri-layer method that offers excellent lift-off of copolymer and pattern transfer on wafer scale. We achieved 34 nm pitch, ~17 nm diameter metal dots after lift-off. In addition, we used those dots to fabricate a wafer scale nanoimprint mold consisting of 0.6 T/in2, 50 nm high pillars.

P15-05

Control of Inclined Angle of Glass-like Carbon Mold by Defocus UV Exposure on Si Containing Photoresist, Harutaka Mekaru, Chieko Okuyama and Akihisa Ueno*, National Institute of Advanced Industrial Science and Technology (AIST), *Nano Craft Technologies Co.

We successfully controlled the inclined angle of pattern’s sidewalls in a glass-like carbon (GC) mold in thermal-imprinting on a glass substrate. The inclined angle of pattern’s sidewalls in a Si containing photoresist was controlled by a defocus UV exposure technique. The GC was then etched using the photoresist masking layer.

P15-06

Replacement of Trapped Air by Fluoride Liquid in Thermal Nanoimprint, Harutaka Mekaru and Hiroshi Hiroshima, National Institute of Advanced Industrial Science and Technology (AIST)

As a method to suppress a defective molding by a trapped air, we developed an immersion nanoimprint technique by spraying between the mold and molding material an optimum amount of fluoride liquid with its boiling point higher than of the imprint temperature to replace the compressible gas by a incompressible liquid.

P15-07

Dual-Layer Thermal Nanoimprint Lithography without Dry Etching, Yunbum Jung and Xing Cheng, Texas A&M University

In this work, we demonstrate an efficient thermal nanoimprint on dual non-compatible polymer layers - PMMA on P3HT. Depending on thermal nanoimprint parameters, both single-layer and double-layer patterning can be achieved. The presented technique is highly compatible with organic functional materials, thus it is very useful in the fabrication of high-performance organic transistors.

P15-08

Characteristics of mechanical vibration in imprinted nanostructures, Yuji Kang, Yasuki Nakai, Makoto Okada, Yuichi Haruyama and Shinji Matsui, University of Hyogo

To design devices to be fabricated by NIL, it is important to understand the properties of the product. In this work, we present evaluation of density of the imprinted pillar. The density can be calculated by measuring resonant frequency of the imprinted pillar which was characterized by AC electrostatic force.

P15-09

Pattern-size Effect of Reorientation of Photoinduced Liquid Crystalline Polymer by Thermal Nanoimprinting, Makoto Okada, Mami Kurita*, Emi Nishioka*, Mizuho Kondo*, Yuichi Haruyama, Akira Emoto**, Hiroshi Ono***, Nobuhiro Kawatsuki* and Shinji Matsui, Laboratory of Advanced Science and Technology for Industry, Univ. of Hyogo, *Department of Materials Science and Chemistry, Graudate School of Engineering, Univ. of Hyogo, **Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, ***Department of Electrical Engineering, Nagaoka Univ. of Technology

We reported that the photoinduced liquid crystalline polymer was reoriented by thermal nanoimprinting. We assumed that the pattern size is a one of the important factors in reorientation process. We evaluated the pattern size dependence of the degree of the orientation.

P15-10

High Volume Nanoimprint Lithography technology and applications, Torbjörn Eriksson, Johan Ring, Gang Luo, Prasanna Venkatesh Krishnan and Babak Heidari, Obducat Technologies AB

This paper will show that NIL is a manufacturing ready technology by evaluating a series of 8000 imprints from a quality point of view. In addition, different applications based on different type of substrates will be shown including LEDs (III/V substrates) and organic electronics (flexible substrates)

P15-11

Fast and Continuous Patterning on the Surface of Plastic Fiber by Using Thermal Roller Imprint, Akihiro Ohtomo, Mitsunori Kokubo, Hiroshi Goto, Harutaka Mekaru* and Hideki Takagi*, BEANS Project / Toshiba Machine Co., Ltd., *BEANS Project / National Institute of Advanced Industrial Science and Technology

We succeeded in high-speed continuous patterning on the surface of plastic fiber at a feeding speed 20 m/min by using thermal roller imprint method. We used a cylindrical mold with seamless micro-structures ingrained on its surface.

P15-12

Au Nanorods and Nanogap Split-Ring Structures Fabricated by Reactive-Monolayer-Assisted Thermal Nanoimprinting and Electrodeposition, Tatsuya Tomioka, Shoichi Kubo, Koichi Nagase, Morihisa Hoga* and Masaru Nakagawa, Tohoku University, *Dai Nippon Printing Co., Ltd.

We have reported reactive-monolayer-assisted thermal nanoimprint lithography (R-TNIL) as a simple and mass-productive metal nanofabrication method. In this study, nanorods and nanogap split-ring (SR) structures previously proposed as a kind of metamaterial structures by Tanaka et al. were fabricated by R-TNIL and electrodeposition (ED).

P15-13

Release Layer Free Acrylate Resins for Ultraviolet Nanoimprinting Prepared by Adding Segregation Auxiliary Agents, Shunya Ito, Cheol Min Yun, Kei Kobayashi and Masaru Nakagawa, Tohoku University

In this report, we investigated surface segregation of long-chain fluoroalkyl moieties in UV-curable acrylate resins. Heptadecafluoro-1,1,2,2-tetrahydrodecyl acrylate (17F-AC) was cooperatively assembled at a cured resin surface by adding hexadecafluoro-1,1,9-trihydrononyl acrylate (16F-AC) which functioned as a segregation auxiliary agent. The ternary acrylate resin could be used as a release layer free UV-curable resin for UV nanoimprinting with a silica mold.

P15-14

Fluoroalkyl-Containing Surfactants to Reduce Release Energy of UV-Cured Acrylate Resin, Masaru Nakagawa and Yoshitaka Tsukidate, Tohoku University

In this study, we used a radical-type UV-curable resin containing a diacrylate and a photoinitiator. Seven long-chain fluoroalkyl alcohols and four related compounds were selected as additive surfactants, because a surface governed by long-chain fluoroalkyl moieties makes a low-energy surface. The release energies of the base resin adding 2.0 wt% each surfactant were measured and compared.

P15-15

High Density Pattern Transfer via Roll to Roll Ultraviolet Nanoimprint Lithograpy using Replica Mold, Jun Taniguchi, Noriyuki Unno, Hiroki Maruyama, Masashi Saito, Hiroshi Yoshikawa, Go Tazaki* and Toshiyuki Zento*, Tokyo University of Science, *KURARAY CO., LTD.

We have developed replica mold techniques for high density line and space pattern transfer on roll to roll ultraviolet nanoimprint lithography(RTR UV-NIL). As a result, high density pattern with 100 nm line and space pattern can be transferred via RTR UV-NIL.

P15-16

Development of continuous phase lithography and application to transparent conductor fabrication, Moon Kyu Kwak, Jong G. Ok* and L. Jay Guo*, Kyungpook National University, *University of Michigan

A continuous fabrication technique by using a roll-type phase-shift mask was developed. Also, transparent metal electrode was fabricated as feasible application.

P15-17

Model of Curing Shrinkage and Kinetics Parameters of Acrylate-based UV-embossing Resist Based on Free Volume Theory, Peng Jin, Nan Liu, Jie Lin and Philips Prewett*, Research Center of Ultra-precision Optoelectronic Instrumentation, Harbin Institute of Technology, *Mechanical Engineering, the University of Birmingham

A model which can be used to simulate the curing shrinkage and kinetics parameters of acrylate-based UV-embossing resist simultaneously based on free volume theory and kinetics model of polymerization is proposed. Experiment results indicate that, the simulation of conversion behavior is almost the same as experiments. And dynamic shrinkage during polymerization also fits with the model results.

P15-18

Cleaning Defects of Soft UV-Nanoimprint Molds for High Aspect-Ratio Features, Andreas Finn, Bo Lu, Robert Kirchner, Xaver Thrun*, Karola Richter and Wolf-Joachim Fischer, Technische Universität Dresden, *Fraunhofer Center Nanoelectronic Technologies CNT

Cleaning defects of soft molds for the direct patterning of high aspect ratio with UV-NIL are presented. Different mold materials as well as cleaning agents have been evaluate experimentally and using full three-dimensional simulations. In conclusion , there is a need for ultra rigid soft molds.

P15-19

Flow behaviors of a polymer according to the imprint velocity during pressing step in NIL, JiHyeong Ryu, HyungJun Lim*, Hyun-Ha Park* and JaeJong Lee*, University of Science and Technology, *Korea Institute of Machinery and Materials

The viscosity of polymer is key parameter in NIL. This viscosity denpends on the shear rate induced by the imprint pressure and the temperature. Thus, the simulation is conducted to understand physical phenomenon by analysis offilling behavior of polymer according to the temperautre and the pressure with time.

P15-20

Release Agent Properties in Ultraviolet Nanoimprint Lithography using High-Aspect-Ratio Nanoscale Molds, Jun Taniguchi and Junki Takahashi, Tokyo University of Science

Using high-aspect-ratio and large-surface-area molds, assessment of release properties in UV-NIL is possible. In this study, two types of release agent were evaluated. As a result, long fluorine chain silane coupling agent is effective for high-aspect ratio pattern transfer. In addition, mixture or post treatment of short fluorine chain is effective for mold life extension.

P15-21

Impact of Mold-Resist Roughness on Friction and Adhesion Properties by Nano Tribological Inspection, Łukasz Ocypa, Tomoki Nishino*, Hiroaki Kawata*, Yoshihiko Hirai* and Zygmunt Rymuza, Institute of Micromechanics and Photonics, Warsaw Univ. of Technol., *Physics and Electronics Engineering, Osaka. Pref. Univ.

The roughness on side wall of the mold is essential to investigate the mold releasing. The Si surface is roughed by dry etching and the roughed Si is replicated to PMMA by nanoimprint. Friction and adhesion force are measured using AFM. The friction shows local minimum at around Ra=1.0 nm.

P15-22

Reorientation Evaluation of Bidirectional Line Pattern on Photoinduced Liquid Crystalline Polymer Fabricated by Thermal Nanoimprinting, Makoto Okada, Mami Kurita, Emi Nishioka, Mizuho Kondo, Yuichi Haruyama, Akira Emoto, Hiroshi Ono, Nobuhiro Kawatsuki and Shinji Matsui, Univ. of Hyogo

We reported that the photoreactive liquid crystalline polymer material was aligned by thermal nanoimprinting. If a mold with bidirectional line and space (L&S) pattern is used for the thermal nanoimprint, two reorientation directions of the molecules may be induced. We carried out thermal nanoimprinting using the bidirectional L&S pattern mold.

P15-23

Position control of MOVPE grown GaN nanorods using nanoimprint lithography, Torbjörn Eriksson, Ki Dong Lee, Babak Heidari, Patrick Rode*, Werner Bergbauer* and Martin Strassburg*, Obducat Technologies AB, *Osram Opto Semiconductors GmbH

This paper will show that NIL is the preferred technology to produce nanopatterned GaN substrates highly suitable to grow defect free arrays of position-controlled nanorods for use in ultrahigh brightness LED applications.

P15-24

Study on de-molding Kinetics of Peeling and Perpendicular Releasing in NIL process, Tomoki Nishino, Hiroaki Kawata and Yoshihiko Hirai, Physics and Electronics Engineering, Osaka. Pref. Univ.

Template releasing in nanoimprint is essential issues. Two different template releasing modes are studied. In the peeling mode, the templates are released by lower load and the phenomena is characterized by fracture theory. On the other hand, large releasing load are required in the perpendicular releasing mode in rigid systems.

P15-25

Release-Optimized UV-NIL Resists, Hakan Atasoy, Marko Vogler, Freimut Reuther and Gabi Gruetzner, micro resist technology GmbH

In this contribution we present the implementation of PFPE components in spin-coatable UV-NIL resists (denoted as XNIL) which are optimized with respect to the whole spectrum of industrial requirements for UV NIL, particularly resulting in very low release forces.

P15-26

Filling Characteristics of Imprint Process for Concave Pattern Molds, Hiroaki Kawata, Yuuta Watanabe, Masaaki Yasuda and Yoshihiko Hirai, Osaka Prefecture University

Pattern defects due to resist filling problem are sometimes observed for the thermal imprint process. The defect formation conditions are explored for various concave molds, which has cavity patterns in a large substrate surface. The defect formation mechanism is discussed in detail.

P15-27

Crosslinking control during imprint for hybrid lithography (T-NIL + UV-L), Khalid Dhima, Christian Steinberg, Andre Mayer, Saskia Möllenbeck, Si Wang and Hella-Christin Scheer, University of Wuppertal

A reversed-order hybrid lithography process (exposure-thermal imprint-development) was investigated, in particular, with respect to the potential of this type of process for easy residual layer removal during development with negative tone resists; the limits for residual layer removal are explored.

P15-28

Enhanced Transmission through Gold Nanohole Arrays Fabricated by Thermal Nanoimprint Lithography for Surface Plasmon Based Biological Sensing, Josu Martinez-Perdiguero, Aritz Retolaza, Deitze Otaduy, Aritz Juarros and Santos Merino, Tekniker

In this contribution we present nanohole arrays fabricated using thermal nanoimprint lithography integrated into a microfluidic device for detection of biological analytes using surface-plasmon-mediated enhanced optical transmission.

P15-29

Injection compression molding of replica molds for nanoimprint lithography, Keisuke Nagato, Tetsuya Hamaguchi and Masayuki Nakao, The University of Tokyo

We fabricated replica mold for nanoimprint lithography using injection compression molding, which is a low-cost and high-throughput process for replication of nanostructures. If the replica mold, i.e., disposable mold is used for nanoimprint lithography, the most critical barrier of durability of mold may be overcome.

P15-30

Direct Nanoimprinting of Functional Inorganic Layers for Nanophotonic Chip Devices, Carlos Pina-Hernandez, Christophe Peroz, Stefano Cabrini*, Cosimo Calo*, Scott Dhuey* and Sergey Babin, aBeam Technologies, *The Molecular Foundry

The direct imprinting of functional inorganic materials has been performed to fabricate high quality nanophotonic chip devices. A new type of metal-organic precursor based on alkanoate chemistry was identified as the best choice for high quality thermal imprinting of high refractive index TiO2 nanostructures with good optical properties.

P15-31

Directed self-assembly of PS-PEO using solvent vapors assisted nanoimprint lithography, Claudia Simao, Achille Francone, Nikolaos Kehagias, Clivia Sotomayor-Torres, Dipu Borah*, Parvaneh Mokarian-Tabari* and Michael Morris*, ICN, *UCC

Solvent vapors assisted nanoimprint lithography has been employes to direct the self-assembly of polystyrene-polyethyleneoxide block copolymer returning microphase segregation dependent of the stamp features and sizes. Using solvent annealing combined with NIL has permitted to combine DSA and patterning in one-step in ultra mild conditions.

P15-32

Wire-Grid Polarizer by Nanoimprint Lithography Using Epoxysilsesquioxane, Young Jae Shin, Carlos Pina-Hernandez, Hui Joon Park, L. Jay Guo, Moon Kyu Kwak, Jong G. Ok, Peng-Fei Fu*, University of Michigan, *Dow Corning Corporation

In this study, we report on the fabrication of the Wire Grid Polarizer which get the unique structure by nanoimprint lithography (NIL) with Epoxysilsesquioxane and following tilted Aluminum (Al) deposition two times at the opposite direction.

P15-33

Study of demolding Characteristics in continuous UV nanoimprinting, Shuso Iyoshi, Makoto Okada, Yuichi Haruyama, Shinji Matsui, Kei Kobayashi*, Shu Kaneko*, Masaru Nakagawa*, Hiroshi Hiroshima**, University of Hyogo, *Tohoku University, **National Institute of Advanced Industrial Science and Technology

This work is related to UV nanoimprint and the durability of the mold surface. The practical approach of this kind is unavoidable toward the application of UV nanoimprint technology. This work brought the prospect for more than 2000 shots of continuous imprinting.

P15-34

Development of jet rollable nanoimprint process to fabricate bio-polymer nanostructures, Lichuan Chen, Gyu Kim, Hongbing Lu, Jinming Gao*, Walter Hu, University of Texas at Dallas, *University of Texas Southwestern Medical Center

We have developed a jet rollable nanoimprint process and system for high-throughput fabrication of polymer structures. The process uses micro-inkjet technique to deposit micro-droplet array of biopolymer onto the rolling web to form uniform films followed by rollable nanoimprint process to create microscale and nanoscale structures in functional polymer.

P15-35

Fabrication of Adhesion-free Transparent Roll Stamp for Large Area Patterning using UV-typed Roller Nanoimprint Lithography, JaeJong Lee, Korea Institute of Machinery and Materials

To fabricate some flexible electronic devices on large area, a roll-to-roll nanoimprint system became hot issue in the recently. It has many advantages to fabricate some functional structures with continuous and fast pattern transfer process on large area. In this paper, Adhesion-free Transparent Roll Stamp for Large Area Patterning using UV-typed Roller Nanoimprint Lithography are proposed.

P15-36

Fabrication of 3-dimensional Nanoimprint Stamps - A comparison of 4 approaches using FIB, Heinz D. Wanzenboeck, Simon Waid, Emmerich Bertagnolli, Vienna University of Technology

The main challenge with 3-dimensional NIL is the availability of 3-dimenional stamps. This work systematically compares 4 different approaches for producing 3-dimensional NIL-stamps utilizing a focused ion beam (FIB): (i) Physical milling, (ii) gas assisted etching,(ii) patterning of an additional hardmask layer or (iv) patterning by dose-dependent implantation of Ga.

P15-37

3-D Nanomolding, Bahador Farshchian, Sooyeon Park*, Jaejong Lee**, Jinsoo Kim***, Sunggook Park, Louisiana State University, *University of Science and Technology, **Korea Institute of Machinery and Materials, ***Kyung Hee University

In this presentation we show a two-step molding technique, named as 3D nanomolding, which allows for patterning nanostructures on arbitrarily non-planar substrates, even with vertical sidewalls of microstructures.

P15-38

Thermal Imprinting Process using ZnO Nanoparticles-Dispersed Resin for the Improvement of Light Extraction Efficiency of GaN-based LEDs, Kyeong-Jae Byeon, Han-Byeol Jo, Joong-Yeon Cho, Jin-Seung Kim, Moo-Hyun Kwon*, Hyuk-Jin Cha**, Heon Lee, Korea University, *Woosuk University, **HunetPlus

P15-39

Reduction of proximity effects using high-contrast developer in fabricating large-area nanoimprint molds, Minjun Yan, Jaesun Lee, Yujiao Sun, Ilesanmi Adesida, Debashis Chanda and John Rogers, University of Illinois at Urbana-Champaign

The proximity parameters in electron beam lithography can be determined using special-designed patterns. The proximity effect was alleviated with a combination of resist-model using high-contrast developers. 0.5 mm × 0.5 mm area of silicon nano-pillars were fabricated by dry etching. Also, the imprint in SU-8 resist was achieved.

P15-40

Effect of offset temperature on replication of laser-assisted imprinting, Keisuke Nagato, Toshimi Sato, Tetsuya Hamaguchi and Masayuki Nakao, The University of Tokyo

We have proposed laser-assisted imprinting, in which the laser is irradiated the mold and the light-absorption layer is directly heated and then the mold and substrate surfaces are heated together. We investigated the effect of offset temperature on the replication. Using this offset technique, roller imprinting can be realized.

 

Nanophotonics

P16-01

Resonant Dielectric Nanostructures for biosensor applications (Invited), Mohamad Hojeij, Yasin Ekinci, Li Wang, Benedikt Oswald, Vitaliy Guzenko, Andreas Lieb* and Jens Gobrecht, Paul Scherrer Institut, LMN, *Zeptosens

In this work, we report the fabrication and characterization of dielectric nanostructures such as SiO2, ZnO and TiO2 nanopillar arrays and study of their electromagnetic resonance behavior for field-induced fluorescence enhancement and their application in the optical biosensing technology.

P16-02

Surface Chemical Imaging at the Nanoscale (Invited), Francesco de Angelis, Fondazione Istituto Italiano deTecnologia

We report on the design, fabrication and measurements of a photonic-plasmonic device that is fully compatible with AFM and Raman spectroscopy. AFM surface topography was performed in combination with Raman scattering experiments enabling chemical sensitivity with a spatial resolution up to 7 nm in label free conditions.

P16-03

Tunable Plasmonic Light Trapping Metal Structures, Aleksandr Polyakov, Kevin Thompson, Howard Padmore, Scott Dhuey, Deirdre Olynick, Stefano Cabrini and Peter Schuck, LBNL,

Polarization-selective completely absorptive resonant metallic subwavelength grating with an ultra-wide spectral and angular bandwidth is presented. Post-fabrication resonance tuning is demonstrated by ALD coating the grating.

P16-04

Plasmonic Nanostructures Fabricated using Helium and Gallium Ion Beam Instruments., N.J. Zaluzec, D.J. Miller, J.M. Hiller, C. Huynh*, L. Scipioni* and M. Ananth**, Argonne National Laboratory, *Carl Zeiss Microscopy, **Carl Zeiss NTS

We report on electron microscope studies of plasmonic objects consisting of engineered nanostructures of gold fabricated using Ga FIB and Helium Ion Microscopes and the structuring results compared. The Ga ion beam patterns are an order of magnitude larger in size than those created using the He Ion system.

P16-05

Fabrication of nano metallic holes for color filter based on a controllable polystyrene spheres self-assemble, Li shuhong, Du jinglei and Ren liangke, Sichuan University

Metallic nano-holes arrays can be used as color filter used in OLED. We reported a fabrication method for large area metallic holes and studied it. Metallic holes with different dimension and period are fabricated. The holes realized enhanced transmission at wavelength of 605.6nm、682.41nm and 810.2nm respectively.

P16-06

Putting Plasmonic Probes in Perspective: The Case for the Campanile Tip, Wei Bao, Stefano Cabrini*, Alex Weber-Bargioni* and P. James Schuck*, UC Berkeley, *Molecular Foundry, LBNL

Based on simulations of various “optical transformer” geometries, we propose a novel photonic-plasmonic hybrid Scanning Near-field Optical Microscopy probe called the “campanile” tip. These tips couple the photonic to the plasmonic mode, then adiabatically compress the plasmon mode, over a broad bandwidth, which is crucial for many optical spectroscopy techniques.

P16-07

High aspect-ratio doped Si nanostructures for plasmonics induced light funneling applications, Alex Kaplan, Haofei Shi and Lingjie Guo, University of Michigan

High aspect-ratio plasmonic nanostructures have shown the capability of high absorption through “light funneling” independent of incident angle. However, these structures are difficult to pattern into metal films, especially over large areas. We propose creating these nanostructures in heavily doped Si using nanoimprint lithography to realize novel, large-area plasmonic devices.

P16-08

Embedding and Combining Plasmonic Elements and Photonic Crystal Structures, Jürgen Probst, Max Schoengen, Nils Nüsse, Janik Wolters*, Bernd Löchel and Oliver Benson*, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, *Humboldt University Berlin

We fabricated plasmonic-photonic hybrid systems by lithographically integrating gold antennas into photonic crystals. Interfe¬rences between the resonances of the photonic crystals and the plasmonic gold antennas could be caused by systematically variating the gold antenna’s sizes, al-lowing us to measure light-matter coupling and nonlinear effects such as plasmon induced transparency.

P16-09

Lithium Niobate Nanowaveguides fabricated by Ion-Beam Enhanced Etching, Reinhard Geiss, Holger Hartung, Frank Schrempel, Ernst-Bernhard Kley, Thomas Pertsch and Andreas Tünnermann, Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena

LiNbO3 nanoscale waveguides allow for highly efficient frequency conversion mediated by strong spatial confinement of waveguide modes. Their fabrication is facilitated through ion-beam enhanced etching. The required mask is patterned by electron-beam lithography. Subsequent wet etching results in a grid of freestanding nanowires that are further manipulated for optical testing.

P16-10

Stitch-Error Free Electron Beam Lithography of Periodic Structures, Jason Sanabia, Kevin Burcham, Michael Kahl*, Ralf Jede*, Raith USA, Inc., *Raith GmbH

A new and unique method, called modulated beam moving stage (MBMS), eliminates the stitching errors and increases the throughput in the EBL of periodic structures. MBMS produces the following structures: 2000 nm and 250 nm pitch gratings, an array 300 nm diameter circles, a phase-shifted grating, and a chirped grating.

P16-11

Lithographically-Defined Nanostructures for Color Plasmonic Printing, Karthik Kumar, Huigao Duan, Ravi S. Hegde, Samuel C.W. Koh, Jennifer Wei, Joel K.W. Yang, Institute of Materials Research and Engineering, Singapore

This contribution describes the fabrication of high-resolution color microphotographs through the use of plasmonic nanodisks on pillars. The individual structures were defined in hydrogen silsesquioxane using electron beam lithography and metallized via electron beam evaporation. The complete spectrum of visible colors was achieved in a single lithographic process step.

P16-12

Surface plasmon resonance coupling assisted optical transmission through Ag/SiN /Ag photonic crystal slabs, Jia-Hong Shyu, Yu-chen Huang, Neil Ou, Huang-Ming Lee, Jong-Ching Wu, National Changhua University of Education

Enhanced optical transmission owing to coupled surface plasmon resonance and controllability of transmission peaks through Ag/SiN/Ag trilayer perforated with a hole-array (called Ag/SiN/Ag-PCS)are demonstraed by using electron-beam lithography and reactive ion etching processes. Optical transmission efficiency through Ag/SiN/Ag-PCS is about 30%, much greater than 17% of transmission efficiency through Ag/SiN-PCS, and transmission peaks are shifted about 50 nm in wavelength.

P16-13

The Sensing Properties of IR Nanostructed Plasmonic Crystals Fabricatied by Electron Beam Lithography and Argon Ion Milling, Baogang Quan, Weijie Sun, Zhe Liu, Xiaoxiang Xia, Junjie Li, Changzhi Gu, Chinese Academy of Sciences,

Plasmonic crystals fabricated by elelctron beam lithography and Argon ion milling were used to detect biotin-avidin binding event. FDTD simulations were carried out to understand the sensing mechanism.

P16-14

Non-periodic sub-wavelength gratings fabricated by helium ion beam lithography, Zhen Peng, Wen-di Li, David Fattal, Ray Beausoleil, Hewlett Packard Labs

We present a non-periodic sub-wavelength TM grating coupler on SOI fabricated using helium ion beam lithography (HIBL). The superior proximity reduction feature of HIBL leads to faithful replication of the carefully designed non-periodic grating structure, which was difficult to achieve with other lithography techniques.

P16-15

A Novel Grating-Apodization Technique in Equivalent-Chirped Sampled-Bragg Gratings, Jie Sun and Henry Smith, Massachusetts Institute of Technology

A novel grating apodization technique is demonstrated in sampled Bragg grating using optical contact lithography. Using the proposed apodization technique, an equivalent chirped sampled Bragg grating is fabricated and measured, where a flat in-band reflection and smooth group delay are achieved.

P16-16

Breaking the diffusion limit of nanosensors through super hydrophobic and nano plasmonic structures, francesco de angelis, Fondazion Istituto Italiano di Tecnologia

Here we show how superhydrophobic surfaces can be exploited to strongly enhance the detection limit of nanosensors. Molecules of interest, initially dispersed in solution of few mm3 in volume, are guided toward the plasmonic nanosensor with an accuracy of few microns, enabling detection sensitivity up to attomolar concentration.

P16-17

Immersion Optics for Excitation of Surface Plasmons in a Transmission Mode Photoemission Electron Microscope, Vignesh Viswanathan, Zhongkai Ai and Daniel Pickard, National University of Singapore

In this work, we develop the illumination optics for an existing PEEM operating in transmission mode to excite surface plasmons through attenuated total reflection/Kretschmann coupling. The practical challenges and design considerations in the implementation of this system are discussed. Preliminary experimental results will be presented along with the existing limitations.

P16-18

Enhancement of Light-Emitting Efficiency for GaN-based Light-Emitting Diodes by Nanoscale Bump and Pit ITO Surface, Zhe Liu, Gang Wang, Haifang Yang, Xiaoxiang Xia, Baoli Liu, Changzhi Gu, Chinese Academy of Science

Nanoscale bump and pit ITO structures were fabricated on light-emitting diodes by argon ion beam etching method, and light emitting enhancement was observed.

P16-19

Angle Independent Reflective Color Filters by Plasmonic-induced Light Funneling Effect, Yi-Kuei Wu, Cheng Zhang and Jay Guo, University of Michigan, Ann Arbor

Angle insensitive color filtering effect is an important issue in display industry. In this work, we propose a new plasmonic nanostructure scheme based on light funneling into nanoslits to achieve angle robust reflective color filters. Three basic colors of subtractive color scheme, cyan magenta and yellow, are also demonstrated.

 

Nanostructures and Processing

P17-01

Lithographically Designed Porous Plasmonic Nanostructures (Invited), Jung-Sub Wi, Satoshi Tominaka, Kohei Uosaki and Tadaaki Nagao, National Institute for Materials Science (Japan)

Direct-fabrication of synthetic nanoparticles by top-down physical routes, in which materials are vacuum deposited in a pre-patterned polymer template, enables exquisite control over material composition, internal nanostructure, overall size/shape, and consequently physical properties of nanoparticles. Here, we report the lithographically designed plasmonic nano-disks/dishes containing high-density nanopores for use in molecular sensing and imaging applications.

P17-02

Preparation of surfaces with patterned roughness for sensing application, Si Wang, Khlid Dhima, Andre Meyer, Saskia Möllenbeck and Hella-Christin Scheer, University of Wuppertal

Roughness patterns are prepared for sensing applications. Si is masked and etched in SF6/O2, where the etching process was optimized to provide a definitely rough surface for scattering light into off-normal directions. The suitability of Cr and photoresist as an etch mask for this purpose is investigated.

P17-03

Template-Assisted Self-Assembly and Alignment of ZnO Nanowires with Post-Deposition Growth, Tao-Hua Lee and Xing Cheng, Texas A&M University

In this work, a nanoimprint-assisted self-assembly method is demonstrated for large-scale alignment of ZnO nanowires at predetermined locations. Post-deposition growth of the horizontally aligned ZnO nanowires improved connectivity among nanowires. This technique presents a facile route towards solution-processed ZnO electronics with low cost, good performance, and high scalability.

P17-04

Pyramid Array Substrates for Biomedical Studies, Ronny Loeffler, Monika Fleischer, Dieter Kern, Claudia Matschegewski*, Susanne Staehlke* and Barbara Nebe*, University of Tuebingen, *University of Rostock

In order to understand the influence of structured material surfaces on adjacent biosystems, a broad investigation of cellular reactions and material surfaces is needed. Process details for pyramidal arrays which offer very sharp edges and tips along with results from surface characterization will be presented for various pyramid sizes.

P17-05

Etching Process for Patten Transfer from Sphere-type PMMA-b-PMAPOSS Block Copolymer, Taku Iwase, Masaru Kurihara, Yoshiyuki Hirayama, Yasuhiko Tada* and Hiroshi Yoshida*, Central Research Laboratory, *Hitachi Research Laboratory, Hitachi, Ltd.

We investigated a selective etching of self-assembled PMMA-b-PMAPOSS block copolymer with PMMA spheres for 18-nm-pitch dot pattern transfer. We found that a single-step method with a proper etching selectivity was effective in maintaining the dot size dispersion during the pattern transfer process.

P17-06

Continuous Electron Beam Lithography Writing Modes for Optical Waveguide Nanofabrication, Frank Nouvertne, Guido Piaszenski, Michael Kahl, Ruud Schmits* and Pavol Bodis*, Raith GmbH, *TNO Delft

Fabrication of long waveguides extending over millimetres with highest degree of perfection has always been a challenge applying electron beam lithography techniques. Using a new and unique continuous writing mode called "Fixed Beam Moving Stage" (FBMS), we have been able to fabricate several mm long stitching error free arrayed and tapered waveguides.

P17-07

Fabrication of Polymer Nanostructures via Maskless O2 Plasma Etching, Ke Du, Yuyang Liu, Ishan Wathuthanthri, Wei Xu and Chang-Hwan Choi, Stevens Institute of Technology

In this paper, we demonstrate that high-aspect-ratio organic nanostructures with sub-100 nm scale can be fabricated on UV-absorbing polymers via maskless O2 plasma etching process. We further show that 3D hierarchical polymer nanostructures can also be conveniently fabricated by the method.

P17-08

Nanolithography and pattern transfer of dense sub-10 nm lines, Aju Jugessur, Mariya Yagnyukova and J. Stewart Aitchison, University of Toronto

In this report, electron beam lithography process development of dense sub-10 nm lines on 25 nm thick Hydrogen Silsesquioxane (HSQ) resist is investigated. 4 nm lines are successfully exposed using an optimized set of conditions and lift-off processes are developed for pattern transfer on silicon substrate.

P17-09

Fabrication of Hollow-Shell Nano-volcanoes from Mie Scattering of Colloidal Nanospheres, Xu A. Zhang, Jonathan Elek and Chih-Hao Chang, NCSU

We demonstrate the fabrication of hollow-core nano-volcano structures using Mie scattering by colloidal nanospheres. In this approach a nanosphere is illuminated, and a thick photoresist layer is placed in proximity to record the scattered 3D intensity pattern. Such hollow-core geometry may be useful for particle, cell trapping, and low-volume solution delivery.

P17-10

Fabrication of omniphobic surfaces using deposited silicon dioxide layer and dry etching process, Chulmin Choi, Jirapon Khamwannah, Duyoung Choi, Chin-Hung Liu, Seong-Deok Kong and Sungho Jin, University of California at San Diego

P17-11

Optical and Electrical Sensing application of High-Aspect-Ratio Nanoholes Formed by Etching of Latent Tracks, Makoto Fujimaki, Ken-ichi Nomura, Koichi Awazu, Kouta Yamashita*, Seigo Mizuno* and Yoshimichi Ohki*, National Institute of Advanced Industrial Science and Technology, *Waseda University

We developed waveguide-mode sensors that utilized a multilayer structure of SiO2 and Si on a glass substrate. The sensitivity is enhanced by forming nanoholes in the SiO2 layer. We found that electro-chemical reaction can be carried out in the nanoholes and that the reaction can be used for material detection.

P17-12

Negative electron-beam resist hard mask ion-beam etching process for the fabrication of nanoscale magnetic tunnel junctions, Sungwoo Chun, Daehong Kim, Jihun Kwon, Bongho Kim, Hyungyu Lee, Seonjun Choi and Seung-Beck Lee, Hanyang university

Deposition and etch back technique is utilized employing a hard mask layer for pattern definition. we utilized negative electron-beam resist (NER) hard mask process to overcome the hard mask induced nano-pattering difficulties.

P17-13

Non-planar nano-arc-gap arrays fabricated via colloidal lithography, Chongjun Jin and Yang Shen, Sun Yat-Sen University

We report a method to prepare non-planar silver nano-arc-gap arrays via inverted colloidal lithography and shadow silver evaporation. It is found that this structure exhibits an extraordianry optical transmission which is caused by localized surface plasmon resonance.

P17-14

Optimization of a Self-Closing Effect to Produce Bottle-Shaped Nanochannels in Quartz, Mariusz Graczyk, Martina Balaz, Heiner Linke and Ivan Maximov, Lund University

We present a modified method where we utilize a self-closing effect of SiO2 to fabricate nanochannels sub-surfaced in fused silica with a thin slit on top. The methods is based on oxidation process of silicon which results in a volume increase of SiO2 which is used to control the slit.

P17-15

E-Beam Patterning of Nanoparticle Filled Sucrose Resist, Kevin Roberts, Bryan Cord and Greg Cibuzar, University of Minnesota

Electron-beam patterning of nanoparticle filled sucrose resists has been demonstrated using a Vistec EBPG5000+. Cross-linking of the sucrose appears to be the mechanism of fixing the resist. Resist thicknesses of 6-800 nm are readily achievable, making this technique amenable to the patterning of nanoparticles, especially those in water-based solutions.

P17-16

Nanowires with controlled location and direction by surface-guided growth from patterned catalyst, Mark Schvartzman, David Tsivion and Ernesto Joselevich

Obtaining large arrays of perfectly positioned semiconductor nano-wires is demonstrated, by combining nano-patterning of catalytic metal with surface guided growth. The obtained parallel wires with the spacing, precisely controlled by catalyst nano-patterning, can be used for their integration in functional multi-wire systems.

P17-17

From Nanocone to Nanodisk: Structural Transformation of Nanoarrays via Mechanical Stresses, Yuyang Liu, Ke Du, Ishan Wathuthanthri and Chang-Hwan Choi

In this paper, we report a novel process to tune the shapes and alignments of nanoarrays, using simple mechanical stressing procedures with controlled directionality and compressibility. Such nanoarrays of well-controlled nanotopography via simple fabrication step will allow broader and new application possibilities to optical and photonic devices.

P17-18

Fresnel zone plates as X-ray lenses by electron beam lithography with HSQ resist, Yifang Chen, Yingtao Tian, Adnan Malik, Derek Jenkins and Graham Arthur

Using our earlier developed hot developing process for EBL in HSQ, we have successfully patterned Fresnel zone plates without the need of radius lines as the supporting structures. So far, the aspect ratio of 5/1 has been achieved. This process should have prospect for high resolution FZPs.

P17-20

Growth Characterization of Electron Beam Induced Silver Deposition from Liquid Precursor, Leonidas Ernesto Ocola, Cynthia Kessel*, Brian Chen**, Alexandra Joshi-Imre, Johnathan Park***, Ralu Divan, Argonne National Laboratory, *George Washington Middle School, **Illinois Mathematics and Science Academy, ***Northwestern University

The growth of electron beam induced deposited silver nanoparticles from an aqueous solution is studied as a function of acceleration voltage and dose. We find that there is an optimum acceleration voltage for particle deposition. Details of the particle growth and effect of liquid chemical composition are explored.

P17-21

Nanopatterning of “Disconnected” Metal Nanostructures on Polydimethylsiloxane (PDMS) Substrate by Using Free-Standing Photoresist Film as Stencil Lithography Mask, Ke Du, Yuyang Liu, Ishan Wathuthanthri, Wei Xu and Chang-Hwan Choi, Stevens Institute of Technology

In this paper, we report a new technique which can pattern metal nanostructures directly on PDMS substrate, capable of creating high-aspect-ratio nanostructures, by using free-standing photoresist film as a stencil lithography mask. The introduced nanopatterning technique will be of great benefit in fabricating flexible nanoelectronics/photonics devices such as plasmonic nanostructures.

P17-22

Nanofabrication with Si(311), Nicolaie Moldovan, Ralu Divan*, Advanced Diamond Technologies, *Argonne National Laboratory

The hereby study investigates the particularities of crystal-orientation dependent etching of Si (311) wafers and presents a series of engineering recipes and solutions enabling the use of these wafers in applications. Characteristic etch patterns for Si (311)are 3-faceted pyramidal V-grooves and deep trenches with tilted parallel walls.

P17-23

Tunable silver nano-pillar arrays as a surface-enhanced Raman scattering sensor by a self-aligned nanofabrication process, Wenjun Zhang, Xin-Ping Qu, Bing-Rui Lu, Yifang Chen*, Fudan University, *Rutherford Appleton Laboratory

Tunable silver nano-pillar arrays were fabricated by using EBL and DC magnetron sputtering technique successfully. The as-prepared substrates retain an excellent Raman-enhancement characteristic. It provides a reproducible and reliable method to fabricate the SERS sensor particularly in the high sensitivity biological detections.

P17-24

Novel techniques for modifying microtube surface with various periodic structures ranging from nano to micro scale, Zhaoqian Liu, Jinxing Li, Gaoshan Huang, Bingrui Lu, Yifang Chen*, Yongfeng Mei, Ran Liu, Fudan University, *Rutherford Appleton Laboratory

We have successfully fabricated the hybrid microtubes with micro/nano periodic structures on microtube by rolling up structured membrane from porous alumina template and nanoimprinted polymer. Besides, the sizes of the periodic structures outside the tubewalls are tunable ranging from nano to micro scale.

P17-25

3D Patterning of Si Micro and Nano Structures by Focused Ion Beam Implantation, Si Deposition and Selective Si Etching, Andreas C. Fischer, Kristinn B. Gylfason, Lyubov M. Belova, B. Gunnar Malm, Mohammadreza Kolahdouz, Göran Stemme, Yuri G.M. Rikers*, Frank Niklaus, KTH Royal Institute of Technology, *FEI Electron Optics

We report a novel method for additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon micro- and nanostructures. The ability to micro- and nanostructure silicon in 3D brings a wealth of opportunities in MEMS, NEMS, nanoelectronics, and nanophotonics, due to the beneficial mechanical, electronic, and optical properties of silicon.

P17-26

Fabrication of Nanostructured Hydrophobic Surfaces with Laser Interference Lithography, Hang Yu, Bing-Rui Lu, Hui Li, Jianying Li, Zhaoqian Liu, Ran Liu, Yifang Chen*, Fudan Universtiy, *Rutherford Appleton Laboratory

We propose a fabrication method combing LIL and RIE to pattern nanostructures for surface hydrophobicity purposes. It can form periodic nanostructures with a period ranging from 200 nm to 1.5 um on wafer scale. This technique also has great potential in fabrication of micro and nanolens and nanoimprint templates.

P17-27

Fabrication and magnetic properties of hundred-nanometer-scaled permalloy cylinders arrays, Y. C. Huang, C. Y. Kuo, Jia-Hong Shyu, C. M. Lee*, Lance Horng, J. C. Wu, National Changhua University of Education, *National Yunlin University of Science and Techgnology

A novel fabrication of magnetic cylinders with a uniform array and well-defined geometry by using a standard electron-beam lithography combined with DC-sputter coating and ion-beam milling processes is demonstrate. The dimensions of individual permalloy cylinder are designed as a diameter of 300 nm, a height of 750 nm, and a wall thickness of 20 nm.

P17-28

Patterning of porous silicon nitride membrane by CsCl self assembly, Wenhan Liu, Mark Ferguson, Mustafa Yavuz and Bo Cui, Waterloo Institute for Nanotechnology

Porous membrane can be used for TEM windows or separation of macromolecules or nano-particles. In this work, porous silicon nitride membrane with pore diameter of ~150 nm was fabricated by CsCl evaporation and self-assembly in air, followed by pattern transfer using Cr liftoff and RIE.

P17-29

Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry, Erica Douglas, Jeffrey Stevens, Randy Shul and Stephen Pearton*, Sandia National Laboratory, *University of Florida

The need for fabrication capabilities of benzocyclobutene with highly anisotropic and small dimension features is increasing. To this end, we have investigated the effects of chamber pressure, reactive ion etch (RIE) power, inductively coupled power (ICP) power, and SF6 concentration on etch rate, selectivity, and sidewall morphology.

P17-30

Engineering electrical properties of Silicon nanowires by focused electron beam induced processing with Chlorine, Heinz D. Wanzenboeck, Bassem Ismail, Peter Roediger, Johannes Greil, Martin Hetzel, Alois Lugstein and Emmerich Bertagnolli, Vienna University of Technology - Inst. F. Solid State Electronics

Focused electron beam induced Processing(FEBIP) with chlorine gas was used to chemically modify Si-nanowires surface. The electrical properties of FEBIP-processed nanowires showed a significant change of their electrical behavior. Based on recent theoretical calculations in litrature, it can be strongly assumed that the band gab of the Si-nanowires, at least in the surface layers, was changed due to chlorine processing.

 

Optical Lithography

P18-01

Fast Aerial Image Simulation for Partially Coherent Systems by TCC Decomposition with Analytical Kernels (Invited), Peng Gong, Wen Lv, Xinjiang Zhou and Shiyuan Liu, Huazhong Univ of Science and Technology

We propose a TCC decomposition method with pre-defined analytical kernels, which can be circle sampling functions, Zernike polynomials, Fourier series, or any other orthogonal functions. It demonstrates that this method is not only fast but also accurate enough for aerial image calculation, and will have applications in practical OPC systems.

P18-02

Talbot effect immersion lithography by self-imaging of very fine grating pattern, Takashi Sato, Toshiba

Referring to FDTD simulation results, we discuss Talbot effect immersion lithography by self-imaging. The ArF laser of 193 nm illuminates the quartz mask plate. Contact holes on half-pitch 35 nm lines are expected to be made. Also we found the 2nd order Talbot period doesn’t agree with the simulation.

P18-03

Fabrication of a Binary Phase Grating on a Fiber End by Utilizing Interference Lithography, Ching-Tung Tseng, Shih-Chieh Lin, Yung-Pin Chen, Yang-Kai Wu, Yi-Chuan Tseng and Lon A. Wang, Graduate Institute of Photonics and Optoelectronics, National Taiwan University

A novel method of fabricating binary phase gratings (BPGs) on facets of several fibers simultaneously is presented. The result of 1-D grating of period 364 nm proves the concept and implicitly indicates the possibility of mass production.

P18-04

Analysis on probe-sample interaction for scanning near-field photolithography (snp), zhuming liu, Clive Roberts, Yuan Zhang*, John Weaver* and Graham Leggett**, Nottingham University, *University of Glasgow, **Sheffield University

Experimental force measurements are carried out. The theoretical influences of the medium on van der Waals forces, electrostatic forces, pull-off forces and hydrodynamic forces are discussed. Results of force measurements and SNP in air and liquid verify a new exciting method to improve SNP

P18-05

Sensitivity Analysis for Lens Aberration Measurement in Lithographic Tools Using CTC-Based Quadratic Aberration Model, Shuang Xu, Xiaofei Wu, Tielin Shi, Zirong Tang and Shiyuan Liu, Huazhong University of Science and Technology

Recently, we proposed a quadratic aberration model for lens aberration measurement in optical lithography using a cross triple correlation based fast algorithm. In this paper we further propose a sensitivity analysis method to quickly evaluate the effect of each Zernike terms on the aerial image.

P18-06

Mask Aligner Process Simulation for Advanced Lithography and Resolution Enhancement Techniques, Michael Hornung, Ulrich Hofmann*, Nezih Ünal*, Uwe Vogler**, Arianna Bramati**, Tina Weichelt**, Reinhard Voelkel**, SUSS MicroTec Lithography GmbH, *GenISys GmbH, **SUSS MicroOptics SA

The recently introduced novel mask aligner illumination system (MO Exposure Optics) allows a customized shaping if the illumination light. This opens the field for optical proximity correction and source-mask optimization in mask aligners. Combined with a mask aligner lithography process simulation the application area will be enlarged widely.

 

Optical structures

P19-01

Continuous fabrication of polymer waveguides with smooth sidewalls by Dynamic Nano-Inscribing (DNI) and NanoChannel-guided Lithography (NCL) processes (Invited), Jong G. Ok, Cheng Zhang, Tao Ling and L. Jay Guo, University of Michigan

Dynamic Nano-inscribing (DNI) and NanoChannel-guided Lithography (NCL) can produce seamless and infinite long waveguide structures have ideally smooth sidewall regardless of the roughness existing on the original trench mold.

P19-02

Vibrant color transmission under cross-polarization through gold-coated gratings nanoimprinted in polymer foils, Keith Morton and Teodor Veres, National Research Council Canada

Functional optical topologies were fabricated simply, by direct nanoimprint, using working stamps to structure polymer foils and substrates. When gold-coated, the nanostructures exhibit vibrant color transmission under observation with cross-polarized light and provide a novel route to ultra-thin, durable and non-bleaching color transmission filters on low-cost materials.

P19-03

Fabrication of a band-limited mask for PHARO, Ivan Kravchenko, Justin Crepp*, Oak Ridge National Laboratory, *California Institute of Technology

The submission describes nanofabricatiion steps that have been applied to create ``band-limited” coronagraphic Ks- and Y-band masks which have been installed in a sensitive near-infrared instrument at Palomar observatory (PHARO) to enable direct imaging of planets that orbit nearby stars.

P19-04

Continuous fabrication of large-area flexible metamaterial via Roll-to-Roll nanopatterning for IR filter applications, Jong G. Ok, Hong Seok Youn, Moon Kyu Kwak, Myung-Gyu Kang, L. Jay Guo, Anton Greenwald*, Y Liu*, S Radhakrishnan*, University of Michigan, *Agiltron Inc.

High-throughput and fully-scalable roll-to-roll nanoimprint process is applied to the continuous fabrication of a large-area, flexible metamaterial array comprising Al disks patterned on the dielectric layer over a background Al layer.

 

Patterned Media and Data Storage

P20-01

Multi-domain storage in graded bit patterned media (Invited), Long Chang, Paul Ruchhoeft, Sakhrat Khizroev* and Dmitri Litvinov, University of Houston, *Florida International University

Bit patterned media is fabricated with a binary anisotropy distribution which supports a stable binary domain configuration. This enables to bit of information to be stored on each physical bit, effectively doubling the linear recording density.

P20-02

Fabrication of dense non-circular nanomagnetic device arrarys using self-limiting low-energy glow-discharge processing, Zhen Zheng, Long Chang, Paul Ruchhoeft, Sakhrat Khizroev And Dmitri Litvinov, Electrical and Computer Engineering, University of Houston

This work shows the result of recently research on etching process of self-limiting ion milling (SLIM)

P20-03

Fabrication of CoCrPt Alloy Bit Patterned Media at 1 Td/in2 for Recording Measurement, Elizabeth Dobisz, Dan Kercher, Michael Grobis, Jordan Katine, Olav Hellwig, Ernesto Marinero, Dieter Weller, Neil Robertson and thomas albrecht, Hitachi GST

CoPtCr alloy magnetic disks are directly patterned with e-beam lithography at densities of 1 Td/in2 to study recording performance and magnetic properties. Details of fabrication and magnetic recording are discussed. Particular attention is given to low etch damage and tribology.

P20-04

Development of a large areal metallic nano stamp fabrication process using UV nanoimprinting and pulse reverse current electroforming for discrete track media with pattern width of 35nm, Jiseok Lim, Jungjin Han*, Eikhyun Cho*, Young-joo Kim*, Shinill Kang*, Jinbeyung Lee**, Hiroshi Hatano*** and Norikazu Arai***, Max Plank Institute for Biophysical Chemisty, *School of Mechanical Engineering, Yonsei Univ., **Naraenanotech Corporation, ***Konica Minolta Opto Inc

In this research, we proposed a method to fabricate large areal metallic nano stamp for discrete track media (DTM) using UV nanoimprinting process and pulse reverse current (PRC) electroforming.

 

Resists

P21-01

High resolution dry photo-ablation development (Invited), Adam Schwartzberg, Pradeep Perera, Dimas Garcia de Oteyza, Martin Schmidt, Scott Dhuey, Bruce Harteneck, Rolf Falch, James Schuck, Stefano Cabrini and Deirdre Olynick, Lawrence Berkeley National Labs

We have overcome the limitations of capillary induced pattern collapse via a photo-ablation based dry development technique. An optical absorption change upon e-beam exposure allows for the selective ablation of a calixarene resist as defined by the election pattern. Features as small as 10 nm have been demonstrated.

P21-02

An In situ Analysis of EUV Resist Film Inhomogeneity during the Dissolution Process, Toshiro Itani and Julius Joseph Santillan, EIDEC, Inc.

Initial investigations on the existence/possible effect of resist film inhomogeneity on resist lithographic performance is discussed. This was done using in-liquid high speed atomic force microscopy which allows in situ analysis of the variation of film surface roughness at the exposed area before and during dissolution.

P21-03

Relationship between Film Thickness Loss and Polymer Deprotection for EUV and ArF Photoresists, Gustaf Winroth and Roel Gronheid, IMEC

In this paper, we report on the relationship between film thickness loss (FTL) after post-exposure bake (PEB) and the acid-catalyzed polymer deprotection of chemically amplified resists (CARs) with chemistries for ArF and EUV lithography.

P21-04

Point spread function analysis of dense high resolution nanodots in hydrogen silsesquioxane, Devin Brown, Caitlin Chapin, Ezra Kim, Gerald Lopez*, Nezih Unal*, Ulrich Hoffman*, Georgia Tech, *GenISys GmbH

It has been observed that dose correction for dense high resolution dots in HSQ resist is higher than predicted by standard monte carlo simulations. An empirical point spread function is determined from single point exposures which confirms the energy spread is more diffuse than predicted.

P21-05

Determination of Base Dose and Scattering Coefficients for Proximity Effect Correction in Electron Beam Lithography, Guy DeRose, Bophan Chhim, Axel Scherer, Scott Lewis*, Damien Jeanmaire*, Lucio Piccirillo*, California Institute of Technology, *The University of Manchester

In electron beam lithography, it is necessary to correct for proximity effects that otherwise lead to non-uniform doses. Uncorrected, these propagate through subsequent process stages, resulting in reduced device performance. Calculated values of base dose and scattering parameters at 100 keV will be presented for PMMA, ZEP and SML resists.

P21-06

High resolution patterning of Hafnium oxide based resist by EUV and Electron beam lithography, Mohamad Hojeij, Michaela Vockenhubera, Wang lI, Vitaliy Guezenko, Jens Gobrecht, Yasin Ekinci, Paul Scherrer Institut

The resolution capabilities of HfO2 based resist from Inpria corp. have been tested by electron beam and EUV lithography. We could demonstrate the high resolution capabilities of this negative tone resist. Half-pitch of 11 nm is shown by electron beam as well as by EUV lithography.

P21-07

Resolution improvement for positive tone poly(methyl methacrylate) resist, Jose P. Arrieta, Vitor R. Manfrinato and Karl K. Berggren, Electrical engineering and computer science department, Massachusetts Institute of Technology

The present work improves the resolution of PMMA on dot arrays and lines structures to 20 and 34 nm pitch respectively. Isolated double and triple dot structures are resolved at 15-nm-pitch. Dose contrast measurements for the different structures are modeled to have insight on the actual resolution limits for PMMA.

P21-08

Enhancing the Etch Resistance of PMMA-Based Photoresist to Meet ITRS Target from Year 2022, Yu-Chih Tseng, Anil Mane, Junling Lu, Jeffrey Elam and Seth Darling, Argonne National Laboratory

Sequential Infiltration Synthesis (SIS) is used to enhance the plasma etch resistance of PMMA and related photoresist for 193 nm photolithography. This enhancement allows reduction in resist thickness, preventing pattern collapse. Dense lines narrower than 30 nm with high aspect-ratio are fabricated in silicon without using any intermediate hard mask.

 

Tip based processing

P22-01

Patterning Silver Using an Atomic Force Microscope and Laser-induced Deposition from Liquids (Invited), Carlos Andres Jarro, Eugene U. Donev, Greg Schardein and J. Todd Hastings, University of Kentucky

While studying the laser-induced deposition of metals using a laser illuminated AFM and liquid cell, we encountered an unexpected phenomenon that could enable “negative tone” tip-based patterning. Specifically, we found that scanning an illuminated AFM tip over a substrate, locally suppresses the laser-induced deposition of silver.

P22-02

Additional and correction patterning of resist layer using scanning probe lithography, Jun Taniguchi, Takao Inoue and Toshihiko Ochi*, Tokyo University of Science, *Sumitomo Precision Products CO., LTD.

From the viewpoint of through-put, scanning probe lithography (SPL) should focus on delineation of fine pattern, thus, additional and correction patterning of sub-micro order patterned resist is promising use application. As a result, additional 70 nm patterning and correction writing were possible usin SPL.

P22-03

Automated position corrections for Atomically Precise STM lithography of Si(001):H, Justin Alexander, Joshua Ballard, Ehud Fuchs, James H. G. Owen, John N. Randall, James R. Von Ehr, Zyvex Labs

We are developing a process for automated atomically-precise lithography using an STM tip on the H-terminated Si(001) surface. Coupling a patterned fiducial mark with the crystallography of the Si(001)-H surface1 enables automated position corrections to be incorporated into more complex manufacturing processes.

P22-04

SPM Local Oxidation and In-situ Characterization Using AFM Probes in Multiple Modes, Weihua Hu, James Bain, David Ricketts, Carnegie Mellon University

In this work, we demonstrate the successful implementation of a compliant AFM probe in Scanning probe microscopy(SPM) tip-based nanofabrication using multiple modes: contact-AFM mode for imaging and for coarse oxide feature writing in an insulating field, STM mode for fine feature oxide writing and conductive AFM mode for in-situ electrical characterization.

P22-05

Fabrication of nano structures for Dimensional Metrology and Device Applications, Pradeep Namboodiri, Kai Li, Joseph Fu, Gheorghe Stan and Richard Silver, National Institute of Standards and Technology

Fabrication of structures from an atomically precise patterned surface by STM will be presented. Silicon surfaces with pre fabricated fiducial marks are subjected to high temperature processing in UHV to form ordered step terrace patterns. The surfaces are then patterned using STM tip and subjected to oxidation/RIE process.

EIPBN Abstracts