Section | Abstract and Authors |
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1A-1 Plenary |
Nanostructure Incorporation in Analytical Systems, We have investigated incorporation of nano-scale tubes, fibers, apertures, and other structures into fluidic systems, and linking these to electrical, optical or mechanical signal transduction. These approaches can be used to investigate molecular manipulation and detection. They also allow study of chemical and biochemical reactions at the individual molecule level. |
1A-2 Plenary |
Nanoscale Chemical Patterning, We exploit our ability to control self- and directed assembly at the sub-nanometer scale in order to create nanoscale chemical patterns, as well as to extend and to enhance soft and hybrid lithographies. The interactions between molecules can be tailored, controlled, and directed. |
1A-3 Plenary |
Applying Lessons From Atom-Scale Science To Develop True Single-Atom Sized Electron And Ion Sources, The atom-scale crafting of nano-tips will be described and directly illustrated. The talk will conclude with a description of our current effort to realize Gabor's dream of a point-projection microscope capable of atom-resolved, element specific, tomographic imaging of nano-structures. |
1A-4 Plenary |
Information on a Small Scale: The Power of Nanophotonics, This talk will illustrate some of the opportunities available with nanophotonic structures formed in semiconductor materials |
1A-5 Plenary |
How Will We Manufacture at the Nanoscale?, How long can exponential reduction in critical feature size be sustained? The answer will depend on the existence of strong economic drivers as well as on technical feasibility. I briefly survey the emerging devices and applications -- the economic drivers -- as well as recent exciting scientific and technical progress in nanopatterning. |
2A-1 Directed Block Copolymer Self Assembly |
(Invited ) Directed Polymer Self-assembly for Lithography Application, Directed self-assembly (DSA) which combines lithographically defined substrates and self-assembled polymers has been considered as a potential candidate to extend lithography. This paper discusses our studies on DSA of block copolymers which generates uniform nanometer-scale features with higher spatial resolution, precise placement and improved pattern quality. |
2A-2 Directed Block Copolymer Self Assembly |
Pathways For Implementation Of Block Copolymer Lithography In Nanomanufacturing, Here we demonstrate a new technique called molecular transfer printing (MTP) that allows us to create, transfer, and easily replicate chemical patterns using block copolymers. MTP addresses a major risk in the implemenation of directed assembly and block copolymer lithography in manufacturing - risk and expense of defining chemical prepatterns by electron beam or EUV lithography. |
2A-3 Directed Block Copolymer Self Assembly |
Controlled Self-Assembly Of Linear Structures For Nanoscale Device Fabrication, We present a promising approach to high-resolution device manufacturing with high throughput. This approach allowed us to control the ordering and local orientation of line-forming block copolymers into zig-zags and meander structures using a sparse array of dots and dashes made by electron-beam lithography. |
2A-4 Directed Block Copolymer Self Assembly |
We present long-range ordering of PS-PDMS block copolymers with different morphologies, which can be systematically tuned using a solvent-vapor treatment technique. The self-assembled patterns are utilized for making various sorts of nanostructures such as nanoscale lines, rings, dots, and antidots made of conducting polymers or metals, with sub-30 nm period. |
2A-5 Directed Block Copolymer Self Assembly |
We demonstrate that pattern density of lithographically defined template can be multiplied by a factor of 9 by chemically directed self-assembly of cylinder forming PS-b-PMMA block copolymer. Thickness of PS-b-PMMA film played an important role for successful interpolation of the cylinders between chemically patterned lattices to achieve high-order density multiplication. |
2A-6 Directed Block Copolymer Self Assembly |
We demonstrate the generation of two morphologies: closepacked rings, and square arrays of dots. Moreover, since the features are made from an organometallic block, they have a high etch contrast and etch resistance compared to the organic blocks of the triblock terpolymer, making them useful for pattern transfer. |
2B-1 NanoImprint Process |
Imprint And Pattern Transfer Of Silica Sol-Gel Resist: A Powerful Nanofabrication Approach, Soft nanoimprinting of inorganic sol gel materials is reported and we demonstrate the potential pattern transfer and multilevel structures fabrication. |
2B-2 NanoImprint Process |
Novel Fabrication of 3D Combined Nanoscale and Microscale Structures Using Functionalized SPEL, Here we propose and demonstrate a new approach (Functionalized self-perfection by liquefaction) to the fabrication of certain 3D combined nanoscale and microscale structures, which has only a few yet simple steps, hence greatly reducing the fabrication steps, time and cost. |
2B-3 NanoImprint Process |
Self-Limited Self-Perfection by Liquefaction for Sub-20nm Trench/Line Fabrication, We proposed and demonstrated a new approach to pressed self-perfection-by-liquefaction (P-SPEL). The new method is a self-limiting, hence eliminating the critical need to precisely control the gap between the top pressing plate and the substrate. We achieved 20 nm wide trenches and lines from initial 90 nm trenches and 140% improvement in line edge roughness. |
2B-4 NanoImprint Process |
(Invited) Nanometer-Scale Polymer Flow During Nanoimprint Lithography, Polymer squeeze flow governs the dynamics of nanoimprint lithography. We have made stress-strain measurements of nanometer-scale polymer squeeze flow using instrumented nanoindentation. Measurements on high molecular weight, entangled polystyrene films showed thin polymer films being softer than expected and high molecular weight films softer than low molecular weight films. |
2B-5 NanoImprint Process |
Dimension Reduction Of Nano-Gratings By Controlled Melting Of Patterned Polymer Mask, We develop a simple process of dimension reduction of imprinted line gratings to single-digit nanometer regime by controlled melting of polymer lines to reduce the slope of the grating sidewall, followed by oblique angle metal evaporation and plasma etching. This method provides a low cost and low temperature process to shrink pattern dimensions. |
2C-1 Electron Beam Lithography Tools |
Design for EB(DFEB), a Novel Approach to EBDW Throughput Enhancement For Volume Production, We report the new concept of DFEB which enables much higher shot count reduction rate of more than 10 times. Starting with RTL DFEB customized net-list is synthesized with DFEB customized library and optimized to minimize the estimated shot count, while keeping the circuit performance. |
2C-2 Electron Beam Lithography Tools |
Self-Powered Electron Lithography, Electron-beam exposure has high resolution, but suffers from the low throughput during serial beam writing. We have designed and experimentally demonstrated a low-cost Self-Powered-Electron-Lithography (SPEL), which utilizes the spontaneously emitted energetic electrons from beta-emitting radioisotope thin-films. This approach enables massively parallel e-beam lithography, without limit on concurrently exposed surface area. |
2C-3 Electron Beam Lithography Tools |
Carbon Nanotube Field Emitters for Micro-Column Scanning Electron Microscopy and Nanolithography, We demonstrate a MEMS technique for the fabrication of an individual carbon nanotube field emission electron gun for high resolution electron microscpopy and lithography applications. Our technique resolves key issues which have previously hindered micro-column development. This approach enables precise system component alignment while improving the thermal and mechanical properties. |
2C-4 Electron Beam Lithography Tools |
This is based upon the "Amino-propyl-triethoxy-silane (APTES) on aluminum fiducial grids for spatial-phase-locked electron-beam lithography" for metrology. |
2C-5 Electron Beam Lithography Tools |
Reversible Shape Changes Of The End Facet On Schottky Electron Emitters, Schottky emitters are predominant in today's focused electron beam equipment. The exact geometry of the tip (-1µm diameter) affects the probe current - probe size relation of such systems, because it determines the field enhancement at the emitting surface. By monitoring the emission pattern it was found the geometry of the end facet is a function of the operating conditions. |
2C-6 Electron Beam Lithography Tools |
While the achievable overlay using traditional registration hardware and software is ultimately limited by the quality of the registration marks, this novel image processing technique has been used successfully to register to marks changed significantly by device process steps between overlay critical exposure levels. |
2D-1 Optical Lithography |
Line Edge Roughness Contribution from Mask to Wafer, In this paper, we will present our study of LER transfer from mask to wafer by understanding the LER transfer function as a function of spatial frequency. |
2D-2 Optical Lithography |
(Invited) Overcoming the Patterning Challenges of Extreme K1 Imaging, Collectively, double-patterning is a set of techniques that use conventional optical lithography to reduce the effective pitch with the use of innovative processes. In particular, pitch-split double exposure techniques are under development as are self-aligned double patterning techniques. Overlay and design-sensitivity are key challenges for double-patterning technology. |
2D-3 Optical Lithography |
Tailoring Anisotropic Wetting Properties on One-Dimensional Nanopatterned Surfaces, Surface modification by plasma treatment with CHF3 or O2 was used to tailor one-dimensional nanopatterned surfaces exhibiting strongly anisotropic wetting between ultrahydrophic and ultrahydrophilic with a decreased anisotropy without changing the physical pattern profiles. The recovery of the anisotropic wetting was achieved by spin-coating thin polymer overcoat. |
2D-4 Optical Lithography |
Periodic structures are required in a variety of applications including photonic crystals. Coherent-Diffraction Lithography (CDL), a mask-based interference lithography approach, utilizes the well-known Talbot effect to replicate periodic patterns. We describe developments of CDL permitting replication of a phase mask on a substrate at a gap greater than 50 microns. |
2D-5 Optical Lithography |
Dual Wavelength Interference Lithography, A dual wavelength interference lithography system has been developed for use with Absorbance Modulation Optical Lithography (AMOL). The system is intended to write gratings and other patterns with periods below the conventional diffraction limit and to test materials for use with AMOL. |
P-1A-1 Optical Lithography Session Posters |
Characterization Of Pattern Placement Error For Sub-40-Nm Memory Devices, Pattern placement error (PPE) is caused by lens aberration and telecentric error. In this paper, the impact of lens aberration and telecentric error on PPE is characterized for sub-40-nm memory devices so that the size of mark segmentation is optimized as a function of illumination condition, through-pitch behavior. |
P-1A-2 Optical Lithography Session Posters |
Sidewall Spacer Double Patterning Technique With Reduced Process Complexity, The study explores a double patterning process scheme utilizing a resist freeze process to simplify the sidewall spacer approach by replacing the CVD-CMP-etch-stripping process with a three-step vapor phase reaction (VPR)-RIE-development process. Repeating the process with an interdigitating mask allows for patterns between two groups of spacers, leading to higher harmonic patterning. |
P-1A-3 Optical Lithography Session Posters |
Optimization Of Multilayer Absorptive Antireflection Coatings For Hyper-NA Optical Lithography, |
P-1A-4 Optical Lithography Session Posters |
Stitching Periodic Submicron Fringes By Utilizing Step-And-Align Interference Lithography (SAIL), This paper demonstrates a method to form continuous submicron gratings by exposing successively a unit area filled with interference fringes. Two neighboring exposed areas were stitched together by utilizing step-and-align interference lithography (SAIL) to yield seamless gratings. |
P-1A-5 Optical Lithography Session Posters |
Combined Near-Field Lithography And Reversal Imprint For High Resolution Patterning In Wafer Scale, We have developed a novel high resolution lithography technique by combining near field lithography with reversal imprint technique. This new technique is capable of cost effective patterning in wafer scale and with potential of application in industry for mass production. |
P-1A-6 Optical Lithography Session Posters |
Influence Of Polarization On Absorbance Modulated Sub-Wavelength Grating Structures, We use the finite element method to investigate the effect of the polarisation of the incident field on a thin layer having with modulated absorbance. The impact of the results on the use of the layer in a lithography system is considered. |
P-1A-7 Optical Lithography Session Posters |
A Dry-on, Dry-off, Long Wavelength Photoresist for NanoPlasmonic Field Metrology and Lithography, We have developed a negative tone photoresist which works across the ultraviolet, the blue, and the red regions of the electromagnetic spectrum. The resist is applied via thermal evaporation and is developable with heat. Applications for this resist exist in nanoplasmonic metrology and lithography. |
P-1B-1 Extreme Ultraviolet Lithography Session Posters |
Carbon Nanotube-confined MnO2/C-MEMS Nanostructures for On-Chip Electrochemical Capacitors, We develop a novel method combining both “top-down” and “bottom-up” to fabricate integrated carbon nanotube (CNTs)/C-MEMS 3D nanostructures for on-chip supercapacitors. To achieve even improve the capacitance, MnO2 nanoparticles are introduced into CNT channels. This CNT-confined MnO2 composites show high specific capacitance. |
P-1B-2 Extreme Ultraviolet Lithography Session Posters |
Iterative Procedure For In-Situ Optical Testing Of EUV Exposure Tools With An Incoherent Source, We propose an iterative procedure for optical testing of EUV tools with an incoherent source. The simulation data utilizes the novel SOCS algorithm for fast imaging calculations. The optimization is performed using an adapted simulated annealing algorithm. |
P-1B-3 Extreme Ultraviolet Lithography Session Posters |
We developed a method in which low energy ion beam( 0.3 or 0.5 keV)was used for smoothing the ULE surface after figuring the substrates with fine ion beam with energy of 5 keV. Result shows the smooth surface HSFR is 0.10±0.01 nm rms. |
P-1B-4 Extreme Ultraviolet Lithography Session Posters |
we suggest an optimal structure of capping layer for EUVL to minimize mask shadowing effect without a loss of image contrast. Phase shift concept would be a possible solution to improve image contrast with thinner absorber stack. |
P-1B-5 Extreme Ultraviolet Lithography Session Posters |
Low Energy Ar+ Ion Beam Machining Of Si Thin Layer Deposited On A Zerodur® Substrate For EUVL Optics, We carried out experiments on ion beam machining of Si deposited Zerodur® substrates by Ar+ ion beam with energy of less than 3 keV and evaluate the HSFR of the substrates and gets 0.10nm rms. |
P-1B-6 Extreme Ultraviolet Lithography Session Posters |
Using Aberration Test Patterns To Optimize The Performance Of EUV Aerial Imaging Microscopes, We will describe the use of aberration test patterns to quantify the aberrations of the AIT, an EUV wavelength zoneplate microscope, in order to optimize its optical performances in terms of contrast, measurement repeatability and image resolution. |
P-1B-7 Extreme Ultraviolet Lithography Session Posters |
Characterization of EUV-Deposited Carboneous Contamination, Carboneous contaminations by EUV light from SR have been investigated by various analytical techniques, including GIXR, ellipsometry, TEM, HR-RBS/HR-ERDA, EELS, etc. It was found that the contamination mainly consisted of carbon but it also contained hydrogen with half the number of carbon atom and the ratio of hydrogen to carbon decreases with the depth. |
P-1B-8 Extreme Ultraviolet Lithography Session Posters |
EUV Pattern Defect Detection Sensitivity Based On Aerial Image Linewidth Measurements, The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a prototype zoneplate microscope dedicated to mask inspection. Using aerial image measurement data from a dense line array, we investigate the current defect detection sensitivity of the AIT. |
P-1C-1 Masks Session Posters |
Diffraction Grating Fabrication On 100nm Silicon Membrane For EUV Interferometry, Processes have been developped to fabricate ultra thin silicon membrane of 100nm thick without any deformation (less than 1nm). Onto these membranes we succeeded in processing diffraction grating from 30 to 200nm half pitch by, Ebeam lithography and Reactive Ion Etching, optimized for EUV interferometry, i.e diffraction efficiency of 25% versus 7% usually achieved. |
P-1C-2 Masks Session Posters |
Pattern Placement Error Due To Resist Charging Effect At 50kv E-Beam Writer, We present the charging effect in FEP-171 resist at e-beam writer with accelerating voltage of 50kV and its effect on pattern placement error of photomask |
P-1D-1 Modeling and Computer Aided Design Session Posters |
Estimation of Resist Profile Using Layer-Based Exposure Modeling, A simulation approach to estimating the remaining resist profile often leads to a significant error due to an inaccurate PSF, exclusion of development parameters, etc., and also requires extensive computation. An estimation method which can overcome such drawbacks and reduce computation time by orders of magnitude has been developed. |
P-1D-2 Modeling and Computer Aided Design Session Posters |
Model Based OPC Runtime Saving With Multi-Segment Solver, A novel method of computing the signal change in MBOPC process with MSS turned on is proposed, which can save the MBOPC runtime significantly. In the new method, the kernel sensitivity of the calibrated model is analyzed and only the most sensitive kernels are picked for computing the mask perturbation. |
P-1D-3 Modeling and Computer Aided Design Session Posters |
Fast Resist Development Model for Photolithography Process Simulation, In this study a new method for fast resist development process simulation proposed. This method takes into account the combination of all resist development dependant parameters. The method is based on the resist response function of exposure and development, in both the lateral and longitudinal directions. |
P-1D-4 Modeling and Computer Aided Design Session Posters |
Wafer Topography Proximity Effect Modeling and Correction for Patterning the Implant Layer, We propose an approximate simulation method that is capable of capturing wafer topography proximity effect in IC device manufacturing and fast enough to be used in full chip mask synthesis. We demonstrate the accuracy of the method and its use in implant layer mask synthesis with numerical examples. |
P-1D-5 Modeling and Computer Aided Design Session Posters |
Coarse-Grain Simulation Of Resist Flow In SFIL, A coarse-grain approach is presented, which make it possible to simulate SFIL process adequately even using standard Personal Computers. The simulation results substantiate the implementation of the viscous flow simulation to achieve optimal dispensing. This dispensing provides uniform filled areas and a homogeneous residual layer thickness in SFIL. |
P-1D-6 Modeling and Computer Aided Design Session Posters |
IMPRINT Software: Stamp Bending Compensation, Residual Layer And Cavities Fullness Prediction, In this work, we review all our results on the use of the IMPRINT software for the residual layer and cavities fullness prediction and for the stamp bending optimization. |
P-1D-7 Modeling and Computer Aided Design Session Posters |
Design Specific Variation In Via/Contact Pattern Transfer - Full Chip Analysis., A novel model-based algorithm provides a capability to control full-chip design specific variation in pattern transfer caused by via/contact etch processes. It can be used also as a tool for etch process optimization to capture the impact of a pattern density variation on the feature shape distortion. |
P-1E-01 Ion Beam Lithography and Processing Session Posters |
Large Area Direct-Write Focused Ion-Beam Lithography With A Dual-Beam Microscope, We have investigated the use of FIB direct-write lithography for large area patterning in an FEI Nova NanoLab 600 Dual Beam microscope. Key issues with regard to configuration, process parameters and procedures have been addressed. We present stitching error characterization and the use of offset patterning and in-field registration marks. |
P-1E-02 Ion Beam Lithography and Processing Session Posters |
Slow Highly Charged Ions As A New Tool For Surface Nanostructuring, The impact of individual slow highly charged ions can lead to surface modifications (nanohillocks, - pits, craters) with nanometer dimensions. For possible applications in nanofabrication this new method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying layers. |
P-1E-03 Ion Beam Lithography and Processing Session Posters |
We have conducted our research on both ripple or nano pattern formation and finally smoothing of rippled or nano patterned surface by low energy ion beam irradiation. Result shows patterned surface can be smoothed up to 0.11 nm rms. |
P-1E-04 Ion Beam Lithography and Processing Session Posters |
Beam Induced Deposition Of Metal Using A Helium Ion Microscope, An ORION helium ion microscope has been used along with an OmniGIS unit to deposit tungsten on silicon substrates while exploring a variety of controllable parameters such as dose rate, dwell, gas pressure, etc. |
P-1E-05 Ion Beam Lithography and Processing Session Posters |
We present a novel process for fabricating silicon nanostructures with the lateral dimensions of < 50 nm and high aspect ratio. The process consists of masking a silicon substrate using a focused gallium ion beam (FIB) and forming structures using a cryogenic deep reactive ion etching (DRIE). |
P-1E-06 Ion Beam Lithography and Processing Session Posters |
Ion Beam Sharpening Of Diamond Tools Having Small Apex Angle Without Facet And Ripple Formation, We have developed a new sharpening method of diamond tools having small apex angle without facet and ripple formations. Also, a simulation method has been developed for predicting the profile changes of diamond tools during ion beam machining at fixed tilt angle. |
P-1E-07 Ion Beam Lithography and Processing Session Posters |
NIL Stamp Modification Utilizing Focused Ion Beams, The fabrication of NIL masters with features in the sub-µm range is currently a bottleneck of the NIL technology. Focused ion beam technology is employed to modify prestructured NIL stamps. The capabilities and limitations of FIB as repair technology for NIL stamps will be discussed. |
P-1E-08 Ion Beam Lithography and Processing Session Posters |
A practical approach for reducing the size variation in multi-generational aperture array masks is described and experimentally validated. |
P-1E-09 Ion Beam Lithography and Processing Session Posters |
Conducting FIB Milled Nanowires, A FIB is used to mill conductive silicon nanowires on prefabricated SOI chips. Nanowires with designed width of 100nm, 200nm and 400nm and length of 1000nm, 2000nm and 4000nm respectively have been milled. The scope of the work is to mill prototype electromechanical or electrical nanostructures. |
P-1E-10 Ion Beam Lithography and Processing Session Posters |
The Promises Of Graphene Structures Nano-Patterned Using High Resolution Focused Ion Beams, In this presentation we aim at presenting our preliminary investigations in manipulating ultra-thin graphene sheets (2-3 nm thick) subsequently sculpted using a high resolution FIB technique into graphene nanostructures in the nanometre range. |
P-1E-11 Ion Beam Lithography and Processing Session Posters |
In this study, the scanning speed dependencies of growth mode of carbon nanowire growth on Si substrate were evaluated. As a result, we found that FIB-CVD have the hopping growth mode. Growth characteristics on the hopping growth mode will be reported in detail. |
P-1E-12 Ion Beam Lithography and Processing Session Posters |
We demonstrated micro fabrication of planar-type structures along ab-plane and c-axis, on thin graphite layers using focused ion beam. We investigated the transport characteristics of R-T and I-V for bare graphite flakes, planar-type structures and c-axis stacks. We observed a peculiar non-linear transport behavior for above structures and discussed briefly. |
P-1F-01 Electron Beam Lithography and Processing Session Posters |
Study On Writing Strategy For Multiple Electron-Beam Lithography At 5keV, The European project MAGIC aims at the design of a multiple electron-beam machine. Involved into this project, Mapper lithography developes a 5kV beta platform that will be available at Leti. This work aims at defining a stable and robust process at 5kV, to evaluate the tool from Mapper. |
P-1F-02 Electron Beam Lithography and Processing Session Posters |
Microcolumn Design For A Large Scan Field And Pixel Number, An electron optical design to address a large number of pixels while keeping the pixel size, i.e. the beam size, as small as possible is presented. Less than 1 cm3 in size, it features a 40 mm working distance and a scan field of more than 7x7 mm2. |
P-1F-03 Electron Beam Lithography and Processing Session Posters |
Slow blanking speed is one of the potential bottlenecks for the system speed in single pixel, probe forming systems. Simulation and experimental results will show that the exposure time of an e-beam lithography system has to be much larger than the rise time of the blanking voltage in order to achieve high pattern fidelity. |
P-1F-04 Electron Beam Lithography and Processing Session Posters |
Operation And Performance The CNSE Vistec VB300 Electron Beam Lithography System, A Vistec VB300 system has been installed and accepted into the CNSE 300mm process line. The VB300 installation is fully compatible with the 300mm process capability at CNSE and will enable a varitey of advance process integration experiments for early post CMOS learning. Results of the acceptance tests are presented along with results of early process experiments. |
P-1F-05 Electron Beam Lithography and Processing Session Posters |
Off-Axis Emission Properties for the Schottky Electron Source, The critical electron source properties: energy spread, brightness, and angular intensity of ZrO/W Schottky source as a function of emission angle will be presented. Analysis of the Boersch contribution to the energy spread will be discussed. |
P-1F-06 Electron Beam Lithography and Processing Session Posters |
Electron Reflection from Metal Targets, We describe a technique utilizing a photocathode source which allows comparison of the electron reflection from different metal targets and may be applicable to the design of e-beam lithography tools like REBL. The CsBr based photocathode utilized provides an energy spread of <0.9 eV. Experimental results will be presented. |
P-1F-07 Electron Beam Lithography and Processing Session Posters |
Versatile Applications Of 80 Kv Electron Beam Lithography : From Nanotubes To Biochips, Thales Research and Technology has been involved in nanoscale-device fabrication for a variety of applications. We use a electron beam lithography from Nanobeam Ltd operating at 80 kV with 3-nm beam size. We will present our results in electron source, RF NEMS switches, biological sensors and photonic crystal applications. |
P-1F-08 Electron Beam Lithography and Processing Session Posters |
Step Width Adjustment in Fabrication of Staircase Structures, Due to the fact that resist development process is isotropic, the step width in a staircase structure fabricated by grayscale e-beam lithography can be substantially different from the target one. A practical scheme for adjusting step widths has been developed, which minimizes the computational requirement by avoiding a complete resist development simulation. |
P-1F-09 Electron Beam Lithography and Processing Session Posters |
(Invited) Design Verification for sub 70 nm DRAM nodes via Metal Fix using E-Beam Direct Write, |
P-1F-10 Electron Beam Lithography and Processing Session Posters |
Ebeam Lithography for Platform of Multiple SET Architectures, In the European project AFSID (Atomic Functionalities in Silicon Devices) we propose to build a silicon platform enabling the comparison of single gate MOS-FET as a SET and other architectures (using side gates, constrictions…), and to study coupled SET. This platform composed of sub-30nm architectures is achieved by ebeam lithography thanks to the use of datatypes or proximity effect corrections. |
P-1F-11 Electron Beam Lithography and Processing Session Posters |
Our technique for EBL focusing on transparent substrates avoids problems associated with metal-on-resist coatings by estimating substrate height from a plane calculated from height data points measured from perimeter metal. We verify the effectiveness of this method with nano-pores and gratings in ZEP520A resist on ITO/glass substrates. |
P-1F-12 Electron Beam Lithography and Processing Session Posters |
Application of C60 to Improve the SPLEBL Reference Signal, This paper deals with the fabrication of a fullerene C60 grid to be used as the fiducial grid in the Spatial Phase Locked Electron Beam Lithography system to improve the signal to noise ratio and increase the accuracy of the system. |
P-1F-13 Electron Beam Lithography and Processing Session Posters |
This study presents optimized algorithms for e-beam proximity effects which enable the creation of both fast and accurate full-chip process models for EBL. Model fits for various EBL effects will be demonstrated. Algorithms used to create these fits will also be discussed. |
P-1F-14 Electron Beam Lithography and Processing Session Posters |
Geometry Assisted PEC For Electron Beam Direct Write Nanolithography, This paper proposes the combined use of serifs and proximity effect correction in e-beam lithography to achieve structures with sharp corners. We have been able to pattern in HSQ resist squares and triangles down to 25 nm dimensions with corners that have radii of curvature of 5 nm. |
P-1F-15 Electron Beam Lithography and Processing Session Posters |
Spatial Dose Control for Fabrication of Saw-tooth Structures, We are developing an effective and practical scheme for determining the spatial dose distribution, given a periodic saw-tooth structure, which can lead to the target structure via electron-beam grayscale lithography. |
P-1F-16 Electron Beam Lithography and Processing Session Posters |
Application of Neural Network to E-beam Dose Control for 3-D Proximity Effect Correction, Sequential processing of regions in 3-D proximity effect correction has a fundamental limitation due to the recursive effect and the inherent characteristic of 3-D correction problem, i.e., over-determined. A neural network has been shown to be effective in overcoming the limitation. |
P-1F-17 Electron Beam Lithography and Processing Session Posters |
The impact of curve-fitting algorithms and merit functions to patterning prediction accuracy is characterized by simulating one-dimensional grating layouts with various pitches and a representative two-dimensional six-transistor-SRAM layout. The proposed method out performs the conventional in in various cases. |
P-1F-18 Electron Beam Lithography and Processing Session Posters |
Robust, Efficient Grating Couplers for Planar Optical Waveguides Using No-PAG SU-8 EBL, SU-8 with no photoacid generator is highly sensitive to electron beam exposure, yielding a new resist option for many applications. We present a simple negative resist fabrication approach to optical gratings on Ta2O5 using SU-8 as the grating material, thereby minimizing process handling on the sensitive Ta2O5 material. |
P-1F-19 Electron Beam Lithography and Processing Session Posters |
Spin ice arrays of CoFeB were fabricated by EBL, sputtering and lift off. Accelerating voltage and developer temperature were varied to tailor the resist profile for improved lift off. |
P-1F-20 Electron Beam Lithography and Processing Session Posters |
Fabrication of overhanging triangular gratings, We have developed a novel fabrication process for overhanging triangular gratings. To achieve the desired structure we used electron beam lithography, ion beam etching and UV replication. |
P-1F-21 Electron Beam Lithography and Processing Session Posters |
Fabrication Of High Density, High-Aspect-Ratio Polyimide Nanofilters, A novel method for fabrication of high porosity polymer nanofilters with smooth and straight pores is demonstrated. Pore size, density, and shape can be predetermined with a high degree of precision. We report polyimide filter with 200-nm pores and 400-nm periodicity. Aspect ratios of 40 or more have been achieved. |
P-1F-22 Electron Beam Lithography and Processing Session Posters |
15-nm Nickel Zone Plates Achieved Using Cold-Developed Electron-Beam Patterned ZEP7000, We present 50-nm thick soft x-ray nickel zone plates with 15-nm outermost zone width. This was achieved with a process including cold-developed electron-beam patterned ZEP7000. For zone plates, this represents the highest reported resolution obtained by a single e-beam exposure. |
P-1F-23 Electron Beam Lithography and Processing Session Posters |
Resist Residues and Transistor Gate Fabrication, In this paper we investigate the formation and removal of resist residues with the main objective to improve the reliability of transistor gate fabrication using electron beam lithography. We examine residues in both exposed and non exposed areas. |
P-1F-24 Electron Beam Lithography and Processing Session Posters |
Process Optimization Of Electron Beam Lithography Using High Resolution Resist TEBN-1, We present a study on the effects of developing condition on the sensitivity of the negative EB-resist 'TEBN-1' which can draw under 10nm wide line. In this study, we found that the developer characteristic contributes significantly to increasing sensitivity. |
P-1F-25 Electron Beam Lithography and Processing Session Posters |
A low cost liquid phase deposition method to coat dielectric substrates with uniform electron beam sensitive polymer films (PMMA, MMA, P(MMA-co-EA)) is presented. Flat and non-flat surfaces having pre-forms up to 40 micrometers are coated with this method and patterned with nanostructure by using high-voltage electron beam. |
P-1F-26 Electron Beam Lithography and Processing Session Posters |
Contrast Enhancement Behavior of Hydrogen Silsesquioxane (HSQ) in a Salty Developer, This study reports on several Mix & Match processes for the integration of E-Beam lithography into the optical litho process flow of Qimonda's 70 nm and 58 nm DRAM nodes. We show the capability of EBDW for quick and flexible design verification. |
P-1F-27 Electron Beam Lithography and Processing Session Posters |
Lift-off of Sub-15-nm Hydrogen Silsesquioxane (HSQ) Structures, In this work, we demonstrate lift-off of hydrogen silsesquioxane (HSQ) structures patterned by scanning electron beam lithography (SEBL). We propose a process which allows for reliable and reproducible lift-off of complex and arbitrarily shaped HSQ features down to resolutions of 15nm half-pitch. |
P-1F-28 Electron Beam Lithography and Processing Session Posters |
Ultra-Low Dose Exposure of HSQ using Electron Beam Lithography, Commonly used resist XR-1541 has a relatively low sensitivity using the conventional developing process. Using nonaqueous developers showed a drastic increase in sensitivity, with an onset dose less than 10uC/cm2, for the e-beam resist, which significantly decreases the exposure time required to pattern the resist. |
P-1F-29 Electron Beam Lithography and Processing Session Posters |
Low Dose Patterning of HSQ For Use As A Silicon Etch Mask, Patterning of hydrogen silsesquioxane (HSQ), using electron beam lithography, typically requires a high clearing dose and therefore a long exposure time. In this work, we show that HSQ exposed to a dose much less than the clearing dose can be used as a silicon etch mask. |
P-1G-01 Maskless Lithography Session Posters |
STM-induced Surface Modification with Reactive Ion Etch Pattern Transfer, This presentation covers recent research in silicon surface preparation and fabrication methods based on STM surface modification. Results using wet chemical-prepared silicon surfaces showed that features smaller than 10 nm could be patterned in a UHV environment with subsequent pattern transfer using RIE etching. Current work is focused on extending this technique to the atomic domain with UHV processes. |
P-1G-02 Maskless Lithography Session Posters |
Gas Dosing for Tip Based Nano-Fabrication Processes, Tip based nanofabrication uses AFM or STM tips to create localized fields and electron beams to make high precision nanostructures. A gas phase precursor provides the material for the structure. Direct Simulation Monte Carlo calculations were used to design a gas dosing system. The calculated results are compared to experiments. |
P-1G-03 Maskless Lithography Session Posters |
We direct write sub-5 nm hafnium diboride nanostructures onto H-Si (100) sufaces using an UHV-STM at room temperature. STS data confirm that the HfB2 nanostructures deposited are purely metallic. To our knowledge this is the first demonstration of sub-5 nm metallic nanostructures in a STM/CVD experiment. |
P-1G-04 Maskless Lithography Session Posters |
Multiplexing and Transport Phenomena in Dip-Pen Nanolithography, Using a piezo-controlled inkjet printer to dispense picoliter volumes of ink to tips in an array, we have developed multiplexed, massively parallel dip-pen nanolithography (DPN). Additionally, we have developed an understanding and control over transport rates associated with 16-mercaptohexadecanoic acid on gold substrates. |
P-1G-05 Maskless Lithography Session Posters |
High-speed, Sub-15 nm Feature Size Thermochemical Nanolithography, Nanolithography has been recognized as an essential component of future technologies. We have developed a novel thermochemical nanolithography technique based on atomic force microscopy. This technique offers sub-15 nm spatial resolution, mm/s writing speed, and high diversity of chemical patterning functionalities. |
P-1G-06 Maskless Lithography Session Posters |
Thermal Dip Pen Nanolithography was used to deposit a range of polymer-nanoparticle composites. Careful control of the surface chemistry allows the particles to be dispersed through the polymer or to be focused into a line as narrow as 10 nm. |
P-1G-07 Maskless Lithography Session Posters |
Residual gas contamination in electron microscopy is frequently experienced as severe obstacle e.g. with imaging or electron beam induced processing. A quantitative investigation as well as a reproducible evaluation of the degree of contamination will be presented. Finally, methods for contamination removal and avoidance will be discussed. |
P-1G-08 Maskless Lithography Session Posters |
Pillar Growth Rate Dependences in Ion-Beam-Induced Deposition, Ion-beam-induced deposition (IBID) is a powerful tool for prototyping 3D nanostructures, such as pillars. We demonstrate that the growth rate of IBID pillars can be greatly enhanced with increasing the precursor residence on the substrate, by adjusting variable IBID parameters, as substrate temperature, ion beam dwell time and refreshment time. |
P-1G-09 Maskless Lithography Session Posters |
Focused Electron-Beam-Induced Deposition Of 3 Nm Dots In A Scanning Electron Microscope, We report a world record in the smallest structure written by electron beam induced deposition in a scanning electron microscope : a 3 nm FWHM nanodot, measured directly in the same microscope. |
P-1G-10 Maskless Lithography Session Posters |
The Roles of Secondary Electrons and Sputtered Atoms in Ion-Beam-Induced Deposition, Ion-beam-induced deposition (IBID) is a powerful tool for prototyping nanostructures. To understand IBID mechanisms, the separate contributions of sputtered atoms and secondary electrons in IBID have been investigated by comparing the measured yields of deposition, sputtering and secondary electron as functions of ion beam incident angle and energy. |
P-1G-11 Maskless Lithography Session Posters |
Gas Assisted Focused Electron Beam Induced Etching of Alumina, This study investigates Focused Electron Beam Induced Etching (FEBIE) for removal of foreign particles on patterned EUV masks. As potential contaminants, particles of Aluminum oxide (alumina, Al2O3) and hydrocarbons (including PMMA and polystyrene) have been successfully removed, leaving the underlying layers undamaged. |
P-1G-12 Maskless Lithography Session Posters |
Formation Of High-Aspect Ratio Silicon Nanopillars Using Deep Reactive Ion Etching, Formation of high-aspect ratio nanopillars in silicon (“black silicon”) have numerous potential applications. Paper presents a method for black-silicon formation by Bosch process using inductively coupled plasma and electroless deposited Ni-P films as hard mask. After etching, formation of very dense arrays of vertical silicon pillars (aspect ratio up to 100:1) in areas not protected by hard mask was observed. |
P-1G-13 Maskless Lithography Session Posters |
Direct Write Reliefs in Excess of One Micrometer on Chalcogenide Thin-Films Using Electron Beams, In this paper, we present experimental results of electron beam induced reliefs in amorphous GexSe1-x films deposited on silicon dioxide cladding layers with height in excess of one micrometer, thereby enabling flexibility in the realization of direct write optical waveguides. |
P-1G-14 Maskless Lithography Session Posters |
Measurements On The Electron Optical Properties Of A Multi-Electron Beam Source in a SEM Chamber, The Measurements on the electron optical properties of multi-electron beam source using a SEM chamber as experimental setup in which the focused beam serve as electron source is presented. |
P-1G-15 Maskless Lithography Session Posters |
High Density Submicron Features Using A Laser Pattern Generator And Double Patterning, Line and space patterns with periods ranging from 1.0 to 1.5 µm have numerous applications. To directly write such patterns using a 405 nm wavelength diode laser, the spatial distribution of energy absorbed in photoresist was carefully analyzed, and the double patterning technique, litho-etch, litho-etch was employed. |
P-1G-16 Maskless Lithography Session Posters |
The Influence Of Lithographic Parameters On EBID, We report the influence of a certain lithographic parameter on the shape of an EBID deposit. The corresponding effect (reduced size for higher number of loops at same accumulated electron dose) is discussed, interpreted and suggested as a general method to reduce the lateral size of EBID deposits. |
P-1H-01 Novel Imaging Technologies Session Posters |
A Multiple-Electron-Beam Imaging Technique For Surface Inspection, This paper presents a multiple-electron-beam imaging technique, which is able to simultaneously process images from an array of multiple scanned beams which either overlap or which strike the specimen in close proximity. |
P-1H-02 Novel Imaging Technologies Session Posters |
Precision Material Modification and Patterning with Helium Ions, The helium ion microscope (HeIM)is capable of milling and sputtering tasks. Advantages of a using helium ions are the extremely low sputtering rates and the small beam size. The HeIm is a precise direct fabrication tools for suitable materials and presents the possibility of better device fabrication with novel physical properties. |
P-1H-03 Novel Imaging Technologies Session Posters |
Embedded SiO2 nanosheets in PDMS using an alternative nanopatterning process., We propose a versatile, cost effective and simple way for rending the PDMS more funtionnal by embedding vertical nanosheets of SiO2 on its surface. The nanosheet width, which corresponds to the sidewall of the patterns, is defined during the oxidation of the silicon substrate, typically 200nm. |
P-1H-04 Novel Imaging Technologies Session Posters |
Multi-pass interlaced electron beam lithography patterning technique opened a new path to the high resolution x-ray zone plate fabrication. In this article, the impacts of overlay misalignment to the device optical performances such as resolution, depth of focus and astigmatism have been theoretically evaluated. |
P-1I-01 Nanoimprint Lithography Session Posters |
Impact Of Resist Shrinkages On De-Molding Process In Thermal and UV NIL, Impact of the resist shrinkage on the contact force to the mold side wall is simulated in various configurations of NIL systems. The contact force arises near the mold edge area and the amount depends on the residual thickness, free space of the resist flange and the mold width. |
P-1I-02 Nanoimprint Lithography Session Posters |
Release Force Reduction in UV-Nanoimprint By Mold Orientation Control And By Gas Environment, We implemented mold orientation control system in UV-nanoimpriner and investigated the impact on release force not only by inclined mold release but by environment gas. Averaged release force was reduced only by 20% by inclined mold release but was reduced to one third by pentafluoropropane used for bubble elimination. |
P-1I-03 Nanoimprint Lithography Session Posters |
Self-Assembly For The Definition Of Hierarchical Patterns In Thermal Imprint, Hierarchical polymeric patterns with < 50 width are fabricated via T-NIL and self-assembly of the polymer. In contrast to other approaches, here the sidewall of the cavities represents the guide controlling the self-assembly. |
P-1I-04 Nanoimprint Lithography Session Posters |
Imprinting with Revolving-belt for Effective and Efficient Replication of Microstructures, This paper proposes a novel method of imprinting with microstructured belt between two rollers for precision replication. The contact time between the master and the substrate is prolonged, starting from one roller through the flat belt to the other roller. This process allows complete and precision replication. |
P-1I-05 Nanoimprint Lithography Session Posters |
Rapid Thermal Imprint Of High-Aspect-Ratio Nanostructures, This paper introduces a rapid thermal imprint method for high-aspect-ratio nanostructures. A thin-film current heater located at the back of the mold and upper punch and the heater substrate as coolants realize the rapid heating and cooling, respectively. This method is useful for high throughput thermal nanoimprint. |
P-1I-06 Nanoimprint Lithography Session Posters |
We demonstrate large-area (4” wide) continuous imprinting of nanoscale structures (300nm linewidth) with greatly enhanced productivity by using a newly developed high-speed, 6”-capable roll-to-plate / roll-to-roll apparatus. In addition, an analytical model for predicting the residual layer thickness in dynamic roller imprinting has been developed. |
P-1I-07 Nanoimprint Lithography Session Posters |
This presentation identifies a lateral, buckling-like instability in line-space patterns fabricated by nanoimprint lithography. This instability occurs in high molecular mass polymers heated to elevated temperatures where their modulus is sufficiently reduced to allow distortions of the lines, but not high enough temperatures to induce viscous flow. |
P-1I-08 Nanoimprint Lithography Session Posters |
Impact of Exposure Doses on De-Molding Process in UV-NIL, Elastic modulus, polymerization rate and de-molding force for UV curable resin are evaluated in various exposure dosages. We have been demonstrated that under lower polymerization rate, the de-moding process is not stable even if elastic modulus is stabilized by UV curing. |
P-1I-09 Nanoimprint Lithography Session Posters |
Molecular Dynamics Study On Fracture Of Si Mold In Nanoimprint For Glass Film, To elucidate the fracture mechanism of the mold during NIL processes, a comprehensive analysis involving three factors should be conducted: mold deformation, resist deformation, and the interaction between them. We newly developed a simulation system for the comprehensive analysis of NIL including mold deformation. |
P-1I-10 Nanoimprint Lithography Session Posters |
Nanoimprint Lithography for Sub-10 nm Complex Patterns, we report our progresses on high-resolution NIL of complex patterns using molds made by electron-beam lithography (EBL). Dense lines at sub-10 nm half-pitch, isolated lines with line-width less than 10 nm and sharp corners and various other patterns were all successfully imprinted. |
P-1I-11 Nanoimprint Lithography Session Posters |
2D to 3D Imprinting on Surface of Teflon PFA Inlet Tube, We successfully demonstrated the imprinting of patterns from a plate electroformed-Ni mold onto the surface of a Teflon PFA inlet tube to develop three-dimensional micro-devices. In our method, it was important to imprint under an optimized condition that does not obstruct the rotation to be able to transfer precise patterns. |
P-1I-12 |
Numerical Study on Bubble Trapping in UV Nanoimprint Lithography, The basic mechanism of the bubble trapping comes from the resist flow branching at the cavity corner. To avoid the bubble trapping, lower contact angle between the resist and template and larger between substrate are generally demanded. Nevertheless, the requirements are completely opposite directions for successful releasing of the template. |
P-1I-13 Nanoimprint Lithography Session Posters |
Origins of Stamp Bending in Nano-Imprint Lithography, This paper presents experimental observation and model interpretation of two distinct regimes of stamp bending in nano-imprint lithography (NIL). We demonstrate that the complex interplay between resist and stamp protrusions results in either a plate or a membrane behavior, that drives the profile of the residual layer thickness. |
P-1I-14 Nanoimprint Lithography Session Posters |
Sub-10-nm Pattern Transfer and Nanoimprint Molds., The trend towards miniaturization of devices makes high-resolution pattern transfer a necessity, despite this it remains a challenge to fabricate sub-10nm arbitrary pattern nanoimprint molds. This work addresses this challenge by using a high contrast resist electron beam lithography process with reactive ion etching. |
P-1I-15 Nanoimprint Lithography Session Posters |
Fully Automated Hot Embossing Processes Utilizing High Resolution Working Stamps, Features sizes in the sub-µm range and down to 50 nm utilizing working stamps are demonstrated by applying a fully automated hot embossing process mode in the EVG®750. |
P-1I-16 Nanoimprint Lithography Session Posters |
Comparison of Demolding Forces for Various Si Molds and Mold with Extremely Smooth Side Wall, The relation between the side wall roughness of molds and the demolding force is focused. Silicon mold with extremely smooth side wall is fabricated by the anisotropic etching by KOH, and the demolding forces are measured for both Si molds by plasma etching and by the KOH etching. |
P-1I-17 Nanoimprint Lithography Session Posters |
Hierarchical Structure Formation Induced By Dewetting And Imprinting And Its Pattern Replication, We report on the fabrication of microstructures of polyimide (PI) by imprinting with the assistance of a residual solvent. The controllable PI hierarchical structures could be obtained by using various concentrations (2, 3, 4, 5 wt %) of poly-amic acid (PAA) in У-butyrolatone-NMP mixture solution through imprinting and dewetting. |
P-1I-18< Nanoimprint Lithography Session Posters/td> |
Ultra-Thin F-DLC Coating for Nanoimprint Lithography Imprinters, The advantages of F-DLC for nano-imprint lithography can be obtained using standard processing of SiO2 on Si imprinters with subsequent deposition of F-DLC. The advantage of this technique is that it does not require thick DLC layers or entire substrates of DLC. |
P-1I-19 Nanoimprint Lithography Session Posters |
In this paper, we use double-anchoring fluorinated molecules to treat nanoimprint lithography molds. Improved performances are found compared to previously used treatments. In addition to surface characterizations using surface energy and XPS measurements, the chemical interaction between resists and fluorinated treatments is investigated using electron spin resonance experiments. |
P-1I-20 Nanoimprint Lithography Session Posters |
We carried out thermal and UV nanoimprint using the plasma chemical vapor deposition film coated SiO2/Si and quartz molds. The mixture gas with CHF3 and O2 gases were used as a source gas. The pattern was successfully imprinted on the resin without any signs of adhesion. |
P-1I-21 Nanoimprint Lithography Session Posters |
In order to fabricate fine three-dimensional metal patterns such as plasmonic devices easily, we have developed the three-dimensional nanoimprint lithography technique using spin on glass mold with metal oxide release layer. The fine three-dimensional and the high aspect ratio gold patterns were obtained on the PET substrate using this technique. |
P-1I-22 Nanoimprint Lithography Session Posters |
Step-and-Repeat Thermal Nanoimprint for Functional Polymers, A step-and-repeat thermal nanoimprint scheme is presented in this work. This technique can improve the throughput of thermal nanoimprint for large area functional polymer patterning. |
P-1I-23 Nanoimprint Lithography Session Posters | |
P-1I-24 Nanoimprint Lithography Session Posters |
in this work, a process of fabricating a transparent cylindrical stamp is proposed. the transparent cylindrical stamp with sub 50nm linewidth is verified through the application of a roller-type UV-NIL process. |
P-1I-25 Nanoimprint Lithography Session Posters |
Fabrication Of Nano Dots Array Mold Using Inorganic Electron Beam Resist And Post Exposure Bake, Using inorganic electron beam resist and post exposure bake, novel mold fabrication process for patterned media has been established. Advantages of this process are as follows: developed resist pattern can use as mold and resolution are improved by post exposure bake. A 20 nm-diameter-dots-array mold was obtained using this method. |
P-1I-26 Nanoimprint Lithography Session Posters |
High Quality Secondary Templates for Nanoimprint Lithography from Cubic Silsesquioxanes (SSQs), In this presentation we will present specially designed cubic silsesquioxane (SSQ) materials for high quality secondary mold duplication in nanoimprint lithography (NIL). Quantify the fidelity of the pattern transfer process, with respect to dimension control from the NIL master to the secondary mold and through the imprinted pattern for both thermal and UV NIL systems, will be addressed. |
P-1I-27 Nanoimprint Lithography Session Posters |
Fabrication process of seamless and continuous roll mold for NIL using EB direct writing to rotating cylindrical substrate have been established. Using this method, seamless and continuous line and space patterns were obtained along circumferential of roll mold. In addition, fabricated roll mold is use for roll to roll UV-NIL. |
P-1I-28 Nanoimprint Lithography Session Posters |
Positive And Negative Counterpart Working Stamps For Soft UV-NIL Using One Master Design, |
P-1I-29 Nanoimprint Lithography Session Posters |
Easy Mask-Mold Fabrication For Combined Nanoimprint And Photolithography, Hybrid transparent working stamps with both a surface relief and absorbing mask pattern were fabricated by replicating nanostructures in a thin Ormostamp film on pre-patterned glass substrates. By using a combined nanoimprint and photolithography process, self-aligned mixed patterns of nano- and microstructures can be generated within one single resist layer. |
P-1I-30 Nanoimprint Lithography Session Posters |
The organic-inorganic hybrid polymer Ormostamp was successfully used for the fabrication of nanoimprint working stamps with sub-50 nm resolution. They were imprinted into several thermoplastic materials. We will show the effect of the imprint temperature and recoating with antisticking layer on the micro- and nanomolding capabilities. |
P-1I-31 Nanoimprint Lithography Session Posters |
The fabrication and characterisation of 2D and complex 3D structures using FIB onto templates for S-FIL is discussed. Furthermore, we introduce a method to overcome the problem of polymeric resist contraction for complex 3D patterns, using a “multilayer” imprinting technique and apply this technique for fabrication of “Motheye” lenses. |
P-1I-32 Nanoimprint Lithography Session Posters |
Resistive Switching Memory Fabricated by UV-NIL Process, We investigate the characteristic of nonvolatile memory fabricated by the UV-NIL process. Bottom and top electrodes are fabricated by UV-NIL process. The imprinted polymer is transferred to Al layer by the dry etch process. By using a plasma oxidation, Al2O3 layer is formed on the Al bottom electrode. After Al deposition, above UV-imprint and etch process are performed again. |
P-1I-33 Nanoimprint Lithography Session Posters |
We have employed a reversal imprint process to fabricate complicated 3D metal structures. Using molds of various shapes, we patterned various sub-wavelength metal structures, including pyramidal films, 2D hole-arrays, and crater-like structures. We found that the cavity effect in a crater structure significantly enhanced the intensity of optical field transmission. |
P-1I-34 Nanoimprint Lithography Session Posters |
Complete Reversal Imprinting For Fabricating Microlens Array With High Height Transcription, This work reports a reversal imprinting mechanism with a modified relative position of substrate and stemper. With the UV resin coated stamper pressed in the bottom, there is no fear of flowing down of the low-viscosity UV resin. Experiments further show that the full height transcription of microlens array can be easily achieved, regardless of the processing parameters. |
P-1I-35 Nanoimprint Lithography Session Posters |
Fabrication of TiO2 Nano Patterns using Direct Imprinting with TiO2 Sol, New fabrication process of TiO2 nano-patterns using nanoimprint lithography (NIL) and Sol-Gel method was presented. Ethanol based TiO2 sol was used as an imprint resin. During the imprinting process, TiO2 sol was changed to TiO2 gel. TiO2 gel patterns were finally converted to inorganic polycrystalline TiO2 patterns by subsequent annealing. |
P-1I-36 Nanoimprint Lithography Session Posters |
Ultra-Large And Thin Light Guide Plates Fabricated Using UV Imprinting Process, This study presents an effective process to fabricate large-area and thin light guide plates by the mechanisms of gas-assisted pressing and UV imprinting. This process has proven its potential for the fabrication of large-size and thin LGPs in conventional LCD display even the flexible display by using thin plastic films as the substrates. |
P-1I-37 Nanoimprint Lithography Session Posters |
Fabrication Of Organic TFT Arrays On A Flexible Sheet By Microcontact Printing, We have attempted to fabricate organic TFT arrays by microcontact printing. Our TEG sample consists of bottom-gate bottom-contact TFTs of channel length 5-50 µm. The 4 layers (gate, gate insulator, source-drain and OSC) were stacked on a polycarbonate film. We obtained excellent transistor characteristic of small variation. |
P-1I-38 Nanoimprint Lithography Session Posters |
Thermal Imprinting on Quartz Fiber using Glass-Like Carbon Mold, We prepared a polished glass-like carbon (GC) disk and fabricated a GC mold for quartz imprinting by applying MEMS fabrication technologies. Convex patterns on a mold were imprinted at 1350°C onto a quartz fiber. It was confirmed that the height of imprinted pattern increased as the line width increased. |
P-1I-39 Nanoimprint Lithography Session Posters |
Patterning Curved Surface Using Hybrid Nanoimprint-Soft Lithography Mold, We developed a novel hybrid nanoimprint and soft lithography mold composed of a rigid crosslinked patterning layer on an elastic PDMS support. We demonstrated high fidelity pattern transfer and sub-100nm resolution on curved surface using the hybrid mold. |
P-1I-40 Nanoimprint Lithography Session Posters |
In this study, direct ITO nano patterning techniques were developed using thermal nanoimprint lithography with an ITO nano particle solution. And the optical properties of the ITO glass and the LED device with the directly patterned ITO layer were characterized by UV-VIS-NIR and PL spectroscopy. |
P-1I-41 Nanoimprint Lithography Session Posters |
Effect of UV Irradiation on Sol-Gel ITO Nanopatterns Replicated by Room-Temperature Nanoimprint, The spin-coated ITO film can be delineated by RT-NIL, but the patterns disappeared after 600o annealing process. To overcome the above problem, we examined UV irradiation effect onto a spin-coated ITO film. As a result, we found that the ITO patterns imprinted by RT-NIL were kept at annealing of 600o for 1 hour by UV irradiation before annealing. |
P-1I-42 Nanoimprint Lithography Session Posters |
In this study murine pre-osteoblast cells have been grown on lithographically hydroxyapatite-like material on Si substrate using electron beam lithography and mass production from Step & Stamp imprinting lithography in micrometer-scale geometric patterns are used to investigate how this signal effects pre-osteoblast cell proliferation, function and cytoskeleton organization. |
P-2A-01 Directed Self Assembly Session Posters |
Lithographically Directed Surface Modification, We developed a processing method that reduces the steps necessary to yield a surface directing material assembly. A single resistless lithography step directly changes the surface energy, where the difference acts as a template to direct diblock polymer self-assembly into low-defect structures and can exceed the resolution from current resists. |
P-2A-02 Directed Self Assembly Session Posters |
Curing Process of Silsesquioxane in Self-Organized Diblock Copolymer Template, The profile of self-organized silsesquioxane pattern which was fabricated using PS-b-PEO template, was strongly influenced by curing method. In case of oxygen plasma treatment, the silsesquioxane pattern shrank than the case of thermal treatment. In this investigation, it was found the difference was attributable to the behavior of PEO. |
P-2A-03 Directed Self Assembly Session Posters |
Modification of the Wetting Behavior of PS Brush Layer by Inserting PMMA Molecules, We demonstrate that the chemistry of the PS brush layer can be modified by addition of hydroxyl terminated PMMA molecules.This can give insights in the directed self-assembly of block copolymers for advanced lithography applications. |
P-2A-04 Directed Self Assembly Session Posters |
Self-Aligned Double Patterning By Directed Self-Assembly Of Block Copolymer, The proposed process incorporates directed assembly of block copolymers into self-aligned double patterning processes. The results showed high pattern quality while only requiring spin-coating and hotplate annealing. Hence it could be a promising intermediate for extending the use of current lithography tools and lower the overall cost. |
P-2B-01 New Materials and Novel Patterning Techniques Session Posters |
Sub-40-nm patterning of Au on GaAs for Nanowire Catalysis, In this work, we demonstrate sub-40-nm patterning of Au features on GaAs substrates by using a PMMA/PMGI bilayer-resist structure and through the introduction of a Cr adhesion layer. These structures were subsequently used to grow GaAs nanowires by metal-organic chemical-vapor deposition (MOCVD) with diameters as small as 30nm. |
P-2B-02 New Materials and Novel Patterning Techniques Session Posters |
FIB-Assisted Bending Of Patterned Grown Silicon Nanowires, In this research, Focused Ion Beam(FIB) was used to bend patterned nanowires array. By adjusting irradiation direction and beam dose, complex structure with arbitrary direction and angle was possible. This potentially allows to fabricate nanowire based devices with precise position and shape control. |
P-2B-03 New Materials and Novel Patterning Techniques Session Posters |
Directed nanosphere lithography combined with Reactive Ion Etching has been applied as a low cost method to fabricate nanodots arrays with hexagonal symmetry on a gold film. The enhanced transmission effect of the patterned gold film has been studied, indicating strong surface plasmon resonance at the red near-IR wavelength region. |
P-2B-04 New Materials and Novel Patterning Techniques Session Posters |
Fabrication Of Arrays Of Magnetic Nanostructures Using Nanosphere Lithography And Ion Beam Etching, We present a fabrication process by combining nanosphere lithography and ion beam etching. By introducing tilt, combining different etch recipes and performing multiple self assembly and etch processes, arrays of novel magnetic structures such as holes with tilted sidewalls, dumbbells, zigzag wires and rings with triangular holes are created. |
P-2B-05 New Materials and Novel Patterning Techniques Session Posters |
Directed, Liquid Phase Assembly of Patterned and Thin Metallic Films by Pulsed Laser Dewetting, While the dewetting of continuous thin metal and polymer films has been studied in detail, less work has been devoted to the dewetting and pattern formation of confined or patterned thin films. In this work, nickel and nickel/copper thin films were patterned into various shapes and treated via nanosecond pulsed laser processing. |
P-2B-06 New Materials and Novel Patterning Techniques Session Posters |
Precise Placement of a Single Quantum Dot in a Bowtie Nanoantenna Gap, A 6nm semiconductor quantum dot is self-assembled precisely into the nano-gap of a bowtie nanoantenna structure for photonics applications. |
P-2C-01 Carbon Nanotubes Session Posters |
Molecular Dynamics Study on Bending Deformation of Carbon Nanotubes by Electron Beam Irradiation, Irradiating nanomaterials with energetic particles is expected to become a technique to tailor the structure with desirable properties. We perform a molecular dynamics simulation including the interaction between an incident electron and a target carbon atom to study the bending deformation of carbon nanotubes under focused electron beam irradiation. |
P-2C-02 Carbon Nanotubes Session Posters |
We are developing a technique for directed deposition of nano particles suspended in a gas on insulators. A SEM is used for writing charge patterns. This technique can be used for directing nano particles with 100nm precision on arbitrary patterns. And cnt’s can be locally grown with these particles. |
P-2C-03 Carbon Nanotubes Session Posters |
Self-Organized Pattern Formation By Ion-Beam Erosion For Antireflection Surfaces, Low-energy ion beam erosion is an alternative bottom up process for the preparation of nanostructured surfaces via self-organization. In this contribution the exploration and optimization of this process for the generation of broad-band antireflection fused silica surfaces for the DUV-spectral range will be discussed. |
P-2C-04 Carbon Nanotubes Session Posters |
Conductive Atomic Force Microscopy Study Of Self-Assembled Silicon Nanostructures, C-AFM investigations of self-assembled silicon nanostructures fabricated using EB-RTA have demonstrated for the first time a correlation between topography and current flow on these nanostructures. Observed higher currents in these nanostructures are either from surface states or from tunnelling or from a combined effect of the both. |
P-2C-05 Carbon Nanotubes Session Posters |
A generalized method producing large numbers of complex patterned nanowires with controlled diameters from many materials uses a reusable template. Mass production of nanowires with this method is almost as simple as using a rubber stamp and ink. Materials electrodeposited include: Pb, Au, Cu, Pd, Pt, Co, Te, CdTe, and CdS. |
P-2C-06 Carbon Nanotubes Session Posters |
The fabrication principle of guided self-organization was applied for the nanostructuring of pre-patterned Si surfaces by low energy ion beam erosion. It is demonstrated that by combining conventional lithographic techniques with ion beam induced self-organization a multi-scale patterning is possible. Some of the potential applications will be discussed, shortly. |
P-2C-07 Carbon Nanotubes Session Posters |
Electron Beam Induced Deposition of Cobalt for Use as Single-Wall Carbon Nanotube Growth Catalyst, EBID of cobalt is used to produce patterned catalyst for the CVD growth of CNTs. Various deposition conditions are known to affect the size of the metal particles deposited. Depending on the amount of cobalt deposited, the resulting CNTs can be either singal- or multi-wall. |
P-2C-08 Carbon Nanotubes Session Posters |
Properties of Single-Walled Carbon Nanotubes Integrated into Polyimide (SWNTs-Pi) Nanocomposites, We report the preparation of Single Walled Nanotubes-Polyimide (SWNTs-Pi) nanocomposite. Integration of SWNTs into the polyimide matrix has been found to increase the polymer properties. Also, the presence of dielectrophoresis (DEP) for SWNTs alignment appears to cause higher increase in the electrical conductivity. |
P-2C-09 Carbon Nanotubes Session Posters |
Stencilled Conducting Bismuth Nanowires, Bismuth nanowires have been intensively studied in recent years due to their unique electronic and thermoelectric characteristics. Here we present the physical and electrical characterization of bismuth naowires fabricated for the first time using stencil lithography. We extract the resistivity and show that it is independent of the wire diameter. |
P-2D-01 Resists Session Posters |
Sub-millisecond Post Exposure Bake of Chemically Amplified Resists by CO2 Laser Spike Annealing, Laser spike annealing has been studied for post exposure bake of chemically amplified resists. High-resolution patterns with sub-100nm features are formed under 500us spike annealing. Resist sensitivity is impacted significantly for some resist systems while others are relatively insensitive to the PEB conditions. Quantitative analyses were obtained using resist bilayers (PAG loaded/PAG free). |
P-2D-02 Resists Session Posters |
Ultra-Thin Film Effects on Photoresist Imaging Performance, This study examines the effect of film thickness on pattern collapse by determining the modulus and critical stress at the point of pattern collapse at varying film thicknesses for an assortment of photoresists. Positive and negative tone resists are compared to determine the different effects of cross-linked and non-cross-linked films. |
P-2D-03 Resists Session Posters |
We have developed several different quantitative structure-property relation models based on bond, group, and structural contribution along with other parameters that allow the prediction of the glass transition temperature of molecular resists. It works well across multiple different levels of protection, different structure moieties, and different molecular sizes. |
P-2D-04 Resists Session Posters |
193nm Photoresist Hybrids for Sub-32nm Resolution, LER, and Sensitivity Requirements, CA resists possess high sensitivity, etch resistance, and thermal stability, but with poor resolution and LER for sub-32nm application. Scissioning polymers possess low sensitivity, etch resistance, and base solubility but with potentially superior resolution and LER. The hybrid parameter space is explored which is bounded by these technologies. |
P-2D-05 Resists Session Posters |
Can Acid Amplifiers Help Beat the RLS Trade-Off? , We have synthesized over twenty new acid amplifiers, specifically designed for use in EUV resists. These compounds can increase resist sensitivity by 5-10X. We will explicitly describe these compounds and the resists made from them. We will make lithographic comparisions between resolution, LER and sensitivity using KLUP and Z-Factor. |
P-2D-06 Resists Session Posters |
Investigation Of Surface Roughness Of Poly(Methylmethacrylate) At Reduced Temperatures, The surface roughness of PMMA developed at low temperatures was reported for the first time. |
P-2D-07 Resists Session Posters |
Thermal Development Of Calixerene Resist, One of the dry resist development methods is thermal development. We have investigated thermal development of calixarene molecular resist. The development at 300-400 C improves electron beam exposed structure line edge roughness while maintaining sensitivity and good resolution of the resist. |
P-2D-08 Resists Session Posters |
Comparing The RLS Tradeoffs At EUV, E-Beam And 193 Nm For Common Resist Platforms, Understanding and addressing the resolution, line width roughness (LWR) and phorospeed (RLS) performance limitations intrinsic to CA photoresists is a topic of significant interest.In this contribution, we describe experiments comparing the measured linewidths, LWR and photospeed for the same resists imaged at 193i, EUV and 100 keV e-beam. |
P-2D-09 Resists Session Posters |
DUV-Induced Nanopatterning Of Polyanhydride Films Deposited By Pulsed Plasma Polymerization, We describe here a new method for fabrication of chemical and topographical functional materials on the micrometer and on the nanometer scale. This technique entails a deposition of the polymer film by pulsed plasma polymerization and nanopatterning is achieved by means of DUV interferometry at 193 nm. |
P-3-01 Metrology Session Posters |
Material Contrast from Ga+ Ion Induced Secondary Electron Images, The relative contrast of Ga+ focused ion beam (FIB) induced secondary electron (ISE) images in metal layers show non-monotonic behavior as a function of target atomic number which is consistent with non-monotonic ion-solid interaction characteristics observed across the periodic table. |
P-3-02 Metrology Session Posters |
Inspection Method For Contact/Via-Holes Using A Low-Energy Electron Microcolumn, We propose a novel method of inspecting small contact/via-holes using a low voltage Microcolumn, where the specimen current image is very sensitive to residues. Simply by measuring the sample electron current when the beam is place over the hole, the presence of a no residual thin film at the bottom can be detected. |
P-3-03 Metrology Session Posters |
Iterative Phase Recovery Using Wavelet Domain Constraints, Phase retrieval is a central problem in coherent x-ray diffraction microscopy. In many cases much of the available a priori information is not utilized by the algorithm. Wavelets have the advantage of being spatially localized and are more able to describe non-stationary signals. We gain the advantage of utilizing much more of the a priori information. |
P-3-04 Metrology Session Posters |
Automatic Measurement Of Electron Beam Size By BEAMETR Technique Using 20nm Test Patterns, Beam size is a critical parameter for any e-beam system. In this paper, BEAMETR technique which uses spatial spectral analysis was further developed; including test-samples with minimum feature size 20nm. As a result, both resolution and accuracy of measurements was improved. Results of beam size measurements are presented. |
P-3-05 Metrology Session Posters |
Test-samples with high signal contrast and high fidelity in size are fabricated. Instead of traditional lateral patterning a planar technology is used for fabrication. Using MC simulation an original method for qualitative measuring of beam diameter is developed. The test-sample containing 5nm of W is fabricated and the method is experimentally confirmed. |
P-3-06 Metrology Session Posters |
We describe our efforts to characterize keratinized tadpole teeth through a combination of micro-CT, FIB-SEM nanotomography, finite element modeling and stereolithographic printing. Combined data form a hybrid tomographic 3D model. Tadpole teeth, constructed of keratin but fastened in flexible tissue, is a good model for the design of microtools. |
P-3-07 Metrology Session Posters |
Transmission Electron Microscopy of Fabricated Nanostructures, We show methods for nondestructive TEM analysis of etched or grown nanostructures with 5-500nm lateral dimensions without removal from their substrate. This high resolution imaging approach allows the examination of the internal composition as well as surface quality of nanostructures. |
P-3-08 Metrology Session Posters |
Mask Observation Result using Coherent EUV Scattering Microscopy at New SUBARU, For metrology of actinic EUVL mask, we have developed a coherent EUV scattering microscope at BL-3, NewSUBARU. Mask obserbation results will be introduced. |
P-3-09 Metrology Session Posters |
High Spatial Resolution Sample Analysis Using A Helium Ion Microscope, An innovative helium ion backscatter detector has been implemented on the ORION helium ion microscope. Using such a detector it is possible to perform nano-scale material identification, as well as thin film measurement. |
P-3-10 Metrology Session Posters |
Parallel Imaging With Micromachined Self-Actuated Piezoresistive Proximal Probes, In this article we will present the application and properties of the one dimensional VLSI NEMS-chip incorporating 32 proximal probes for high speed atomic force microscopy measurements. Each array cantilever integrates a thermal deflection actuator, a piezoresistor acting as a deflection detector and a microtip with radius of 10 nm. |
P-4-01 Nanobiology Session Posters |
Suspended Gold Particles With Magnetic Cores For In Vitro Diagnostics, Gold particles with a magnetic core are formed on a substrate using lithography and a lift-off step and are suspended into solution to form suspended particles with defined shape and composition. |
P-4-02 Nanobiology Session Posters |
We report top-down engineering methods using lithography to produce monodisperse, non-spherical (rod and disc shaped) polymer composite particles for nanomedicine applications. Wafer scale photolithography and nanoimprint enable high-rate fabrication and biocompatible and water soluble polymer is used as sacrificial layer to release particles to aqueous solution for nanomedicine applications. |
P-4-03 Nanobiology Session Posters |
3D Self-Similar Chain Nanolens Fabrication And Their Use In Single Molecule Detection, In this work, we report a novel process for the fabrication of nano-structures using e-beam lithography and electroless technique. The fabrication difficulty is the real nanoscale control. This device can be used as SERS substrate, obtaining enhancement of the electric field up to 3 orders of magnitude. |
P-4-04 Nanobiology Session Posters |
Brain Tissue Response To Nanowires Implanted Into The Rat Striatum., We investigate the biocompatibility of nanowires implanted in the rat brain. The inflammatory response of the brain tissue to the nanowires has been assessed using immunohistochemistry at 1, 6 and 12 weeks after the implantation. The nanowires can be visualized by confocal microscopy. |
P-4-05 Nanobiology Session Posters |
A Transparent Multilevel-Electrodes Microfluidic Chip For Dielectrophoretic Colloidal Handling, We present a new approach for colloidal handling in an original manufactured microfluidic system. A new kind of chip whose benefits are 2 aligned levels of ITO electrodes in a photopatternable silicone is developed. Several fundamental key functions for DEP colloidal manipulation at the single particle level are experimentally investigated. |
P-4-06 Nanobiology Session Posters |
Real-Time DNA Sequencing via Detection of Polymerization with Silicon based Pico-calorimeter chips, We illustrate the design and experimental results of a primary template as well as different advantages and potential applications of the presented platform for DNA sequencing and genetics. The design rules for an optimal silicon-membrane based devices as well as the surrounding platform module for liquid phase picocalorimetry are discussed. |
P-4-07 Nanobiology Session Posters |
A Microretroreflector-Based Diagnostic Platform, We are developing a flexible platform for the detection of small quantities of analytes (e.g., virus particles, bacteria, DNA, RNA, etc.) that is based on the use of micron-scale retroreflectors. |
P-4-08 Nanobiology Session Posters |
For uniform gene delivery in a local electroporation device, cells are immobilized on a poly (e-caprolacton) (PCL) membrane with well defined micropore arrays. The results show that such devices have better uniformity and gene transfection efficiency in comparison of bulk devices and track-etch membrane devices with random pores. |
P-4-09 Nanobiology Session Posters |
We demonstrate the ability to localize the synthesis and immobilization of ssDNA through the use of pre-patterned Hydrogen Silsesquioxane (HSQ), providing a method for the fabrication of nanoscale ssDNA spots, limited only by the resolution of the HSQ, well-known high-resolution negative tone resist. Tests were verified by DNA hybridization. |
P-4-10 Nanobiology Session Posters |
We study fabrication of SERS devices based on metal nano-patterned structures combining e-beam lithography and silver electroless deposition, obtaining controlled and site related growth of metallic nanoparticles on silicon surface. R6G Raman spectra show enhancement of the signal in such a way that we can detect molecules at low concentration. |
P-5-01 Nanostructure/Nanodevices Session Posters |
Low Roughness Microdisk Resonators Fabricated By Focused Ion Beam (FIB), In this work we present a new approach for the fabrication of microdisk resonators using a focused ion beam (FIB). This technique is very efficient, enabling the placement of the devices at any regions of a sample, facilitating a possible monolithical integration. Moreover, it allows the production of very low roughness walls in the microdisk. |
P-5-02 Nanostructure/Nanodevices Session Posters |
We present the operation of silicon based paddle-type cantilever sensors for real-time monitoring of mass and size distribution of airborne deep-submicron dust particles by using electrostatic attraction. Electrostatic force attracts the airborne particles to the cantilever, detected by an oscillating phase shift, allowing real-time detection of sub 100 nm particles. |
P-5-03 Nanostructure/Nanodevices Session Posters |
Effects Of Ion Irradiation On Electrical Properties Of Carbon Nanotubes, Carbon nanotubes attract interest due to combination of electrical, mechanical and optical properties, with many potential applications in devices like sensors and other MEMS. These properties can be modified to provide selective sensitivity to different gases when CNT decorated with metals and oxides nanoparticles are used in chemical sensors. |
P-5-04 Nanostructure/Nanodevices Session Posters |
The electroosmotic flow patterns of extensional and rotational flows have been demonstrated in a micro-scale fluidic device with a five cross design. The experimental flow patterns of polystyrene rigid beads agree well with the simulation results by solving the incompressible Navier-Stokes application mode and conductive media DC mode. |
P-5-05 Nanostructure/Nanodevices Session Posters |
Parallel Proximal Probe Arrays With Vertical Interconnections, Massively parallel operation of large arrays of Scanning Probe Sensors makes possible a higher imaging throughput. In this work we are presenting a low-resistance polysilicon through-wafer interconnects, which, have been integrated with the piezoresistive deflection sensor and bimetal (bimorph) actuator to enable backside contacts to the drive ASIC circuitry. |
P-5-06 Nanostructure/Nanodevices Session Posters |
Lateral Flow Particle Filtration and Separation with Multilayer Microfluidic Channels, Multilayer microfluidic channels are useful structures for MEMS applications. We present a lateral-flow particle filtration and separation device based on PDMS multilayer structure fabricated by nanoimprint and transfer-bonding. |
P-5-07 Nanostructure/Nanodevices Session Posters |
Fabrication Methods For Passive Sensor Tags On Flexible Polymer Substrates, Surface acoustic wave (SAW) devices enable wireless sensor nodes to operate in a locally passive mode in environments where battery and scavenged power is not viable. We present the fabrication and operation of a postage-stamp-sized low-profile SAW sensor tag with an integrated antenna on a flexible plastic substrate. |
P-5-08 Nanostructure/Nanodevices Session Posters |
Lithographically Defined Silicon Nanowires And Quantum Dots For Quantum Devices, E-beam lithography is used to fabricate single-crystalline Si nanowires and Si quantum dots with critical dimension required for visible light emission (<10 nm) on ultrathin Si (<10 nm in thickness) on insulator (SOI) substrate made by wafer bonding. |
P-5-09 Nanostructure/Nanodevices Session Posters |
Removing Pt Contamination In FIB Assisted Deposition Of Electrodes For Nanodevices, So far, there are few discussions about the issue of Pt contamination during FIB assisted deposition, and the elimination of Pt contamination has rarely been reported.In this work, we reported the results on Pt contamination during FIB assisted deposition of Pt electrode pair and the way to remove this contamination. |
P-5-10 Nanostructure/Nanodevices Session Posters |
Nanostructuring Of Graphene Layers By AFM Local Anodic Oxidation, Graphene layers grown on SiC substrates are patterned at the nanometer scale by atomic force microscopy. Stripes of SiC are narrowed by defining local constrictions resulting in an increase of the resistivity of the stripe. Electrical Force Microscopy Images allows to test in situ the electrical disconnection of graphene areas. |
P-5-11 Nanostructure/Nanodevices Session Posters |
Template Based Fabrication Of Size Tunable Single-Walled Carbon Nanotube Single Electron Transistors, A novel technique is demonstrated for the fabrication of size tunable and controllable single electron transistors by placing single-walled carbon nanotube on top of patterned Al/Al2O3 local bottom gate which acts as a mechanical template and bend the nanotube at the edges to form two tunnel barriers. |
P-5-12 Nanostructure/Nanodevices Session Posters |
Fabrication Of High Aspect Ratio Nano-Trenches And Characterization Of Spin-On Dielectric Filling, We demonstrate the fabrication of high aspect ratio nano-trenches (AR >30, trench width <25 nm) to simulate shallow trench isolation structures for 22 nm semiconductor node using nanoimprint lithography and plasma (etching. These trenches were then used to evaluate gap filling property of new polysilazane (PSZ) based SOD. |
P-5-13 Nanostructure/Nanodevices Session Posters |
Surface modifications such as self-assembled monolayers (SAMs) and polystyrene (PS) polymer were carried on Al2O3 high-k material to satisfy the high mobility as well as the low operating voltage. We investigated the electrical characteristics of pentacene OFET depending on the various surface modifications. |
P-5-14 Nanostructure/Nanodevices Session Posters |
In this work, a multi-step pulsed laser deposition (PLD) process was developed to deposit carbon nanotubes (CNTs) assisted LiCoO2 electrode, which can improve the power density 1.7 times greater then the corresponding electrode without CNTs. |
P-5-15 Nanostructure/Nanodevices Session Posters |
ITO-Free Organic Solar Cells On Flexible Plastic Substrates, We demonstrate organic solar cells made with metal nanowire array as transparent electrode on flexible substrate fabricated by nanolithography based on metal transfer printing, and evaluate its performance as compared with the device made with conventional ITO electrode. |
P-5-16 Nanostructure/Nanodevices Session Posters |
Diameter-Dependent Extraordinary Optical Transmission Of Dielectric Hole-Array Membrane, Dielectric nano-hole arrays made of silicon nitride membrane were fabricated for the study of extraordinary optical transmission (EOT). Besides the mechanism accounted for this phenomenon, the influence of the hole-diameter on the transmission spectrum will be reported. |
P-5-17 Nanostructure/Nanodevices Session Posters |
Substrate Patterning By Nanoimprint For Efficiency Enhancement Of Organic Light-Emitting Devices, In this paper we will address the whole process flow to manufacture nanostructured light emitting devices with NIL approach. First results show that up to 20% improvement, regarding light extraction was achieved with such patterned substrates. With 1mA/cm² current structured OLED emitted 17Cd/m² whereas a flat device emitted only 14Cd/m². |
P-5-18 Nanostructure/Nanodevices Session Posters |
We report on the design, fabrication and measurements of simply perturbed frequency-selective surfaces fabricated on large free-standing thin polyimide membranes for applications in multiband infrared filters with up to four transmission/reflection bands. |
P-5-19 Nanostructure/Nanodevices Session Posters |
Spin polarized non-collinear calculation was conducted on a Co/MgO/Co magnetic tunnel junction system by the ab-initio study. Anti-parallel alignment of magnetic moments of both ferromagnetic electrodes showed fluctuations in sign of spin polarization values, which was considered as the major reason for the high tunneling resistance. |
P-5-20 Nanostructure/Nanodevices Session Posters |
We employed stenciling as the strategy to fabricate networks of permalloy (Py) nanomagnets on ultrathin silicon nitride (SiN) membranes. Then we used magnetic force microscopy (MFM) and transmission electron microscopy (TEM) to assess the importance of the microstructure/chemical composition on the magnetic switching field distribution (SFD). |
P-5-21 Nanostructure/Nanodevices Session Posters |
Magnetic Properties Of Diamond Shaped Elements And Chains Fabricated By Nanosphere Lithography, Nanosphere lithography is combined with etching and evaporation to form chains of NiFe diamonds. Detailed magnetic domain distributions as the number of diamond elements increased were studied by magnetic force microscopy. Micromagnetic simulations were used to understand and explain the domain arrangements and their switching behaviors. |
P-5-22 Nanostructure/Nanodevices Session Posters |
Magnetic Soft X-ray Imaging of Non-linear Vortex Core Dynamics, We report on the fabrication of nanopatterned magnetic samples for observations of non-linear vortex core dynamics in permalloy structures utilizing magnetic full-field soft X-ray microscopy. An AC current sent through waveguides creates an Oersted field at the sample and excites the resonant vortex core motion in the sample. |
P-5-23 Nanostructure/Nanodevices Session Posters |
We fabricated nano-periodic Josephson junction array in Bi2Sr2Ca2Cu3O10+δ (Bi-2223) single crystal whisker using FIB, in ab-plane with size of 2 µm x 2 µm (and 0.5 µm x 0.5 µm). We tilted sample stage of FIB and etched in c-axis with junction height of about 150 nm (and 100 nm). |
P-5-24 Nanostructure/Nanodevices Session Posters |
Advanced Nanoscale Anode Fabrication for High-Performance Solid Oxide Fuel Cells, As a first step towards optimized 3-D fuel cell electrode structures, we examine well-defined, two-dimensional electrode structures with tunable features. Here, we utilize a facile sacrificial templating method, known as nanosphere lithography, to deposit a fully connected, yet fully porous metallic thin-film on fuel cell electrolyte materials. |
P-5-25 Nanostructure/Nanodevices Session Posters |
We report on the fabrication of nanostructures by electron beam induced deposition from the Pt(PF3)4 precursor in a scanning electron microscope; we demonstrate that the operator can control the morphology of the created deposits (size and density of the platinum grains) by varying the electron dose during post-irradiation. |
P-5-26 Nanostructure/Nanodevices Session Posters |
Enhancement of Power Efficiency in Photonic Crystal Structured OLED, A new high-efficiency Photonic crystal structured organic light emitting diode is fabricated using a low pressure and room temperature nanoimprint lithography (NIL) process. The power efficiency of the fabricated PC-OLED with a pillar height of 50 nm is 93% higher than the reference OLED with no PC structure. |
3A-1 Extreme Ultraviolet Lithography |
Pushing EUV Lithography Development Beyond 22-Nm Half Pitch, We investigate the possibilities and limitations of using the SEMATECH Berkeley 0.3-NA MET for sub-22-nm development. We consider mask limitations and present a method unique to the centrally obscured MET allowing these limitations to be overcome. We explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. |
3A-2 Extreme Ultraviolet Lithography |
Substrate Effects in EUV Lithography, Effects of substrate on EUV lithography was investigated through exposure of 40 nm half-pitch line/space patterns in PMMA films on substrates with vastly different absorption strengths. Results show a surprisingly large dependence of linewidth on the substrate type which may be attributed to secondary electrons generated in the substrate. |
3A-3 Extreme Ultraviolet Lithography |
Experimental Determination of Image Placement Accuracy in EUV Lithography, Non-flatness of the reticle substrate and the chuck result in Image Placement Error(IPE). We have studied IPE with special EUV reticles with IP fiducials that can be imaged in four different orientations. We will discuss experimental results and modeling methods required to isolate IPE from systematics in the exposure tool. |
3A-4 Extreme Ultraviolet Lithography |
Aerial images for isolated buried defects and buried defects near features are compared between the Actinic Inspection Tool (AIT) and the fast EUV simulator RADICAL. The AIT aberrations will be extracted using a novel method and an overall perspective will be given on the nature of EUV defect-feature interactions. |
3A-5 Extreme Ultraviolet Lithography |
Line Edge Roughness Reduction Studies Employing Grazing Incidence Ion Beam, At the CPMI a new technique to reduce LER from patterened photoresist has been developed in conjunction with INTEL. Results obtained using our technique showed significant LER reduction from 6.9±0.47 nm to 3.9±0.61 nm for 90 nm lines and spaces. Results on the change of CD values while reducing the LER values in a EUV exposed samples will be presented. |
3A-6 Extreme Ultraviolet Lithography |
Self-Imaging Of Complex Structures With A Table-Top EUV Laser, We report the development of novel high-resolution EUV patterning approach, capable of patterning large area periodic structures of arbitrary content with nanoscale resolution. It is based on Talbot imaging – the Generalized Talbot Imaging, or GTI. Talbot imaging opens the door to novel application of nanolithography of periodic patterns, such as high-density memory chips. |
3B-1 Ion Microscopy |
Sub-Surface Damage from Helium Ion as a Function of Dose and Beam Energy, In recent years, helium ion microscopy has produced high resolution images with novel contrast mechanisms. However, when using any charged particle beam, one must consider the potential for sample damage. In this paper, we will consider the helium-induced damage as compared to the traditional gallium beam for semiconductor applications. |
3B-2 Ion Microscopy |
Application of the Helium Ion Microscope to Biological Sciences, We have applied the Helium Ion Microscope (HIM) to image a wide spectrum of biological specimens. The strength of the HIM for these applications is the high spatial resolution, ability to neutralize insulating samples, and large depth of field. We discuss the strengths and limitations of this technology for bio-sciences. |
3B-3 Ion Microscopy |
Understanding Imaging Modes In The Helium Ion Microscope, Recent investigations with the ORION helium microscope are gaining us a better understanding of sample interactions and what they mean for the image information provided. In secondary electron imaging, for example, the surface sensitivity is attributed to the very low mean energy in the SE spectrum. |
3B-4 Ion Microscopy |
Optical Imaging and Processing in a SEM/FIB: The Three Beam System, This paper shows recent work that integrates true optical microscopy into a SEM/FIB microscope. Capabilities such as fluorescence microscopy and laser-assisted processes with a high fluence source can now be considered within the FIB/SEM environment. Design features, imaging and materials processing results will be described. |
3B-5 Ion Microscopy |
On The Influence Of Sputtering In Determining The Resolution Of A Scanning Ion Microscope, The evolution of a feature under ion bombardment can be of different types; fading, which only affects the ability of observing small features, since it limits the collectable SNR; shrinking, that must be taken into account when determining the accuracy of measurements. Understanding and modelling these effects is crucial to optimise and set the limits of a Scanning Ion Microscope. |
3B-6 Ion Microscopy |
A two dimensional Binary Pseudo-Random Array test surface, engineered to produce a flat “white noise” power spectral density response, has been fabricated using e-beam lithography and etching. The test surface has proven to be an effective calibration standard for the Modulation Transfer Function of Optical Metrology tools. |
3C-1 Nanowires and Nanoelectronics |
Stacked nanowire MOSFET devices with gate-all-around (GAA) or independent double gate (ΦFET) are real candidates for sub-32nm MOS transistors. By studying high aspect ratio fabrication processes we have succeeded in achieving 18nm GAA transistors and for the first time, sub-20nm ΦFET devices. |
3C-2 Nanowires and Nanoelectronics |
Diameter-Dependent Electronic Transport Properties Of Au-Catalyst/Ge-Nanowire Schottky Diodes, We present electronic transport measurement of individual Au catalyst/Ge nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small bias conductance increases with decreasing diameter. Theoretical calculations show that this effect arises because electron-hole recombination in the space-charge region is the dominant charge transport mechanism |
3C-3 Nanowires and Nanoelectronics |
Effects Of Visible Light Illumination On The Conductance Of Al/Alox Single-Electron Transistors, Single Electron Transistor (SETs) are proposed to detect charge redistribution inside so–called "blinking" semiconducting nanostructures. This work includes studies of the effects of light illumination on the behavior of SETs, with metal shields used to reduce detection of unrelated photon-excited effects and improve performance of the devices. |
3C-4 Nanowires and Nanoelectronics |
(Invited) Nanowires For Basic Science And For Applications In Electronics And Photonics, The nanowires (NWs) that I will talk about are single-crystalline semiconductors which form via guided self-assembly, replicating the crystalline structure of the substrate and with location and dimensions controlled by top-down lithography. |
3C-5 Nanowires and Nanoelectronics |
Fully Self-Aligned Process For Fabricating 100 Nm Gate Length Enhancement Mode GaAs MOSFETs, This work reports a process flow, which has enabled the first demonstration of functional, fully self-aligned 100 nm enhancement mode GaAs MOSFETs with metal gate and SiN sidewall spacers. |
3C-6 Nanowires and Nanoelectronics |
Gallium Nitride Nanowire Devices-Assembly, Fabrication And Applications, GaN nanowires grown by the vapor-solid technique are aligned usind dielectrophoresis to fabricate various devices. FET's with the gate surrounding the nanowire demonstrate superior on/off ratios (~1E7). Light emission (LED's) and gas sensing are observed. |
3D-1 Cell Guidance |
We present an EBL-defined nanowire pattern that can sort axons coming from different directions on a substrate. The pattern defines tracks for left-bound traffic and right-bound traffic, which opens up new possibilities for designing neuron networks on a chip. |
3D-2 Cell Guidance |
Activation of Macrophages by High Aspect Ratio Nanostructures., The effects of GaP, polystyrene and nickel nanowires on mouse macrophages were investigated. The nanowires were rapidly attacked and engulfed by the macrophages. The nanowires activated these inflammatory cells and also induced cell death in a manner which appeared related to the physical and mechanical properties of the wires. |
3D-3 Cell Guidance |
Subcellular Force Dynamics of Outgrowing Axons Measured by Free-standing Nanowires., Neurons were cultured on fluorescently labeled GaP nanowires. The wires were grown with MOCVD in EBL defined arrays. Confocal microscopy was used to monitor the cells and the nanowires. The mechanical dynamics of the outgrowing axons could be measured with high spatial resolution, by observing deflections of the nanowire tips. |
3D-4 Cell Guidance |
We demonstrate a nanoimprint process using demolding-induced elongation to create high aspect ratio (~25) nanopillars of high density in bulk polystyrene plates. Simply by demolding at an elevated temperature, imprinted nanopillars can be stretched vertically to obtain various lengths. The structure aspect ratio shows strong effects on the behaviors of human dermal fibroblasts for both pillar and gratings. |
3D-5 Cell Guidance |
Gold-Tipped Elastomeric Pillars for Cellular Mechanotransduction, Arrays of elastomeric pillars are formed which are selectively functionalized only on their top surface. This restricts cell adhesion to the tops of the pillars and enables more accurate measurement of cellular force transduction. |
3D-6 Cell Guidance |
Nanowire Templated Nanotubes for Cell Injection, Nanotubes were fabricated by etching the core of coated nanowires. By dimpling and wet-etching the tubes were accessed from the backside of the substrate. Adherent cells were cultured on the hollow nanowires and a fluorescent marker was added to the backside. The substance entering the cells were monitored by microscopy. |
4A-1 Maskless Lithography |
Mapper: High Throughput Maskless Lithography, MAPPER is building multiple maskless tools based on a 300 mm platform with 110 parallel electron beams. In this paper we will describe the challenges for semiconductor manufacturing at the 22-nm node and beyond and our efforts to mitigate them together with the latest imaging results. |
4A-2 Maskless Lithography |
Projection maskless nanolithography and nanopatterning techniques are based on the use of a programmable Aperture Plate System with integrated CMOS electronis (CMOS-APS). |
4A-3 Maskless Lithography |
(Invited) Charged Particle Nanopatterning (CHARPAN), Charged Particle Nanopatterning (CHARPAN) techniques based on electron and ion multi-beam projection techniques are finding increased industrial interest for the fabrication of leading-edge complex masks, nanoimprint templates and for nanosystem devices. |
4A-4 Maskless Lithography |
We are developing a multi column cell (MCC) EB exposure system with character projection (CP). We assembled a system made up of four column cells for the proof-of-concept of MCC with CP. In the conference, we will show evaluation results of each electron beam and exposure results with four column cells in the POC system. |
4B-1 Nanometrology |
(Invited) High-Resolution Scanning X-Ray Diffraction Microscopy, I will describe an imaging method based on ptychography that addresses these challenges by bridging the gap between CDI and STXM through the collection of coherent diffraction patterns at each point of a STXM scan. The method allows high-resolution imaging of a wide range of materials and life science specimens. |
4B-2 Nanometrology |
Characterizing The Latent Image In Block Copolymer Resists With X-Ray Diffraction, We characterize the structure of lamellar block copolymer resists assembled by epitaxy with transmission x-ray diffraction. The domain shapes, sizes, interface structure (including line-edge roughness), and placement errors are extracted from the data and compared with integrated circuit manufacturing requirements. |
4B-3 Nanometrology |
GISAXS A New Metrology To Characterize Nano-Patterned Samples, GISAXS is a powerful metrology to probe nano-patterned samples. Samples prepared by e-beam lithography and reactive ion-etching were used to show how GISAXS experiments reveal the structure of patterned substrates and how they contribute to a detailed quality control in a fabrication process. |
4B-4 Nanometrology |
We propose a non-iterative reconstruction approach to detect the functional deviance in extended patterns in integrated circuits by using coherent hard x-ray diffraction. Simulation shows the method can bypass the oversampling requirement in iterative reconstruction algorithms and overcome various experiment issues (beam stop, low contrast, etc). |
4C-1 Graphene |
Electrostatic Exfoliation of Pre-Patterned Graphene Micro- and Nanostructures, We present a novel nanofabrication route, which uses a combination of electrostatic exfoliation with micro and nano lithographically patterned highly oriented pyrolytic graphite (HOPG) to produce pristine graphene features and fabricate electronic devices. |
4C-2 Graphene |
Impact of Edge Roughness on Graphene Nanoribbons, An understanding of the edge effect in graphene systems is important for realization of graphene-based electronics. In patterned graphene, the edge effect encompasses chirality, critical dimension (CD) variation, and line edge roughness(LER). In this study, it is shown how LER can affect transport properties of graphene nanoribbons (GNR). |
4C-3 Graphene |
Bulk carbon generally known to be undissolve in gallium, although the liquid gallium covers a large area, the catalytic reaction was limited to the region just above the liquid surface. We succeeded to synthesis approximately 3 to 5 graphene sheets on an amorphous carbon film using liquid gallium. |
4C-4 Graphene |
Epitaxial Growth of Graphene on High Topology SiC Structures Patterned by Focused Ion Beam, We have demonstrated the epitaxial growth of graphene on SiC structures with high topology defined by milling with a Focused Ion Beam. Multiple layers of graphene were confirmed via scanning Auger spectra with no detected layer difference between regions patterned by FIB and unpatterned regions. |
4C-5 Graphene |
1nm Thin Carbon Nanosheets With Tunable Conductivity And Stiffness, Atomically thin carbon films with tunable conductivity and arbitrary size are fabricated by self-assembly, lithography and pyrolysis. Self-assembled monolayers of biphenyls are cross-linked by e-beam and detached from the surface. Upon annealing at ~1000K, the cross-linked monolayer transforms into a graphitic phase and its resistivity changes from insulating to conducting. |
4D-1 Photo-Resists |
The pre-organized pixel-forming resists created from block copolymers with desirable and well-defined material structures control the size and the resist heterogeneity, and also reduce LER of the structure. In this study, asymmetric poly styrene-block-poly(t-butyl acrylate) diblock copolymer is used as pre-organized photoresist by adding catalytic amounts of PAG. |
4D-2 Photo-Resists |
Defectivity Solutions for Topcoat-Free Photoresists at the 22nm Node, Topcoat-less photoresists create a hydrophobic surface and thus eliminate many of the processes needed during an immersion process. This paper will examine the relationship between contact angle (receding and advancing), and the different process adjustments required for defectivity levels equal to or better then current topcoat systems. |
4D-3 Photo-Resists |
Alternative Developer Solutions For EUV Resist, The use of alternative developer solutions to improve line width roughness (LWR) for EUV resists is proposed. Imaging results have shown consistent resolution limits, a slight variation in the resist sensitivity and a significant improvement in LWR with alternative solutions in comparison to the standard tetramethylammonium hydroxide aqueous developer solution. |
4D-4 Photo-Resists |
Stochastic Approach to Modeling Photoresist Development, Dissolution rate variance comes from both the variance in polymer solubility and variation in the development path required to bypass randomly insoluble molecules. Fractal surface etching models are applied to photoresist dissolution to predict the difference in dissolution rates between the stochastic and continuum models, and to predict surface roughness. |
4D-5 Photo-Resists |
High Performance Negative Tone Molecular Resists Using Cationic Polymerization, We have developed a series of negative tone molecular resists that show a combination of high resolution, good sensitivity, and low LER. Under 100 keV e-beam and EUV lithography, they have shown resolution down to sub-25 nm half-pitch, sensitivity around 50-100 µC/cm2 and 5-10 mJ/cm2, and LER σof 2.3-4 nm. |
5A-1 Nanoimprint Lithography Applications |
High Volume Manufacturing Based on NanoImprint Lithography on Rough and Non-Planar Substrates, We present the advantages of a 2-step imprint process utilizing intermediate polymer stamps (IPS) and a simultaneous thermal and UV NIL process (STU) for manufacturing of nano-structred devices on rough and non-planar substrates. Examples given are high-brightness LEDs based on two dimensional photonic crystals and anti-reflection layers on optical lenses. |
5A-2 Nanoimprint Lithography Applications |
We present a novel approach to fabricate wafer scale sub-100-nm checker board structures without using EBL. The method is based on double cycles of nanoimprint and self-aligned selective etching and opens a path to a number of applications in surface enhanced Raman spectroscopy and plasmonic devices. |
5A-3 Nanoimprint Lithography Applications |
Nano-imprint lithography has been demonstrated as a munufactureable process for creating flyable patterned media disks. |
5A-4 Nanoimprint Lithography Applications |
Fabrication of Nanoscale Memristor Arrays with One Nanoimprint Lithography Step, One NIL step was used for patterning all three layers (two electrodes and a switching layer) in making memristors. Arrays of memristors with an ON/OFF ratio better than 1000 were demonstrated. |
5A-5 Nanoimprint Lithography Applications |
We have successfully fabricated diffraction gratings of phase-shifted LDs by nanoimprint lithography (NIL). The LDs show satisfactory characteristics and long-term stability up to at least 5000 hours. We have measured photoluminescence intensity before and after NIL in order to demonstrate that the epitaxial layers suffer no damage by imprint. |
5B-1 Focused Ion Beam Nanofabrication |
Direct Patterning and Imaging of Graphene Structures with a Helium Ion Microscope, We report a new method of resist-free, sub-10 nm graphene patterning based on focused He+ ion beams. The technique employs the Helium Ion Microscope to surface sputter graphene sheets. We have patterned on both supported and suspended structures, demonstrating nano-ribbons of 7 nm width and individual holes of 5 nm. |
5B-2 Focused Ion Beam Nanofabrication |
Helium-ion Lithography with Hydrogen Silsesquioxane Resist, Helium ions may enable nanostructure fabrication with higher resolution than electrons. We have used a Zeiss Orion scanning helium ion microscope to demonstrate lithography of hydrogen silsesquioxane (HSQ) resist on silicon. Feature sizes of 10 nm were achieved. |
5B-3 Focused Ion Beam Nanofabrication |
Fabrication of CMOS Integrated Nanomechanical Devices By Ion Beam Patterning, We present a novel approach to fabricate nanomechanical devices monolithically integrated into CMOS circuit based on ion beam patterning. Silicon and polysilicon surfaces are locally exposed to a galium beam to either locally modify the surface by galium implantation or to induced TEOS deposition. The exposed areas sustain a reactive ion etching process. |
5B-4 Focused Ion Beam Nanofabrication |
Photonic structures were sputtered with 10 keV Ar+ multi-beams using the CHARPAN – Charged Particle Nanopatterning Tool. Using the IonShaper simulation software an excellent agreement between theory and experiment was obtained. A new recoils-based algorithm for the simulation of gas-assisted etching and deposition was developed and results are presented. |
5B-5 Focused Ion Beam Nanofabrication |
A novel method of nanofabrication was demonstrated to produce metal bismuth nanowires embedded into a matrix of bismuth oxide. The nanowires were formed in the process of reduction of the oxide exposed by the beam of protons. High aspect ratio e-beam resist mask was used. Obtained nanowires were electrically characterized. |
5C-1 Nanophotonics |
(Invited) Light Force Silicon Devices, We demonstrate the convergence of silicon nanomechanics and nanophotonics by building a new class of novel silicon optomechanical devices that operate on optical forces. Practical application enabled by this strong mechanics-photonics interaction, such as all-optical logic, reconfigurable photonics, mechanical nonlinear optics, ultrasensitive transducers, will be discussed. |
5C-2 Nanophotonics |
Advanced Silicon Processing for Active Integrated Photonic Devices, We present a set of processing technologies that enable hybrid silicon/III-V laser structures. The wafer bonded structure supports a joint optical mode whose profile overlaps both Si and III-V. The relative overlap is controlled by changing silicon waveguide dimensions. CW operation with single facet power of 12.5mW is demonstrated. |
5C-3 Nanophotonics |
Fabrication of Novel Digital Optical Spectrometer-on-chip, A novel type of Digital Optical Spectrometer-on-chip has been theoretically proposed and first results of their fabrication and characterization are reported. The optical performance of fabricated devices was measured. Spectrometers with 128 and 1000 channels were characterized; the optical performance was in good agreement with designed characteristics of these devices. |
5C-4 Nanophotonics |
Manipulating Nano-scale Light Fields With The Plasmonic Color Nanosorter, Here, we present our experimental and theoretical study of a device, termed the Plasmonic Color Nanosorter, which demonstrates both the ability to efficiently capture and strongly confine broadband optical fields, as well as to spectrally filter and steer them while maintaining nanoscale field distributions. |
5D-1 Directed Self Assembly and Novel Nanofabrication |
Nanoimprint lithography is combined with shadow evaporation to form sub-5nm circular features. The process is extended to grids of orthogonal lines. |
5D-2 Directed Self Assembly and Novel Nanofabrication |
Positioning of Nanocrystals on Prestructured Substrates, We show that nanocrystals (diameter 10-25 nm) can be positioned on pre- patterned substrates by mechanical polishing. The high resolution projection maskless nanopatterning method of IMS Inc (using 10 keV Ar+ multibeams) is applied to form pits in any desired pattern. Single pit occupation is demonstrated for the smallest pit diameter of <20 nm. |
5D-3 Directed Self Assembly and Novel Nanofabrication |
Single-Walled Carbon Nanotube Alignment by Grating-Guided Electrostatic Self-assembly, In this work, well-aligned single-walled carbon nanotube is achieved by a simple grating-templated electrostatic self-assembly technique. The easy processing and high process yield of this technique may present a practical route toward device and circuit applications of SWNTs. |
5D-4 Directed Self Assembly and Novel Nanofabrication |
We propose a novel fabrication process to pattern quasi-periodic micro/nanoscale structures using field-induced assembly of nanoparticles. In this scheme a fluid containing nanoparticles is used as a contact lithography mask, which the pattern can be actively tuned using externally applied magnetic field. |
5D-5 Directed Self Assembly and Novel Nanofabrication |
Ultrahigh Resolution X-Ray Fresnel Zone Plates Made By Thin Film Deposition, Thin film technology is used to bypass the current limitations on the manufacture of Fresnel zone plate lenses for x-ray microscopy and to boost the spatial resolution ever achieved up to date. |
6A-1 Patterned Media |
This work presents a methodology for automated pattern inspection and defect characterization for imprint-patterned media. We have developed software that analyzes optical metrology images and identifies defects distinctly from data storage structures or servo patterns. Complementary metrology techniques are used to confirm the physical structure of defects. |
6A-2 Patterned Media |
Advantages And Challenges In The Directed Block Copolymer Assembly Approach For Bit Patterned Media, We explored the feasibility of using the directed BCP approach for bit patterned media with areal density of 1 Tb/in2 and beyond. |
6A-3 Patterned Media |
Directing Block Copolymers Assembly within Patterned Media Specifications, Directed assembly combines the uniformity of block copolymer self assembly with the long range placement accuracy of e-beam lithography as an alternative route to achieving dense patterns within the tight size and placement tolerances required for magnetic bit patterned media applications. |
6A-4 Patterned Media |
Directed Block Copolymer Assembly to 4 Teradot/in2 Patterned Media: Chemical or Topographic Guiding?, By combining BCP in the strong segregation limit with either chemically or topographically patterned surfaces, addressable dot arrays with an areal density of 1.3-3.8 Tdot/in2 can be easily achieved with resolution enhancement of a factor of 4. This approach has immediate application in fabricating patterned media with areal densities of 4 Tdot/in2 or more. |
6B-1 High Resolution Electron Beam Lithography |
Double Patterning HSQ Processes Of Zone Plates For 10nm Diffraction Limited Performance, |
6B-2 High Resolution Electron Beam Lithography |
We present a process for performing hybrid lithography that is well suited to high density CMOS device fabrication. Details on the electron beam and photolithographic processing will be discussed as well as results from CMOS circuits fabricated with a 90 nm minimum contacted gate pitch. |
6B-3 High Resolution Electron Beam Lithography |
A method for improvement of aspect ratio of ultra high resolution structures in negative electron beam resist is provided. The key point of the proposed method is the formation of a protecting cap by electron beam induced deposition (EBID) on the top of the resist structure in a self-aligned approach. |
6B-4 High Resolution Electron Beam Lithography |
Understanding Of Hydrogen Silsesquioxane Resist For Sub-5-Nm Half-Pitch Electron-Beam Lithography, The resolution patternable in HSQ just got higher. Down to 4.5-nm half pitch, are we limited by the resist or the lithography tool? |
6B-5 High Resolution Electron Beam Lithography |
Understanding The Mechanism Of Base Development Of Hydrogen Silsesquioxane, |
6B-6 High Resolution Electron Beam Lithography |
Electron-beam lithography with proximity correction is employed to fabricate conductor-barrier-conductor (CBC) tunnel junctions, which are potential devices for near-infrared and visible light detection, out of doped polysilicon. Recursive oxidation and oxide etching processes are also applied so that atomic level junction area control is possible. Non-linearity in the I-V curve proves the success in the tunnel junction’s performance. |
6C-1 Photovotaics |
(Invited) Photolithographic Patterning for Organic Electronics, A critical step for the realization of organic electronics is the availability of patterning techniques compatible with these materials. We report on the photolithographic patterning of organics using photoresists processed with solvents that are orthogonal to organics. We demonstrate the additive and subtractive patterning of several organic semiconductors. |
6C-2 Photovotaics |
Imprinted P3HT polymeric pillars, pores, and gratings are used to make polymer-fullerene solar cells with vertically interdigitized and bicontinuous heterojunction morphology. Effects of nanostructure geometry and imprint-induced crystallinity on device performance are studied. |
6C-3 Photovotaics |
Effect of UV Irradiation on Sol-Gel ITO Nanopatterns Replicated by Room-Temperature Nanoimprint, The spin-coated ITO film can be delineated by RT-NIL, but the patterns disappeared after 600o annealing process. To overcome the above problem, we examined UV irradiation effect onto a spin-coated ITO film. As a result, we found that the ITO patterns imprinted by RT-NIL were kept at annealing of 600o for 1 hour by UV irradiation before annealing. |
6C-4 Photovotaics |
Solid-State Dye-Sensitized Solar Cell Based on Semiconducting Nanomaterials, A solid-state dye-sensitized solar cell based on semiconducting ZnO nanoparticles and SWNTs is presented for solar energy harvesting. |
6D-1 Microfluidic |
Ionic Current Rectification and Switching in Heterogeneous Oxide Nanofluidic Channels, Sub-20 nm nanofluidic channels consisting of heterogeneous oxide materials of different isoelectric points were fabricated by using a sacrificial layer approach. Due to the abrupt junction formed between the positively and negatively charged surfaces, the fabricated nanofluidic diodes exhibit high rectification of ion current with record-high rectification factors over 300. |
6D-2 Microfluidic |
Dramatic Nano-Fluidic Properties Of Carbon Nanotube Membranes, CNT membranes have recently been fabricated by impregnating aligned CNTs arrays with polymer and plasma processing to open CNT entrances. Pressure driven fluid flows are 4-5 ORDERS OF MAGNITUDE FASTER than conventional Newtonian flow. Entrances to CNTs can be chemically gated and efficient electro-osmotic processes are seen for device applications. |
6D-3 Microfluidic |
Detection of Biomarkers Using Bio-Functionalized Microfluidic Channels, We successfully demonstrate detection of anti-hCG antibody, at a concentration of 1ng/ml and a dynamic range of three orders of magnitude, in less than one hour, detection of CEA (Carcinoembryonic Antigen) in a complex mixture at a concentration of 100 pg/ml, and the detection of DNA hybridization using our sensor. |
6D-4 Microfluidic |
An electrowetting microfluidic platform designed for control and transport of aqueous ions and polar species has been fabricated on passive electrode as well as an active matrix thin film transistor arrays. Electrically addressable vertically aligned carbon nanofibers (VACNFs) were formed as nanoscale functional elements for the platform. |
6D-5 Microfluidic |
Preparation Of Diamond-Like Channels In SU-8 For Optical Control Of The Filling State, Microfluidic channels with a diamond-like cross section were prepared in thin SU-8 layers on glass. The material provides biocompatibility and good chemical resistance, the novel cross sectional shape offers an easy control of the filling state via optical inspection thanks to total reflection in case of an unfilled channel. |
7A-1 Masks and Zone Plates |
(Invited) Lithography With Nanometer Precision On Monster Substrates, Scanning-beam interference lithography was scaled to pattern substrates nearly a meter in size and well over 100 kg in mass, while achieving <30 nm phase error. Sub-100 nm pitches have also been achieved. Special tools for cleaning, resist coating, lithography, metrology, and pattern transfer on large substrates are discussed. |
7A-2 Masks and Zone Plates |
Fabrication Of Hard X-Ray Zone Plates With Very High Aspect-Ratio By X-Ray Lithography, With the 'buttress' structure integrated with X-ray lithography, we achieved an electroplated gold zone plate with a diameter of 160 micron, an outermost zone-width of 200 nm and a thickness of 2.8 micron. The theoretical efficiency is well above 20% for photon energies between 10k and 25k eV. |
7A-3 Masks and Zone Plates |
Stretching And Alignment Of Compliant Nanomembranes By Embedded Nanomagnets, We present a method to distort, stretch, and align polymer nanomembranes via forces between nanomagnets. An array of magnets embedded within the membrane is brought into proximity of a matching array patterned on a rigid substrate. The magnetic attraction stretches and bends the membranes for repeatable, accurate overlay. |
7A-4 Masks and Zone Plates |
Negative Tone Quantum Lithography at 200-nm Pitch Nanoimprinted Blanks, We propose and demonstrate a novel method for negative-tone quantum lithography with nanoimprinted 200-nm pitch Al/Cr bilayer tile array blanks. Besides improving the flexibility of using quantum lithography in negative-tone patterning applications, this electrochemical etching based method can also be used in “field-configurable” prepatterned blank substrates which is still being investigated. |
7A-5 Masks and Zone Plates |
X-Ray Transmission Gratings With Enhanced Second Orders And Deflected Odd Orders, A novel type of X-ray transmission grating is designed, fabricated and tested. The novel grating can be used with its second orders with a moderate efficiency and doubled dispersion. Its odd orders are deflected away from the original diffraction plane and can be excluded when the detector is narrow enough. |
7B-1 Nanobiology |
Novel Immunoisolative Microcontainer With Nanoslots Defined By Nano Imprint Lithography, We report a micro-container with nanoporous lid that permits the free transport of ions, nutrients and waste products, but immunoprotects the encapsulated cells by preventing the passage of large immune system molecules. A technique to achieve stricter pore size by creating a membrane with nanoslots using NIL was developed. |
7B-2 Nanobiology |
Locally-Gated, Suspended Silicon Nanowire FETs for Biomolecular Sensing, We fabricate individually-gated, suspended silicon nanowire FETs for biomolecular sensing. Top-gated nanowires are patterned by EBL, RIE and TMAH etching and widths as narrow as 20nm are achieved. Devices demonstrate favorable FET characteristics including near-bulk mobility, 75mv/decade subthreshold slope and Ion/Ioff >2E6. Preliminary sensing results will also be discussed. |
7B-3 Nanobiology |
(Invited) Why Mechanical Forces Matter in Health and Disease: proteins as mechano-chemical switches, New nanotechnology and computational tools begin to reveal novel mechanisms how the structure/function relation of proteins can be switched if proteins are mechanically stretched and partially unfolded. |
7B-4 Nanobiology |
High Q-Factor Small Size Polymer Micro-Ring Resonators For High-Frequency Ultrasound Detection, Polymer microring is a new platform for optical detection of ultrasound. Small ring sizes with smooth sidewalls are necessary to form 2D arrays with high-Q factors. The devices were fabricated by imprinting using a Si mold. A thermal oxidation process was used to smooth the sidewall of the Si mold. |
7B-5 Nanobiology |
Observing Protein-DNA Interactions Using Double-Tethered DNA Curtains, DNA molecules are bound at each end to nanofabricated patterns for the purpose of observing repair protein diffusion along the DNA. |
7B-6 Nanobiology |
Fabrication of Nanoneedle Array for High Throughput Biomarker Detection in a Lab-On-a-Chip Device, We introduced Nanoneedle, a label-free biosensor, which has the potential of measuring single molecule interactions useful for protein biomarker detection and DNA sequencing. We discuss the fabrication process for an array of needles. We also performed finite element modeling of impedance modulation in the nanoneedle during the capture of the target biomolecule. |
7C-1 Nanomechanics |
Techniques Of Cryogenic Reactive Ion Etching In Silicon For Fabrication Of Sensors, This work demonstrates the cryogenic etch in an Oxford Systems ICPRIE for fabrication of sensors in silicon. Specifically, we demonstrate etching 70-90 micron tall high AR solar cells, liftoff of 15 microns of metallization using 1.5 microns of photoresist, and etching of 250 microns using 5 microns thick oxide masks. |
7C-2 Nanomechanics |
Integrated Strain Sensing on Flexible Waveguides with Bragg Gratings Fabricated by Focus Ion Beam, We report design and fabrication of Bragg grating strain sensors in flexible waveguides for application to our waveguide microgripper device. This capability will enable the measurement of mechanical properties while simultaneously measuring optical properties and manipulating cells and other micro/nanostructures. Sensitivities in pN range are predicted for these Bragg sensors. |
7C-3 Nanomechanics |
Nanofabrication of Sharp Diamond Tips by E-beam Lithography and ICP-RIE, Diamond scanning microscopy probes excel through exceptional hardness, low adhesion force and low wear properties. We explore the fabrication feasibility of sharp diamond tips by direct etching, using ultra-nanocrystalline diamond with a SiO2 precursor cap as a starting material, and optimize the ICP-RIE recipe to obtain sub-50 nm tip radii. |
7C-4 Nanomechanics |
Electrothermal Actuation Of Silicon Carbide Ring Resonators, Silicon carbide flexural-mode ring resonators have been simulated, fabricated and tested for achieving higher resonant frequencies compared to beam structures. The resonators have been electrothermally actuated and resonant frequencies in the MHz range have been measured. Details of the fabrication process and characterization of the ring resonators are presented. |
7C-5 Nanomechanics |
We utilize Focised Ion Beam to manufacture 100-900nm diameter vertical nano-pillars with different initial microstructures to investigate mechanical properties at nano-scale. In-situ mechanical tests were conducted in one-of-a-kind instrument, SEMentor. All samples show significant size effects and unique evolved microstructure. Post-mortem microstructure is investigated by site-specific TEM analysis |
7C-6 Nanomechanics |
Our work is in the batch fabrication of ultra-sensitive silicon cantilever with integrated nanomagnets, for magnetic resonance force microscopy. Cantilevers with 50-600nm wide nickel magnets, with 4.2K force sensitivity of a few attoNewtons, have been successfully fabricated. |
7D-1 Beam Induced Processes |
Time Dependent Effects of Electron Beam Induced Etching (EBIE), Electron Beam Induced Etching (EBIE) offers direct write capability by dissociation of an etch precursor gas in an adsorbed state, forming a volatile etch product. The shape of the etch profile is highly dependent on the beam parameters such as current density, dwell time, and refresh time. |
7D-2 Beam Induced Processes |
Patterning Unity 4698P with Electron Beam Lithography to Create Submicron Air Cavities, Unity 4698P is a decomposable sacrificial polymer normally patterned using photolithography to create micrometer-size air-cavities. In this work, direct electron-beam exposure was used instead to create submicron patterns. Submicron air cavities can be useful in applications such as microfluidics, waveguides surrounded by air, and a low-k option for electrical interconnects. |
7D-3 Beam Induced Processes |
We present the generation of pure titanium oxide nanocrystals via EBID on Si(111) and Si(100) samples in UHV. Different post treatments are found to enhance the purity and to engineer the deposit morphology. We will present SEM-movies of the TiOx nanocrystal formation acquired in situ and local Auger spectra. |
7D-4 Beam Induced Processes |
Electron-Beam Induced Deposition using Liquid-Phase Precursors, We report direct electron-beam induced deposition of ~50-nm structures from a chloroplatinic acid solution. The solution is separated from the e-beam lithography vacuum environment by a polyimide membrane and deposition occurs at the membrane solution interface. Dots, lines, and arbitrary patterns were created using a 20keV electron beam. |
7D-5 Beam Induced Processes |
We report the lithographic fabrication of sub-10 nm clean iron EBID structures with an SEM in a UHV environment (precursor: Fe(CO)5, substrate: Si(001). It will be shown that UHV is not only mandatory to reduce carbonaceous deposits from residual gases, but also to guarantee a well defined surface condition. |
7D-6 Beam Induced Processes |
We report a process using hydrogen silsesquioxane (HSQ) to fabricate ultra-dense gold (Au) nanostructures. 50-nm-period Au gratings acted as an effective substrate for surface-enhanced Raman spectroscopy (SERS). In this paper, detailed processing steps and the paths to better SERS-active substrates will be presented and discussed. |
8A-1 Tip Based Processing |
Invited) The Tip-Based Nanofabrication Program, The primary goal of the Tip-Based Nanofabrication (TBN) program is to develop the capability to controllably manufacture nanostructures, specifically nanowires, nanotubes, and quantum dots, with nanometer-scale control over the size, orientation, and position of each individual nanostructure. |
8A-2 Tip Based Processing |
Nanometer-Scale Direct-Write 3D-Patterning using Probes, We found that organic-molecular-glasses can be removed with nanometer-scale precision using heated probes. With this new technology one can fabricate complex three-dimensionally textured substrates, e.g. for the directed assembly of shape-matching objects. The technique also offers a competitive alternative in terms of resolution and speed to high-resolution E-beam lithography. |
8A-3 Tip Based Processing |
Frontiers of Tip-Based Nanofabrication: From DPN and Beyond, We are now developing new tip-based nanofabrication technologies, specifically polymer pen lithography (PPL), redox-activating dip-pen nanolithography(RA-DPN), and scanning probe epitaxy (SPE) based on our initial efforts with DPN. This presentation will report progress and challenges in developing these new TBN methods. |
8A-4 Tip Based Processing |
Atomic Precision Lithography on Si, Scanning tunneling microscopes (STMs) may be used to remove H from Si (100) 2x1 surfaces with atomic precision. The paper will present progress towards an automated, atomically-precise H depassivation lithography. Details on the STM instrument, tip, controlling software, demonstrations of lithography, and applications will be described. |
8A-5 Tip Based Processing |
Nanoscale Deposition and Etching of Silicon Quantum Dots Using Field-Assisted AFM-Based CVD, Electric-field assisted decomposition of gas molecules near a conducting AFM tip is used to directly deposit (from SiCl4 with +50MV/cm), etch (using SF6 with -10MV/cm) and pattern (speed: 0.01 cm/s) nanometer-scale silicon structures on silicon at room temperature and one atmosphere. The byproducts are in gas phase making this technique clean. |
8B-1 Plasmonics |
Nanofabrication Of Deterministic Aperiodic Structures For Radiative Engineering In Nanoplasmonics, |
8B-2 Plasmonics |
(Invited) Designing Hierarchical and Quasi-3D Plasmonic Lattices, This talk will describe how a multiscale patterning approach—-soft interference lithography combined with PEEL-—can be used to create a wide range of hierarchically structured, plasmonic materials. |
8B-3 Plasmonics |
High-density sub-20nm plasmonic nanostructures were fabricated by nanoimprint lithography. The nanoimprint mold was made by using a self-assembled block copolymer template. The strong enhancement of light absorption by surface plasmon resonance was observed, and this effect is being exploited in devices such as photovoltaic cells. |
8B-4 Plasmonics |
We report on a method to enhance the light-emission efficiency of printable thin films of polymer doped with semiconducting nanocrystals and with dye chromophores via metallic nanoparticules and via nanoimprinted photonic crystals. The nanocomposite materials showed very good nanoimprint properties and impressive enhancements in the emission intensity of incorporated emitters. |
8B-5 Plasmonics |
Infrared Dipole Antenna Enhanced by Surface Phonon Polaritons, Due to the synergistic action of the dipole antenna and the resonant excitation of surface phonon polaritons, field enhancement in the gap region of gold dipole antennas can reach a value that is more than four orders of magnitude higher than that of free standing dipole antenna. |
8C-1 Molecular and Nanoelectronic |
In this paper, it is shown that in-plane gate transistors can be fabricated into poly(3 -hexylthiophene) (P3HT). We have developed a new approach to pattern organic semiconductors at the nanoscale. We demonstrate devices with excellent ambient air stability; a decrease in performance of only 40% is obsereved over a 15 day period. |
8C-2 Molecular and Nanoelectronic |
Reconfigurable Logic Circuits in a Memristor-Transistor Hybrid Chip, A memristor-transistor hybrid circuit is demonstrated. The memristors, vertically integrated with the CMOS layer, serve as the data routing network, connecting the transistors on the CMOS layer to form logic circuits. Functional logic gates are demonstrated in the hybrid circuits. |
8C-3 Molecular and Nanoelectronic |
When thin films of metal-organic compounds such as Zinc Neodecanoate are irradiated with a high energy e-beam they behave as high-resolution negative resists. Further, when heat treated at 500C in air the films reduce to the widebandgap semiconductor ZnO. By combining these two processes, nanoscale n-channel, depletion-mode FETs have been successfully fabricated directly from the metal-organic precursor. |
8C-4 Molecular and Nanoelectronic |
(MNC 2008 Best Paper) Wiring Single Metal-Phthalocyanine Molecules With Conjugeted Polymers, We report on the nanostructures of metal-phthalocyanine molecules on a molecular layer of diacetylene compound. We demonstrate that we can fabricate two polydiacetylene nanowires toward a single phthalocyanine molecule through nanoscale controlled chain polymerization. |
8C-5 Molecular and Nanoelectronic |
Transfer Printing Approach for Fabricating Molecular Electronic Junctions, We have adapted nanotransfer printing to fabricate ultrasmooth gold (uS-Au) films for use as top metal electrodes in molecular electronic devices. We have fabricated molecular junctions by first forming self-assembled monolayers of bifunctional molecules either on uS-Au or Si substrates. By application of moderate pressure, dense monolayers are covalently bonded to both electrodes producing robust and reproducible uS-Au/molecule/Si junctions. |
8D-1 Focused Ion Beam Tool Development |
Optimization of Focused Ion Beam Performance., The limitations to the probe current of two-lens focused ion beam systems are considered. For a Ga-LMIS-based system the current is brightness limited for sub-10 nm probe sizes, whereas for a He-GFIS-based system (Orion microscope) the current is limited by the angular current density, probe sizes larger than 0.3 nm. |
8D-2 Focused Ion Beam Tool Development |
Shot Noise In Light Ion And Neutral Particle Lithography, This paper reports an integrated study of shot noise in helium lithographies that compares variations in the printed images of the same mask feature with the predictions of a Monte-Carlo model. Both the amplitude and spatial frequency of line edge roughness are in good agreement for 75 and 25 nm features. |
8D-3 Focused Ion Beam Tool Development |
A Point Source Of Energetic Helium Atoms For Proximity Lithography, This paper describes the performance of a bright, compact point source of energetic neutral particles where a beam of helium ions is focused into a high pressure cell and neutralized by charge transfer scattering. The dependence of virtual source size, brightness, and field size on the design parameters will be discussed. |
8D-4 Focused Ion Beam Tool Development |
A FIB milling system is used to perform cubic-mm-scale material removal in order to access monolithic 3D IC components. With the use of a Xe ICP source, epoxy packaging and bulk silicon were removed at rates which outperform LMIS FIB milling by three and two orders of magnitude, respectively. |
8D-5 Focused Ion Beam Tool Development |
Implementation and Characterization of an Iodine Field Emission Ion Source for FIB Applications, We present results on the properties of a field emission ion source using the ionic liquids BMI-I and EMI-I. Emphasis is placed on these liquids due to the creation of I- ion beams. The characteristics are used to predict performance in a FIB column. |
09A-1 Maskless Lithography (Optical) |
Utilizing nanotechnology towards biological applications we created arrays of nanoscale features on large area of silicon for biological evaluation. Fabrication methods used in the study are: Laser Interference Lithography and Reactive Ion Etching . The aim is to obtain information about influence of regular nanotopography on living cell behavior. |
9A-2 Maskless Lithography (Optical) |
Laser Print Patterning of Planar Spiral Inductors, We fabricated square planar spiral inductors 12x12mm with inductances as high as 180nH on a quartz substrate using direct laser printed thin-film polymer as an aluminum etch mask. This technique is a low-cost, low temperature, maskless, resist-free, means of patterning metal layers with features as small as 200 microns. |
9A-3 Maskless Lithography (Optical) |
Large-Area Manhattan Patterns via Cutting of Gratings, We report the generation of large-area Manhattan structures with highly smooth side walls, via cutting gratings exposed by interference lithography and formed with orientation dependent etch of Si. The achieved pattern could be used as a mold/template for nanoimprint lithography. |
9A-4 Maskless Lithography (Optical) |
Low-Cost Interference Lithography, Interference lithography (IL) is well-suited to producing periodic patterns; existing IL systems require substantial investment and must be custom-built. We report demonstration of an IL system capable of ~ 300-nm-pitch patterning, but which is accessible to researchers and educators at a low cost (~ 400 USD) using readily available components. |
9A-5 Maskless Lithography (Optical) |
Nanoscale Laser Processing Using Near-Field Optics Combined With Electron Microscopy, Paper for the TBN special session. A nanomanufacturing methodology is presented coupling near-field scanning optical microscopy (NSOM) tips with laser radiation. In-situ nanoscale imaging is accomplished by combining the tips to scanning electron and transmission electron microscopes. The nanofabrication tools are utilized for nanomachining and directed growth of nanostructures via laser chemical vapor deposition. |
9B-1 Emerging Technologies |
Ruthenium oxide has demonstrated superior performance in terms of energy storage density (over a Watt-hour per kilogram) when compared to other material systems. But the cost of the oxide has been a major impediment to the widespread use of this technology. In this paper, we report on a the fabrication of ruthenium oxide based ultra-capacitor made with a coating system capable of providing continuous, densely packed layers of the nano-particles a single nano-particle thick. |
9B-2 Emerging Technologies |
(Invited) The Convergence Of Science And Engineering: Energy Conversion At Nano Scale, Our ability to effectively draw power from ultra thin membrane structures inspired us to explore interrupting the natural electron transport chain in thylakoid membranes, the key ingredient of every chloroplast organelle in light sensitive plant cells. Exposing thylakoid membrane stacks to nano-scale electrodes and stimulating them with light pulses resulted in measurable polarization currents. |
9B-3 Emerging Technologies |
Highly Robust Single-Wall Carbon Nanotube-Molecule Junction Device Fabrication Process, A self-aligned nanopatterning technique is used to create openings in carbon nanotubes into which a single organic molecule can be inserted, thus forming a nanotube-molecule junction device. |
9B-4 Emerging Technologies |
Characterization, Simulation, and Fabrication of a CNT Based Micro Mass Spectrometer, This work utilizes Carbon Nanotubes (CNT's) and Microelectomechanical Systems (MEMS) fabrication technology, in conjunction with extensive charged particle simulation techniques, to miniaturize the physical dimensions of a manufacturable mass spectrometer for use as an easily portable, on-site, real-time chemical analysis tool. |
9C-1 Nano-optic Structures and Devices |
Nanofabrication and Optical Characterization of Optical Transformer with 2-D Tapered Tip, Using electron-beam induced deposition and focused ion-beam milling, we have fabricated an advanced plasmonic optical transformer with a 2-dimensionally tapered tip. The fabricated transformer is composed of Au/SiO2/Au layers, and in our initial optical characterization (TPPL measurements), it showed a factor-of-14 improvement in electric field enhancement over gold surface. |
9C-2 Nano-optic Structures and Devices |
We report the fabrication of antenna-coupled metal-oxide-metal diodes (ACMOMDs) that detect long-wavelength infrared (LWIR) radiation for thermal imaging applications. The dipole antenna detects LWIR radiation and resultant antenna currents are rectified by the diode. ACMOMDs operate at room temperature without cooling or biasing, have a small footprint, and offer CMOS compatible fabrication. |
9C-3 Nano-optic Structures and Devices |
Fabrication Of Large Area Negative Index Structures By Nanoimprint Lithography, Negative index materials are artificially structured materials, where the designed structures provide resonances for the electric and magnetic field such that negative refraction occurs. Usually these materials are fabricated by electron beam lithography on small area. In this work we show large area fabrication of negative index structures by Nanoimprint Lithography (NIL). |
9C-4 Nano-optic Structures and Devices |
Large Area Negative Refractive Index Structures at Optical Frequencies Using Nanoimprint Lithography, Negative refraction index materials have been heavily pursued due to exciting applications such as the “super-lens”, waveguides, and many other optoelectronic devices. Utilizing nanoimprint lithography, we have fabricated periodic vertically oriented split-ring resonator structures to achieve negative index behavior at optical frequencies. |
9C-5 Nano-optic Structures and Devices |
Lithographic Scaling In Silicon Photonics: Is Smaller Better?, Silicon has emerged as a powerful platform for integrated optics. Convenient wavelengths for silicon photonics are in the near-infrared, so the feature sizes of devices have typically been in the hundreds of nanometers. There is, however, enormous promise in creating truly nanostructured waveguides for applications in ultrafast nonlinear optics. |
10A-1 Metrology |
3D Nanoparticle Trajectories by Orthogonal Tracking Microscopy, Using orthogonal tracking microscopy, we track 190 nm polystyrene beads in 3D and demonstrate localization precision < 20 nm at an imaging rate of 333 frames per second. |
10A-2 Metrology |
Imaging Interferometric Nanoscopy to the Limits of Available Frequency Space, Imaging interferometric microscopy resolution to lambda/2(nsub+1) (nsub = substrate refractive index) is demonstrated using evanescent-wave illumination. Resolution to 150 nm (lambda/4.2) is achieved using a 633 nm source and a 0.4 NA lens. Extension to 50 nm resolution with a 633 nm source (lambda/12.7) is proposed. |
10A-3 Metrology |
Dynamic Scatterometry For Profile Control During Resist Trimming Process, In this article, first we show that the dynamic scatterometry can be used for real time process monitoring during resist trimming process for different process parameters such as chemistries and power bias, then we discuss the influence of these different parameters on the measurement. |
10A-4 Metrology |
Subwavelength diffraction metrology is investigated as a method for monitoring the nanoimprint lithography process. The suitability of this method for inline integration is demonstrated by using collinear delivery of incident light and collection of diffraction patterns through microscope optics. Its resolution limit for linewidth changes is shown to be +/-5nm. |
10A-5 Metrology |
A Toroidal Spectrometer For Signal Detection In Scanning Ion/Electron Microscopes, This paper presents a toroidal spectrometer detection system for scanning ion/electron microscopes. It provides a way to combine energy spectral information with normal topographical imaging from scattered ions/electrons. This information can be used to map things like work function, material type and surface layer thickness on the nano-scale. |
10B-1 NIL Issues |
We report a new approach to fill nanoscale holes and vias that combines Planarization by Laser Assisted Direct Imprint (PLADI) and Air Cushion Press (ACP). This technology is a low cost and fast method that can be applied to semiconductors or metals for wafer scale nanotrenches and nanoholes filling. |
10B-2 NIL Issues |
We demonstrate that by utilizing organic and inorganic nanoimprintable resist materials, large-area high-aspect ratio photonic nanostructures can be completely filled out and planarized in a rapid step with very low residual layer, thereby removing the need for the usual critical step of etchback. Different aspect-ratio structures and device fabrication examples will be discussed. |
10B-3 NIL Issues |
Recovery Prevention Via Pressure Control in T-NIL, Recovery is a phenomenon observed when larger structures are imprinted in thin polymeric layers in a thermal process at low temperature. Adequate control of the imprint pressure can serve as a means to reduce or avoid this effect. |
10B-4 NIL Issues |
We introduce a novel nanofabrication technique, Dynamic Nano Inscribing (DNI) for directly creating true continuous nano grating patterns by using sharp edge of tilted Si mold on a variety of metal or polymer materials, with linewidth down to 70 nm, at extremely high speed (~100 mm/sec) at ambient environment. |
10B-5 NIL Issues |
An asymmetric trench precisely aligned to the gate is required for potential heterojunction tunneling FET, however, the stringent alignment requirement is beyond the capabilities of conventional lithography tools. We here propose and demonstrate a self-aligned method to fabricate sub-10 nm wide asymmetric trenches to only one side of the gate. |
10C-1 Electron Beam Lithography | |
10C-2 Electron Beam Lithography |
Limiting Factors in Sub-10-nm Scanning Electron Beam Lithography, Achieving the highest possible resolution using SEBL has become an increasingly urgent problem in recent years, as advances in nanotechnology have driven demand for feature sizes well into the sub-10-nm domain. In this work, we have investigated the various limiting factors of SEBL and used the results to understand the fundamental limits of the technology. |
10C-3 Electron Beam Lithography |
Alpha Parameter, Resolution, Line Width Roughness and its Focus Dependencies in E-Beam Lithography, We present the interaction of alpha (parameter of the PSF), resolution and line width roughness against the focus, compared for variable shaped and Gaussian e-beam writers at different acceleration voltages. For the distinction between tool and process influences, alpha in dependency on the focus was determined with a new measurement method. |
10C-4 Electron Beam Lithography |
Noise Reduction Process for Atomic Image Projection Electron-Beam Lithography (AIPEL), As we are using the crystalline lattice image observed by HRTEM to make patterns, the quality of image is a key factor. We introduce the noise reduction objective aperture (NR aperture) at the back-focal plane of objective lens to reduce the noise signal in the mask. |